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1. 发明授权

US09997892B2 Passivation of VCSEL sidewalls 有权
公开(公告)号：US09997892B2
公开(公告)日：2018-06-12
申请号：US14467439
申请日：2014-08-25
申请人： FINISAR CORPORATION
发明人： Ralph H. Johnson
IPC分类号： H01S5/183 , H01S5/024 , H01L33/44 , H01S5/028 , H01L33/10 , H01S5/042 , H01S5/20 , H01S5/30
CPC分类号： H01S5/18311 , H01L33/105 , H01L33/44 , H01S5/024 , H01S5/0282 , H01S5/0422 , H01S5/0425 , H01S5/18341 , H01S5/18358 , H01S5/2009 , H01S5/305 , H01S5/3054 , H01S5/3081 , H01S5/3095 , H01S2301/176
摘要： A semiconductor structure configured for use in a VCSEL or RCLED. The semiconductor structure includes an oxidizing layer constructed from materials that can be oxidized during a lithographic process so as to create an oxide aperture. The semiconductor structure further includes a number of layers near the oxidizing layer. A passivation material is disposed on the layers near the oxidizing layer. The passivation material is configured to inhibit oxidation of the layers.

2. 发明申请

US20170373469A1 WIDELY TUNABLE SWEPT SOURCE 审中-公开
公开(公告)号：US20170373469A1
公开(公告)日：2017-12-28
申请号：US15683435
申请日：2017-08-22
申请人： Praevium Research, Inc. , Thorlabs, Inc.
发明人： Vijaysekhar Jayaraman , Christopher Burgner , Demis John , Peter Heim , Alex Ezra Cable
IPC分类号： H01S5/183 , H01S5/20 , H01S5/30
CPC分类号： H01S5/18366 , A61B5/0059 , G01B9/02091 , H01S5/18308 , H01S5/18311 , H01S5/18341 , H01S5/18369 , H01S5/18372 , H01S5/18377 , H01S5/2059 , H01S5/3095
摘要： A high-speed, single-mode, high power, reliable and manufacturable wavelength-tunable light source operative to emit wavelength tunable radiation over a wavelength range contained in a wavelength span between about 950 nm and about 1150 nm, including a vertical cavity laser (VCL), the VCL having a gain region with at least one compressively strained quantum well containing Indium, Gallium, and Arsenic.

3. 发明申请

US20160365704A1 PASSIVATION OF VCSEL SIDEWALLS 有权
标题翻译： VCSEL SIDEWALLS的钝化
公开(公告)号：US20160365704A1
公开(公告)日：2016-12-15
申请号：US14467439
申请日：2014-08-25
申请人： FINISAR CORPORATION
发明人： Ralph H. Johnson
IPC分类号： H01S5/183 , H01S5/024 , H01S5/028
CPC分类号： H01S5/18311 , H01L33/105 , H01L33/44 , H01S5/024 , H01S5/0282 , H01S5/0422 , H01S5/0425 , H01S5/18341 , H01S5/18358 , H01S5/2009 , H01S5/305 , H01S5/3054 , H01S5/3081 , H01S5/3095 , H01S2301/176
摘要： A semiconductor structure configured for use in a VCSEL or RCLED. The semiconductor structure includes an oxidizing layer constructed from materials that can be oxidized during a lithographic process so as to create an oxide aperture. The semiconductor structure further includes a number of layers near the oxidizing layer. A passivation material is disposed on the layers near the oxidizing layer. The passivation material is configured to inhibit oxidation of the layers.
摘要翻译：配置用于VCSEL或RCLED的半导体结构。半导体结构包括由在光刻过程中可被氧化以产生氧化物孔的材料构成的氧化层。半导体结构还包括靠近氧化层的多个层。钝化材料设置在氧化层附近的层上。钝化材料被配置为抑制层的氧化。

