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1. 发明授权

US09343274B2 Process kit shield for plasma enhanced processing chamber 有权
标题翻译：用于等离子体增强处理室的工艺套件屏蔽
公开(公告)号：US09343274B2
公开(公告)日：2016-05-17
申请号：US14178146
申请日：2014-02-11
申请人： APPLIED MATERIALS, INC.
发明人： Muhammad Rasheed , Donny Young , Kirankumar Savandaiah , Uday Pai
IPC分类号： C23C14/56 , C23C14/34 , C23C16/44 , C23C14/35 , H01J37/34 , H01J37/32 , H01J19/54
CPC分类号： H01J37/3411 , C23C14/34 , C23C14/35 , C23C14/564 , C23C16/44 , H01J19/54 , H01J37/32495 , Y10T428/12528
摘要： Apparatus for processing substrates is disclosed herein. In some embodiments, an apparatus includes a first shield having a first end, a second end, and one or more first sidewalls disposed between the first and second ends, wherein the first end is configured to interface with a first support member of a process chamber to support the first shield in a position such that the one or more first sidewalls surround a first volume of the process chamber; and a second shield having a first end, a second end, and one or more second sidewalls disposed between the first and second ends of the second shield and about the first shield, wherein the first end of the second shield is configured to interface with a second support member of the process chamber to support the second shield such that the second shield contacts the first shield to form a seal therebetween.
摘要翻译：本文公开了用于处理衬底的设备。在一些实施例中，一种装置包括具有第一端，第二端和设置在第一和第二端之间的一个或多个第一侧壁的第一屏蔽，其中第一端构造成与处理室的第一支撑构件以将所述第一屏蔽件支撑在使得所述一个或多个第一侧壁围绕所述处理室的第一体积的位置; 以及第二屏蔽，其具有设置在所述第二屏蔽件的第一端和第二端之间并且围绕所述第一屏蔽的第一端，第二端和一个或多个第二侧壁，其中所述第二屏蔽的所述第一端被配置为与处理室的第二支撑构件以支撑第二屏蔽，使得第二屏蔽件接触第一屏蔽件以在其间形成密封。

2. 发明授权

US10763090B2 High pressure RF-DC sputtering and methods to improve film uniformity and step-coverage of this process 有权
公开(公告)号：US10763090B2
公开(公告)日：2020-09-01
申请号：US15237414
申请日：2016-08-15
申请人： Applied Materials, Inc.
发明人： Adolph Miller Allen , Lara Hawrylchak , Zhigang Xie , Muhammad M. Rasheed , Rongjun Wang , Xianmin Tang , Zhendong Liu , Tza-Jing Gung , Srinivas Gandikota , Mei Chang , Michael S. Cox , Donny Young , Kirankumar Savandaiah , Zhenbin Ge
IPC分类号： H01J37/34 , C23C14/34 , C23C14/35 , C23C14/54 , C23C14/56 , H01J37/32
摘要： Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber.

3. 发明授权

US09534286B2 PVD target for self-centering process shield 有权
标题翻译： PVD定位自动对中过程屏蔽
公开(公告)号：US09534286B2
公开(公告)日：2017-01-03
申请号：US13837742
申请日：2013-03-15
申请人： APPLIED MATERIALS, INC.
发明人： Goichi Yoshidome , Ryan Hanson , Donny Young , Muhammad Rasheed , Keith A. Miller
IPC分类号： C23C14/34 , H01J37/34
CPC分类号： C23C14/3407 , H01J37/3414 , H01J37/3435 , Y10T428/218 , Y10T428/219
摘要： In some embodiments, a target assembly, for use in a substrate processing chamber having a process shield, may include a backing plate having a first side and an opposing second side, wherein the second side comprises a first surface having a first diameter bounded by a first edge; a target material having a first side bonded to the first surface of the backing plate; wherein the first edge is an interface between the backing plate and the target material; a plurality of slots disposed along an outer periphery of the backing plate extending from the first side of the backing plate toward the second side of the backing plate, wherein the plurality of slots are configured to align the target assembly with respect to the process shield.
摘要翻译：在一些实施例中，用于具有过程屏蔽的衬底处理室中的目标组件可以包括具有第一侧和相对的第二侧的背板，其中第二侧包括具有第一直径的第一表面，第一边目标材料，其具有接合到所述背板的第一表面的第一侧; 其中所述第一边缘是所述背板和所述目标材料之间的界面; 沿着所述背板的第一侧面延伸到所述背板的所述第二侧面的沿着所述背板的外周设置的多个槽，其中所述多个槽被配置成相对于所述工艺防护罩对准所述目标组件。

4. 发明授权

US09404174B2 Pinned target design for RF capacitive coupled plasma 有权
标题翻译： RF电容耦合等离子体的固定目标设计
公开(公告)号：US09404174B2
公开(公告)日：2016-08-02
申请号：US13799014
申请日：2013-03-13
申请人： APPLIED MATERIALS, INC.
发明人： Donny Young , Alan A. Ritchie
IPC分类号： H01J37/34 , C23C14/34
CPC分类号： C23C14/34 , C23C14/3407 , H01J37/3408 , H01J37/3411 , H01J37/3435 , H01J37/3441
摘要： In some embodiments, substrate processing apparatus may include a chamber body; a lid disposed atop the chamber body; a target assembly coupled to the lid, the target assembly including a target of material to be deposited on a substrate; an annular dark space shield having an inner wall disposed about an outer edge of the target; a seal ring disposed adjacent to an outer edge of the dark space shield; and a support member coupled to the lid proximate an outer end of the support member and extending radially inward such that the support member supports the seal ring and the annular dark space shield, wherein the support member provides sufficient compression when coupled to the lid such that a seal is formed between the support member and the seal ring and the seal ring and the target assembly.
摘要翻译：在一些实施例中，衬底处理装置可以包括腔体; 设置在所述室主体顶部的盖子; 耦合到所述盖的目标组件，所述目标组件包括待沉积在衬底上的材料的靶; 环形暗空间屏蔽，其具有围绕靶的外边缘设置的内壁; 邻近所述暗室屏蔽的外边缘设置的密封环; 以及支撑构件，其紧邻所述支撑构件的外端并且径向向内延伸，使得所述支撑构件支撑所述密封环和所述环形暗空间屏蔽，其中所述支撑构件在联接到所述盖时提供足够的压缩，使得在支撑构件和密封环以及密封环和目标组件之间形成密封件。

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