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1. 发明授权

US09385333B2 Process for producing thin film field-effect transistor 有权
标题翻译：薄膜场效应晶体管的制造方法
公开(公告)号：US09385333B2
公开(公告)日：2016-07-05
申请号：US11991379
申请日：2006-08-24
申请人： Takahiko Maeda , Haruo Kawakami , Hisato Kato , Nobuyuki Sekine , Kyoko Kato
发明人： Takahiko Maeda , Haruo Kawakami , Hisato Kato , Nobuyuki Sekine , Kyoko Kato
IPC分类号： H01L51/05 , H01L51/10 , H01L51/00
CPC分类号： H01L51/0545 , H01L51/0052 , H01L51/0055 , H01L51/0074 , H01L51/0094 , H01L51/105
摘要： A process for producing a thin film field-effect transistor includes providing a gate electrode, a gate insulating film, and source and drain electrodes, treating entire surfaces of the source and drain electrodes with a mixture of sulfuric acid and hydrogen peroxide, and providing an organic electronic material layer containing an organic electronic material on the gate insulating film to be in electrical contact with the source and drain electrodes. A reaction product of the organic electronic material, sulfuric acid and hydrogen peroxide containing a sulfonated product of the organic electronic material is present only at an interface between the source electrode and the organic electronic material layer and an interface between the drain electrode and the organic electronic material layer to thereby increase the electroconductivity of the organic electronic material and reduce a charge injection barrier from the source electrode to the organic electronic material.
摘要翻译：制造薄膜场效应晶体管的工艺包括提供栅电极，栅极绝缘膜以及源极和漏极，用硫酸和过氧化氢的混合物处理源极和漏极的整个表面，并提供在栅极绝缘膜上含有有机电子材料的有机电子材料层与源极和漏极电接触。含有有机电子材料的磺化产物的有机电子材料，硫酸和过氧化氢的反应产物仅存在于源电极和有机电子材料层之间的界面处，并且在漏电极和有机电子之间的界面从而增加有机电子材料的导电性，并减少从源电极到有机电子材料的电荷注入阻挡层。

2. 发明授权

US08709617B2 Magnetic memory element, driving method for same, and nonvolatile storage device 有权
标题翻译：磁存储元件，驱动方法及非易失性存储装置
公开(公告)号：US08709617B2
公开(公告)日：2014-04-29
申请号：US13001343
申请日：2008-09-05
申请人： Yasushi Ogimoto , Haruo Kawakami
发明人： Yasushi Ogimoto , Haruo Kawakami
IPC分类号： H01F10/08 , H01L43/08 , H01L43/12
CPC分类号： H01F10/3295 , B82Y25/00 , G11C11/161 , G11C11/1659 , G11C11/1675 , G11C11/5607 , H01F10/133 , H01F10/3268 , H01F10/3286 , H01L27/224 , H01L43/08 , Y10T428/1107 , Y10T428/1143
摘要： In accordance with one aspect of the invention, a magnetic memory element records information in a spin valve structure having a free layer, a pinning layer, and a nonmagnetic layer sandwiched therebetween. The magnetic memory element further has, on the free layer, a separate nonmagnetic layer and a magnetic change layer having magnetic characteristics which change according to temperature. Multiple cutouts, including one cutout with a different shape, are provided in a peripheral portion of the spin valve structure. A method of driving the magnetic memory element is characterized in that information is recorded by applying unipolar electric pulses.
摘要翻译：根据本发明的一个方面，磁存储元件将信息记录在具有自由层，钉扎层和夹在其间的非磁性层的自旋阀结构中。磁存储元件在自由层上还具有单独的非磁性层和具有根据温度变化的磁特性的磁性变化层。在自旋阀结构的周边部分设置有多个切口，包括具有不同形状的一个切口。驱动磁存储元件的方法的特征在于通过施加单极电脉冲来记录信息。

3. 发明授权

US08279661B2 Magnetic memory element, driving method for the same, and nonvolatile storage device 有权
标题翻译：磁存储元件，其驱动方法和非易失性存储装置
公开(公告)号：US08279661B2
公开(公告)日：2012-10-02
申请号：US12734292
申请日：2008-08-28
申请人： Yasushi Ogimoto , Haruo Kawakami
发明人： Yasushi Ogimoto , Haruo Kawakami
IPC分类号： G11C11/00 , G11C11/14 , G11C11/15
CPC分类号： H01L43/08 , G11C7/04 , G11C11/1659 , G11C11/1675 , H01L27/224
摘要： A magnetic memory element (10) for use in a cross-point type memory is provided with a spin valve structure having a free layer (5), a nonmagnetic layer (4), and a pinned layer (3). The magnetic memory element is also provided with another nonmagnetic layer (6) on one surface of the free layer (5), and furthermore, a magnetic change layer (7) whose magnetic characteristics change depending on temperature so as to sandwich the nonmagnetic layer (6) with the free layer (5). In the magnetic change layer (7), the magnetization intensity increases depending on temperature.
摘要翻译：在交叉点型存储器中使用的磁存储元件（10）设置有具有自由层（5），非磁性层（4）和钉扎层（3）的自旋阀结构。磁存储元件还在自由层（5）的一个表面上设置有另一非磁性层（6），此外，磁性层（7）的磁特性根据温度而变化以夹住非磁性层（ 6）与自由层（5）。在磁性变化层（7）中，磁化强度随温度而增加。

