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    • 3. 发明授权
    • Image sensing device and fabrication thereof
    • 图像感测装置及其制造
    • US08368160B2
    • 2013-02-05
    • US12898419
    • 2010-10-05
    • Chung-Wei ChangFang-Ming HuangChi-Shao LinYu-Ping Hu
    • Chung-Wei ChangFang-Ming HuangChi-Shao LinYu-Ping Hu
    • H01L31/042
    • H01L31/18H01L27/14621H01L27/1463H01L27/14645H01L27/14689
    • An image sensing device is disclosed, including an epitaxy layer having the a conductivity type, including a first pixel area corresponding to a first incident light, a second pixel area corresponding to a second incident light, and a third pixel area corresponding to a third incident light, wherein the wavelength of the first incident light is longer than that of the second incident light and the wavelength of the second incident light is longer than that of the third incident light. A photodiode is disposed in an upper portion of the epitaxy layer, and a first deep well for reducing pixel-to-pixel talk of the image sensing device is disposed in a lower portion of the epitaxy layer in the second pixel area and the third pixel area, wherein at least a portion of the epitaxy layer in first pixel area does not include the first deep well.
    • 公开了一种图像感测装置,包括具有导电类型的外延层,包括对应于第一入射光的第一像素区域,对应于第二入射光的第二像素区域和对应于第三入射光的第三像素区域 光,其中第一入射光的波长比第二入射光的波长长,第二入射光的波长比第三入射光的波长长。 光电二极管设置在外延层的上部,并且用于减少图像感测装置的像素到像素的通话的第一深阱设置在第二像素区域中的外延层的下部和第三像素 区域,其中第一像素区域中的外延层的至少一部分不包括第一深孔。
    • 4. 发明申请
    • Image Sensing Device and Fabrication Thereof
    • 影像感应装置及其制作
    • US20120080766A1
    • 2012-04-05
    • US12898419
    • 2010-10-05
    • Chung-Wei ChangFang-Ming HuangChi-Shao LinYu-Ping Hu
    • Chung-Wei ChangFang-Ming HuangChi-Shao LinYu-Ping Hu
    • H01L27/146H01L31/18
    • H01L31/18H01L27/14621H01L27/1463H01L27/14645H01L27/14689
    • An image sensing device is disclosed, including an epitaxy layer having the a conductivity type, including a first pixel area corresponding to a first incident light, a second pixel area corresponding to a second incident light, and a third pixel area corresponding to a third incident light, wherein the wavelength of the first incident light is longer than that of the second incident light and the wavelength of the second incident light is longer than that of the third incident light. A photodiode is disposed in an upper portion of the epitaxy layer, and a first deep well for reducing pixel-to-pixel talk of the image sensing device is disposed in a lower portion of the epitaxy layer in the second pixel area and the third pixel area, wherein at least a portion of the epitaxy layer in first pixel area does not include the first deep well.
    • 公开了一种图像感测装置,包括具有导电类型的外延层,包括对应于第一入射光的第一像素区域,对应于第二入射光的第二像素区域和对应于第三入射光的第三像素区域 光,其中第一入射光的波长比第二入射光的波长长,第二入射光的波长比第三入射光的波长长。 光电二极管设置在外延层的上部,并且用于减少图像感测装置的像素到像素的通话的第一深阱设置在第二像素区域中的外延层的下部和第三像素 区域,其中第一像素区域中的外延层的至少一部分不包括第一深孔。