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1. 发明申请

US20220367264A1 SELECTIVE TUNGSTEN DEPOSITION AT LOW TEMPERATURES 有权
公开(公告)号：US20220367264A1
公开(公告)日：2022-11-17
申请号：US17878599
申请日：2022-08-01
申请人： Applied Materials, Inc.
发明人： Yi Xu , Yufei Hu , Yu Lei , Kazuya Daito , Da He , Jiajie Cen
IPC分类号： H01L21/768 , H01L21/285 , H01L23/532 , H01L23/522
摘要： Embodiments of the disclosure relate to methods of depositing tungsten. Some embodiments of the disclosure provide methods for depositing tungsten which are performed at relatively low temperatures. Some embodiments of the disclosure provide methods in which the ratio between reactant gasses is controlled. Some embodiments of the disclosure provide selective deposition of tungsten. Some embodiments of the disclosure provide methods for depositing tungsten films at a low temperature with relatively low roughness, stress and impurity levels.

2. 发明授权

US10793951B2 Apparatus to improve substrate temperature uniformity 有权
公开(公告)号：US10793951B2
公开(公告)日：2020-10-06
申请号：US15960183
申请日：2018-04-23
申请人： APPLIED MATERIALS, INC.
发明人： Gwo-Chuan Tzu , Kazuya Daito , Sang-Hyeob Lee
IPC分类号： C23C16/46 , C23C16/458 , C23C16/455 , H01L21/687
摘要： Apparatus for improving substrate temperature uniformity in a substrate processing chamber are provided herein. In some embodiments, a substrate support processing chamber may include a chamber body having a bottom portion and a sidewall having a slit valve opening to load and unload substrates, a pin lift mechanism, disposed in a pin lift mechanism opening formed in the bottom portion of the chamber body, having a plurality of substrate support pins coupled to the pin lift mechanism, a movable substrate support heater having substrate support portion and a shaft, and a cover plate disposed about the shaft of the movable substrate support, wherein the cover plate covers the pin lift mechanism and pin lift mechanism opening.

3. 发明授权

US10508339B2 Blocker plate for use in a substrate process chamber 有权
公开(公告)号：US10508339B2
公开(公告)日：2019-12-17
申请号：US15663734
申请日：2017-07-29
申请人： APPLIED MATERIALS, INC.
发明人： Xiaoxiong Yuan , Yu Lei , Yi Xu , Kazuya Daito , Pingyan Lei , Dien-Yeh Wu , Umesh M. Kelkar , Vikash Banthia
IPC分类号： C23C16/455 , H01L21/67
摘要： Embodiments of a blocker plate for use in a substrate process chamber are disclosed herein. In some embodiments, a blocker plate for use in a substrate processing chamber configured to process substrates having a given diameter includes: an annular rim; a central plate disposed within the annular rim; and a plurality of spokes coupling the central plate to the annular rim.

4. 发明申请

US20140106083A1 TUNGSTEN GROWTH MODULATION BY CONTROLLING SURFACE COMPOSITION 有权
标题翻译：通过控制表面组成调节生长调节
公开(公告)号：US20140106083A1
公开(公告)日：2014-04-17
申请号：US13968057
申请日：2013-08-15
申请人： Applied Materials, Inc.
发明人： KAI WU , Kiejin Park , Sang Ho Yu , Sang-Hyeob Lee , Kazuya Daito , Joshua Collins , Benjamin C. Wang
IPC分类号： C23C16/452
CPC分类号： C23C16/452 , C23C16/08 , C23C16/50
摘要： A method for selectively controlling deposition rate of a catalytic material during a catalytic bulk CVD deposition is disclosed herein. The method can include positioning a substrate in a processing chamber including both surface regions and gap regions, depositing a first nucleation layer comprising tungsten conformally over an exposed surface of the substrate, treating at least a portion of the first nucleation layer with activated nitrogen, wherein the activated nitrogen is deposited preferentially on the surface regions, reacting a first deposition gas comprising tungsten halide and hydrogen-containing gas to deposit a tungsten fill layer preferentially in gap regions of the substrate, reacting a nucleation gas comprising a tungsten halide to form a second nucleation layer, and reacting a second deposition gas comprising tungsten halide and a hydrogen-containing gas to deposit a tungsten field layer.
摘要翻译：本文公开了一种用于在催化体积CVD沉积期间选择性地控制催化材料的沉积速率的方法。该方法可以包括将衬底定位在包括表面区域和间隙区域的处理室中，将包含钨的第一成核层保形地沉积在衬底的暴露表面上，用活性氮处理至少一部分第一成核层，其中将活化的氮优选沉积在表面区域上，使包含卤化钨和含氢气体的第一沉积气体优先沉积钨填充层以在衬底的间隙区域中反应，使包含卤化钨的成核气体反应形成第二使包含卤化钨和含氢气体的第二沉积气体反应以沉积钨场层。

