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1. 发明授权

US10857655B2 Substrate support plate with improved lift pin sealing 有权
公开(公告)号：US10857655B2
公开(公告)日：2020-12-08
申请号：US13798424
申请日：2013-03-13
申请人： APPLIED MATERIALS, INC.
发明人： Olkan Cuvalci , Gwo-Chuan Tzu , Xiaoxiong Yuan
IPC分类号： B25B11/00 , H01L21/687
摘要： Embodiments of lift pin assemblies and substrate supports having such lift pin assemblies are provided herein. In some embodiments, a lift pin assembly includes a body with a first end including a flange and an opposing second end; a bore through the body from the first end to the second end; a profile on an outer surface proximate a second end; and a collar, wherein the profile is configured to removably lock the collar onto the second end.

2. 发明授权

US10508339B2 Blocker plate for use in a substrate process chamber 有权
公开(公告)号：US10508339B2
公开(公告)日：2019-12-17
申请号：US15663734
申请日：2017-07-29
申请人： APPLIED MATERIALS, INC.
发明人： Xiaoxiong Yuan , Yu Lei , Yi Xu , Kazuya Daito , Pingyan Lei , Dien-Yeh Wu , Umesh M. Kelkar , Vikash Banthia
IPC分类号： C23C16/455 , H01L21/67
摘要： Embodiments of a blocker plate for use in a substrate process chamber are disclosed herein. In some embodiments, a blocker plate for use in a substrate processing chamber configured to process substrates having a given diameter includes: an annular rim; a central plate disposed within the annular rim; and a plurality of spokes coupling the central plate to the annular rim.

3. 发明授权

US10407771B2 Atomic layer deposition chamber with thermal lid 有权
公开(公告)号：US10407771B2
公开(公告)日：2019-09-10
申请号：US14507780
申请日：2014-10-06
申请人： APPLIED MATERIALS, INC.
发明人： Anqing Cui , Faruk Gungor , Dien-Yeh Wu , Vikas Jangra , Muhammad M. Rasheed , Wei V. Tang , Yixiong Yang , Xiaoxiong Yuan , Kyoung-Ho Bu , Srinivas Gandikota , Yu Chang , William W. Kuang
IPC分类号： C23C16/40 , C23C16/44 , C23C16/455 , H01J37/32 , C23C16/452
摘要： Methods and apparatus for cleaning an atomic layer deposition chamber are provided herein. In some embodiments, a chamber lid assembly includes: a housing enclosing a central channel that extends along a central axis and has an upper portion and a lower portion; a lid plate coupled to the housing and having a contoured bottom surface that extends downwardly and outwardly from a central opening coupled to the lower portion of the central channel to a peripheral portion of the lid plate; a first heating element to heat the central channel; a second heating element to heat the bottom surface of the lid plate; a remote plasma source fluidly coupled to the central channel; and an isolation collar coupled between the remote plasma source and the housing, wherein the isolation collar has an inner channel extending through the isolation collar to fluidly couple the remote plasma source and the central channel.

4. 发明授权

US09853579B2 Rotatable heated electrostatic chuck 有权
公开(公告)号：US09853579B2
公开(公告)日：2017-12-26
申请号：US14560744
申请日：2014-12-04
申请人： APPLIED MATERIALS, INC.
发明人： Anantha K. Subramani , Ashish Goel , Wei W. Wang , Bharath Swaminathan , Vijay D. Parkhe , Xiaoxiong Yuan
IPC分类号： H02N13/00 , H01L21/683 , H01L21/67 , H01L21/687 , H01J37/32
CPC分类号： H02N13/00 , H01J37/32091 , H01J37/32715 , H01J37/32724 , H01L21/67103 , H01L21/67115 , H01L21/6831 , H01L21/68742 , H01L21/68792
摘要： An electrostatic chuck includes a dielectric disk having a support surface to support a substrate and an opposing second surface, wherein at least one chucking electrode is disposed within the dielectric disk; a radio frequency (RF) bias plate disposed below the dielectric disk; a plurality of lamps disposed below the RF bias plate to heat the dielectric disk; a metallic plate disposed below the lamps to absorb heat generated by the lamps; a shaft coupled to the second surface of the dielectric disk at a first end of the shaft to support the dielectric disk in a spaced apart relation to the RF bias plate and extending away from the dielectric disk and through the RF bias plate and the metallic plate; and a rotation assembly coupled to the shaft to rotate the shaft and the dielectric disk with respect to the RF bias plate, lamps, and metallic plate.

5. 发明授权

US11421322B2 Blocker plate for use in a substrate process chamber 有权
公开(公告)号：US11421322B2
公开(公告)日：2022-08-23
申请号：US16520646
申请日：2019-07-24
申请人： APPLIED MATERIALS, INC.
发明人： Xiaoxiong Yuan , Yu Lei , Yi Xu , Kazuya Daito , Pingyan Lei , Dien-Yeh Wu , Umesh M. Kelkar , Vikash Banthia
IPC分类号： C23C16/455 , H01L21/67
摘要： Embodiments of a blocker plate for use in a substrate process chamber are disclosed herein. In some embodiments, a blocker plate for use in a substrate processing chamber configured to process substrates having a given diameter includes: an annular rim; a central plate disposed within the annular rim; and a plurality of spokes coupling the central plate to the annular rim.

