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1. 发明授权

US08431975B2 Back-side illumination image sensor 失效
标题翻译：背面照明图像传感器
公开(公告)号：US08431975B2
公开(公告)日：2013-04-30
申请号：US13018365
申请日：2011-01-31
申请人： Chih-Wei Hsiung , Fang-Ming Huang , Chung-Wei Chang
发明人： Chih-Wei Hsiung , Fang-Ming Huang , Chung-Wei Chang
IPC分类号： H01L31/101 , H01L31/113
CPC分类号： H01L27/14616 , H01L27/1461 , H01L27/14614 , H01L27/1464
摘要： A back side illumination (BSI) image sensor includes at least one pixel. The pixel area includes a photo diode and a transfer transistor. The transfer transistor has a control electrode made of a gate poly and a gate oxide for receiving a control instruction, a first electrode coupled to the photo diode, and a second electrode, wherein an induced conduction channel of the transfer transistor partially surrounds a recessed space which is filled with the gate poly and the gate oxide of the transfer transistor.
摘要翻译：背面照明（BSI）图像传感器包括至少一个像素。像素区域包括光电二极管和转移晶体管。转移晶体管具有由用于接收控制指令的栅极多晶硅和栅极氧化物制成的控制电极，耦合到光电二极管的第一电极和第二电极，其中转移晶体管的感应导通通道部分地包围凹陷空间其被转移晶体管的栅极多晶硅和栅极氧化物填充。

2. 发明授权

US08368130B2 Method and device to reduce dark current in image sensors 有权
标题翻译：降低图像传感器暗电流的方法和装置
公开(公告)号：US08368130B2
公开(公告)日：2013-02-05
申请号：US12968047
申请日：2010-12-14
申请人： Chun-Yao Ko , Chung-Wei Chang , Han-Chi Liu , Shou-Gwo Wuu
发明人： Chun-Yao Ko , Chung-Wei Chang , Han-Chi Liu , Shou-Gwo Wuu
IPC分类号： H01L27/146 , H01L31/0232 , H01L31/0352
CPC分类号： H01L27/14689 , H01L27/14609
摘要： A method to fabricate an image sensor includes providing a semiconductor substrate having a pixel area and a logic area, forming a light sensing element in the pixel area, and forming a first transistor in the pixel area and a second transistor in the logic area. The step of forming the first transistor in the pixel area and the second transistor in the logic area includes performing a first implant process in the pixel area and the logic area, performing a second implant process in the pixel area and the logic area, and performing a third implant process only in the logic area.
摘要翻译：制造图像传感器的方法包括提供具有像素区域和逻辑区域的半导体衬底，在像素区域中形成光感测元件，以及在像素区域中形成第一晶体管和在逻辑区域中形成第二晶体管。在逻辑区域中的像素区域和第二晶体管中形成第一晶体管的步骤包括在像素区域和逻辑区域中执行第一注入处理，在像素区域和逻辑区域中执行第二注入处理，以及执行仅在逻辑区域中进行第三次植入过程。

3. 发明授权

US08164733B2 Liquid crystal display panel 有权
标题翻译：液晶显示面板
公开(公告)号：US08164733B2
公开(公告)日：2012-04-24
申请号：US12255640
申请日：2008-10-21
申请人： Chung-Wei Chang
发明人： Chung-Wei Chang
IPC分类号： G02F1/1333
CPC分类号： G02F1/136259 , G02F1/13458 , G02F2001/136263
摘要： A liquid crystal display panel includes a first substrate, and a second substrate opposite to and facing the first substrate. The first substrate, having a repairing region and a display region defined thereon, includes at least one repairing wire arranged in the repairing region, and a passivation layer disposed over the repairing wire. The second substrate includes a common electrode, and at least one repairing protection pad formed thereon. The repairing protection pad, disposed on the surface of the common electrode and in the repairing region, faces the first substrate, and corresponds to the repairing wire.
摘要翻译：液晶显示面板包括第一基板和与第一基板相对并面向第二基板的第二基板。具有修复区域和限定在其上的显示区域的第一基板包括布置在修复区域中的至少一个修复线以及设置在修复线上的钝化层。第二基板包括公共电极和形成在其上的至少一个修复保护焊盘。设置在公共电极的表面和修复区域中的修理保护垫面对第一基板，并且对应于修理线。

