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1. 发明申请

US20180025931A1 PROCESSED WAFER AS TOP PLATE OF A WORKPIECE CARRIER IN SEMICONDUCTOR AND MECHANICAL PROCESSING 审中-公开
公开(公告)号：US20180025931A1
公开(公告)日：2018-01-25
申请号：US15217328
申请日：2016-07-22
申请人： APPLIED MATERIALS, INC.
发明人： Srinivas D. Nemani , Shambhu N. Roy , Gautam Pisharody , Douglas A. Buchberger, JR. , Ellie Y. Yieh , Zhong Qiang Hua
IPC分类号： H01L21/683 , C23C16/513
CPC分类号： H01L21/6833 , C23C16/4581 , C23C16/4586 , C23C16/513
摘要： A processed wafer is described that may be used as a workpiece carrier in semiconductor and mechanical processing. In some examples, the workpiece carrier includes a substrate, an electrode formed on the substrate to carry an electric charge to grip a workpiece, a through hole through the substrate and connected to the electrode, and a dielectric layer over the substrate to isolate the electrode from the workpiece.

2. 发明申请

US20170154797A1 METHOD AND APPARATUS FOR POST EXPOSURE PROCESSING OF PHOTORESIST WAFERS 审中-公开
公开(公告)号：US20170154797A1
公开(公告)日：2017-06-01
申请号：US14989488
申请日：2016-01-06
申请人： Applied Materials, Inc.
发明人： Viachslav Babayan , Douglas A. Buchberger, JR. , Qiwei Liang , Ludovic Godet , Srinivas D. Nemani , Daniel J. Woodruff , Randy Harris , Robert B. Moore
IPC分类号： H01L21/67 , G03F7/20
CPC分类号： G03F7/2035 , G03F7/168 , G03F7/26 , G03F7/38 , H01L21/68764
摘要： Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. A pedestal may be disposed within the processing volume and a first electrode may be coupled to the pedestal. A moveable stem may extend through the chamber body opposite the pedestal and a second electrode may be coupled to the moveable stem. In certain embodiments, a fluid containment ring may be coupled to the pedestal and a dielectric containment ring may be coupled to the second electrode.

3. 发明申请

US20140334060A1 ELECTROSTATIC CHUCK HAVING THERMALLY ISOLATED ZONES WITH MINIMAL CROSSTALK 有权
标题翻译：具有最小型CROSSTALK的隔热隔离带的静电卡盘
公开(公告)号：US20140334060A1
公开(公告)日：2014-11-13
申请号：US14268994
申请日：2014-05-02
申请人： Applied Materials, Inc.
发明人： Vijay D. Parkhe , Konstantin Makhratchev , Jason Della Rosa , Hamid Noorbakhsh , Brad L. Mays , Douglas A. Buchberger, JR.
IPC分类号： H01L21/683
CPC分类号： H01L21/6833 , H01L21/67103 , H01L21/6831 , Y10T156/10
摘要： A substrate support assembly includes a ceramic puck and a thermally conductive base having an upper surface that is bonded to a lower surface of the ceramic puck. The thermally conductive base includes a plurality of thermal zones and a plurality of thermal isolators that extend from the upper surface of the thermally conductive base towards a lower surface of the thermally conductive base, wherein each of the plurality of thermal isolators provides approximate thermal isolation between two of the plurality of thermal zones at the upper surface of the thermally conductive base.
摘要翻译：衬底支撑组件包括陶瓷盘和导热基底，其具有结合到陶瓷盘的下表面的上表面。导热基底包括多个热区和多个热绝缘体，其从导热基底的上表面延伸到导热基底的下表面，其中多个热隔离器中的每一个提供在在导热基体的上表面的多个热区中的两个。

4. 发明申请

US20140034239A1 DIFFERENTIAL COUNTER ELECTRODE TUNING IN A PLASMA REACTOR WITH AN RF-DRIVEN WORKPIECE SUPPORT ELECTRODE 审中-公开
标题翻译：具有RF驱动工件支持电极的等离子体反应器中的差分计数器电极调谐
公开(公告)号：US20140034239A1
公开(公告)日：2014-02-06
申请号：US13958890
申请日：2013-08-05
申请人： APPLIED MATERIALS, INC.
发明人： Yang Yang , Kartik Ramaswamy , Kenneth S. Collins , Steven Lane , Douglas A. Buchberger, JR. , Lawrence Wong , Nipun Misra
IPC分类号： H01L21/67
CPC分类号： H01L21/67069 , H01J37/32082 , H01J37/32174 , H01J37/32568 , H01J37/32623 , H01J37/32642 , H01J37/32935 , H01J2237/2001 , H01L21/67109 , H01L21/6833
摘要： A plasma reactor includes an RF-driven wafer support electrode underlying a process zone and two (or more) counter electrodes overlying the process zone and facing different portions of the process zones, two (or more) variable reactances connected between respective ones of the counter electrodes and ground, and a controller governing the variable reactances to control distribution of a plasma parameter such as plasma ion density or ion energy.
摘要翻译：等离子体反应器包括位于处理区下面的RF驱动的晶片支撑电极和覆盖处理区并面对处理区的不同部分的两个（或更多个）对电极，两个（或更多个）可变电抗连接在相应的计数器之间电极和接地，以及控制可变电抗以控制诸如等离子体离子密度或离子能量之类的等离子体参数分布的控制器。