4. 发明申请

US20160211645A1 SEMICONDUCTOR LASER APPARATUS AND MANUFACTRUING METHOD THEREOF 有权
标题翻译：半导体激光装置及其制造方法
公开(公告)号：US20160211645A1
公开(公告)日：2016-07-21
申请号：US14600443
申请日：2015-01-20
申请人： SAE Magnetics (H.K.) Ltd.
发明人： Babu Dayal PADULLAPARTHI
IPC分类号： H01S5/022 , G02B6/136 , H01S5/125 , H01S5/02 , H01S5/34 , H01S5/12 , G02B6/42 , G02B6/122
CPC分类号： H01S5/1228 , G02B6/4206 , H01S5/021 , H01S5/02256 , H01S5/02284 , H01S5/02461 , H01S5/026 , H01S5/1032 , H01S5/1203 , H01S5/125 , H01S5/3095
摘要： A semiconductor laser apparatus includes a silicon-on-insulator assembly and an edge-emitting semiconductor laser assembly integrated on the silicon-on-insulator assembly. The silicon-on-insulator assembly includes an optical waveguide at the top which is bonded to the edge-emitting semiconductor laser assembly and configured to couple a laser light emitted from the edge-emitting semiconductor laser assembly, and the optical waveguide includes a core portion located in the middle of the optical waveguide; and at least one vertical rib configured on two sides of the core portion respectively, with a width narrower than that of the core portion. The apparatus obtains a single mode laser operation and has low propagation loss and high mechanical bond strength.
摘要翻译：半导体激光装置包括绝缘体上硅组件和集成在绝缘体上硅组件上的边缘发射半导体激光组件。绝缘体上硅组件包括在顶部的光波导，其结合到边缘发射半导体激光器组件并且被配置为耦合从边缘发射半导体激光器组件发射的激光，并且光波导包括芯部分位于光波导的中间; 以及分别配置在所述芯部的两侧上的至少一个纵向肋，其宽度比所述芯部的宽度窄。该装置获得单模激光操作，传播损耗小，机械结合强度高。

5. 发明申请

US20160204306A1 HYBRID HETEROSTRUCTURE LIGHT EMITTING DEVICES 有权
标题翻译：混合式结构发光装置
公开(公告)号：US20160204306A1
公开(公告)日：2016-07-14
申请号：US14506975
申请日：2014-10-06
申请人： Wisconsin Alumni Research Foundation
发明人： Zhenqiang Ma , Jung-Hun Seo
IPC分类号： H01L33/06 , H01L33/32 , H01L33/34 , H01L33/00
CPC分类号： H01L33/06 , H01L21/283 , H01L27/156 , H01L31/0328 , H01L33/0008 , H01L33/0016 , H01L33/0079 , H01L33/0083 , H01L33/04 , H01L33/28 , H01L33/32 , H01S5/105 , H01S5/18369 , H01S5/20 , H01S5/3095
摘要： Light-emitting devices having a multiple quantum well (MQW) pin diode structure and methods of making and using the devices are provided. The devices are composed of multilayered semiconductor heterostructures. The devices include one or more interfacial layers of a material that allows current tunneling through lattice mismatched heterogeneous junctions at the interfaces between the intrinsic active region and the p-type and/or n-type doped charge injection layers.
摘要翻译：提供了具有多量子阱（MQW）pin二极管结构的发光器件以及制造和使用器件的方法。器件由多层半导体异质结构组成。这些器件包括一种或多种材料的界面层，其允许在本征有源区和p型和/或n型掺杂电荷注入层之间的界面处的电流隧穿通过晶格失配的异质结。

6. 发明授权

US09018641B2 Method for producing a radiation-emitting component and radiation-emitting component 有权
标题翻译：用于制造辐射发射部件和辐射发射部件的方法
公开(公告)号：US09018641B2
公开(公告)日：2015-04-28
申请号：US12745686
申请日：2008-10-24
申请人： Peter Brick , Uwe Strauss
发明人： Peter Brick , Uwe Strauss
IPC分类号： H01L29/49 , H01S5/32 , H01S5/00 , H01S5/10 , H01S5/20 , H01S5/30 , H01S5/40
CPC分类号： H01S5/1082 , H01S5/0035 , H01S5/10 , H01S5/1017 , H01S5/204 , H01S5/3095 , H01S5/32 , H01S5/3215 , H01S5/4043 , H01S2301/18 , H01S2301/185 , H01S2301/206
摘要： A method for manufacturing a radiation-emitting component (1) in which a field distribution of a near field (101, 201) in a direction perpendicular to a main emission axis of the component is specified. From the field distribution of the near field, an index of refraction profile (111, 211, 511) along this direction is determined. A structure is determined for the component such that the component will have the previously determined index of refraction profile. The component is constructed according to the previously determined structure. A radiation-emitting component is also disclosed.
摘要翻译：一种用于制造辐射发射部件（1）的方法，其中指定了在与部件的主发射轴垂直的方向上的近场（101,201）的场分布。根据近场的场分布，确定沿该方向的折射率分布（111,211,511）的折射率。确定组件的结构，使得组件将具有先前确定的折射率曲线。该组件根据先前确定的结构构造。还公开了一种辐射发射元件。