4. 发明申请

US20120080766A1 Image Sensing Device and Fabrication Thereof 有权
标题翻译：影像感应装置及其制作
公开(公告)号：US20120080766A1
公开(公告)日：2012-04-05
申请号：US12898419
申请日：2010-10-05
申请人： Chung-Wei Chang , Fang-Ming Huang , Chi-Shao Lin , Yu-Ping Hu
发明人： Chung-Wei Chang , Fang-Ming Huang , Chi-Shao Lin , Yu-Ping Hu
IPC分类号： H01L27/146 , H01L31/18
CPC分类号： H01L31/18 , H01L27/14621 , H01L27/1463 , H01L27/14645 , H01L27/14689
摘要： An image sensing device is disclosed, including an epitaxy layer having the a conductivity type, including a first pixel area corresponding to a first incident light, a second pixel area corresponding to a second incident light, and a third pixel area corresponding to a third incident light, wherein the wavelength of the first incident light is longer than that of the second incident light and the wavelength of the second incident light is longer than that of the third incident light. A photodiode is disposed in an upper portion of the epitaxy layer, and a first deep well for reducing pixel-to-pixel talk of the image sensing device is disposed in a lower portion of the epitaxy layer in the second pixel area and the third pixel area, wherein at least a portion of the epitaxy layer in first pixel area does not include the first deep well.
摘要翻译：公开了一种图像感测装置，包括具有导电类型的外延层，包括对应于第一入射光的第一像素区域，对应于第二入射光的第二像素区域和对应于第三入射光的第三像素区域光，其中第一入射光的波长比第二入射光的波长长，第二入射光的波长比第三入射光的波长长。光电二极管设置在外延层的上部，并且用于减少图像感测装置的像素到像素的通话的第一深阱设置在第二像素区域中的外延层的下部和第三像素区域，其中第一像素区域中的外延层的至少一部分不包括第一深孔。

5. 发明申请

US20120032241A1 IMAGE SENSOR 有权
标题翻译：图像传感器
公开(公告)号：US20120032241A1
公开(公告)日：2012-02-09
申请号：US12849027
申请日：2010-08-03
申请人： Fang-Ming Huang , Chung-Wei Chang , Ping-Hung Yin
发明人： Fang-Ming Huang , Chung-Wei Chang , Ping-Hung Yin
IPC分类号： H01L31/10 , H01L31/02
CPC分类号： H01L27/14687 , H01L27/14609 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/1464
摘要： An image sensor includes: a substrate, at least a pixel, and at least a light shield is provided. Wherein the pixel includes a photodiode and at least a transistor, and the transistor is connected to a metal line via a contact. The light shield is positioned around at least one side of the pixel, wherein the light shield is made while forming the contact.
摘要翻译：图像传感器包括：提供至少一个像素的衬底和至少一个遮光罩。其中像素包括光电二极管和至少一个晶体管，并且晶体管经由触点连接到金属线。遮光板围绕像素的至少一侧定位，其中在形成接触的同时形成遮光罩。