5. 发明授权

US11598003B2 Substrate processing chamber having heated showerhead assembly 有权
公开(公告)号：US11598003B2
公开(公告)日：2023-03-07
申请号：US15702234
申请日：2017-09-12
申请人： APPLIED MATERIALS, INC.
发明人： Faruk Gungor , Dien-Yeh Wu , Joel M. Huston , Mei Chang , Xiaoxiong Yuan , Kazuya Daito , Avgerinos V. Gelatos , Takashi Kuratomi , Yu Chang , Bin Cao
IPC分类号： C23C16/455 , C23C16/505 , C23C16/46 , C23C16/458
摘要： Apparatus for processing a substrate are provided herein. In some embodiments a showerhead assembly includes a gas distribution plate having a plurality of apertures; a holder having a wall, an radially inwardly extending flange extending from a lower portion of the wall and coupled to the gas distribution plate, and a radially outwardly extending flange extending from an upper portion of the wall, wherein the wall has a thickness between about 0.015 inches and about 0.2 inches; and a heating apparatus disposed above and spaced apart from the gas distribution plate, wherein the heating apparatus includes a heater configured to heat the gas distribution plate.

6. 发明授权

US11515200B2 Selective tungsten deposition within trench structures 有权
公开(公告)号：US11515200B2
公开(公告)日：2022-11-29
申请号：US17110826
申请日：2020-12-03
申请人： Applied Materials, Inc.
发明人： Yi Xu , Yufei Hu , He Ren , Yu Lei , Shi You , Kazuya Daito
IPC分类号： H01L21/768
摘要： Embodiments of the disclosure provide methods which reduce or eliminate lateral growth of a selective tungsten layer. Further embodiments provide an integrated clean and deposition method which improves the selectivity of selectively deposited tungsten on trench structures. Additional embodiments provide methods for forming a more uniform and selective bottom-up gap fill for trench structures with improved film properties.

7. 发明申请

US20180145034A1 Methods To Selectively Deposit Corrosion-Free Metal Contacts 审中-公开
公开(公告)号：US20180145034A1
公开(公告)日：2018-05-24
申请号：US15817985
申请日：2017-11-20
申请人： Applied Materials, Inc.
发明人： Yi Xu , Feiyue Ma , Yu Lei , Kazuya Daito , Vikash Banthia , Kai Wu , Jenn Yue Wang , Mei Chang
IPC分类号： H01L23/532 , H01L21/02 , H01L21/768 , H01L21/3205 , H01L23/528 , H01L21/285
摘要： Methods of forming a contact line comprising cleaning the surface of a cobalt film in a trench and forming a protective layer on the surface of the cobalt, the protective layer comprising one or more of a silicide or germide. Semiconductor devices with the contact lines are also disclosed.

