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1. 发明授权

US08319725B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US08319725B2
公开(公告)日：2012-11-27
申请号：US12769298
申请日：2010-04-28
申请人： Satohiro Okamoto , Yasuyuki Arai , Ikuko Kawamata , Atsushi Miyaguchi , Yoshitaka Moriya
发明人： Satohiro Okamoto , Yasuyuki Arai , Ikuko Kawamata , Atsushi Miyaguchi , Yoshitaka Moriya
IPC分类号： G09G3/34
CPC分类号： H05K1/189 , G02F1/133305 , G02F1/13452 , G02F1/167 , G06F3/0412 , G06F2203/04102 , G09G3/2096 , G09G3/3208 , G09G3/36 , G09G3/3611 , G09G5/003 , G09G5/39 , G09G2300/0421 , G09G2300/0478 , H01L27/1218 , H01L27/1225 , H05K2201/10128
摘要： The display device includes: a flexible display panel including a display portion in which scanning lines and signal lines cross each other; a supporting portion for supporting an end portion of the flexible display panel; a signal line driver circuit for outputting a signal to the signal line, which is provided for the supporting portion; and a scanning line driver circuit for outputting a signal to the scanning line, which is provided for a flexible surface of the display panel in a direction which is perpendicular or substantially perpendicular to the supporting portion.
摘要翻译：显示装置包括：柔性显示面板，包括显示部分，扫描线和信号线彼此交叉; 用于支撑柔性显示面板的端部的支撑部分; 信号线驱动器电路，用于向信号线输出信号，该信号线被提供给支撑部分; 以及扫描线驱动器电路，用于向垂直于或基本上垂直于支撑部分的方向向显示面板的柔性表面设置的扫描线输出信号。

2. 发明授权

US08227802B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08227802B2
公开(公告)日：2012-07-24
申请号：US12847352
申请日：2010-07-30
申请人： Hiroko Abe , Yuji Iwaki , Mikio Yukawa , Shunpei Yamazaki , Yasuyuki Arai , Yasuko Watanabe , Yoshitaka Moriya
发明人： Hiroko Abe , Yuji Iwaki , Mikio Yukawa , Shunpei Yamazaki , Yasuyuki Arai , Yasuko Watanabe , Yoshitaka Moriya
IPC分类号： H01L35/24
CPC分类号： H01L51/0579 , B82Y10/00 , G11C13/0014 , G11C13/04 , H01L27/112 , H01L27/115 , H01L51/0051 , H01L51/0059
摘要： It is an object of the present invention to provide a semiconductor device in which data can be written except when manufacturing the semiconductor device and that counterfeits can be prevented. Moreover, it is another object of the invention to provide an inexpensive semiconductor device including a memory having a simple structure. The semiconductor device includes a field effect transistor formed over a single crystal semiconductor substrate, a first conductive layer formed over the field effect transistor, an organic compound layer formed over the first conductive layer, and a second conductive layer formed over the organic compound layer, and a memory element includes the first conductive layer, the organic compound, and the second conductive layer. According to the above structure, a semiconductor device which can conduct non-contact transmission/reception of data can be provided by possessing an antenna.
摘要翻译：本发明的目的是提供一种其中可以写入数据的半导体器件，除了制造半导体器件并且可以防止伪造的情况下。此外，本发明的另一个目的是提供一种廉价的半导体器件，其包括具有简单结构的存储器。半导体器件包括形成在单晶半导体衬底上的场效应晶体管，形成在场效应晶体管上的第一导电层，形成在第一导电层上的有机化合物层，以及形成在有机化合物层上的第二导电层，并且存储元件包括第一导电层，有机化合物和第二导电层。根据上述结构，可以通过拥有天线来提供可以进行数据的非接触式发送/接收的半导体器件。

