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1. 发明申请

US20120287958A1 Laser Diode Assembly and Method for Producing a Laser Diode Assembly 审中-公开
标题翻译：激光二极管组件及其制造方法
公开(公告)号：US20120287958A1
公开(公告)日：2012-11-15
申请号：US13515226
申请日：2010-11-11
申请人： Alfred Lell , Martin Strassburg
发明人： Alfred Lell , Martin Strassburg
IPC分类号： H01S5/22 , H01L33/08
CPC分类号： H01S5/4043 , H01S5/2068 , H01S5/22 , H01S5/227 , H01S5/3063 , H01S5/3095 , H01S5/32341 , H01S5/405 , H01S5/4087
摘要： A laser diode assembly comprising a semiconductor substrate; (2; 101; 201; 301; 72), at least two laser stacks (17, 18; 117, 118, 119; 217, 218; 317, 318; 97, 98, 99), each having one active zone; (6, 12; 105, 109, 113; 207, 213; 307, 311; 76, 82, 88), and at least one translucent ohmic contact (9; 107, 111; 204, 210; 304, 309; 79, 85), wherein the laser stacks (17, 18; 117, 118, 119; 217, 218; 317, 318; 97, 98, 99) and the translucent ohmic contact (9; 107, 111; 204, 210; 304, 309; 79, 85) are monolithically deposited on the semiconductor substrate (2; 101; 201; 301; 72), wherein the laser stacks (17, 18; 117, 118, 119; 217, 218; 317, 318; 97, 98, 99) are electrically connected by the translucent ohmic contact (9; 107, 111; 204, 210; 304, 309; 79, 85), and wherein laser diodes (26a, 26b, 27a, 27b; 36a, 36b, 37a, 37b; 46a, 46b, 47a, 47b; 66a, 66b, 67a, 67b; 94a, 94b, 95a, 95b, 96a, 96b) that are formed from the laser stacks (17, 18; 117, 118, 119; 217, 218; 317, 318; 97, 98, 99) form a two-dimensional structure.
摘要翻译：一种激光二极管组件，包括半导体衬底; （2; 101; 201; 301; 72），至少两个激光堆叠（17,18; 117,118,119; 217,218; 317,318; 97,98,99），每个具有一个活动区域; （6; 12; 105,109,113; 207,213; 307,311; 76,82,88）和至少一个半透明欧姆接触件（9; 107,111; 204,210; 304,309; 85），其中所述激光器叠层（17,18; 117,118,119; 217,218; 317,318; 97,98,99）和所述半透明欧姆接触件（9; 107,111; 204,210; 304，在所述半导体衬底（2; 101; 201; 301; 72）上整体沉积所述激光器叠层（17,18; 117,118,119; 217,218; 317,318; （9; 107,111; 204,210; 304,309; 79,85）电连接激光二极管（26a，26b，27a，27b; 36a，36b，37a），由激光堆（17,18; 117,118,119; 217）形成的，37b; 46a，46b，47a，47b; 66a，66b，67a，67b; 94a，94b，95a，95b，96a，96b），218; 317,318; 97,98,99）形成二维结构。

2. 发明授权

US09130353B2 Laser diode assembly and method for producing a laser diode assembly 有权
标题翻译：激光二极管组件及其制造方法
公开(公告)号：US09130353B2
公开(公告)日：2015-09-08
申请号：US13635594
申请日：2011-01-31
申请人： Alfred Lell , Martin Strassburg
发明人： Alfred Lell , Martin Strassburg
IPC分类号： H01L21/00 , H01S5/40 , H01S5/022 , H01S5/042 , H01S5/20 , H01S5/30 , H01S5/323
CPC分类号： H01S5/4043 , H01S5/0224 , H01S5/026 , H01S5/0425 , H01S5/2059 , H01S5/3013 , H01S5/3095 , H01S5/323 , H01S5/32341 , H01S5/34313 , H01S5/405 , H01S5/4087 , H01S5/4093 , H01S2301/173
摘要： A laser diode arrangement having at least one semiconductor substrate, having at least two laser stacks each having an active zone and having at least one intermediate layer. The laser stacks and the intermediate layer are grown monolithically on the semiconductor substrate. The intermediate layer is arranged between the laser stacks. The active zone of the first laser stack can be actuated separately from the active zone of the at least one further laser stack.
摘要翻译：一种具有至少一个半导体衬底的激光二极管装置，具有至少两个激光器堆叠，每个激光器堆叠具有活性区并具有至少一个中间层。激光器堆叠和中间层在半导体衬底上单片生长。中间层布置在激光堆之间。第一激光器堆叠的活动区域可以与至少一个另外的激光堆叠的活动区分开地被致动。

