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1. 发明申请

US20130234100A1 NONVOLATILE MEMORY CELLS HAVING PHASE CHANGEABLE PATTERNS THEREIN FOR DATA STORAGE 审中-公开
标题翻译：具有数据存储的相位可变图案的非易失性存储器单元
公开(公告)号：US20130234100A1
公开(公告)日：2013-09-12
申请号：US13860836
申请日：2013-04-11
申请人： Hyeong-Geun An , Dong-Ho Ahn , Young-Soo Lim , Yong-Ho Ha , Jun-Young Jang , Dong-Won Lim , Gyeo-Re Lee , Joon-Sang Park , Han-Bong Ko , Young-Lim Park
发明人： Hyeong-Geun An , Dong-Ho Ahn , Young-Soo Lim , Yong-Ho Ha , Jun-Young Jang , Dong-Won Lim , Gyeo-Re Lee , Joon-Sang Park , Han-Bong Ko , Young-Lim Park
IPC分类号： H01L45/00
CPC分类号： H01L45/1253 , H01L27/2409 , H01L27/2436 , H01L27/2472 , H01L45/06 , H01L45/1233 , H01L45/1273 , H01L45/141 , H01L45/16 , Y10S438/90
摘要： Phase change memory devices can have bottom patterns on a substrate. Line-shaped or L-shaped bottom electrodes can be formed in contact with respective bottom patterns on a substrate and to have top surfaces defined by dimensions in x and y axes directions on the substrate. The dimension along the x-axis of the top surface of the bottom electrodes has less width than a resolution limit of a photolithography process used to fabricate the phase change memory device. Phase change patterns can be formed in contact with the top surface of the bottom electrodes to have a greater width than each of the dimensions in the x and y axes directions of the top surface of the bottom electrodes and top electrodes can be formed on the phase change patterns, wherein the line shape or the L shape represents a sectional line shape or a sectional L shape of the bottom electrodes in the x-axis direction.
摘要翻译：相变存储器件可以在衬底上具有底部图案。线形或L形底部电极可以形成为与衬底上的相应底部图案接触并且具有由衬底上沿x和y轴方向的尺寸限定的顶表面。沿着底部电极的顶表面的x轴的尺寸比用于制造相变存储器件的光刻工艺的分辨率极限具有更小的宽度。相变图案可以形成为与底部电极的顶表面接触以具有比底部电极的顶表面的x和y轴方向上的每个尺寸更大的宽度，并且顶部电极可以形成在相位上其中线形或L形表示底部电极在x轴方向上的截面线形状或截面L形。

2. 发明授权

US08426840B2 Nonvolatile memory cells having phase changeable patterns therein for data storage 有权
标题翻译：其中具有用于数据存储的相变图案的非易失性存储单元
公开(公告)号：US08426840B2
公开(公告)日：2013-04-23
申请号：US12913099
申请日：2010-10-27
申请人： Hyeong-Geun An , Dong-Ho Ahn , Young-Soo Lim , Yong-Ho Ha , Jun-Young Jang , Dong-Won Lim , Gyeo-Re Lee , Joon-Sang Park , Han-Bong Ko , Young-Lim Park
发明人： Hyeong-Geun An , Dong-Ho Ahn , Young-Soo Lim , Yong-Ho Ha , Jun-Young Jang , Dong-Won Lim , Gyeo-Re Lee , Joon-Sang Park , Han-Bong Ko , Young-Lim Park
IPC分类号： H01L47/00
CPC分类号： H01L45/1253 , H01L27/2409 , H01L27/2436 , H01L27/2472 , H01L45/06 , H01L45/1233 , H01L45/1273 , H01L45/141 , H01L45/16 , Y10S438/90
摘要： A nonvolatile memory cell includes a substrate and a phase changeable pattern configured to retain a state of the memory cell, on the substrate. An electrically insulating layer is provided, which contains a first electrode therein in contact with the phase changeable pattern. The first electrode has at least one of an L-shape when viewed in cross section and an arcuate shape when viewed from a plan perspective. A lower portion of the first electrode may be ring-shaped when viewed from the plan perspective. The lower portion of the first electrode may also have a U-shaped cross-section. An upper portion of the first electrode may also have an arcuate shape that spans more than 180° of a circular arc.
摘要翻译：非易失性存储单元包括衬底和配置为将存储单元的状态保持在衬底上的相变图案。提供电绝缘层，其包含与相变图案接触的第一电极。第一电极在从横截面观察时具有L形中的至少一个，并且从平面图看为弧形。从平面图看，第一电极的下部可以是环状的。第一电极的下部也可以具有U形横截面。第一电极的上部也可以具有跨越180°以上圆弧的弓形形状。

