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1. 发明授权

US09202827B2 Driver circuit and semiconductor device 有权
标题翻译：驱动电路和半导体器件
公开(公告)号：US09202827B2
公开(公告)日：2015-12-01
申请号：US12641446
申请日：2009-12-18
申请人： Jun Koyama , Junichiro Sakata , Tetsunori Maruyama , Yuki Imoto , Yuji Asano , Junichi Koezuka
发明人： Jun Koyama , Junichiro Sakata , Tetsunori Maruyama , Yuki Imoto , Yuji Asano , Junichi Koezuka
IPC分类号： H01L27/12 , H01L29/786
CPC分类号： H01L27/1255 , H01L27/12 , H01L27/1225 , H01L27/127 , H01L28/20 , H01L29/24 , H01L29/78606 , H01L29/7869
摘要： The silicon nitride layer 910 formed by plasma CVD using a gas containing a hydrogen compound such as silane (SiH4) and ammonia (NH3) is provided on and in direct contact with the oxide semiconductor layer 905 used for the resistor 354, and the silicon nitride layer 910 is provided over the oxide semiconductor layer 906 used for the thin film transistor 355 with the silicon oxide layer 909 serving as a barrier layer interposed therebetween. Therefore, a higher concentration of hydrogen is introduced into the oxide semiconductor layer 905 than into the oxide semiconductor layer 906. As a result, the resistance of the oxide semiconductor layer 905 used for the resistor 354 is made lower than that of the oxide semiconductor layer 906 used for the thin film transistor 355.
摘要翻译：通过使用含有氢化合物如硅烷（SiH 4）和氨（NH 3）的气体的等离子体CVD形成的氮化硅层910设置在与用于电阻器354的氧化物半导体层905上并直接接触，并且氮化硅在用于薄膜晶体管355的氧化物半导体层906上设置层910，氧化硅层909用作阻挡层。因此，与氧化物半导体层906相比，在氧化物半导体层905中引入更高浓度的氢。结果，使用于电阻器354的氧化物半导体层905的电阻比氧化物半导体层的电阻低 906用于薄膜晶体管355。

2. 发明授权

US08936965B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08936965B2
公开(公告)日：2015-01-20
申请号：US13295469
申请日：2011-11-14
申请人： Yuki Imoto , Yuji Asano , Tetsunori Maruyama
发明人： Yuki Imoto , Yuji Asano , Tetsunori Maruyama
IPC分类号： H01L51/40 , H01L29/786 , H01L29/49 , H01L51/05 , H01L29/423 , H01L29/66 , H01L21/8234
CPC分类号： H01L29/7869 , H01L21/823456 , H01L29/42392 , H01L29/4908 , H01L29/4966 , H01L29/66742 , H01L29/66969 , H01L51/0554
摘要： A normally-off transistor having an oxide semiconductor layer in a channel formation layer is provided. The transistor comprises: a first oxide semiconductor layer functioning as a channel formation region; a source electrode layer and a drain electrode layer which overlap with the first oxide semiconductor layer; a gate insulating layer which is provided over and in contact with the first oxide semiconductor layer, the source electrode layer, and the drain electrode layer; a second oxide semiconductor layer which is provided over and in contact with the gate insulating layer and overlaps with the first oxide semiconductor layer; and a gate electrode layer provided over the second oxide semiconductor layer. A manufacturing method thereof is also disclosed.
摘要翻译：提供了在通道形成层中具有氧化物半导体层的常关晶体管。晶体管包括：用作沟道形成区域的第一氧化物半导体层; 源极电极层和与第一氧化物半导体层重叠的漏电极层; 栅极绝缘层，设置在第一氧化物半导体层上，与源极电极层和漏极电极层接触; 第二氧化物半导体层，设置在栅极绝缘层上并与栅极绝缘层接触并与第一氧化物半导体层重叠; 以及设置在所述第二氧化物半导体层上的栅电极层。还公开了其制造方法。