5. 发明申请

US20190279893A1 ELECTROSTATIC CHUCK HAVING THERMALLY ISOLATED ZONES WITH MINIMAL CROSSTALK 审中-公开
公开(公告)号：US20190279893A1
公开(公告)日：2019-09-12
申请号：US16421301
申请日：2019-05-23
申请人： Applied Materials, Inc.
发明人： Vijay D. Parkhe , Konstantin Makhratchev , Jason Della Rosa , Hamid Noobakhsh , Brad L. Mays , Douglas A. Buchberger, JR.
IPC分类号： H01L21/683 , H01L21/67
摘要： A substrate support assembly includes a ceramic puck and a thermally conductive base having an upper surface that is bonded to the ceramic puck. The thermally conductive base includes a plurality of thermal zones and a thermally managed material embedded in the thermally conductive base at the upper surface of the thermally conductive base in one or more of the plurality of thermal zones. The thermally managed material has different thermal conductive properties along a first direction and a second direction. The thermally conductive base further includes a plurality of thermal isolators that extend from the upper surface of the thermally conductive base towards a lower surface of the thermally conductive base between two or more of the plurality of thermal zones without contacting the lower surface of the thermally conductive base. Each of the plurality of thermal isolators provides a degree of thermal isolation.

6. 发明申请

US20140034612A1 METHOD OF DIFFERENTIAL COUNTER ELECTRODE TUNING IN AN RF PLASMA REACTOR 有权
标题翻译： RF等离子体反应器中差分计数器电极调谐的方法
公开(公告)号：US20140034612A1
公开(公告)日：2014-02-06
申请号：US13958898
申请日：2013-08-05
申请人： APPLIED MATERIALS, INC.
发明人： Yang Yang , Kartik Ramaswamy , Kenneth S. Collins , Steven Lane , Douglas A. Buchberger, JR. , Lawrence Wong , Nipun Misra
IPC分类号： H01J37/32
CPC分类号： H01J37/32064 , H01J37/32082 , H01J37/32174 , H01J37/32623 , H01J37/32642 , H01J2237/2001 , H01L21/67109 , H01L21/6833
摘要： A method of controlling distribution of a plasma parameter in a plasma reactor having an RF-driven electrode and two (or more) counter electrodes opposite the RF driven electrode and facing different portions of the process zones. The method includes providing two (or more) variable reactances connected between respective ones of the counter electrodes and ground, and governing the variable reactances to change distribution of a plasma parameter such as plasma ion density or ion energy.
摘要翻译：一种控制等离子体反应器中等离子体参数分布的方法，其具有RF驱动电极和与RF驱动电极相对的两个（或更多个）对置电极并且面对处理区的不同部分。该方法包括提供连接在相应的对置电极和接地之间的两个（或多个）可变电抗，并且控制可变电抗以改变诸如等离子体离子密度或离子能量之类的等离子体参数的分布。

7. 发明申请

US20180122679A1 STRESS BALANCED ELECTROSTATIC SUBSTRATE CARRIER WITH CONTACTS 审中-公开
公开(公告)号：US20180122679A1
公开(公告)日：2018-05-03
申请号：US15337973
申请日：2016-10-28
申请人： APPLIED MATERIALS, INC.
发明人： Shambhu N. Roy , Gautam Pisharody , Seshadri Ramaswami , Srinivas D. Nemani , Zhong Qiang Hua , Douglas A. Buchberger, JR. , Niranjan Kumar , Ellie Y. Yieh
IPC分类号： H01L21/683 , H01L21/67
CPC分类号： H01L21/67248 , H01L21/67103 , H01L21/67109 , H01L21/6831 , H01L21/6835 , H01L21/68785 , H01L2021/6006 , H01L2221/68304
摘要： A substrate carrier with contacts is described that is balanced for thermal stress. In one example workpiece carrier has a rigid substrate configured to support a workpiece to be carried for processing, a first dielectric layer over the substrate, an electrostatic conductive electrode over the first dielectric layer to electrostatically hold the workpiece to be carried, a second dielectric layer over the electrode to electrically isolate the workpiece from the electrode, and a third dielectric layer under the substrate to counter thermal stress applied to the substrate by the first and second dielectric layers.