7. 发明授权

US08994000B2 Optoelectronic semiconductor chip 有权
标题翻译：光电半导体芯片
公开(公告)号：US08994000B2
公开(公告)日：2015-03-31
申请号：US13546857
申请日：2012-07-11
申请人： Adrian Avramescu , Volker Härle , Lutz Höppel , Matthias Peter , Matthias Sabathil , Uwe Strauss
发明人： Adrian Avramescu , Volker Härle , Lutz Höppel , Matthias Peter , Matthias Sabathil , Uwe Strauss
IPC分类号： H01L29/06 , H01S5/343 , B82Y20/00 , H01L33/04 , H01S5/042 , H01L33/06 , H01L33/32 , H01S5/20 , H01S5/30 , H01S5/32 , H01S5/34
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/04 , H01L33/06 , H01L33/32 , H01L2924/0002 , H01S5/0421 , H01S5/2009 , H01S5/3072 , H01S5/3095 , H01S5/3202 , H01S5/3407 , H01L2924/00
摘要： An optoelectronic semiconductor chip comprises the following sequence of regions in a growth direction (c) of the semiconductor chip (20): a p doped barrier layer (1) for an active region (2), the active region (2), which is suitable for generating electromagnetic radiation, the active region being based on a hexagonal compound semiconductor, and an n doped barrier layer (3) for the active region (2). Also disclosed are a component comprising such a semiconductor chip, and to a method for producing such a semiconductor chip.
摘要翻译：光电子半导体芯片包括在半导体芯片（20）的生长方向（c）上的以下区域序列：用于有源区域（2）的有源区（2），适合的有源区（2）用于产生电磁辐射，所述有源区基于六方晶系化合物半导体，以及用于所述有源区（2）的n掺杂阻挡层（3）。还公开了包括这种半导体芯片的部件，以及制造这种半导体芯片的方法。

8. 发明授权

US08917752B2 Reflectivity-modulated grating mirror 有权
标题翻译：反射调制光栅镜
公开(公告)号：US08917752B2
公开(公告)日：2014-12-23
申请号：US14111319
申请日：2012-05-09
申请人： Ii-Sug Chung
发明人： Ii-Sug Chung
IPC分类号： H01S5/00 , H01S5/183
CPC分类号： H01S5/18302 , H01S5/0655 , H01S5/105 , H01S5/18311 , H01S5/18316 , H01S5/18325 , H01S5/18327 , H01S5/18341 , H01S5/18366 , H01S5/18386 , H01S5/3095
摘要： The invention relates to vertical cavity lasers (VCL) incorporating a reflectivity-modulated grating mirror (1) for modulating the laser output. A cavity is formed by a bottom mirror (4), an active region (3), and an outcoupling top grating mirror (1) formed by a periodic refractive index grating region in a layer structure comprising a p- and a n-doped semiconductor layer with an electrooptic material layer (12) arranged there between. The grating region comprises a grating structure formed by periodic perforations to change the refractive index periodically in directions normal to the oscillation axis. A modulated voltage (91) is applied in reverse bias between the n- and p-doped layers to modulate the refractive index of the electrooptic material layer (12) and thereby the reflectivity spectrum of the grating mirror (1). The reflectivity of the grating mirror (1) can be modulated between a reflectivity with little or no out coupling and a reflectivity with normal out coupling, wherein lasing in the VCL is supported at both the first and the second reflectivity. As the out coupling mirror modulates the output, the lasing does not need to be modulated, and the invention provides the advantage of lower power consumption at high modulation speeds.
摘要翻译：本发明涉及结合有用于调制激光输出的反射率调制光栅镜（1）的垂直腔激光器（VCL）。空腔由底部反射镜（4），有源区域（3）和外耦合顶部光栅反射镜（1）形成，该反射镜顶部光栅反射镜（1）由层状结构中的周期性折射率光栅区形成，该层结构包括p型和n型掺杂半导体层，其间布置有电光材料层（12）。光栅区域包括通过周期性穿孔形成的光栅结构，以便以垂直于振荡轴线的方向周期性地改变折射率。调制电压（91）以反向偏压施加在n和p掺杂层之间，以调制电光材料层（12）的折射率，从而调整光栅镜（1）的反射光谱。光栅反射镜（1）的反射率可以在具有很少或没有耦合的反射率和具有正向耦合的反射率之间进行调制，其中VCL上的激光在第一和第二反射率都被支持。由于输出耦合镜调制输出，所以不需要对激光进行调制，本发明提供了在高调制速度下较低功耗的优点。

