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1. 发明授权

US11060203B2 Liner for epi chamber 有权
公开(公告)号：US11060203B2
公开(公告)日：2021-07-13
申请号：US14826065
申请日：2015-08-13
申请人： Applied Materials, Inc.
发明人： Shu-Kwan Lau , Mehmet Tugrul Samir , Aaron Miller
IPC分类号： C30B25/08 , C30B25/14 , C23C16/455 , C23C16/44 , C30B35/00
摘要： Embodiments disclosed herein describe a liner assembly including a plurality of individually separated gas passages. The liner assembly provides control of flow parameters, such as velocity, density, direction and spatial location, across a substrate being processed. The processing gas across the substrate being processed may be specially tailored for individual processes with a liner assembly according to the present embodiments.

2. 发明授权

US10170342B2 Flow controlled liner having spatially distributed gas passages 有权
公开(公告)号：US10170342B2
公开(公告)日：2019-01-01
申请号：US15716142
申请日：2017-09-26
申请人： Applied Materials, Inc.
发明人： Mehmet Tugrul Samir , Shu-Kwan Lau
IPC分类号： H01L21/67 , C23C16/44 , C23C16/455
摘要： Embodiments of the present disclosure provide a liner assembly including a plurality of individually separated gas passages. The liner assembly enables tenability of flow parameters, such as velocity, density, direction and spatial location, across a substrate being processed. The processing gas across the substrate being processed may be specially tailored for individual processes with a liner assembly according to embodiment of the present disclosure.

3. 发明申请

US20140251208A1 SUSCEPTOR SUPPORT SHAFT FOR IMPROVED WAFER TEMPERATURE UNIFORMITY AND PROCESS REPEATABILITY 有权
标题翻译：用于改进波浪温度均匀性和过程可重复性的SUSCEPTOR支持轴
公开(公告)号：US20140251208A1
公开(公告)日：2014-09-11
申请号：US14182634
申请日：2014-02-18
申请人： Applied Materials, Inc.
发明人： MEHMET TUGRUL SAMIR , Shu-Kwan Lau
IPC分类号： B05C13/00
CPC分类号： H01L21/68792 , B05C11/08 , H01L21/68742
摘要： Embodiments of the invention generally relate to susceptor support shafts and process chambers containing the same. A susceptor support shaft supports a susceptor thereon, which in turn, supports a substrate during processing. The susceptor support shaft reduces variations in temperature measurement of the susceptor and/or substrate by providing a consistent path for a pyrometer focal beam directed towards the susceptor and/or substrate, even when the susceptor support shaft is rotated. The susceptor support shafts also have a relatively low thermal mass which increases the ramp up and ramp down rates of a process chamber.
摘要翻译：本发明的实施例通常涉及承载支撑轴和包含该基座的处理室。基座支撑轴支撑在其上的基座，其在处理期间又支撑基板。基座支撑轴通过为指向基座和/或基板的高温计光束提供一致的路径来减小基座和/或基板的温度测量的变化，即使基座支撑轴旋转。基座支撑轴还具有相对较低的热质量，这增加了处理室的斜坡上升和下降速率。

4. 外观设计

USD711331S1 Upper chamber liner 有权
标题翻译：上室内衬
公开(公告)号：USD711331S1
公开(公告)日：2014-08-19
申请号：US29472048
申请日：2013-11-07
申请人： Applied Materials, Inc.
设计人： Shu-Kwan Lau , Mehmet Tugrul Samir , Anzhong Chang , Paul Brillhart , Richard O. Collins

5. 发明授权

US11261538B1 In-situ temperature mapping for epi chamber 有权
公开(公告)号：US11261538B1
公开(公告)日：2022-03-01
申请号：US17027385
申请日：2020-09-21
申请人： Applied Materials, Inc.
发明人： Ala Moradian , Zuoming Zhu , Patricia M. Liu , Shu-Kwan Lau , Flora Fong-Song Chang , Enle Choo , Zhiyuan Ye
IPC分类号： C30B25/16 , H01L21/67 , C30B25/10
摘要： The present invention provides methods and apparatus for processing semiconductor substrates in an epitaxy chamber configured to map a temperature profile for both substrates and interior chamber components. In one embodiment, the semiconductor processing chamber has a body having ceiling and a lower portion defining an interior volume. A substrate support is disposed in the interior volume. A mounting plate is coupled to the ceiling outside the interior volume. A movement assembly is coupled to the mounting plate. A sensor is coupled to the movement assembly and moveable relative to the ceiling. The sensor is configured to detect a temperature location in the interior volume.

6. 发明授权

US11021795B2 Multi zone spot heating in epi 有权
公开(公告)号：US11021795B2
公开(公告)日：2021-06-01
申请号：US16170255
申请日：2018-10-25
申请人： Applied Materials, Inc.
发明人： Shu-Kwan Lau , Koji Nakanishi , Toshiyuki Nakagawa , Zuoming Zhu , Zhiyuan Ye , Joseph M. Ranish , Nyi O. Myo , Errol Antonio C. Sanchez , Schubert S. Chu
IPC分类号： C23C16/46 , H01L21/67 , H01L21/687 , B23K26/00 , B23K26/12 , B23K26/06 , B23K26/03 , B23K26/08 , C23C16/52 , B23K26/352
摘要： Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. The thermal process chamber includes a substrate support, a first plurality of heating elements disposed over or below the substrate support, and a spot heating module disposed over the substrate support. The spot heating module is utilized to provide local heating of cold regions on a substrate disposed on the substrate support during processing. Localized heating of the substrate improves temperature profile, which in turn improves deposition uniformity.