3. 发明申请

US20110027980A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110027980A1
公开(公告)日：2011-02-03
申请号：US12904181
申请日：2010-10-14
申请人： Shunpei YAMAZAKI , Yukie SUZUKI , Yasuyuki ARAI , Yoshitaka MORIYA , Kazuko IKEDA , Yoshifumi TANADA , Shuhei TAKAHASHI
发明人： Shunpei YAMAZAKI , Yukie SUZUKI , Yasuyuki ARAI , Yoshitaka MORIYA , Kazuko IKEDA , Yoshifumi TANADA , Shuhei TAKAHASHI
IPC分类号： H01L21/768
CPC分类号： H01L29/42368 , H01L21/28273 , H01L21/28282 , H01L21/84 , H01L27/12 , H01L27/1203 , H01L27/1214 , H01L27/1248 , H01L27/1255 , H01L27/13 , H01L29/42384 , H01L29/66757 , H01L29/66825 , H01L29/66833 , H01L29/78609 , H01L29/78618 , H01L29/7881
摘要： The semiconductor device has a semiconductor layer, a gate electrode which covers an end portion of the semiconductor layer, and an insulating layer for insulating the semiconductor layer and the gate electrode. The film thickness of the insulating layer which insulates a region where an end portion of the semiconductor layer and the gate electrode overlap each other is thicker than the film thickness of the insulating layer which covers the central portion of the semiconductor layer.
摘要翻译：半导体器件具有半导体层，覆盖半导体层的端部的栅电极和用于使半导体层和栅电极绝缘的绝缘层。使半导体层的端部与栅电极重叠的区域绝缘的绝缘层的膜厚比覆盖半导体层的中心部的绝缘层的膜厚厚。

4. 发明申请

US20100237774A1 Lighting Device 有权
标题翻译：照明装置
公开(公告)号：US20100237774A1
公开(公告)日：2010-09-23
申请号：US12722791
申请日：2010-03-12
申请人： Shunpei Yamazaki , Yasuyuki Arai , Noriko Shibata , Yukie Suzuki , Yasuo Nakamura , Ikuko Kawamata , Yoshitaka Moriya
发明人： Shunpei Yamazaki , Yasuyuki Arai , Noriko Shibata , Yukie Suzuki , Yasuo Nakamura , Ikuko Kawamata , Yoshitaka Moriya
IPC分类号： H05B33/06
CPC分类号： H01L51/5012 , F21K9/20 , F21K9/23 , F21S8/03 , F21S8/04 , F21S41/155 , F21V21/002 , F21Y2105/00 , F21Y2115/20 , H01L33/02 , H01L33/62 , H01L51/5064 , H05B33/22 , H05B33/28
摘要： To reduce the thickness of a lighting device which uses an electroluminescent material and to simplify the structure of a lighting device which uses an electroluminescent material, in the lighting device of the present invention: a terminal electrically connecting a light-emitting element included in the lighting device to the outside is formed over the same surface of a substrate as the light-emitting element; and the terminal is formed at the center of the substrate while the light-emitting element is stacked. In addition, the lighting device has a structure in which the light-emitting element is not easily deteriorated.
摘要翻译：为了减轻使用电致发光材料的照明装置的厚度，并且简化了使用电致发光材料的照明装置的结构，在本发明的照明装置中：将包括在照明装置中的发光元件电连接的端子器件到外部形成在与发光元件相同的表面上; 并且端子形成在基板的中心，同时发光元件堆叠。另外，照明装置具有发光元件不易劣化的结构。