3. 发明授权

US08362506B2 Optoelectronic semiconductor body 有权
标题翻译：光电半导体体
公开(公告)号：US08362506B2
公开(公告)日：2013-01-29
申请号：US12678259
申请日：2008-08-27
申请人： Patrick Rode , Karl Engl , Martin Strassburg , Lutz Hoeppel , Matthias Sabathil
发明人： Patrick Rode , Karl Engl , Martin Strassburg , Lutz Hoeppel , Matthias Sabathil
IPC分类号： H01L33/12 , H01L33/30
CPC分类号： H01L33/405 , H01L33/007 , H01L33/40 , H01L33/58 , H01L2933/0091
摘要： An optoelectronic semiconductor body includes a substrate with a front side for emitting electromagnetic radiation. The optoelectronic semiconductor body has a semiconductor layer sequence that is arranged on a rear side of the substrate and has an active layer suitable for generating the electromagnetic radiation. The optoelectronic semiconductor body also includes first and second electrical connection layers that are arranged on a first surface of the semiconductor body that faces away from the substrate.
摘要翻译：光电子半导体本体包括具有用于发射电磁辐射的前侧的衬底。光电半导体本体具有布置在衬底的后侧上的半导体层序列，并且具有适于产生电磁辐射的有源层。光电子半导体本体还包括布置在半导体本体的远离衬底的第一表面上的第一和第二电连接层。

4. 发明授权

US08907359B2 Optoelectronic semiconductor component 有权
标题翻译：光电半导体元件
公开(公告)号：US08907359B2
公开(公告)日：2014-12-09
申请号：US13124707
申请日：2009-09-16
申请人： Martin Strassburg , Lutz Höppel , Matthias Peter , Ulrich Zehnder , Tetsuya Taki , Andreas Leber , Rainer Butendeich , Thomas Bauer
发明人： Martin Strassburg , Lutz Höppel , Matthias Peter , Ulrich Zehnder , Tetsuya Taki , Andreas Leber , Rainer Butendeich , Thomas Bauer
IPC分类号： H01L33/60 , H01L33/40
CPC分类号： H01L33/40 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semiconductor component comprising a semiconductor layer sequence (3) based on a nitride compound semiconductor and containing an n-doped region (4), a p-doped region (8) and an active zone (5) arranged between the n-doped region (4) and the p-doped region (8) is specified. The p-doped region (8) comprises a p-type contact layer (7) composed of InxAlyGa1-x-yN where 0≦x≦1, 0≦y≦1 and x+y≦1. The p-type contact layer (7) adjoins a connection layer (9) composed of a metal, a metal alloy or a transparent conductive oxide, wherein the p-type contact layer (7) has first domains (1) having a Ga-face orientation and second domains (2) having an N-face orientation at an interface with the connection layer (9).
摘要翻译：一种光电子半导体部件，包括基于氮化物化合物半导体的半导体层序列（3），并且包含n掺杂区域（4），p掺杂区域（8）和有源区域（5）区域（4）和p掺杂区域（8）。 p掺杂区域（8）包括由In x Al y Ga 1-x-y N组成的p型接触层（7），其中0和nlE; x和nlE; 1,0和nlE; y和nlE; 1和x + y和nlE; 1。 p型接触层（7）与由金属，金属合金或透明导电氧化物构成的连接层（9）相邻，其中p型接触层（7）具有第一畴（1）面取向和在与连接层（9）的界面处具有N面取向的第二域（2）。

