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1. 发明授权

US10580620B2 Symmetric plasma process chamber 有权
公开(公告)号：US10580620B2
公开(公告)日：2020-03-03
申请号：US15199068
申请日：2016-06-30
申请人： Applied Materials, Inc.
发明人： James D. Carducci , Hamid Tavassoli , Ajit Balakrishna , Zhigang Chen , Andrew Nguyen , Douglas A. Buchberger, Jr. , Kartik Ramaswamy , Shahid Rauf , Kenneth S. Collins
IPC分类号： H01J37/32 , H05H1/46
摘要： Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.

2. 发明授权

US10535502B2 Symmetric plasma process chamber 有权
公开(公告)号：US10535502B2
公开(公告)日：2020-01-14
申请号：US15198969
申请日：2016-06-30
申请人： Applied Materials, Inc.
发明人： James D. Carducci , Hamid Tavassoli , Ajit Balakrishna , Zhigang Chen , Andrew Nguyen , Douglas A. Buchberger, Jr. , Kartik Ramaswamy , Shahid Rauf , Kenneth S. Collins
IPC分类号： H01J37/32 , H05H1/46
摘要： Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.

3. 发明授权

US10453656B2 Symmetric plasma process chamber 有权
公开(公告)号：US10453656B2
公开(公告)日：2019-10-22
申请号：US15198993
申请日：2016-06-30
申请人： Applied Materials, Inc.
发明人： James D. Carducci , Hamid Tavassoli , Ajit Balakrishna , Zhigang Chen , Andrew Nguyen , Douglas A. Buchberger, Jr. , Kartik Ramaswamy , Shahid Rauf , Kenneth S. Collins
IPC分类号： H01J37/32 , H05H1/46
摘要： Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.

4. 发明授权

US09741546B2 Symmetric plasma process chamber 有权
公开(公告)号：US09741546B2
公开(公告)日：2017-08-22
申请号：US13629267
申请日：2012-09-27
申请人： Applied Materials, Inc.
发明人： James D. Carducci , Hamid Tavassoli , Ajit Balakrishna , Zhigang Chen , Andrew Nguyen , Douglas A. Buchberger, Jr. , Kartik Ramaswamy , Shahid Rauf , Kenneth S. Collins
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01J37/32 , H05H1/46
CPC分类号： H01J37/3244 , H01J37/32082 , H01J37/32091 , H01J37/32495 , H01J37/32541 , H01J37/32568 , H01J37/32724 , H01J37/32733 , H01J37/32743 , H01J37/32834 , H01J2237/3321 , H01J2237/3323 , H01J2237/3344 , H05H1/46
摘要： Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.

5. 发明申请

US20150075719A1 SYMMETRIC VHF SOURCE FOR A PLASMA REACTOR 有权
标题翻译：等离子体反应器的对称甚高频源
公开(公告)号：US20150075719A1
公开(公告)日：2015-03-19
申请号：US14548692
申请日：2014-11-20
申请人： APPLIED MATERIALS, INC.
发明人： Kartik Ramaswamy , Igor Markovsky , Zhigang Chen , James D. Carducci , Kenneth S. Collins , Shahid Rauf , Nipun Misra , Leonid Dorf , Zheng John Ye
IPC分类号： H01J37/32
CPC分类号： H01J37/32091 , H01J37/32018 , H01J37/32082 , H01J37/32183 , H01J37/32541 , H01J37/32568 , H01J37/32577 , H01J37/32587 , H01J37/32596 , H01J37/3266 , H01J37/32715 , H01J37/32834
摘要： The disclosure pertains to a capacitively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a symmetrical power distribution.
摘要翻译：本公开涉及通过具有对称功率分布的阻抗匹配同轴谐振器施加VHF功率的电容耦合等离子体源。