3. 发明授权

US08133757B2 Method of manufacturing a phase changeable memory unit having an enhanced structure to reduce a reset current 有权
标题翻译：制造具有增强结构以减少复位电流的相变存储器单元的方法
公开(公告)号：US08133757B2
公开(公告)日：2012-03-13
申请号：US12592816
申请日：2009-12-03
申请人： Hyun-Suk Kwon , Young-Soo Lim , Sung-Un Kwon , Yong-Ho Ha , Jeong-Hee Park , Joon-Sang Park , Myung-Jin Kang , Doo-Hwan Park
发明人： Hyun-Suk Kwon , Young-Soo Lim , Sung-Un Kwon , Yong-Ho Ha , Jeong-Hee Park , Joon-Sang Park , Myung-Jin Kang , Doo-Hwan Park
IPC分类号： H01L29/02
CPC分类号： H01L27/2436 , H01L27/2409 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1625 , H01L45/1683
摘要： A phase changeable memory unit includes a lower electrode, an insulating interlayer structure having an opening, a phase changeable material layer and an upper electrode. The lower electrode is formed on a substrate. The insulating interlayer structure has an opening and is formed on the lower electrode and the substrate. The opening exposes the lower electrode and has a width gradually decreasing downward. The phase changeable material layer fills the opening and partially covers an upper face of the insulating interlayer structure. The upper electrode is formed on the phase changeable material layer.
摘要翻译：相变存储单元包括下电极，具有开口的绝缘层间结构，相变材料层和上电极。下电极形成在基板上。绝缘层间结构具有开口并且形成在下电极和基板上。开口露出下电极并且具有向下逐渐减小的宽度。相变材料层填充开口并部分地覆盖绝缘层间结构的上表面。上电极形成在相变材料层上。

4. 发明申请

US20110044098A1 Nonvolatile Memory Cells Having Phase Changeable Patterns Therein for Data Storage 有权
标题翻译：非易失性存储单元，具有数据存储的相变模式
公开(公告)号：US20110044098A1
公开(公告)日：2011-02-24
申请号：US12913099
申请日：2010-10-27
申请人： Hyeong-Geun An , Dong-Ho Ahn , Young-Soo Lim , Yong-Ho Ha , Jun-Young Jang , Dong-Won Lim , Gyeo-Re Lee , Joon-Sang Park , Han-Bong Ko , Young-Lim Park
发明人： Hyeong-Geun An , Dong-Ho Ahn , Young-Soo Lim , Yong-Ho Ha , Jun-Young Jang , Dong-Won Lim , Gyeo-Re Lee , Joon-Sang Park , Han-Bong Ko , Young-Lim Park
IPC分类号： G11C11/46
CPC分类号： H01L45/1253 , H01L27/2409 , H01L27/2436 , H01L27/2472 , H01L45/06 , H01L45/1233 , H01L45/1273 , H01L45/141 , H01L45/16 , Y10S438/90
摘要： A nonvolatile memory cell includes a substrate and a phase changeable pattern configured to retain a state of the memory cell, on the substrate. An electrically insulating layer is provided, which contains a first electrode therein in contact with the phase changeable pattern. The first electrode has at least one of an L-shape when viewed in cross section and an arcuate shape when viewed from a plan perspective. A lower portion of the first electrode may be ring-shaped when viewed from the plan perspective. The lower portion of the first electrode may also have a U-shaped cross-section. An upper portion of the first electrode may also have an arcuate shape that spans more than 180° of a circular arc.
摘要翻译：非易失性存储单元包括衬底和配置为将存储单元的状态保持在衬底上的相变图案。提供电绝缘层，其包含与相变图案接触的第一电极。第一电极在从横截面观察时具有L形中的至少一个，并且从平面图看为弧形。从平面图看，第一电极的下部可以是环状的。第一电极的下部也可以具有U形横截面。第一电极的上部也可以具有跨越180°以上圆弧的弓形形状。

