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1. 发明申请

US20060129874A1 Master controller architecture 失效
标题翻译：主控制器架构
公开(公告)号：US20060129874A1
公开(公告)日：2006-06-15
申请号：US10999720
申请日：2004-11-30
申请人： Alexandre Andreev , Sergey Gribok , Anatoli Bolotov
发明人： Alexandre Andreev , Sergey Gribok , Anatoli Bolotov
IPC分类号： G06F11/00
CPC分类号： G11C29/16 , G11C29/44 , G11C29/4401 , G11C29/72
摘要： A master controller for an RRAM subsystem. An interface communicates with at least one RRAM controller. A main control unit selects and implements test and repair operations on the RRAM subsystem through the RRAM controller. A timer determines a maximum number of test and repair operations that can be implemented within a given time. Thus, a master controller is included in the RRAM subsystem. The master controller has a relatively simple interface, and performs test and repair operations on the RRAM subsystem. The advantages of using the master controller include an elimination of additional test ports, simplification of the process of preparing the test vectors for RRAM testing, and the master controller is able to accumulate test results and initiate repairs based on those results. In this manner, the RRAM subsystem has a self-repair functionality.
摘要翻译：用于RRAM子系统的主控制器。接口与至少一个RRAM控制器通信。主控单元通过RRAM控制器对RRAM子系统进行测试和修复操作。定时器确定在给定时间内可以实现的最大测试和修复操作数。因此，主控制器包含在RRAM子系统中。主控制器具有相对简单的接口，并对RRAM子系统执行测试和修复操作。使用主控制器的优点包括消除额外的测试端口，简化了用于RRAM测试的测试向量的准备过程，并且主控制器能够根据这些结果积累测试结果并启动修复。以这种方式，RRAM子系统具有自修复功能。

2. 发明授权

US07308633B2 Master controller architecture 失效
标题翻译：主控制器架构
公开(公告)号：US07308633B2
公开(公告)日：2007-12-11
申请号：US10999720
申请日：2004-11-30
申请人： Alexandre Andreev , Sergey Gribok , Anatoli Bolotov
发明人： Alexandre Andreev , Sergey Gribok , Anatoli Bolotov
IPC分类号： G01R31/28 , G11C29/00
CPC分类号： G11C29/16 , G11C29/44 , G11C29/4401 , G11C29/72
摘要： A master controller for an RRAM subsystem. An interface communicates with at least one RRAM controller. A main control unit selects and implements test and repair operations on the RRAM subsystem through the RRAM controller. A timer determines a maximum number of test and repair operations that can be implemented within a given time. Thus, a master controller is included in the RRAM subsystem. The master controller has a relatively simple interface, and performs test and repair operations on the RRAM subsystem. The advantages of using the master controller include an elimination of additional test ports, simplification of the process of preparing the test vectors for RRAM testing, and the master controller is able to accumulate test results and initiate repairs based on those results. In this manner, the RRAM subsystem has a self-repair functionality.
摘要翻译：用于RRAM子系统的主控制器。接口与至少一个RRAM控制器通信。主控单元通过RRAM控制器对RRAM子系统进行测试和修复操作。定时器确定在给定时间内可以实现的最大测试和修复操作数。因此，主控制器包含在RRAM子系统中。主控制器具有相对简单的接口，并对RRAM子系统执行测试和修复操作。使用主控制器的优点包括消除额外的测试端口，简化了用于RRAM测试的测试向量的准备过程，并且主控制器能够根据这些结果积累测试结果并启动修复。以这种方式，RRAM子系统具有自修复功能。