6. 发明申请

US20110284984A1 IMAGE SENSOR AND FABRICATING METHOD THEREOF 有权
标题翻译：图像传感器及其制作方法
公开(公告)号：US20110284984A1
公开(公告)日：2011-11-24
申请号：US12781825
申请日：2010-05-18
申请人： Chih-Min Liu , Fang-Ming Huang , Ping-Hung Yin , Kuo-Chan Huang , Chung-Wei Chang
发明人： Chih-Min Liu , Fang-Ming Huang , Ping-Hung Yin , Kuo-Chan Huang , Chung-Wei Chang
IPC分类号： H01L31/0224 , H01L31/18
CPC分类号： H01L27/14636 , H01L27/1464 , H01L27/1469 , H01L2224/48091 , H01L2924/00014
摘要： The present invention provides an image sensor and a fabricating method thereof capable of approaching higher quantum efficiency and reducing cost. The method comprises: providing a substrate; forming a pixel region on a top surface of the substrate; forming an interlayer insulating layer and at least a metal line on the pixel region; forming an isolation carrier layer having a hole array therein on the interlayer insulating layer; grinding a lower surface of the substrate to reduce the thickness of the substrate; placing a plurality of conductors into the hole array to form a plurality of bumps on the isolation carrier layer.
摘要翻译：本发明提供能够接近更高量子效率并降低成本的图像传感器及其制造方法。该方法包括：提供衬底; 在所述基板的顶表面上形成像素区域; 在所述像素区域上形成层间绝缘层和至少金属线; 在层间绝缘层上形成具有孔阵列的隔离载体层; 研磨衬底的下表面以减小衬底的厚度; 将多个导体放置到孔阵列中以在隔离载体层上形成多个凸起。

7. 发明申请

US20110133260A1 METHOD AND DEVICE TO REDUCE DARK CURRENT IN IMAGE SENSORS 有权
标题翻译：减少图像传感器中的暗电流的方法和装置
公开(公告)号：US20110133260A1
公开(公告)日：2011-06-09
申请号：US12968047
申请日：2010-12-14
申请人： Chun-Yao Ko , Chung-Wei Chang , Han-Chi Liu , Shou-Gwo Wuu
发明人： Chun-Yao Ko , Chung-Wei Chang , Han-Chi Liu , Shou-Gwo Wuu
IPC分类号： H01L31/113
CPC分类号： H01L27/14689 , H01L27/14609
摘要： A method to fabricate an image sensor includes providing a semiconductor substrate having a pixel area and a logic area, forming a light sensing element in the pixel area, and forming a first transistor in the pixel area and a second transistor in the logic area. The step of forming the first transistor in the pixel area and the second transistor in the logic area includes performing a first implant process in the pixel area and the logic area, performing a second implant process in the pixel area and the logic area, and performing a third implant process only in the logic area.
摘要翻译：制造图像传感器的方法包括提供具有像素区域和逻辑区域的半导体衬底，在像素区域中形成光感测元件，以及在像素区域中形成第一晶体管和在逻辑区域中形成第二晶体管。在逻辑区域中的像素区域和第二晶体管中形成第一晶体管的步骤包括在像素区域和逻辑区域中执行第一注入处理，在像素区域和逻辑区域中执行第二注入处理，以及执行仅在逻辑区域中进行第三次植入过程。

8. 发明授权

US06661050B2 Memory cell structure with trench capacitor and method for fabrication thereof 有权
标题翻译：具有沟槽电容器的存储单元结构及其制造方法
公开(公告)号：US06661050B2
公开(公告)日：2003-12-09
申请号：US10102280
申请日：2002-03-20
申请人： Kuo-Chyuan Tzeng , Chen-Jong Wang , Chung-Wei Chang
发明人： Kuo-Chyuan Tzeng , Chen-Jong Wang , Chung-Wei Chang
IPC分类号： H01L27108
CPC分类号： H01L27/10861 , H01L27/10829 , H01L27/11 , H01L29/66181 , Y10S257/906
摘要： Within both a memory cell structure and a method for fabricating the memory cell structure there is employed a storage capacitor formed within a trench adjoining an active region of a semiconductor substrate. Within the memory cell structure and the method for fabrication thereof, both the active region of the semiconductor substrate and the trench are contained within a doped well within the semiconductor substrate.
摘要翻译：在存储单元结构和用于制造存储单元结构的方法中，采用在与半导体衬底的有源区相邻的沟槽内形成的存储电容器。在存储单元结构及其制造方法中，半导体衬底的有源区和沟槽都包含在半导体衬底内的掺杂阱中。