5. 发明授权

US07824954B2 Methods of forming phase change memory devices having bottom electrodes 有权
标题翻译：形成具有底部电极的相变存储器件的方法
公开(公告)号：US07824954B2
公开(公告)日：2010-11-02
申请号：US12170038
申请日：2008-07-09
申请人： Hyeong-Geun An , Dong-Ho Ahn , Young-Soo Lim , Yong-Ho Ha , Jun-Young Jang , Dong-Won Lim , Gyeo-Re Lee , Joon-Sang Park , Han-Bong Ko , Young-Lim Park
发明人： Hyeong-Geun An , Dong-Ho Ahn , Young-Soo Lim , Yong-Ho Ha , Jun-Young Jang , Dong-Won Lim , Gyeo-Re Lee , Joon-Sang Park , Han-Bong Ko , Young-Lim Park
IPC分类号： H01L21/06
CPC分类号： H01L45/1253 , H01L27/2409 , H01L27/2436 , H01L27/2472 , H01L45/06 , H01L45/1233 , H01L45/1273 , H01L45/141 , H01L45/16 , Y10S438/90
摘要： Phase change memory devices can have bottom patterns on a substrate. Line-shaped or L-shaped bottom electrodes can be formed in contact with respective bottom patterns on a substrate and to have top surfaces defined by dimensions in x and y axes directions on the substrate. The dimension along the x-axis of the top surface of the bottom electrodes has less width than a resolution limit of a photolithography process used to fabricate the phase change memory device. Phase change patterns can be formed in contact with the top surface of the bottom electrodes to have a greater width than each of the dimensions in the x and y axes directions of the top surface of the bottom electrodes and top electrodes can be formed on the phase change patterns, wherein the line shape or the L shape represents a sectional line shape or a sectional L shape of the bottom electrodes in the x-axis direction.
摘要翻译：相变存储器件可以在衬底上具有底部图案。线形或L形底部电极可以形成为与衬底上的相应底部图案接触并且具有由衬底上沿x和y轴方向的尺寸限定的顶表面。沿着底部电极的顶表面的x轴的尺寸比用于制造相变存储器件的光刻工艺的分辨率极限具有更小的宽度。相变图案可以形成为与底部电极的顶表面接触以具有比底部电极的顶表面的x和y轴方向上的每个尺寸更大的宽度，并且顶部电极可以形成在相位上其中线形或L形表示底部电极在x轴方向上的截面线形状或截面L形。