8. 发明申请

US20170350017A1 Symmetrical Inductively Coupled Plasma Source with Symmetrical Flow Chamber 审中-公开
公开(公告)号：US20170350017A1
公开(公告)日：2017-12-07
申请号：US15685568
申请日：2017-08-24
申请人： Applied Materials, Inc.
发明人： Andrew Nguyen , Kenneth S. Collins , Kartik Ramaswamy , Shahid Rauf , James D. Carducci , Douglas A. Buchberger, JR. , Ankur Agarwal , Jason A. Kenney , Leonid Dorf , Ajit Balakrishna , Richard Fovell
IPC分类号： C23F1/08 , C23C14/28 , B01J12/00 , H05H1/46 , H01J37/32
CPC分类号： C23F1/08 , B01J12/002 , C23C14/28 , H01J37/321 , H01J37/3211 , H01J37/32733 , H01J37/32834 , H05H1/46
摘要： A plasma reactor has an overhead multiple coil inductive plasma source with symmetric RF feeds and a symmetrical chamber exhaust with plural struts through the exhaust region providing access to a confined workpiece support. A grid may be included for masking spatial effects of the struts from the processing region.

9. 发明申请

US20170250100A1 ELECTROSTATIC CHUCK HAVING THERMALLY ISOLATED ZONES WITH MINIMAL CROSSTALK 有权
公开(公告)号：US20170250100A1
公开(公告)日：2017-08-31
申请号：US15595870
申请日：2017-05-15
申请人： Applied Materials, Inc.
发明人： Vijay D. Parkhe , Konstantin Makhratchev , Jason Della Rosa , Hamid Noorbakhsh , Brad L. Mays , Douglas A. Buchberger, JR.
IPC分类号： H01L21/683 , H01L21/67
CPC分类号： H01L21/6833 , H01L21/67103 , H01L21/6831 , Y10T156/10
摘要： A substrate support assembly includes a ceramic puck and a thermally conductive base having an upper surface that is bonded to a lower surface of the ceramic puck. The thermally conductive base includes a plurality of thermal zones and a plurality of thermal isolators that extend from the upper surface of the thermally conductive base towards a lower surface of the thermally conductive base, wherein each of the plurality of thermal isolators provides approximate thermal isolation between two of the plurality of thermal zones at the upper surface of the thermally conductive base.

10. 发明申请

US20150060013A1 TUNABLE TEMPERATURE CONTROLLED ELECTROSTATIC CHUCK ASSEMBLY 审中-公开
标题翻译：可控温控止回阀组件
公开(公告)号：US20150060013A1
公开(公告)日：2015-03-05
申请号：US14019290
申请日：2013-09-05
申请人： APPLIED MATERIALS, INC.
发明人： Douglas A. Buchberger, JR.
IPC分类号： H01J37/32
CPC分类号： H01J37/32724 , H01J37/32091 , H01L21/67109 , H01L21/6831
摘要： Embodiments include a pedestal to support a workpiece during plasma processing with tunable temperature control. In one embodiment, the pedestal includes an electrostatic chuck (ESC) having a top surface over which the workpiece is to be disposed. The pedestal includes one or more heating elements disposed under the top surface of the ESC. The pedestal includes a cooling base disposed under the ESC. The pedestal includes a plurality of compartments disposed between the cooling base and the top surface of the ESC, the plurality of compartments independently controllable to different pressures. One or more controllers independently control pressure in a first of the plurality of compartments to a first pressure and in a second of the plurality of compartments to a second pressure.
摘要翻译：实施例包括在等离子体处理期间用可调节的温度控制来支撑工件的基座。在一个实施例中，基座包括具有顶表面的静电卡盘（ESC），工件将被放置在该顶表面上。基座包括设置在ESC顶面下方的一个或多个加热元件。基座包括设置在ESC下方的冷却基座。基座包括设置在冷却基座和ESC的顶表面之间的多个隔间，多个隔间独立地可控制到不同的压力。一个或多个控制器独立地将多个隔室中的第一隔室中的压力控制为第一压力，并将多个隔室中的第二个压力中的压力控制为第二压力。

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