3. 发明授权

US08748223B2 Method for manufacturing oxide semiconductor film and method for manufacturing semiconductor device 有权
标题翻译：氧化物半导体膜的制造方法及半导体装置的制造方法
公开(公告)号：US08748223B2
公开(公告)日：2014-06-10
申请号：US12888846
申请日：2010-09-23
申请人： Shunpei Yamazaki , Junichiro Sakata , Akiharu Miyanaga , Masayuki Sakakura , Junichi Koezuka , Tetsunori Maruyama , Yuki Imoto
发明人： Shunpei Yamazaki , Junichiro Sakata , Akiharu Miyanaga , Masayuki Sakakura , Junichi Koezuka , Tetsunori Maruyama , Yuki Imoto
IPC分类号： H01L21/00 , H01L21/16
CPC分类号： H01L29/66742 , C23C14/086 , H01L21/02422 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L29/7869
摘要： An object is to provide an oxide semiconductor having stable electric characteristics and a semiconductor device including the oxide semiconductor. A manufacturing method of a semiconductor film by a sputtering method includes the steps of holding a substrate in a treatment chamber which is kept in a reduced-pressure state; heating the substrate at lower than 400° C.; introducing a sputtering gas from which hydrogen and moisture are removed in the state where remaining moisture in the treatment chamber is removed; and forming an oxide semiconductor film over the substrate with use of a metal oxide which is provided in the treatment chamber as a target. When the oxide semiconductor film is formed, remaining moisture in a reaction atmosphere is removed; thus, the concentration of hydrogen and the concentration of hydride in the oxide semiconductor film can be reduced. Thus, the oxide semiconductor film can be stabilized.
摘要翻译：目的是提供具有稳定电特性的氧化物半导体和包括氧化物半导体的半导体器件。通过溅射法制造半导体膜的方法包括将基板保持在保持在减压状态的处理室中的步骤; 在低于400℃下加热基材。在去除处理室中的剩余水分的状态下引入除去氢气和水分的溅射气体; 以及使用设置在处理室中的金属氧化物作为目标，在基板上形成氧化物半导体膜。当形成氧化物半导体膜时，除去反应气氛中的剩余水分; 因此，可以降低氧化物半导体膜中的氢浓度和氢化物浓度。因此，可以使氧化物半导体膜稳定。

4. 发明申请

US20130011962A1 SPUTTERING TARGET, METHOD FOR MANUFACTURING SPUTTERING TARGET, AND METHOD FOR FORMING THIN FILM 有权
标题翻译：溅射目标，制造溅射目标的方法和形成薄膜的方法
公开(公告)号：US20130011962A1
公开(公告)日：2013-01-10
申请号：US13603484
申请日：2012-09-05
申请人： Shunpei YAMAZAKI , Tetsunori MARUYAMA , Yuki IMOTO , Hitomi SATO , Masahiro WATANABE , Mitsuo MASHIYAMA , Kenichi OKAZAKI , Motoki NAKASHIMA , Takashi SHIMAZU
发明人： Shunpei YAMAZAKI , Tetsunori MARUYAMA , Yuki IMOTO , Hitomi SATO , Masahiro WATANABE , Mitsuo MASHIYAMA , Kenichi OKAZAKI , Motoki NAKASHIMA , Takashi SHIMAZU
IPC分类号： H01L21/363 , C23C14/08 , C23C14/34
CPC分类号： C23C14/08 , B28B11/243 , C04B35/453 , C04B35/64 , C04B2235/3284 , C04B2235/3286 , C04B2235/76 , C23C14/086 , C23C14/3414 , C23C14/345 , H01L21/02565 , H01L21/02631 , H01L29/24 , H01L29/66969 , H01L29/7869
摘要： There have been cases where transistors formed using oxide semiconductors are inferior in reliability to transistors formed using amorphous silicon. Thus, in the present invention, a semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.
摘要翻译：已经有使用氧化物半导体形成的晶体管的可靠性与使用非晶硅形成的晶体管的可靠性差。因此，在本发明中，制造了包括使用氧化物半导体形成的高可靠性晶体管的半导体器件。使用包含具有结晶性的氧化物半导体的溅射靶，通过溅射法沉积氧化物半导体膜，并且其中晶体的c轴方向平行于氧化物半导体的顶表面的法向矢量。通过混合原料形成靶，使其组成比可以得到晶体结构。