3. 发明申请

US20060161803A1 Memory BISR architecture for a slice 有权
标题翻译：内存BISR架构为一片
公开(公告)号：US20060161803A1
公开(公告)日：2006-07-20
申请号：US11038698
申请日：2005-01-20
申请人： Alexander Andreev , Sergey Gribok , Anatoli Bolotov
发明人： Alexander Andreev , Sergey Gribok , Anatoli Bolotov
IPC分类号： G06F11/00
CPC分类号： G11C29/44 , G11C29/4401 , G11C29/72
摘要： The present invention provides a memory BISR architecture for a slice. The architecture includes (1) a plurality of physical memory instances; (2) a Mem_BIST controller, communicatively coupled to the plurality of physical memory instances, for testing the plurality of physical memory instances; (3) a FLARE module, communicatively coupled to the Mem_BIST controller, including a scan chain of registers for storing test results of the plurality of physical memory instances, each of the plurality of physical memory instances M_i being assigned one FLARE bit f_i, i=1, 2, . . . , n, the FLARE module being used by the Mem_BIST controller to scan in an error vector F=(f—1, f—2, . . . , f_n); (4) a BISR controller, communicatively coupled to the FLARE module, a ROM module and a REPAIR_CONFIGURATION module, for scanning out the error vector F from the FLARE module to computer a repair configuration vector R=(r—1, r—2, . . . , r_n); and (5) a FUSE module, communicatively coupled to the BISR controller and the REPAIR_CONFIGURATION module, for storing the repair configuration vector R. The REPAIR_CONFIGURATION module, communicatively coupled to the plurality of physical memory instances M_i and an integrated circuit design D, includes switch module instances S for switching among the plurality of physical memory instances in accordance with the repair configuration vector R. The ROM module stores a vector U indicating usage of the plurality of physical memory instances M_i by the integrated circuit design D.
摘要翻译：本发明提供了一种用于切片的存储器BISR架构。该架构包括（1）多个物理存储器实例; （2）通信地耦合到所述多个物理存储器实例的用于测试所述多个物理存储器实例的Mem_BIST控制器; （3）FLARE模块，通信地耦合到所述Mem_BIST控制器，包括用于存储所述多个物理存储器实例的测试结果的寄存器扫描链，所述多个物理存储器实例M_i中的每一个被分配一个FLARE位f_i，i = 1，2，... 。。，n，由Mem_BIST控制器使用的FLARE模块以错误向量F =（f 1 - 1，f 2 - ，...，f_n）进行扫描; （4）通信地耦合到FLARE模块的BISR控制器，ROM模块和REPAIR_CONFIGURATION模块，用于从FLARE模块向计算机扫描出错误向量F，修复配置向量R =（r - > 1，r 2，...，r_n）; 和（5）通信地耦合到BISR控制器和REPAIR_CONFIGURATION模块的FUSE模块，用于存储修复配置向量R.通信地耦合到多个物理存储器实例M_i和集成电路设计D的REPAIR_CONFIGURATION模块包括开关模块实例S，用于根据修复配置向量R在多个物理存储器实例之间切换.ROM模块通过集成电路设计D存储指示多个物理存储器实例M_i的使用的向量U。

4. 发明申请

US20060161804A1 Memory BISR controller architecture 失效
标题翻译：内存BISR控制器架构
公开(公告)号：US20060161804A1
公开(公告)日：2006-07-20
申请号：US11270077
申请日：2005-11-09
申请人： Alexander Andreev , Sergey Gribok , Anatoli Bolotov
发明人： Alexander Andreev , Sergey Gribok , Anatoli Bolotov
IPC分类号： G06F11/00
CPC分类号： G11C29/44 , G06F11/00 , G11C29/4401 , G11C29/72
摘要： The present invention provides an architecture of a memory Built-In Self Repair (BISR) controller for connecting to N memory instances, where N is a positive integer greater than 1. The architecture includes N groups of data ports, N BISR_SUBMOD modules for connecting to the N memory instances, and a CLK_IN input port and a BISR_IN input port for setting configuration of the memory BISR controller. Each of the N groups of data ports includes (1) a PHY_IN output port for connecting to input of a corresponding memory instance; (2) a PHY_OUT input port for connecting to output of the corresponding memory instance; (3) a LOG_IN input port for sending signals to the corresponding memory instance; and (4) a LOG_OUT output port for receiving signals from the corresponding memory instance. Each of the N BISR_SUBMOD modules includes a flip-flop, a first mux and a second mux. The CLK_IN input port is connected to clock inputs of all N flip-flops of the memory BISR controller. The BISR_IN input port is connected to data input of a first flip-flop, and output of a K-th flip-flop is connected to input of a (K+1)-th flip-flop, K=1, 2, . . . , N-1. When at least one of the N memory instances is defective, the memory BISR controller may reconfigure connections among the N memory instances to use other memory instance(s) instead of the defective memory instance(s).
摘要翻译：本发明提供了一种用于连接到N个存储器实例的存储器内置自修复（BISR）控制器的架构，其中N是大于1的正整数。该架构包括N组数据端口，N个BISR_SUBMOD模块用于连接到 N个内存实例，以及用于设置内存BISR控制器配置的CLK_IN输入端口和BISR_IN输入端口。 N组数据端口中的每一个包括（1）用于连接到相应存储器实例的输入的PHY_IN输出端口; （2）用于连接到相应存储器实例的输出的PHY_OUT输入端口; （3）用于向相应的存储器实例发送信号的LOG_IN输入端口; 和（4）用于从相应的存储器实例接收信号的LOG_OUT输出端口。 N BISR_SUBMOD模块中的每一个包括触发器，第一多路复用器和第二复用器。 CLK_IN输入端口连接到存储器BISR控制器的所有N个触发器的时钟输入。 BISR_IN输入端口连接到第一触发器的数据输入，第K触发器的输出连接到第（K + 1）个触发器的输入，K = 1,2。。。，N-1。当N个存储器实例中的至少一个存在缺陷时，存储器BISR控制器可以重新配置N个存储器实例之间的连接以使用其他存储器实例而不是缺陷存储器实例。