8. 发明授权

US09162930B2 PVD ALN film with oxygen doping for a low etch rate hardmask film 有权
标题翻译：具有氧掺杂的PVD ALN膜用于低蚀刻速率的硬掩模膜
公开(公告)号：US09162930B2
公开(公告)日：2015-10-20
申请号：US13867606
申请日：2013-04-22
申请人： Applied Materials, Inc.
发明人： Yong Cao , Kazuya Daito , Rajkumar Jakkaraju , Xianmin Tang
IPC分类号： C23C14/34 , C04B35/581 , C23C14/06 , H01L21/033 , H01L21/3213 , H01L21/02
CPC分类号： C04B35/581 , C23C14/0617 , H01L21/02178 , H01L21/02266 , H01L21/0254 , H01L21/02573 , H01L21/02631 , H01L21/0332 , H01L21/32139
摘要： The present invention generally relates to a doped aluminum nitride hardmask and a method of making a doped aluminum nitride hardmask. By adding a small amount of dopant, such as oxygen, when forming the aluminum nitride hardmask, the wet etch rate of the hardmask can be significantly reduced. Additionally, due to the presence of the dopant, the grain size of the hardmask is reduced compared to a non-doped aluminum nitride hardmask. The reduced grain size leads to smoother features in the hardmask which leads to more precise etching of the underlying layer when utilizing the hardmask.
摘要翻译：本发明一般涉及掺杂氮化铝硬掩模和制造掺杂氮化铝硬掩模的方法。通过在形成氮化铝硬掩模时添加少量的掺杂剂，例如氧，可以显着降低硬掩模的湿蚀刻速率。另外，由于掺杂剂的存在，与未掺杂的氮化铝硬掩模相比，硬掩模的晶粒尺寸减小。减小的晶粒尺寸导致在硬掩模中更平滑的特征，这导致在利用硬掩模时对底层进行更精确的蚀刻。

9. 发明申请

US20220319837A1 DUAL PLASMA PRE-CLEAN FOR SELECTIVE GAP FILL 有权
公开(公告)号：US20220319837A1
公开(公告)日：2022-10-06
申请号：US17844346
申请日：2022-06-20
申请人： Applied Materials, Inc.
发明人： Yi Xu , Yufei Hu , Kazuya Daito , Yu Lei , Dien-Yeh Wu , Jallepally Ravi
IPC分类号： H01L21/02 , H01L21/67 , H01J37/32 , B08B7/00
摘要： Methods for pre-cleaning substrates having metal and dielectric surfaces are described. A substrate comprising a surface structure with a metal bottom, dielectric sidewalls, and a field of dielectric is exposed to a dual plasma treatment in a processing chamber to remove chemical residual and/or impurities from the metal bottom, the dielectric sidewalls, and/or the field of the dielectric and/or repair surface defects in the dielectric sidewalls and/or the field of the dielectric. The dual plasma treatment comprises a direct plasma and a remote plasma.

10. 发明申请

US20220319813A1 Processing Chamber With Multiple Plasma Units 有权
公开(公告)号：US20220319813A1
公开(公告)日：2022-10-06
申请号：US17844245
申请日：2022-06-20
申请人： Applied Materials, Inc.
发明人： Kazuya Daito , Yi Xu , Yu Lei , Takashi Kuratomi , Jallepally Ravi , Pingyan Lei , Dien-Yeh Wu
IPC分类号： H01J37/32 , H01L21/67 , C23C16/455 , C23C16/50 , H05H1/46
摘要： Provided is a processing chamber configured to contain a semiconductor substrate in a processing region of the chamber. The processing chamber includes a remote plasma unit and a direct plasma unit, wherein one of the remote plasma unit or the direct plasma unit generates a remote plasma and the other of the remote plasma unit or the direct plasma unit generates a direct plasma. The combination of a remote plasma unit and a direct plasma unit is used to remove, etch, clean, or treat residue on a substrate from previous processing and/or from native oxide formation. The combination of a remote plasma unit and direct plasma unit is used to deposit thin films on a substrate.

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