7. 发明授权

US10760161B2 Inject insert for EPI chamber 有权
公开(公告)号：US10760161B2
公开(公告)日：2020-09-01
申请号：US14584441
申请日：2014-12-29
申请人： Applied Materials, Inc.
发明人： Shu-Kwan Lau , Mehmet Tugrul Samir , Aaron Miller
IPC分类号： C23C16/455 , F16L41/02 , C30B25/14 , C30B31/16 , H01J37/32 , C30B25/16
摘要： Embodiments of the present invention provide a liner assembly including an inject insert. The inject insert enables tenability of flow parameters, such as velocity, density, direction and spatial location, across a substrate being processed. The processing gas across the substrate being processed may be specially tailored for individual processes with a liner assembly according to embodiment of the present invention.

8. 发明授权

US10047457B2 EPI pre-heat ring 有权
公开(公告)号：US10047457B2
公开(公告)日：2018-08-14
申请号：US14461137
申请日：2014-08-15
申请人： Applied Materials, Inc.
发明人： Kartik Shah , Shu-Kwan Lau
IPC分类号： C23C16/458 , C30B25/08 , C30B25/14 , C30B25/12 , C30B25/10
CPC分类号： C30B25/14 , C23C16/4585 , C30B25/08 , C30B25/10 , C30B25/12 , Y10T428/218
摘要： Embodiments of the present disclosure generally relate to a process chamber having a pre-heat ring for heating the process gas. In one embodiment, the process chamber includes a chamber body defining an interior processing region, a substrate support disposed within the chamber body, the substrate support having a substrate support surface for supporting a substrate, and a pre-heat ring positioned on a ring support disposed within the chamber body, wherein a portion of the pre-heat ring is tilted downwardly by a predetermined angle towards the gas exhaust side with respect to the substrate support surface to promote the purge gas flowing more through the gas exhaust side than the gas injection side.

9. 发明授权

US09553002B2 Flow controlled liner having spatially distributed gas passages 有权
标题翻译：流动控制衬管具有空间分布的气体通道
公开(公告)号：US09553002B2
公开(公告)日：2017-01-24
申请号：US14259898
申请日：2014-04-23
申请人： Applied Materials, Inc.
发明人： Mehmet Tugrul Samir , Shu-Kwan Lau
IPC分类号： H01L23/48 , H01L21/67 , C23C16/44 , C23C16/455
CPC分类号： H01L21/67017 , C23C16/4401 , C23C16/455 , C23C16/45519 , H01L21/67115 , H01L21/67253 , Y10T137/87265
摘要： Embodiments of the present disclosure provide a liner assembly including a plurality of individually separated gas passages. The liner assembly enables tenability of flow parameters, such as velocity, density, direction and spatial location, across a substrate being processed. The processing gas across the substrate being processed may be specially tailored for individual processes with a liner assembly according to embodiment of the present disclosure.
摘要翻译：本公开的实施例提供了一种衬套组件，其包括多个单独分离的气体通道。衬套组件使得能够处理正在处理的衬底上的流动参数（例如速度，密度，方向和空间位置）的可维护性。正在处理的衬底上的处理气体可以根据本公开的实施例专门针对具有衬套组件的各个工艺进行定制。

10. 发明授权

US09532401B2 Susceptor support shaft with uniformity tuning lenses for EPI process 有权
标题翻译：受体支撑轴具有用于EPI过程的均匀性调焦镜头
公开(公告)号：US09532401B2
公开(公告)日：2016-12-27
申请号：US14181035
申请日：2014-02-14
申请人： Applied Materials, Inc.
发明人： Zhepeng Cong , Balasubramanian Ramachandran , Masato Ishii , Xuebin Li , Mehmet Tugrul Samir , Shu-Kwan Lau , Paul Brillhart
IPC分类号： F27D5/00 , C23C14/00 , H01L21/302 , H05B1/02
CPC分类号： H05B1/0227 , H05B2203/032
摘要： Embodiments of the invention generally relate to susceptor support shafts and process chambers containing the same. A susceptor support shaft supports a susceptor thereon, which in turn, supports a substrate during processing. The susceptor support shaft reduces variations in temperature measurement of the susceptor and/or substrate by providing a consistent path for a pyrometer focal beam directed towards the susceptor and/or substrate, even when the susceptor support shaft is rotated. The susceptor support shafts also have a relatively low thermal mass which increases the ramp up and ramp down rates of a process chamber. In some embodiments, a custom made refractive element can be removably placed on the top of the solid disc to redistribute secondary heat distributions across the susceptor and/or substrate for optimum thickness uniformity of epitaxy process.
摘要翻译：本发明的实施例通常涉及承载支撑轴和包含该基座的处理室。基座支撑轴支撑在其上的基座，其在处理期间又支撑基板。基座支撑轴通过为指向基座和/或基板的高温计光束提供一致的路径来减小基座和/或基板的温度测量的变化，即使基座支撑轴旋转。基座支撑轴还具有相对较低的热质量，这增加了处理室的斜坡上升和下降速率。在一些实施例中，定制的折射元件可以可移除地放置在固体盘的顶部上，以重新分布穿过基座和/或衬底的二次热分布，以获得外延工艺的最佳厚度均匀性。

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