5. 发明授权

US08643034B2 Monolithic, optoelectronic semiconductor body and method for the production thereof 有权
标题翻译：单片，光电子半导体器件及其制造方法
公开(公告)号：US08643034B2
公开(公告)日：2014-02-04
申请号：US12920317
申请日：2009-02-25
申请人： Karl Engl , Frank Singer , Patrick Rode , Lutz Hoeppel , Martin Strassburg
发明人： Karl Engl , Frank Singer , Patrick Rode , Lutz Hoeppel , Martin Strassburg
IPC分类号： H01L29/207
CPC分类号： H01L27/156 , H01L33/08 , H01L33/382 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semiconductor body comprises a semiconductor layer sequence which is subdivided into at least two electrically isolated subsegments. The semiconductor layer sequence has an active layer in each subarea. Furthermore, at least three electrical contact pads are provided. A first line level makes contact with a first of the at least two subsegments and with the first contact pad. A second line level makes contact with the second of the at least two subsegments and with a second contact pad. A third line level connects the two subsegments to one another and makes contact with the third contact pad. Furthermore, the line levels are each arranged opposite a first main face, wherein the first main face is intended to emit electromagnetic radiation that is produced.
摘要翻译：光电半导体主体包括半导体层序列，其被细分为至少两个电隔离的子区段。半导体层序列在每个子区域中具有活性层。此外，提供至少三个电接触垫。第一线路级别与至少两个子片段中的第一个以及与第一接触焊盘接触。第二线路级别与至少两个子段中的第二线路接触并且与第二接触焊盘接触。第三线路电平将两个子段彼此连接并与第三接触焊盘接触。此外，线路电平各自布置成与第一主面对置，其中第一主面面用于发射产生的电磁辐射。

6. 发明授权

US08314415B2 Radiation-emitting semiconductor body 有权
标题翻译：辐射发射半导体体
公开(公告)号：US08314415B2
公开(公告)日：2012-11-20
申请号：US12668386
申请日：2008-06-20
申请人： Martin Strassburg , Lutz Hoeppel , Matthias Sabathil , Matthias Peter , Uwe Strauss
发明人： Martin Strassburg , Lutz Hoeppel , Matthias Sabathil , Matthias Peter , Uwe Strauss
IPC分类号： H01L33/06 , H01L29/15
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/04 , H01L33/06 , H01S5/3095 , H01S5/34333
摘要： A radiation-emitting semiconductor body includes a contact layer and an active zone. The semiconductor body has a tunnel junction arranged between the contact layer and the active zone. The active zone has a multi-quantum well structure containing at least two active layers that emit electromagnetic radiation when an operating current is impressed into the semiconductor body.
摘要翻译：辐射发射半导体本体包括接触层和有源区。半导体本体具有布置在接触层和有源区之间的隧道结。有源区具有包含至少两个有源层的多量子阱结构，当工作电流被施加到半导体本体中时，其发射电磁辐射。

7. 发明申请

US20120086026A1 Optoelectronic Semiconductor Body and Method for the Production Thereof 有权
标题翻译：光电半导体及其制造方法
公开(公告)号：US20120086026A1
公开(公告)日：2012-04-12
申请号：US12920313
申请日：2009-02-25
申请人： Karl Engl , Patrick Rode , Lutz Hoeppel , Martin Strassburg
发明人： Karl Engl , Patrick Rode , Lutz Hoeppel , Martin Strassburg
IPC分类号： H01L33/08
CPC分类号： H01L27/156 , H01L25/0753 , H01L33/0079 , H01L33/382 , H01L33/62 , H01L2224/48091 , H01L2924/00014
摘要： An optoelectronic semiconductor body comprises a substantially planar semiconductor layer sequence having a first and a second main side, which has an active layer suitable for generating electromagnetic radiation. Furthermore, the semiconductor body comprises at least one trench that severs the active layer of the semiconductor layer sequence and serves for subdividing the active of the semiconductor layer sequence into at least two electrically insulated active partial layers. A first and second connection layer arranged on a second main side serve for making contact with the active partial layers. In this case, the first and second connection layers for making contact with the at least two active partial layers are electrically conductively connected to one another in such a way that the active partial layers form a series circuit.
摘要翻译：光电子半导体本体包括具有第一和第二主侧的基本上平面的半导体层序列，其具有适于产生电磁辐射的有源层。此外，半导体本体包括至少一个沟槽，其切断半导体层序列的有源层并且用于将半导体层序列的有源分为至少两个电绝缘的有源部分层。布置在第二主侧上的第一和第二连接层用于与活性部分层接触。在这种情况下，用于与至少两个有源部分层接触的第一和第二连接层彼此导电连接，使得有源部分层形成串联电路。