4. 发明申请

US20110109345A1 LOGIC CIRCUIT 有权
标题翻译：逻辑电路
公开(公告)号：US20110109345A1
公开(公告)日：2011-05-12
申请号：US13004480
申请日：2011-01-11
申请人： Haruo KAWAKAMI
发明人： Haruo KAWAKAMI
IPC分类号： H03K19/003
CPC分类号： H03K19/02 , H03K3/313
摘要： A logic circuit includes two two-terminal switching devices and receives first and second pulses as inputs. Each of the two devices has two different stable resistivity values for each applied voltage that is greater than a first threshold voltage (Vth1) and is smaller than a second threshold voltage (Vth2) that is larger than Vth1. Each switching device, when a voltage less than or equal to Vth1 is applied, becomes in a first state having the higher resistivity of the two resistivity values, whereas when a voltage more than or equal to Vth2 is applied, becomes in a second state having the lower resistivity of the two resistivity values. The two devices are connected in series in a direction with uniform polarity to each other. The first and second states are selectively generated in the first and second devices by a combination of inputs of the first and second pulses.
摘要翻译：逻辑电路包括两个两端开关器件，并接收第一和第二脉冲作为输入。两个装置中的每一个对于大于第一阈值电压（Vth1）的每个施加的电压具有两个不同的稳定电阻率值，并且小于大于Vth1的第二阈值电压（Vth2）。当施加小于或等于Vth1的电压时，每个开关装置变为具有两个电阻率值的较高电阻率的第一状态，而当施加大于或等于Vth2的电压时，变为具有两个电阻率值的电阻率较低。两个装置在彼此具有均匀极性的方向上串联连接。第一和第二状态通过第一和第二脉冲的输入的组合在第一和第二装置中选择性地产生。

5. 发明授权

US07786470B2 Switching element 失效
标题翻译：开关元件
公开(公告)号：US07786470B2
公开(公告)日：2010-08-31
申请号：US10545854
申请日：2004-02-17
申请人： Haruo Kawakami , Hisato Kato , Masami Kuroda , Nobuyuki Sekine , Keisuke Yamashiro
发明人： Haruo Kawakami , Hisato Kato , Masami Kuroda , Nobuyuki Sekine , Keisuke Yamashiro
IPC分类号： H01L35/24
CPC分类号： G11C13/02 , C07D495/04 , H01L27/28 , H01L51/0051 , H01L51/0059 , H01L51/0067 , H01L51/0068 , H01L51/0583
摘要： The present invention provides a switching element that has a stable bistable characteristic and a high transition voltage and demonstrates excellent cyclic performance. The switching element has two stable resistance values with respect to the voltage applied between electrodes, wherein a first electrode layer, an organic bistable material layer, and a second electrode layer are successively formed as thin films on a substrate and the organic bistable material constituting the organic bistable material layer is a quinomethane-based compound or a monoquinomethane-based compound. A metal constituting the second electrode layer is diffused into the organic bistable material layer. It is preferred that the second electrode layer be formed by vapor deposition and the temperature of the substrate during the vapor deposition be 30-150° C.
摘要翻译：本发明提供了具有稳定的双稳态特性和高跃迁电压的开关元件，并表现出优异的循环性能。开关元件相对于施加在电极之间的电压具有两个稳定的电阻值，其中第一电极层，有机双稳态材料层和第二电极层在基板上依次形成为薄膜，构成有机双稳态材料的有机双稳态材料有机双稳态材料层是基于喹啉的化合物或基于单甲基的化合物。构成第二电极层的金属被扩散到有机双稳态材料层中。优选通过气相沉积形成第二电极层，并且在气相沉积期间基板的温度为30-150℃。