6. 发明申请

US20100144135A1 Method of manufacturing a phase changeable memory unit 有权
标题翻译：制造相变存储器单元的方法
公开(公告)号：US20100144135A1
公开(公告)日：2010-06-10
申请号：US12592816
申请日：2009-12-03
申请人： Hyun-Suk Kwon , Young-Soo Lim , Sung-Un Kwon , Yong-Ho Ha , Jeong-Hee Park , Joon-Sang Park , Myung-Jin Kang , Doo-Hwan Park
发明人： Hyun-Suk Kwon , Young-Soo Lim , Sung-Un Kwon , Yong-Ho Ha , Jeong-Hee Park , Joon-Sang Park , Myung-Jin Kang , Doo-Hwan Park
IPC分类号： H01L21/443
CPC分类号： H01L27/2436 , H01L27/2409 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1625 , H01L45/1683
摘要： A phase changeable memory unit includes a lower electrode, an insulating interlayer structure having an opening, a phase changeable material layer and an upper electrode. The lower electrode is formed on a substrate. The insulating interlayer structure has an opening and is formed on the lower electrode and the substrate. The opening exposes the lower electrode and has a width gradually decreasing downward. The phase changeable material layer fills the opening and partially covers an upper face of the insulating interlayer structure. The upper electrode is formed on the phase changeable material layer.
摘要翻译：相变存储单元包括下电极，具有开口的绝缘层间结构，相变材料层和上电极。下电极形成在基板上。绝缘层间结构具有开口并且形成在下电极和基板上。开口露出下电极并且具有向下逐渐减小的宽度。相变材料层填充开口并部分地覆盖绝缘层间结构的上表面。上电极形成在相变材料层上。

7. 发明授权

US07582568B2 Method of forming a phase changeable structure 有权
标题翻译：形成相变结构的方法
公开(公告)号：US07582568B2
公开(公告)日：2009-09-01
申请号：US11625142
申请日：2007-01-19
申请人： Young-Soo Lim , Jun-Soo Bae
发明人： Young-Soo Lim , Jun-Soo Bae
IPC分类号： H01L21/302
CPC分类号： H01L45/1233 , H01L45/06 , H01L45/144 , H01L45/1675
摘要： The present invention relates to a method of forming a phase changeable structure wherein an upper electrode is formed on a phase changeable layer. A material including fluorine can be provided to the phase changeable layer and the upper electrode. The phase changeable layer can be etched to form a phase changeable pattern. Oxygen plasma or water vapor plasma can then be provided to the upper electrode and the phase changeable pattern.
摘要翻译：本发明涉及形成可变相结构的方法，其中上电极形成在相变层上。可以向相变层和上电极提供包含氟的材料。相变层可被蚀刻以形成相变图案。然后可以将氧等离子体或水蒸气等离子体提供给上电极和相变图案。

8. 发明申请

US20070210334A1 Phase change memory device and method of fabricating the same 审中-公开
标题翻译：相变存储器件及其制造方法
公开(公告)号：US20070210334A1
公开(公告)日：2007-09-13
申请号：US11698155
申请日：2007-01-26
申请人： Young-Soo Lim , Yong-Sun Ko , Hyuk-Jin Kwon , Jae-Seung Hwang
发明人： Young-Soo Lim , Yong-Sun Ko , Hyuk-Jin Kwon , Jae-Seung Hwang
IPC分类号： H01L31/00
CPC分类号： H01L45/143 , H01L27/2436 , H01L45/06 , H01L45/126 , H01L45/144 , H01L45/1675
摘要： Example embodiments relate to a semiconductor memory device and a method of fabricating the same. Other example embodiments relate to a phase change memory device and a method of fabricating the same. There are provided a phase change memory device and a method of fabricating the same for improving or maximizing a production yield. The method comprises: after first removing a first hard mask layer used to form a contact pad electrically connected to a semiconductor substrate, forming a lower electrode to be electrically connected to the contact pad through a first contact hole in a first interlayer insulating layer formed on the contact pad and to have a thickness equal or similar to a thickness of the first interlayer insulating layer; and forming a phase change layer and an upper electrode on the lower electrode. Because change of the resistance value of the lower electrode is reduced or prevented, which has been caused due to a non-uniform thickness of a conventional first hard mask layer, a production yield may be improved.
摘要翻译：示例性实施例涉及半导体存储器件及其制造方法。其他示例性实施例涉及相变存储器件及其制造方法。提供了一种相变存储器件及其制造方法，用于改善或最大化产量。该方法包括：在首先去除用于形成与半导体衬底电连接的接触焊盘的第一硬掩模层之后，通过形成在第一层间绝缘层上的第一层间绝缘层中的第一接触孔形成下电极以与接触焊盘电连接所述接触焊盘的厚度等于或类似于所述第一层间绝缘层的厚度; 并在下电极上形成相变层和上电极。由于由于常规的第一硬掩模层的厚度不均匀而导致的下部电极的电阻值的变化被降低或防止，所以可以提高生产率。