8. 发明申请

US20110215295A1 METHOD OF PRODUCING A RADIATION-EMITTING THIN FILM COMPONENT AND RADIATION-EMITTING THIN FILM COMPONENT 有权
标题翻译：生产辐射发射薄膜组件和辐射发射薄膜组件的方法
公开(公告)号：US20110215295A1
公开(公告)日：2011-09-08
申请号：US13123410
申请日：2009-10-19
申请人： Hans-Jurgen Lugauer , Klaus Streubel , Martin Strassburg , Reiner Windisch , Karl Engl
发明人： Hans-Jurgen Lugauer , Klaus Streubel , Martin Strassburg , Reiner Windisch , Karl Engl
IPC分类号： H01L33/06 , H01L33/30
CPC分类号： H01L33/22 , B82Y20/00 , H01L33/0079 , H01L33/32 , H01L33/44
摘要： A method of producing a radiation-emitting thin film component includes providing a substrate, growing nanorods on the substrate, growing a semiconductor layer sequence with at least one active layer epitaxially on the nanorods, applying a carrier to the semiconductor layer sequence, and detaching the semiconductor layer sequence and the carrier from the substrate by at least partial destruction of the nanorods.
摘要翻译：一种制造辐射发射薄膜部件的方法包括提供衬底，在衬底上生长纳米棒，在纳米棒上外延生长具有至少一个活性层的半导体层序列，向半导体层序列施加载体，并将半导体层序列和载体通过纳米棒的至少部分破坏从衬底。

9. 发明申请

US20080073655A1 Optoelectronic semiconductor chip 审中-公开
标题翻译：光电半导体芯片
公开(公告)号：US20080073655A1
公开(公告)日：2008-03-27
申请号：US11901666
申请日：2007-09-17
申请人： Tony Albrecht , Georg Bruderl , Volker Harle , Lutz Hoppel , Martin Strassburg
发明人： Tony Albrecht , Georg Bruderl , Volker Harle , Lutz Hoppel , Martin Strassburg
IPC分类号： H01L31/0236 , H01L33/00
CPC分类号： H01L33/24 , H01L21/02389 , H01L21/0254 , H01L21/02658 , H01L31/02363 , H01L33/007 , H01L2924/0002 , H01S5/1231 , Y02E10/50 , H01L2924/00
摘要： An optoelectronic semiconductor chip comprises a growth substrate with a structured growth area (2) having a multiplicity of elevations (4) and depressions (3), and an active layer sequence (5) applied to the growth area (2).
摘要翻译：光电子半导体芯片包括具有多个高度（4）和凹陷（3）的结构化生长区域（2）的生长衬底和应用于生长区域（2）的活性层序列（5）。

10. 发明授权

US09059353B2 Optoelectronic component 有权
标题翻译：光电元件
公开(公告)号：US09059353B2
公开(公告)日：2015-06-16
申请号：US14240433
申请日：2012-08-30
申请人： Simeon Katz , Bastian Galler , Martin Strassburg , Matthias Sabathil , Philipp Drechsel , Werner Bergbauer , Martin Mandl
发明人： Simeon Katz , Bastian Galler , Martin Strassburg , Matthias Sabathil , Philipp Drechsel , Werner Bergbauer , Martin Mandl
IPC分类号： H01L33/06 , H01L33/08 , H01L33/42 , H01L33/24 , H01S5/343
CPC分类号： H01L33/06 , H01L33/08 , H01L33/24 , H01L33/42 , H01S5/34333
摘要： An optoelectronic device having an active layer that includes a multiplicity of structural elements spaced apart from one another laterally, wherein the structural elements each have a quantum well structure including at least one barrier layer composed of Inx1Aly1Ga1-x1-y1N, wherein 0≦x1≦1, 0≦y1≦1 and x1+y1≦1, and at least one quantum well layer composed of Inx2Aly2Ga1-x2-y2N, wherein 0≦x2≦1, 0≦y2≦1 and x2+y2≦1.
摘要翻译：一种具有活性层的光电子器件，该有源层包括多个相互间隔开的结构元件，其中所述结构元件各自具有包括至少一个由In x Al 1 Al 1 Ga 1-x 1-y 1 N构成的势垒层的量子阱结构，其中0＆nlE; x1＆nlE; 1，0＆nlE; y1＆nlE; 1和x1 + y1＆nlE; 1以及由Inx2Aly2Ga1-x2-y2N组成的至少一个量子阱层，其中0＆nlE; x2＆nlE; 1,0＆lt; 1; y2＆nlE; 1和x2 + y2＆

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