6. 发明申请

US20090289249A1 Oxide Semiconductor, Thin-Film Transistor and Method for Producing the Same 失效
标题翻译：氧化物半导体，薄膜晶体管及其制造方法
公开(公告)号：US20090289249A1
公开(公告)日：2009-11-26
申请号：US12086628
申请日：2007-05-25
申请人： Hisato Kato , Haruo Kawakami , Nobuyuki Sekine , Kyoko Kato
发明人： Hisato Kato , Haruo Kawakami , Nobuyuki Sekine , Kyoko Kato
IPC分类号： H01L29/22 , H01L21/36
CPC分类号： H01L29/78693 , C01G19/006 , C01P2006/40 , H01L29/66969
摘要： Disclosed is an oxide semiconductor having an amorphous structure, wherein higher mobility and reduced carrier concentration are achieved. Also disclosed are a thin film transistor, a method for producing the oxide semiconductor, and a method for producing the thin film transistor. Specifically disclosed is an oxide semiconductor which is characterized by being composed of an amorphous oxide represented by the following a general formula: Inx+1MZny+1SnzO(4+1.5x+y+2z) (wherein M is Ga or Al, 0≦x≦1, −0.2≦y≦1.2, z≧0.4 and 0.5≦(x+y)/z≦3). This oxide semiconductor is preferably subjected to a heat treatment in an oxidizing gas atmosphere after film formation. Also specifically disclosed is a thin film transistor which is characterized by comprising the oxide semiconductor.
摘要翻译：公开了具有非晶结构的氧化物半导体，其中实现了更高的迁移率和降低的载流子浓度。还公开了薄膜晶体管，氧化物半导体的制造方法以及薄膜晶体管的制造方法。具体公开的是氧化物半导体，其特征在于由以下通式表示的无定形氧化物：Inx + 1MZny + 1SnzO（4 + 1.5x + y + 2z）（其中M为Ga或Al，0 < x <= 1，-0.2 <= y <= 1.2，z> = 0.4和0.5 <=（x + y）/ z <= 3）。该氧化物半导体优选在成膜后在氧化气体气氛中进行热处理。还具体公开了一种薄膜晶体管，其特征在于包括氧化物半导体。

7. 发明申请

US20090039342A1 Thin film field-effect transistor and process for producing the same 有权
标题翻译：薄膜场效应晶体管及其制造方法
公开(公告)号：US20090039342A1
公开(公告)日：2009-02-12
申请号：US11991379
申请日：2006-08-24
申请人： Takahiko Maeda , Haruo Kawakami , Hisato Kato , Nobuyuki Sekine , Kyoko Kato
发明人： Takahiko Maeda , Haruo Kawakami , Hisato Kato , Nobuyuki Sekine , Kyoko Kato
IPC分类号： H01L51/05 , H01L51/40
CPC分类号： H01L51/0545 , H01L51/0052 , H01L51/0055 , H01L51/0074 , H01L51/0094 , H01L51/105
摘要： Such a thin film transistor and a process for producing the same are provided that is capable of preventing the FET characteristics from being deteriorated with a short channel length. Such a thin film field-effect transistor and a process for producing the same are provided that contains a substrate 10, a gate electrode 11, a gate insulating film 12 that is provided on the gate electrode, a source electrode 15 and a drain electrode 14 that are provided on the gate insulating film with a prescribed distance, and an organic electronic material layer 13 containing an organic electronic material that is provided on the gate insulating film and is in electrical contact with the source electrode and the drain electrode, with an acid, an acid derivative and/or a reaction product of an acid and the organic electronic material being present at least a part of an interface between the source electrode and the organic electronic material layer and an interface between the drain electrode and the organic electronic material layer.
摘要翻译：提供这样的薄膜晶体管及其制造方法，其能够防止FET特性由于短的沟道长度而劣化。提供这样的薄膜场效应晶体管及其制造方法，其包含基板10，栅极电极11，设置在栅电极上的栅极绝缘膜12，源极15和漏极14 设置在规定距离的栅极绝缘膜上的有机电子材料层13和含有设置在栅极绝缘膜上并与源电极和漏电极电接触的有机电子材料的有机电子材料层13与酸，酸和有机电子材料的酸衍生物和/或反应产物存在于源电极和有机电子材料层之间的界面的至少一部分以及漏电极和有机电子材料层之间的界面。