5. 发明申请

US20060136775A1 RRAM communication system 失效
标题翻译： RRAM通信系统
公开(公告)号：US20060136775A1
公开(公告)日：2006-06-22
申请号：US10999481
申请日：2004-11-30
申请人： Alexander Andreev , Sergey Gribok , Anatoli Bolotov
发明人： Alexander Andreev , Sergey Gribok , Anatoli Bolotov
IPC分类号： G06F11/00
CPC分类号： G11C29/16 , G11C29/4401 , G11C29/56004 , G11C2029/3602 , G11C2029/5602
摘要： The present invention provides a RRAM communication system including at least one RRAM controller and a master controller. The master controller is communicatively coupled to each of at least one RRAM controller. The master controller is suitable for loading test input parameters into at least one RRAM controller, starting execution of a test and obtaining a result of test execution from at least one RRAM controller. Each of at least one RRAM controller is suitable for executing different tests depending on commands received from the master controller.
摘要翻译：本发明提供一种包括至少一个RRAM控制器和主控制器的RRAM通信系统。主控制器通信地耦合到至少一个RRAM控制器中的每一个。主控制器适用于将测试输入参数加载到至少一个RRAM控制器中，开始执行测试并从至少一个RRAM控制器获得测试执行结果。至少一个RRAM控制器中的每一个适合于根据从主控制器接收到的命令执行不同的测试。

6. 发明授权

US08156391B2 Data controlling in the MBIST chain architecture 失效
标题翻译： MBIST链架构中的数据控制
公开(公告)号：US08156391B2
公开(公告)日：2012-04-10
申请号：US12167305
申请日：2008-07-03
申请人： Alexandre Andreev , Anatoli Bolotov , Mikhail Grinchuk
发明人： Alexandre Andreev , Anatoli Bolotov , Mikhail Grinchuk
IPC分类号： G11C29/14 , G11C29/50
CPC分类号： G11C29/32 , G11C8/16 , G11C2029/3202
摘要： A memory collar including a first circuit and a second circuit. The first circuit may be configured to generate one or more data sequences in response to one or more test commands. The one or more data sequences may be presented to a memory during a test mode. The second circuit may be configured to pre-process one or more outputs generated by the memory in response to the one or more data sequences.
摘要翻译：一种包括第一电路和第二电路的存储器环。第一电路可以被配置为响应于一个或多个测试命令而生成一个或多个数据序列。在测试模式期间，可以将一个或多个数据序列呈现给存储器。第二电路可以被配置为响应于一个或多个数据序列预处理由存储器产生的一个或多个输出。

7. 发明申请

US20090300441A1 ADDRESS CONTROLLING IN THE MBIST CHAIN ARCHITECTURE 有权
标题翻译：地址控制在MBIST链建筑
公开(公告)号：US20090300441A1
公开(公告)日：2009-12-03
申请号：US12183562
申请日：2008-07-31
申请人： Alexandre Andreev , Anatoli Bolotov , Mikhail Grinchuk
发明人： Alexandre Andreev , Anatoli Bolotov , Mikhail Grinchuk
IPC分类号： G11C29/12 , G06F11/27
CPC分类号： G11C29/32 , G11C8/16 , G11C2029/3202
摘要： A memory collar includes a first circuit, a second circuit and a third circuit. The first circuit may be configured to generate a first control signal, a second control signal and a third control signal in response to one or more test commands. The second circuit may be configured to generate a fourth control signal in response to said third control signal and the fourth control signal. The third circuit may be configured to generate one or more address sequences. The one or more address sequences are presented to a memory during a test mode.
摘要翻译：存储器环包括第一电路，第二电路和第三电路。第一电路可以被配置为响应于一个或多个测试命令产生第一控制信号，第二控制信号和第三控制信号。第二电路可以被配置为响应于所述第三控制信号和第四控制信号而产生第四控制信号。第三电路可以被配置为生成一个或多个地址序列。在测试模式期间将一个或多个地址序列呈现给存储器。