5. 发明申请

US20120241736A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120241736A1
公开(公告)日：2012-09-27
申请号：US13422244
申请日：2012-03-16
申请人： Yuki IMOTO , Tetsunori MARUYAMA , Yuta ENDO
发明人： Yuki IMOTO , Tetsunori MARUYAMA , Yuta ENDO
IPC分类号： H01L29/786 , H01L21/44
CPC分类号： H01L29/7869
摘要： In the transistor including an oxide semiconductor film, a gate insulating film of the transistor including an oxide semiconductor film has a stacked-layer structure of the hydrogen capture film and the hydrogen permeable film. At this time, the hydrogen permeable film is formed on a side which is in contact with the oxide semiconductor film, and the hydrogen capture film is formed on a side which is in contact with a gate electrode. After that, hydrogen released from the oxide semiconductor film is transferred to the hydrogen capture film through the hydrogen permeable film by the heat treatment.
摘要翻译：在包括氧化物半导体膜的晶体管中，包括氧化物半导体膜的晶体管的栅极绝缘膜具有氢捕获膜和氢可渗透膜的堆叠层结构。此时，氢氧渗透膜形成在与氧化物半导体膜接触的一侧，并且氢捕获膜形成在与栅电极接触的一侧上。之后，通过热处理从氧化物半导体膜释放的氢气通过氢可渗透膜转移到氢捕获膜。

6. 发明申请

US20100163874A1 DRIVER CIRCUIT AND SEMICONDUCTOR DEVICE 有权
标题翻译：驱动电路和半导体器件
公开(公告)号：US20100163874A1
公开(公告)日：2010-07-01
申请号：US12641446
申请日：2009-12-18
申请人： Jun KOYAMA , Junichiro SAKATA , Tetsunori MARUYAMA , Yuki IMOTO , Yuji ASANO , Junichi KOEZUKA
发明人： Jun KOYAMA , Junichiro SAKATA , Tetsunori MARUYAMA , Yuki IMOTO , Yuji ASANO , Junichi KOEZUKA
IPC分类号： H01L27/06
CPC分类号： H01L27/1255 , H01L27/12 , H01L27/1225 , H01L27/127 , H01L28/20 , H01L29/24 , H01L29/78606 , H01L29/7869
摘要： The silicon nitride layer 910 formed by plasma CVD using a gas containing a hydrogen compound such as silane (SiH4) and ammonia (NH3) is provided on and in direct contact with the oxide semiconductor layer 905 used for the resistor 354, and the silicon nitride layer 910 is provided over the oxide semiconductor layer 906 used for the thin film transistor 355 with the silicon oxide layer 909 serving as a barrier layer interposed therebetween. Therefore, a higher concentration of hydrogen is introduced into the oxide semiconductor layer 905 than into the oxide semiconductor layer 906. As a result, the resistance of the oxide semiconductor layer 905 used for the resistor 354 is made lower than that of the oxide semiconductor layer 906 used for the thin film transistor 355.
摘要翻译：通过使用含有氢化合物如硅烷（SiH 4）和氨（NH 3）的气体的等离子体CVD形成的氮化硅层910设置在与用于电阻器354的氧化物半导体层905上并直接接触，并且氮化硅在用于薄膜晶体管355的氧化物半导体层906上设置层910，氧化硅层909用作阻挡层。因此，与氧化物半导体层906相比，在氧化物半导体层905中引入更高浓度的氢。结果，使用于电阻器354的氧化物半导体层905的电阻比氧化物半导体层的电阻低 906用于薄膜晶体管355。