6. 发明授权

US10752990B2 Apparatus and methods to remove residual precursor inside gas lines post-deposition 有权
公开(公告)号：US10752990B2
公开(公告)日：2020-08-25
申请号：US15471291
申请日：2017-03-28
申请人： Applied Materials, Inc.
发明人： Daping Yao , Kenric Choi , Xiaoxiong Yuan , Jiang Lu , Can Xu , Paul F. Ma , Mei Chang
IPC分类号： C23C16/455 , C23C16/44 , C23C16/448 , C23C16/18 , F16K31/12 , F16K31/60
摘要： Apparatus and methods for supplying a gas to a processing chamber are described. The apparatus comprises an inlet line and an outlet line, each with two valves, in fluid communication an ampoule. A bypass line connects the inlet valve and outlet valve closest to the ampoule. The apparatus and methods of use allow a precursor residue to be removed from the delivery lines of a processing chamber.

7. 发明申请

US20180250695A1 Apparatus for Increasing Flux from an Ampoule 审中-公开
公开(公告)号：US20180250695A1
公开(公告)日：2018-09-06
申请号：US15910398
申请日：2018-03-02
申请人： Applied Materials, Inc.
发明人： Kenric Choi , Xiaoxiong Yuan , Daping Yao , Mei Chang
IPC分类号： B05B7/24 , B65D1/09 , B05B7/00
CPC分类号： B05B7/2491 , B05B7/0075 , B65D1/09 , C23C16/448 , H01L21/67017 , H01L21/68
摘要： Ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules include a container with an inlet port and an outlet port. The inlet port has a showerhead that the end within the container. The showerhead has at least two angled nozzles to direct the flow of gas within the cavity so that the gas flow is not perpendicular to the surface of a liquid within the ampoule.

8. 发明申请

US20140087091A1 APPARATUSES AND METHODS FOR ATOMIC LAYER DEPOSITION 有权
标题翻译：用于原子层沉积的装置和方法
公开(公告)号：US20140087091A1
公开(公告)日：2014-03-27
申请号：US13625229
申请日：2012-09-24
申请人： Applied Materials, Inc.
发明人： Hyman W.H. Lam , Bo Zheng , Hua Ai , Michael Jackson , Xiaoxiong Yuan , Hougong Wang , Salvador P. Umotoy , San H. Yu
IPC分类号： B05B1/14 , C23C16/34
CPC分类号： C23C16/45565 , C23C16/4412 , C23C16/45536 , C23C16/45544 , C23C16/4558 , H01J37/32449 , Y10T137/87265
摘要： Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel. The chamber lid assembly further contains a showerhead assembly disposed below the inlet manifold assembly, a water box disposed between the inlet manifold assembly and the showerhead assembly, and a remote plasma system (RPS) disposed above and coupled with the inlet manifold assembly, and in fluid communication with the centralized channel.
摘要翻译：本发明的实施例提供了诸如等离子体增强型ALD（PE-ALD）的原子层沉积（ALD）的装置和方法。在一些实施例中，提供了一种PE-ALD室，其包括与其中具有基板支撑件的室主体耦合的室盖组件。在一个实施例中，室盖组件具有入口歧管组件，其包含围绕集中通道的环形通道，其中集中通道延伸穿过入口歧管组件，并且入口歧管组件还包含从环形通道延伸的注入孔，集中通道侧壁，集中通道。室盖组件还包括布置在入口歧管组件下方的喷头组件，设置在入口歧管组件和喷头组件之间的水箱，以及设置在入口歧管组件上方并与入口歧管组件耦合的远程等离子体系统（RPS）与集中通道的流体通信。

9. 发明授权

US11598003B2 Substrate processing chamber having heated showerhead assembly 有权
公开(公告)号：US11598003B2
公开(公告)日：2023-03-07
申请号：US15702234
申请日：2017-09-12
申请人： APPLIED MATERIALS, INC.
发明人： Faruk Gungor , Dien-Yeh Wu , Joel M. Huston , Mei Chang , Xiaoxiong Yuan , Kazuya Daito , Avgerinos V. Gelatos , Takashi Kuratomi , Yu Chang , Bin Cao
IPC分类号： C23C16/455 , C23C16/505 , C23C16/46 , C23C16/458
摘要： Apparatus for processing a substrate are provided herein. In some embodiments a showerhead assembly includes a gas distribution plate having a plurality of apertures; a holder having a wall, an radially inwardly extending flange extending from a lower portion of the wall and coupled to the gas distribution plate, and a radially outwardly extending flange extending from an upper portion of the wall, wherein the wall has a thickness between about 0.015 inches and about 0.2 inches; and a heating apparatus disposed above and spaced apart from the gas distribution plate, wherein the heating apparatus includes a heater configured to heat the gas distribution plate.

10. 发明授权

US11555244B2 High temperature dual chamber showerhead 有权
公开(公告)号：US11555244B2
公开(公告)日：2023-01-17
申请号：US17078664
申请日：2020-10-23
申请人： APPLIED MATERIALS, INC.
发明人： Pingyan Lei , Dien-Yeh Wu , Jallepally Ravi , Takashi Kuratomi , Xiaoxiong Yuan , Manjunatha Koppa , Vinod Konda Purathe
IPC分类号： C23C16/40 , C23C16/455
摘要： Embodiments of showerheads are provided herein. In some embodiments, a showerhead for use in a process chamber includes a gas distribution plate having an upper surface and a lower surface; a plurality of channels extending through the gas distribution plate substantially perpendicular to the lower surface; a plurality of first gas delivery holes extending from the upper surface to the lower surface between adjacent channels of the plurality of channels to deliver a first process gas through the gas distribution plate; and a plurality of second gas delivery holes extending from the plurality of channels to the lower surface to deliver a second process gas therethrough without mixing with the first process gas.

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