8. 发明授权

US07949909B2 Address controlling in the MBIST chain architecture 有权
标题翻译：地址控制在MBIST链架构
公开(公告)号：US07949909B2
公开(公告)日：2011-05-24
申请号：US12183562
申请日：2008-07-31
申请人： Alexandre Andreev , Anatoli Bolotov , Mikhail Grinchuk
发明人： Alexandre Andreev , Anatoli Bolotov , Mikhail Grinchuk
IPC分类号： G11C29/00 , G01R31/28
CPC分类号： G11C29/32 , G11C8/16 , G11C2029/3202
摘要： A memory collar includes a first circuit, a second circuit and a third circuit. The first circuit may be configured to generate a first control signal, a second control signal and a third control signal in response to one or more test commands. The second circuit may be configured to generate a fourth control signal in response to said third control signal and the fourth control signal. The third circuit may be configured to generate one or more address sequences. The one or more address sequences are presented to a memory during a test mode.
摘要翻译：存储器环包括第一电路，第二电路和第三电路。第一电路可以被配置为响应于一个或多个测试命令产生第一控制信号，第二控制信号和第三控制信号。第二电路可以被配置为响应于所述第三控制信号和第四控制信号而产生第四控制信号。第三电路可以被配置为生成一个或多个地址序列。在测试模式期间将一个或多个地址序列呈现给存储器。

9. 发明申请

US20090307543A1 TRANSPORT SUBSYSTEM FOR AN MBIST CHAIN ARCHITECTURE 失效
标题翻译：用于MBIST链架构的运输子系统
公开(公告)号：US20090307543A1
公开(公告)日：2009-12-10
申请号：US12183512
申请日：2008-07-31
申请人： Alexandre Andreev , Anatoli Bolotov , Mikhail Grinchuk
发明人： Alexandre Andreev , Anatoli Bolotov , Mikhail Grinchuk
IPC分类号： G11C29/12 , G06F11/27
CPC分类号： G11C29/48 , G11C29/1201 , G11C29/26 , G11C29/32 , G11C2029/2602 , G11C2029/5602
摘要： An apparatus comprising a controller, a plurality of transport circuits and a plurality of memory-controlling circuits. The controller may be configured to (i) present one or more commands and (ii) receive one or more responses. Each of the plurality of transport circuits may be configured to (i) receive one of the commands, (ii) present the responses, and (iii) generate one or more control signals. Each of the plurality of memory-controlling circuits may be (i) coupled to a respective one of the plurality of transport circuits and (ii) configured to (i) generate one or more memory access signals in response to the one or more control signals, (ii) receive one or more memory output signals from a respective memory in response to the one or more memory access signals and (iii) generate the responses in response to the one or more memory output signals. Each respective memory may be independently sized. The controller generally provides a common testing routine for each respective memory that may be adjusted for the size of each respective memory by the memory-controlling circuits.
摘要翻译：一种装置，包括控制器，多个传输电路和多个存储器控制电路。控制器可以被配置为（i）呈现一个或多个命令，并且（ii）接收一个或多个响应。多个传输电路中的每一个可以被配置为（i）接收命令之一，（ii）呈现响应，以及（iii）产生一个或多个控制信号。多个存储器控制电路中的每一个可以（i）耦合到多个传输电路中的相应一个，并且（ii）被配置为（i）响应于一个或多个控制信号而产生一个或多个存储器访问信号，（ii）响应于所述一个或多个存储器访问信号，从相应存储器接收一个或多个存储器输出信号，以及（iii）响应于所述一个或多个存储器输出信号产生响应。各个存储器可以独立地定尺寸。控制器通常为每个相应的存储器提供通用的测试程序，这些存储器可以通过存储器控制电路为每个相应的存储器的大小进行调整。

10. 发明申请

US20090300440A1 DATA CONTROLLING IN THE MBIST CHAIN ARCHITECTURE 失效
标题翻译：在MBIST链架构中的数据控制
公开(公告)号：US20090300440A1
公开(公告)日：2009-12-03
申请号：US12167305
申请日：2008-07-03
申请人： Alexandre Andreev , Anatoli Bolotov , Mikhail Grinchuk
发明人： Alexandre Andreev , Anatoli Bolotov , Mikhail Grinchuk
IPC分类号： G11C29/04 , G06F11/27
CPC分类号： G11C29/32 , G11C8/16 , G11C2029/3202
摘要： A memory collar including a first circuit and a second circuit. The first circuit may be configured to generate one or more data sequences in response to one or more test commands. The one or more data sequences may be presented to a memory during a test mode. The second circuit may be configured to pre-process one or more outputs generated by the memory in response to the one or more data sequences.
摘要翻译：一种包括第一电路和第二电路的存储器环。第一电路可以被配置为响应于一个或多个测试命令而生成一个或多个数据序列。在测试模式期间，可以将一个或多个数据序列呈现给存储器。第二电路可以被配置为响应于一个或多个数据序列预处理由存储器产生的一个或多个输出。

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