7. 发明授权

US09472676B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09472676B2
公开(公告)日：2016-10-18
申请号：US13422251
申请日：2012-03-16
申请人： Yuki Imoto , Tetsunori Maruyama , Yuta Endo
发明人： Yuki Imoto , Tetsunori Maruyama , Yuta Endo
IPC分类号： H01L29/786 , H01L27/32 , H01L51/05
CPC分类号： H01L29/7869 , H01L27/3274 , H01L51/0545
摘要： A semiconductor device having excellent electric characteristics and a method for manufacturing the semiconductor device are provided. A method for manufacturing a semiconductor device includes the steps of: forming a gate electrode; forming a gate insulating film to cover the gate electrode; forming an oxide semiconductor film over the gate insulating film; forming a hydrogen permeable film over the oxide semiconductor film; forming a hydrogen capture film over the hydrogen permeable film; performing heat treatment to release hydrogen from the oxide semiconductor film; forming a source electrode and a drain electrode to be in contact with a part of the oxide semiconductor film; and removing an exposed portion of the hydrogen capture film to form a channel protective film formed of the hydrogen permeable film. A semiconductor device manufactured by the above method is also provided.
摘要翻译：提供了具有优异的电特性的半导体器件和制造该半导体器件的方法。一种制造半导体器件的方法包括以下步骤：形成栅电极; 形成栅绝缘膜以覆盖栅电极; 在所述栅极绝缘膜上形成氧化物半导体膜; 在所述氧化物半导体膜上形成氢渗透膜; 在氢可渗透膜上形成氢捕获膜; 进行热处理以从氧化物半导体膜释放氢; 形成与所述氧化物半导体膜的一部分接触的源电极和漏电极; 并除去氢捕获膜的暴露部分以形成由氢可渗透膜形成的通道保护膜。还提供了通过上述方法制造的半导体器件。

8. 发明授权

US09196738B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09196738B2
公开(公告)日：2015-11-24
申请号：US12965197
申请日：2010-12-10
申请人： Junichiro Sakata , Tetsunori Maruyama , Yuki Imoto
发明人： Junichiro Sakata , Tetsunori Maruyama , Yuki Imoto
IPC分类号： H01L21/336 , H01L29/786
CPC分类号： H01L29/7869 , H01L27/124 , H01L29/24
摘要： Many of the physical properties of a silicon semiconductor have already been understood, whereas many of the physical properties of an oxide semiconductor have been still unclear. In particular, an adverse effect of an impurity on an oxide semiconductor has been still unclear. In view of the above, a structure is disclosed in which an impurity that influences electrical characteristics of a semiconductor device including an oxide semiconductor layer is prevented or is eliminated. A semiconductor device which includes a gate electrode, an oxide semiconductor layer, and a gate insulating layer provided between the gate electrode and the oxide semiconductor layer and in which the nitrogen concentration in the oxide semiconductor layer is 1×1020 atoms/cm3 or less is provided.
摘要翻译：已经理解了硅半导体的许多物理性质，而氧化物半导体的许多物理性质仍然不清楚。特别是杂质对氧化物半导体的不利影响还不清楚。鉴于上述，公开了防止或消除影响包括氧化物半导体层的半导体器件的电特性的杂质的结构。设置在栅电极和氧化物半导体层之间并且氧化物半导体层中的氮浓度为1×1020原子/ cm3以下的栅极，氧化物半导体层和栅极绝缘层的半导体装置为提供。