9. 发明授权

US06383863B1 Approach to integrate salicide gate for embedded DRAM devices 有权
标题翻译：为嵌入式DRAM设备集成自杀门的方法
公开(公告)号：US06383863B1
公开(公告)日：2002-05-07
申请号：US09963595
申请日：2001-09-27
申请人： Min-Hsiung Chiang , Hsiao-Hui Tseng , Hsien-Yuan Chang , Chung-Wei Chang , Kuo-Chyuan Tzeng
发明人： Min-Hsiung Chiang , Hsiao-Hui Tseng , Hsien-Yuan Chang , Chung-Wei Chang , Kuo-Chyuan Tzeng
IPC分类号： H01L218242
CPC分类号： H01L27/10852 , H01L21/76889 , H01L21/76897 , H01L27/10873 , H01L27/10888 , H01L28/84 , H01L28/90 , H01L29/66545
摘要： A process for integrating the formation of a salicide layer on DRAM word line structures, and on a bit line contact structure, has been developed. The process features selective etch back of the insulator layers embedding the tapered shaped bit line contact, and the tapered shape capacitor structures, exposing top surface portions of polysilicon word line structures. The selective etch back procedure also results in formation of insulator spacers on the sides of the tapered bit line contact, and capacitor structures, allowing a subsequent salicide procedure to form metal suicide layers only on the exposed top surfaces of the DRAM word line, bit line contact, and capacitor structures.
摘要翻译：已经开发了一种用于将自对准硅化物层形成在DRAM字线结构上以及位线接触结构上的过程。该工艺具有嵌入锥形位线接触件的绝缘体层的选择性回蚀和锥形形状电容器结构，暴露多晶硅字线结构的顶表面部分。选择性回蚀程序还导致在锥形位线接触和电容器结构的侧面上形成绝缘体间隔物，并且允许随后的自对准硅化物程序仅在DRAM字线，位线的暴露的顶表面上形成金属硅化物层接触和电容器结构。

10. 发明授权

US08368160B2 Image sensing device and fabrication thereof 有权
标题翻译：图像感测装置及其制造
公开(公告)号：US08368160B2
公开(公告)日：2013-02-05
申请号：US12898419
申请日：2010-10-05
申请人： Chung-Wei Chang , Fang-Ming Huang , Chi-Shao Lin , Yu-Ping Hu
发明人： Chung-Wei Chang , Fang-Ming Huang , Chi-Shao Lin , Yu-Ping Hu
IPC分类号： H01L31/042
CPC分类号： H01L31/18 , H01L27/14621 , H01L27/1463 , H01L27/14645 , H01L27/14689
摘要： An image sensing device is disclosed, including an epitaxy layer having the a conductivity type, including a first pixel area corresponding to a first incident light, a second pixel area corresponding to a second incident light, and a third pixel area corresponding to a third incident light, wherein the wavelength of the first incident light is longer than that of the second incident light and the wavelength of the second incident light is longer than that of the third incident light. A photodiode is disposed in an upper portion of the epitaxy layer, and a first deep well for reducing pixel-to-pixel talk of the image sensing device is disposed in a lower portion of the epitaxy layer in the second pixel area and the third pixel area, wherein at least a portion of the epitaxy layer in first pixel area does not include the first deep well.
摘要翻译：公开了一种图像感测装置，包括具有导电类型的外延层，包括对应于第一入射光的第一像素区域，对应于第二入射光的第二像素区域和对应于第三入射光的第三像素区域光，其中第一入射光的波长比第二入射光的波长长，第二入射光的波长比第三入射光的波长长。光电二极管设置在外延层的上部，并且用于减少图像感测装置的像素到像素的通话的第一深阱设置在第二像素区域中的外延层的下部和第三像素区域，其中第一像素区域中的外延层的至少一部分不包括第一深孔。

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