8. 发明申请

US20080258136A1 Logic Circuit 有权
标题翻译：逻辑电路
公开(公告)号：US20080258136A1
公开(公告)日：2008-10-23
申请号：US11661132
申请日：2007-02-26
申请人： Haruo Kawakami
发明人： Haruo Kawakami
IPC分类号： H01L51/10
CPC分类号： H03K19/02 , H03K3/313
摘要： The invention includes a two terminal switching device having two stable resistivity values for each applied voltage, which when a voltage of not more than a first threshold voltage (Vth1) is applied, becomes in a first state having a higher resistivity, whereas when a larger second threshold voltage (Vth2) or more is applied, becomes in a second state having a lower resistivity; a resistance connected in series to the switching device; a terminal for applying a bias voltage (Vt) to both ends of a series circuit of the switching device and the resistance; a first pulse inputting terminal; and a second pulse inputting terminal. The invention provides a simple realization of a flip-flop circuit for a sequential logic circuit.
摘要翻译：本发明包括对于每个施加的电压具有两个稳定的电阻率值的两端开关装置，当施加不超过第一阈值电压（Vth 1）的电压时，它变为具有较高电阻率的第一状态，而当a 施加较大的第二阈值电压（Vth 2）以上，变成具有较低电阻率的第二状态; 与开关装置串联连接的电阻; 用于向开关装置的串联电路的两端施加偏置电压（Vt）的端子和电阻; 第一脉冲输入端; 和第二脉冲输入端子。本发明提供了用于顺序逻辑电路的触发器电路的简单实现。

9. 发明申请

US20070252130A1 Transistor with Tunneling Dust Electrode 有权
标题翻译：晶体管与隧道尘埃电极
公开(公告)号：US20070252130A1
公开(公告)日：2007-11-01
申请号：US10592664
申请日：2005-09-01
申请人： Yang Yang , Haruo Kawakami
发明人： Yang Yang , Haruo Kawakami
IPC分类号： H01L29/08 , H01L35/24 , H01L51/40
CPC分类号： H01L51/0504 , H01L51/0055 , H01L51/0508 , H01L51/055
摘要： A transistor-like electronic device operates somewhat as a triode vacuum tube. Two electrodes (source and drain) sandwich an intermediate layer of organic semiconductor material in which fine metallic particles are dispersed. Due to the fineness and number of the particles, they are close enough to each other that electrons can tunnel from one to the nest, so that a voltage impressed at the edge of the intermediate layer causes current to flow through the dispersed particles, and causes the entire layer to reach the impressed voltage. By varying the impressed voltage, the voltage of the intermediate layer is caused to vary, which controls conduction between the source and drain. By making the particles small, the proportion of open area between the particles remains large so the electrons have room to move around the particles and through the organic material in intermediate layer, allowing high currents to flow through the device.
摘要翻译：晶体管状电子器件稍微作为三极管真空管工作。两个电极（源极和漏极）夹着分散有金属微粒的有机半导体材料的中间层。由于颗粒的细度和数量，它们彼此足够接近，电子可以从一个隧道到巢穴，使得在中间层的边缘处施加的电压导致电流流过分散的颗粒，并且导致整个层达到外加电压。通过改变外加电压，使中间层的电压发生变化，从而控制源极和漏极之间的导通。通过使颗粒较小，颗粒之间的开放面积比例保持较大，因此电子具有在颗粒周围移动的空间，并通过中间层中的有机材料移动，允许高电流流过该装置。

10. 发明申请

US20070172697A1 Switching element 失效
标题翻译：开关元件
公开(公告)号：US20070172697A1
公开(公告)日：2007-07-26
申请号：US10558259
申请日：2004-08-12
申请人： Haruo Kawakami , Keisuke Yamashiro , Hisato Kato
发明人： Haruo Kawakami , Keisuke Yamashiro , Hisato Kato
IPC分类号： B32B19/00
CPC分类号： H01L51/0065 , B82Y10/00 , G11C13/0009 , G11C13/0014 , G11C13/0069 , G11C2013/009 , G11C2213/15 , G11C2213/56 , H01L51/0051 , H01L51/0052 , H01L51/0067 , H01L51/0068 , H01L51/0591 , H01L51/0595
摘要： A switching element with bistable characteristics which has switching characteristics stabilized by raising transition probability. The switching element has an organic bistable material layer between at least two electrodes. The organic bistable material layer contains an organic bistable compound having two stable resistance values to an applied voltage, wherein the switching element has thin films of a first electrode layer, a metal microparticle-containing layer, the organic bistable material layer, and a second electrode layer, formed on a substrate in this order, and the metal microparticle-containing layer contains metal microparticles and the organic bistable compound.
摘要翻译：具有双稳态特性的开关元件具有通过提高转换概率而稳定的开关特性。开关元件在至少两个电极之间具有有机双稳态材料层。有机双稳态材料层含有对施加电压具有两个稳定的电阻值的有机双稳态化合物，其中开关元件具有第一电极层，金属微粒含有层，有机双稳态材料层和第二电极的薄膜层，在基板上依次形成，金属微粒含有层含有金属微粒和有机双稳态化合物。

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