5. 发明申请

US20090039352A1 Display device and electronic device having the display device, and method for manufacturing thereof 有权
标题翻译：具有显示装置的显示装置和电子装置及其制造方法
公开(公告)号：US20090039352A1
公开(公告)日：2009-02-12
申请号：US12222259
申请日：2008-08-06
申请人： Satoshi Kobayashi , Atsushi Miyaguchi , Yoshitaka Moriya , Yoshiyuki Kurokawa , Daisuke Kawae
发明人： Satoshi Kobayashi , Atsushi Miyaguchi , Yoshitaka Moriya , Yoshiyuki Kurokawa , Daisuke Kawae
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L29/66765 , H01L29/04 , H01L29/41733 , H01L29/78696
摘要： To provide a display device including a thin film transistor in which high electric characteristics and reduction in off-current can be achieved. The display device having a thin film transistor includes a substrate, a gate electrode provided over the substrate, a gate insulating film provided over the gate electrode, a microcrystalline semiconductor film provided over the gate electrode with the gate insulating film interposed therebetween, a channel protection layer which is provided over and in contact with the microcrystalline semiconductor film, an amorphous semiconductor film provided over the gate insulating film and on a side surface of the microcrystalline semiconductor film and the channel protection layer, an impurity semiconductor layer provided over the amorphous semiconductor film, and a source electrode and a drain electrode provided over and in contact with the impurity semiconductor layer. The thickness of the amorphous semiconductor film is larger than that of the microcrystalline semiconductor film.
摘要翻译：提供一种显示装置，其具有可以实现高电特性和减少截止电流的薄膜晶体管。具有薄膜晶体管的显示装置包括基板，设置在基板上的栅极电极，设置在栅电极上的栅极绝缘膜，设置在栅极上的微晶半导体膜，栅极绝缘膜插入其间，沟道保护提供在微晶半导体膜上并与微晶半导体膜接触的层;非晶半导体膜，设置在栅极绝缘膜上方，并且在微晶半导体膜和沟道保护层的侧表面上，设置在非晶半导体膜上的杂质半导体层以及设置在杂质半导体层上方并与其接触的源电极和漏电极。非晶半导体膜的厚度大于微晶半导体膜的厚度。

6. 发明申请

US20080121874A1 Semiconductor Device 有权
标题翻译：半导体器件
公开(公告)号：US20080121874A1
公开(公告)日：2008-05-29
申请号：US11793810
申请日：2006-01-20
申请人： Yoshitaka Moriya , Yasuko Watanabe , Yasuyuki Arai
发明人： Yoshitaka Moriya , Yasuko Watanabe , Yasuyuki Arai
IPC分类号： H01L51/10
CPC分类号： H01L27/1255 , H01L21/56 , H01L21/6835 , H01L21/6836 , H01L21/84 , H01L23/5227 , H01L24/83 , H01L27/105 , H01L27/12 , H01L27/1203 , H01L27/1214 , H01L27/1266 , H01L27/13 , H01L2221/68318 , H01L2221/68327 , H01L2221/68363 , H01L2224/73204 , H01L2224/81903 , H01L2224/8385 , H01L2224/83851 , H01L2224/9211 , H01L2924/00011 , H01L2924/01012 , H01L2924/01055 , H01L2924/01068 , H01L2924/01079 , H01L2924/12036 , H01L2924/12044 , H01L2924/14 , H01L2924/19041 , H01L2224/29075 , H01L2924/00
摘要： The present invention is to provide a semiconductor device in which the step can be simplified, the manufacturing cost can be suppressed, and the decrease in yield can be suppressed. A semiconductor device of the present invention includes an antenna, a storage element, and a transistor, wherein a conductive layer serving as an antenna is provided in the same layer as a conductive layer of the transistor or the storage element. This characteristic makes it possible to omit an independent step of forming the conductive layer serving as an antenna and to conduct the step of forming the conductive layer serving as an antenna at the same time as the step of forming a conductive layer of another element. Therefore, the manufacturing step can be simplified, the manufacturing cost can be suppressed, and the decrease in yield can be suppressed.
摘要翻译：本发明提供一种可以简化步骤的半导体器件，可以抑制制造成本，并且可以抑制产量的降低。本发明的半导体器件包括天线，存储元件和晶体管，其中用作天线的导电层设置在与晶体管或存储元件的导电层相同的层中。该特性使得可以省略形成用作天线的导电层的独立步骤，并且与形成另一元件的导电层的步骤同时进行形成用作天线的导电层的步骤。因此，能够简化制造工序，能够抑制制造成本，能够抑制成品率的降低。