9. 发明授权

US09171938B2 Semiconductor element and method for manufacturing the same 有权
标题翻译：半导体元件及其制造方法
公开(公告)号：US09171938B2
公开(公告)日：2015-10-27
申请号：US12888835
申请日：2010-09-23
申请人： Shunpei Yamazaki , Junichiro Sakata , Akiharu Miyanaga , Masayuki Sakakura , Junichi Koezuka , Tetsunori Maruyama , Yuki Imoto
发明人： Shunpei Yamazaki , Junichiro Sakata , Akiharu Miyanaga , Masayuki Sakakura , Junichi Koezuka , Tetsunori Maruyama , Yuki Imoto
IPC分类号： H01L21/02 , H01L29/66 , H01L27/12 , H01L29/786
CPC分类号： H01L29/66969 , H01L21/02565 , H01L27/1225 , H01L29/7869
摘要： An object is to provide a thin film transistor and a method for manufacturing the thin film transistor including an oxide semiconductor with a controlled threshold voltage, high operation speed, a relatively easy manufacturing process, and sufficient reliability. An impurity having influence on carrier concentration in the oxide semiconductor layer, such as a hydrogen atom or a compound containing a hydrogen atom such as H2O, may be eliminated. An oxide insulating layer containing a large number of defects such as dangling bonds may be formed in contact with the oxide semiconductor layer, such that the impurity diffuses into the oxide insulating layer and the impurity concentration in the oxide semiconductor layer is reduced. The oxide semiconductor layer or the oxide insulating layer in contact with the oxide semiconductor layer may be formed in a deposition chamber which is evacuated with use of a cryopump whereby the impurity concentration is reduced.
摘要翻译：目的在于提供一种薄膜晶体管及其制造方法，该薄膜晶体管包括具有受控阈值电压，高操作速度，相对容易的制造工艺以及足够的可靠性的氧化物半导体。可以消除影响氧化物半导体层中的载流子浓度的杂质，例如氢原子或含有氢原子如H 2 O的化合物。可以与氧化物半导体层接触形成含有大量缺陷的氧化物绝缘层，例如悬挂键，使得杂质扩散到氧化物绝缘层中，并且氧化物半导体层中的杂质浓度降低。与氧化物半导体层接触的氧化物半导体层或氧化物绝缘层可以在使用低温泵抽真空的沉积室中形成，从而杂质浓度降低。

10. 发明授权

US08889477B2 Method for forming thin film utilizing sputtering target 有权
标题翻译：利用溅射靶形成薄膜的方法
公开(公告)号：US08889477B2
公开(公告)日：2014-11-18
申请号：US13603484
申请日：2012-09-05
申请人： Shunpei Yamazaki , Tetsunori Maruyama , Yuki Imoto , Hitomi Sato , Masahiro Watanabe , Mitsuo Mashiyama , Kenichi Okazaki , Motoki Nakashima , Takashi Shimazu
发明人： Shunpei Yamazaki , Tetsunori Maruyama , Yuki Imoto , Hitomi Sato , Masahiro Watanabe , Mitsuo Mashiyama , Kenichi Okazaki , Motoki Nakashima , Takashi Shimazu
IPC分类号： H01L21/00 , C23C14/08 , C23C14/34
CPC分类号： C23C14/08 , B28B11/243 , C04B35/453 , C04B35/64 , C04B2235/3284 , C04B2235/3286 , C04B2235/76 , C23C14/086 , C23C14/3414 , C23C14/345 , H01L21/02565 , H01L21/02631 , H01L29/24 , H01L29/66969 , H01L29/7869
摘要： A semiconductor device including a highly reliable transistor formed using an oxide semiconductor is manufactured. An oxide semiconductor film is deposited by a sputtering method, using a sputtering target including an oxide semiconductor having crystallinity, and in which the direction of the c-axis of a crystal is parallel to a normal vector of the top surface of the oxide semiconductor. The target is formed by mixing raw materials so that its composition ratio can obtain a crystal structure.
摘要翻译：制造包括使用氧化物半导体形成的高可靠性晶体管的半导体器件。使用包含具有结晶性的氧化物半导体的溅射靶，通过溅射法沉积氧化物半导体膜，并且其中晶体的c轴方向平行于氧化物半导体的顶表面的法向矢量。通过混合原料形成靶，使其组成比可以得到晶体结构。

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