9. 发明授权

US08380033B1 Hybrid ridge waveguide 有权
标题翻译：混合脊波导
公开(公告)号：US08380033B1
公开(公告)日：2013-02-19
申请号：US13450328
申请日：2012-04-18
申请人： Alexander W. Fang , Gregory A. Fish , Steven C. Nicholes
发明人： Alexander W. Fang , Gregory A. Fish , Steven C. Nicholes
IPC分类号： G02B6/10
CPC分类号： H01S5/021 , H01S5/0218 , H01S5/22 , H01S5/3095 , H01S5/3211 , H01S2301/176
摘要： Embodiments of the invention relate to an electro-optic device comprising a first region of silicon semiconductor material and a second region of III-V semiconductor material. A waveguide of the optical device is formed in part by a ridge in the second region. An optical mode of the waveguide is laterally confined by the ridge of the second region and vertically confined by a vertical boundary included in the first region. The ridge structure further serves as a current confinement structure over the active region of the electro-optic device, eliminating the need for implantation or other structures that are known to present reliability problems during manufacturing. The lack of “voids” and implants in electro-optic devices according to embodiments of the invention leads to better device reliability, process repeatability and improved mechanical strength.
摘要翻译：本发明的实施例涉及包括硅半导体材料的第一区域和III-V半导体材料的第二区域的电光器件。光学器件的波导部分地由第二区域中的脊形成。波导的光学模式由第二区域的脊横向限制，并且由包括在第一区域中的垂直边界垂直限制。脊结构还用作电光器件的有源区域上的电流限制结构，消除了在制造期间已知可能出现可靠性问题的植入或其他结构的需要。在根据本发明的实施例的电光装置中缺少空隙和植入物导致更好的装置可靠性，工艺重复性和改进的机械强度。

10. 发明授权

US08194712B2 Monolithically integrated laser diode chip having a construction as a multiple beam laser diode 有权
标题翻译：具有构造为多光束激光二极管的单片集成激光二极管芯片
公开(公告)号：US08194712B2
公开(公告)日：2012-06-05
申请号：US12217100
申请日：2008-06-30
申请人： Martin Müller , Günther Grönninger , Alexander Behres
发明人： Martin Müller , Günther Grönninger , Alexander Behres
IPC分类号： H01S5/00
CPC分类号： H01S5/4043 , H01S5/3095 , H01S5/3201 , H01S5/3211 , H01S5/3215 , H01S5/4018
摘要： A monolithically integrated laser diode chip having a construction as a multiple beam laser diode, which, on a semiconductor substrate (3) comprised of GaAs, has at least two laser stacks (4a, 4b, 4c) which are arranged one above another and which each contain an active zone (7). The active zone (7) is in each case arranged between waveguide layers (8). The waveguide layers (8) each adjoin a cladding layer (6) at a side remote from the active zone. At least one of the waveguide layers (8) or cladding layers (6) of at least one laser stack (4a, 4b, 4c), comprises AlxGa1-xAs, where 0≦x≦1, and at least one additional material from main group III or V, such that the lattice mismatch between the at least one waveguide layer (8) or cladding layer (6) comprising the at least one additional element and the semiconductor substrate (3) composed of GaAs is reduced. This increases the lifetime of the laser diode chip.
摘要翻译：具有构造为多光束激光二极管的单片集成激光二极管芯片，其在由GaAs构成的半导体衬底（3）上具有至少两个激光堆叠（4a，4b，4c）每个都包含活动区域（7）。有源区（7）分别布置在波导层（8）之间。每个波导层（8）在远离有源区的一侧与包层（6）相邻。至少一个激光堆叠（4a，4b，4c）的至少一个波导层（8）或包覆层（6）包括Al x Ga 1-x As，其中0和n 1; x 1和n 1;以及至少一个来自主体的附加材料 III或V族，使得包含至少一个附加元件的至少一个波导层（8）或包层（6）与由GaAs构成的半导体衬底（3）之间的晶格失配减小。这增加了激光二极管芯片的寿命。

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