7. 发明申请

US20070040971A1 Liquid crystal display device and manufacturing method thereof 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US20070040971A1
公开(公告)日：2007-02-22
申请号：US10577058
申请日：2004-11-05
申请人： Shinji Maekawa , Shunpei Yamazaki , Hideaki Kuwabara , Yoshitaka Moriya
发明人： Shinji Maekawa , Shunpei Yamazaki , Hideaki Kuwabara , Yoshitaka Moriya
IPC分类号： G02F1/1333 , G02F1/136
CPC分类号： G02F1/1368 , H01L2224/16225 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48464 , H01L2224/73204 , H01L2224/73265 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： By using one photo mask in the manufacturing steps of a liquid crystal display device, steps such as resist coating, prebaking, exposure, development, and postbaking, as well as the formation of a covering film, etching, resist peeling, rinsing, drying and the like before and after the aforementioned steps are required, which make the process complicated. To solve the problem, a channel-etch type bottom gate TFT (inverted staggered TFT) is employed to pattern source and drain regions and a pixel electrode with the same mask. Moreover, according to the invention, among the patterns required to form a liquid crystal display device such as a conductive layer for a wiring layer or an electrode, a mask for forming a predetermined pattern and the like, at least one or more of them is formed by a method by which a pattern can selectively be formed, thereby manufacturing a liquid crystal display device.
摘要翻译：通过在液晶显示装置的制造步骤中使用一个光掩模，诸如抗蚀涂层，预烘烤，曝光，显影和后烘烤之类的步骤，以及形成覆盖膜，蚀刻，抗蚀剂剥离，漂洗，干燥和需要上述步骤之前和之后，这使得该过程变得复杂。为了解决这个问题，采用沟道蚀刻型底栅TFT（反交错TFT）来对源极和漏极区域以及具有相同掩模的像素电极进行图案化。此外，根据本发明，形成布线层或电极用导电层等液晶显示装置所需的图案，形成规定图案的掩模等，其中至少一个或多个是通过可以选择性地形成图案的方法形成，从而制造液晶显示装置。

8. 发明申请

US20060202206A1 Semiconductor device and method for manufacturing the same 有权
公开(公告)号：US20060202206A1
公开(公告)日：2006-09-14
申请号：US11354810
申请日：2006-02-16
申请人： Jun Koyama , Koji Dairiki , Susumu Okazaki , Yoshitaka Moriya , Shunpei Yamazaki
发明人： Jun Koyama , Koji Dairiki , Susumu Okazaki , Yoshitaka Moriya , Shunpei Yamazaki
IPC分类号： H01L29/10
CPC分类号： H01L27/1266 , H01L27/1214 , H01L27/1218 , H01L27/1255 , H01L27/283 , H01L29/78603 , H01L51/0097 , H01L2224/16225 , H01L2924/12044 , Y02E10/549 , Y02P70/521 , H01L2924/00
摘要： An object of the present invention is to provide a semiconductor device which has flexibility and resistance to a physical change such as bending and a method for manufacturing the semiconductor device. A semiconductor device of the present invention includes a plurality of transistors provided over a flexible substrate, each of which has a semiconductor film, a gate electrode provided over the semiconductor film with a gate insulating film therebetween, and an interlayer insulating film provided to cover the gate electrode, and a bending portion provided between the plurality of transistors, in which the bending portion is provided by filling an opening formed in the interlayer insulating film with a material having a lower elastic modulus, a material having a lower glass transition point, or a material having a higher plasticity than that of the interlayer insulating film.