6. 发明授权

US08933628B2 Inductively coupled plasma source with phase control 有权
标题翻译：具有相位控制的电感耦合等离子体源
公开(公告)号：US08933628B2
公开(公告)日：2015-01-13
申请号：US13650835
申请日：2012-10-12
申请人： Applied Materials, Inc.
发明人： Samer Banna , Zhigang Chen , Valentin Todorow
IPC分类号： H01J7/24 , H05H1/46 , C23F1/08 , H01J37/32
CPC分类号： H05H1/46 , C23F1/08 , H01J37/321 , H01J37/3211 , H01J37/32174 , H05H2001/4667
摘要： A plasma processing apparatus may include a process chamber having an interior processing volume; a first RF coil to couple RF energy into the processing volume; a second RF coil to couple RF energy into the processing volume, the second RF coil disposed coaxially with respect to the first RF coil; and a third RF coil to couple RF energy into the processing volume, the third RF coil disposed coaxially with respect to the first RF coil, wherein when RF current flows through the each of the RF coils, either the RF current flows out-of-phase through at least one of the RF coils with respect to at least another of the RF coils, or the phase of the RF current may be selectively controlled to be in-phase or out-of-phase in at least one of the RF coils with respect to at least another of the RF coils.
摘要翻译：等离子体处理装置可以包括具有内部处理量的处理室; 将RF能量耦合到处理量的第一RF线圈; 第二RF线圈，用于将RF能量耦合到所述处理容积中，所述第二RF线圈相对于所述第一RF线圈同轴布置; 以及第三RF线圈，用于将RF能量耦合到所述处理容积中，所述第三RF线圈相对于所述第一RF线圈同轴设置，其中当RF电流流过所述每个所述RF线圈时，所述RF电流流出，相对于至少另一个RF线圈的RF线圈中的至少一个相位，或RF电流的相位可以被选择性地控制为在至少一个RF线圈中是同相或异相相对于至少另一个RF线圈。

7. 发明授权

US10546728B2 Symmetric plasma process chamber 有权
公开(公告)号：US10546728B2
公开(公告)日：2020-01-28
申请号：US15199046
申请日：2016-06-30
申请人： Applied Materials, Inc.
发明人： James D. Carducci , Hamid Tavassoli , Ajit Balakrishna , Zhigang Chen , Andrew Nguyen , Douglas A. Buchberger, Jr. , Kartik Ramaswamy , Shahid Rauf , Kenneth S. Collins
IPC分类号： H01J37/32 , H05H1/46
摘要： Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.

8. 发明授权

US10242847B2 Plasma processing apparatus and liner assembly for tuning electrical skews 有权
公开(公告)号：US10242847B2
公开(公告)日：2019-03-26
申请号：US14738324
申请日：2015-06-12
申请人： Applied Materials, Inc.
发明人： James D. Carducci , Zhigang Chen , Shahid Rauf , Kenneth S. Collins
IPC分类号： H01L21/00 , C23C16/00 , H01J37/32 , H01L21/67
摘要： The invention discloses a plasma processing apparatus comprising a chamber lid, a chamber body and a support assembly. The chamber body, defining a processing volume for containing a plasma, for supporting the chamber lid. The chamber body is comprised of a chamber sidewall, a bottom wall and a liner assembly. The chamber sidewall and the bottom wall define a processing volume for containing a plasma. The liner assembly, disposed inside the processing volume, comprises of three or more slots formed thereon for providing an axial symmetric RF current path. The support assembly supports a substrate for processing within the chamber body. With the liner assembly with several symmetric slots, the present invention can prevent electromagnetic fields thereof from being azimuthal asymmetry.

9. 发明授权

US11587766B2 Symmetric VHF source for a plasma reactor 有权
公开(公告)号：US11587766B2
公开(公告)日：2023-02-21
申请号：US17353668
申请日：2021-06-21
申请人： Applied Materials, Inc.
发明人： Kartik Ramaswamy , Igor Markovsky , Zhigang Chen , James D. Carducci , Kenneth S. Collins , Shahid Rauf , Nipun Misra , Leonid Dorf , Zheng John Ye
IPC分类号： H01L21/00 , C23C16/00 , H01J37/32
摘要： The disclosure pertains to a capacitively coupled plasma source in which VHF power is applied through an impedance-matching coaxial resonator having a symmetrical power distribution.

10. 发明授权

US10573493B2 Inductively coupled plasma apparatus 有权
公开(公告)号：US10573493B2
公开(公告)日：2020-02-25
申请号：US15070847
申请日：2016-03-15
申请人： APPLIED MATERIALS, INC.
发明人： Valentin N. Todorow , Samer Banna , Ankur Agarwal , Zhigang Chen , Tse-Chiang Wang , Andrew Nguyen , Martin Jeff Salinas , Shahid Rauf
IPC分类号： C23C16/00 , H01L21/326 , H01J37/32 , B44C1/22 , C23C16/505
摘要： Methods and apparatus for plasma processing are provided herein. In some embodiments, a plasma processing apparatus includes a process chamber having an interior processing volume; a first RF coil disposed proximate the process chamber to couple RF energy into the processing volume; and a second RF coil disposed proximate the process chamber to couple RF energy into the processing volume, the second RF coil disposed coaxially with respect to the first RF coil, wherein the first and second RF coils are configured such that RF current flowing through the first RF coil is out of phase with RF current flowing through the RF second coil.

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