9. 发明申请

US20110020650A1 Core-Shell Type Nanoparticles and Method For Preparing The Same 有权
标题翻译：核壳型纳米粒子及其制备方法
公开(公告)号：US20110020650A1
公开(公告)日：2011-01-27
申请号：US12898388
申请日：2010-10-05
申请人： Sang Ho Kim , Woo Ram Lee , Young Soo Lim
发明人： Sang Ho Kim , Woo Ram Lee , Young Soo Lim
IPC分类号： B32B15/02
CPC分类号： B01J13/02 , B22F1/02 , B22F2998/00 , B22F2998/10 , B82Y30/00 , C01G23/053 , C01P2004/80 , Y10S977/778 , Y10S977/81 , Y10S977/811 , Y10T428/2991 , Y10T428/2993 , B22F1/0018 , B22F1/0022 , B22F1/0074
摘要： Disclosed herein are core-shell type nanoparticles comprising nanoparticle cores made of a metal or semiconductor, and shells made of crystalline metal oxide formed on the surfaces of the nanoparticle cores, as well as a preparation method thereof. According to the disclosed invention, the core-shell nanoparticles, consisting of metallic or semiconductor cores and crystalline metal oxide shells, can be prepared by epitaxially growing metal oxide on the surfaces of the metallic or semiconductor nanoparticle cores. By virtue of the crystalline metal oxide shells, the core nanoparticle made of metal or semiconductor can ensure excellent chemical and mechanical stability, and the core-shell nanoparticles can show new properties resulting from the interaction between the metal cores and the metal oxide crystal shells.
摘要翻译：本文公开了包含由金属或半导体制成的纳米颗粒芯以及形成在纳米颗粒芯表面上的结晶金属氧化物制成的壳的核 - 壳型纳米颗粒及其制备方法。根据所公开的发明，由金属或半导体芯和结晶金属氧化物壳组成的核 - 壳纳米颗粒可以通过在金属或半导体纳米颗粒芯的表面上外延生长金属氧化物来制备。由于结晶金属氧化物壳，由金属或半导体制成的芯纳米颗粒可以确保优异的化学和机械稳定性，并且核 - 壳纳米颗粒可以显示由金属芯和金属氧化物晶体壳之间的相互作用产生的新特性。

10. 发明申请

US20090283741A1 METHOD OF FORMING A PHASE CHANGEABLE STRUCTURE 审中-公开
标题翻译：形成相位可变结构的方法
公开(公告)号：US20090283741A1
公开(公告)日：2009-11-19
申请号：US12509048
申请日：2009-07-24
申请人： Young-Soo Lim , Jun-Soo Bae
发明人： Young-Soo Lim , Jun-Soo Bae
IPC分类号： H01L47/00
CPC分类号： H01L45/1233 , H01L45/06 , H01L45/144 , H01L45/1675
摘要： The present invention relates to a method of forming a phase changeable structure wherein an upper electrode is formed on a phase changeable layer. A material including fluorine can be provided to the phase changeable layer and the upper electrode. The phase changeable layer can be etched to form a phase changeable pattern. Oxygen plasma or water vapor plasma can then be provided to the upper electrode and the phase changeable pattern.
摘要翻译：本发明涉及形成可变相结构的方法，其中上电极形成在相变层上。可以向相变层和上电极提供包含氟的材料。相变层可被蚀刻以形成相变图案。然后可以将氧等离子体或水蒸气等离子体提供给上电极和相变图案。

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