9. 发明授权

US08835907B2 Memory device and semiconductor device 有权
标题翻译：存储器件和半导体器件
公开(公告)号：US08835907B2
公开(公告)日：2014-09-16
申请号：US11793810
申请日：2006-01-20
申请人： Yoshitaka Moriya , Yasuko Watanabe , Yasuyuki Arai
发明人： Yoshitaka Moriya , Yasuko Watanabe , Yasuyuki Arai
IPC分类号： H01L29/08 , H01L27/12 , H01L21/84 , H01L23/522 , H01L27/13 , H01L21/56 , H01L21/683 , H01L27/105 , H01L23/00
CPC分类号： H01L27/1255 , H01L21/56 , H01L21/6835 , H01L21/6836 , H01L21/84 , H01L23/5227 , H01L24/83 , H01L27/105 , H01L27/12 , H01L27/1203 , H01L27/1214 , H01L27/1266 , H01L27/13 , H01L2221/68318 , H01L2221/68327 , H01L2221/68363 , H01L2224/73204 , H01L2224/81903 , H01L2224/8385 , H01L2224/83851 , H01L2224/9211 , H01L2924/00011 , H01L2924/01012 , H01L2924/01055 , H01L2924/01068 , H01L2924/01079 , H01L2924/12036 , H01L2924/12044 , H01L2924/14 , H01L2924/19041 , H01L2224/29075 , H01L2924/00
摘要： The present invention is to provide a semiconductor device in which the step can be simplified, the manufacturing cost can be suppressed, and the decrease in yield can be suppressed. A semiconductor device of the present invention includes an antenna, a storage element, and a transistor, wherein a conductive layer serving as an antenna is provided in the same layer as a conductive layer of the transistor or the storage element. This characteristic makes it possible to omit an independent step of forming the conductive layer serving as an antenna and to conduct the step of forming the conductive layer serving as an antenna at the same time as the step of forming a conductive layer of another element. Therefore, the manufacturing step can be simplified, the manufacturing cost can be suppressed, and the decrease in yield can be suppressed.
摘要翻译：本发明提供一种可以简化步骤的半导体器件，可以抑制制造成本，并且可以抑制产量的降低。本发明的半导体器件包括天线，存储元件和晶体管，其中用作天线的导电层设置在与晶体管或存储元件的导电层相同的层中。该特性使得可以省略形成用作天线的导电层的独立步骤，并且与形成另一元件的导电层的步骤同时进行形成用作天线的导电层的步骤。因此，能够简化制造工序，能够抑制制造成本，能够抑制成品率的降低。

10. 发明授权

US08716834B2 Semiconductor device including antenna 有权
标题翻译：半导体器件包括天线
公开(公告)号：US08716834B2
公开(公告)日：2014-05-06
申请号：US11792372
申请日：2005-12-21
申请人： Kiyoshi Kato , Yoshitaka Moriya
发明人： Kiyoshi Kato , Yoshitaka Moriya
IPC分类号： H01L21/02
CPC分类号： G06K19/0701 , G06K19/07749 , H01L21/84 , H01L27/12
摘要： A semiconductor device that can prevent reduction in the amplitude of electromagnetic waves transmitted from a reader/writer, and can prevent heating of an element forming layer due to a change in a magnetic field. The semiconductor device of the invention has an element forming layer formed over a substrate, and an antenna connected to the element forming layer. The element forming layer has at least wires such as a power supply wire and a ground wire that are arranged in a non-circular shape. The element forming layer and the antenna may be provided so as to overlap each other at least partially. The antenna may be provided above or below the element forming layer.
摘要翻译：一种半导体器件，其能够防止从读取器/写入器发送的电磁波的振幅的降低，并且可以防止由于磁场的变化而导致的元件形成层的加热。本发明的半导体器件具有形成在衬底上的元件形成层和连接到元件形成层的天线。元件形成层至少具有布置成非圆形形状的电线，例如电源线和接地线。元件形成层和天线可以设置成至少部分地彼此重叠。天线可以设置在元件形成层的上方或下方。

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