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1. 发明授权

US5902103A Vertical furnace of a semiconductor manufacturing apparatus and a boat cover thereof 失效
标题翻译：半导体制造装置的立式炉及其船盖
公开(公告)号：US5902103A
公开(公告)日：1999-05-11
申请号：US771976
申请日：1996-12-23
申请人： Kiyohiko Maeda , Satoshi Kakizaki , Tomoshi Taniyama , Hidehiro Yanagawa , Ken-ichi Suzaki
发明人： Kiyohiko Maeda , Satoshi Kakizaki , Tomoshi Taniyama , Hidehiro Yanagawa , Ken-ichi Suzaki
IPC分类号： H01L21/22 , C23C16/44 , C23C16/455 , C30B25/14 , C30B31/16 , H01L21/00 , F27D5/00
CPC分类号： H01L21/67098 , C23C16/455 , C23C16/45591 , C30B25/14 , C30B31/16
摘要： A vertical furnace for use in a semiconductor manufacturing apparatus, which comprises a heater, an outer tube, an inner tube, all being disposed concentrically in a multi-layered fashion, a boat adapted to be introduced into the inner tube with a wafer loaded thereon, and a boat cover disposed internally of the inner tube concentrically therewith. The boat cover is comprised of a boat cover body and an auxiliary cover plate connected to said boat cover body with a given gap therebetween, the boat cover body having a predetermined number of slit apertures extending in a generator direction thereof, the auxiliary cover plate being disposed to cover the slit apertures. The introduced reactive gas flows in branched streams, one flowing through the inside of the boat cover and the other flowing in past the boat cover, whereby the film deposited on the wafer is improved in uniformity and homogeneity. Further, since the boat cover is provided on the inner tube in the form of a unitary body, adjustments relative thereto can be made easily, thus improving the efficiency of the maintenance works thereof.
摘要翻译：一种用于半导体制造装置的垂直炉，其包括加热器，外管，内管，全部以多层方式同心设置，适于在其上装载有晶片的情况下引入内管中的船以及与其同心地配置在内管的内部的船盖。船盖由船盖体和辅助盖板组成，辅助盖板在其间具有给定的间隙连接到船盖体，船盖主体具有沿其发电机方向延伸的预定数量的狭缝孔，辅助盖板为设置成覆盖狭缝孔。引入的反应气体以分支流流动，一个流经船盖的内部，另一个流过船盖，由此沉积在晶片上的膜的均匀性和均匀性得到改善。此外，由于舟形盖以单体形式设置在内管上，因此可以容易地进行相对于其的调节，从而提高其维护工作的效率。

2. 发明授权

US5656541A Low temperature P.sub.2 O.sub.5 oxide diffusion source 失效
标题翻译：低温P2O5氧化物扩散源
公开(公告)号：US5656541A
公开(公告)日：1997-08-12
申请号：US498200
申请日：1995-07-05
申请人： James E. Rapp , Gary R. Pickrell
发明人： James E. Rapp , Gary R. Pickrell
IPC分类号： C30B31/16 , H01L21/22 , H01L21/223
CPC分类号： H01L21/2225 , C30B31/165 , Y10S252/95 , Y10S252/951
摘要： The present invention relates to a solid low temperature phosphorus diffusion source that is an R.sub.2 O.sub.3 /P.sub.2 O.sub.5 compound in which the ratio of R.sub.2 O.sub.3 to P.sub.2 O.sub.5 is 1 to 5 and R is Nd, Eu, Pr, Sm, Ho, Tb, Er, Yb, Tm or Dy. The invention also relates to a method of making the diffusion source, a method of using the diffusion source to evolve P.sub.2 O.sub.5 to dope a silicon wafer, and the doped silicon wafer.
摘要翻译：本发明涉及一种固体低温磷扩散源，其中R2O3 / P2O5的比例为1〜5，R为Nd，Eu，Pr，Sm，Ho，Tb，Er，Yb， Tm或Dy。本发明还涉及一种制造扩散源的方法，使用该扩散源产生P2O5以掺杂硅晶片的方法和掺杂的硅晶片。

3. 发明授权

US5567149A Exhaust system for high temperature furnace 失效
公开(公告)号：US5567149A
公开(公告)日：1996-10-22
申请号：US355571
申请日：1994-12-14
申请人： Richard R. Hansotte, Jr. , Dieter K. Neff , Dennis A. Rock , Jeffrey A. Walker , Roland M. Wanser
发明人： Richard R. Hansotte, Jr. , Dieter K. Neff , Dennis A. Rock , Jeffrey A. Walker , Roland M. Wanser
IPC分类号： C30B31/16 , C30B33/00 , F27D17/00 , F27D5/00
CPC分类号： F27D17/001 , C30B31/16 , C30B33/00 , C30B33/005
摘要： An exhaust system for use with a high temperature furnace used to perform oxidation and/or annealing operations of the type used in semiconductor fabrication. The exhaust system is designed to permit the furnace to be used with a controlled environment chamber surrounding the entry to the process chamber of the furnace. The exhaust system allows a relatively high velocity flow of exhaust gas from the process chamber through the exhaust system to occur when a positive pressure (e.g., annealing) operations are performed. Such high velocity flow prevents (a) backstreaming and (b) the accumulation of non-uniform concentrations of exhaust gases in the exhaust system, thereby permitting the accurate monitoring of the concentration of a selected gas in the exhaust system. Based on such monitoring, the opening of the door to the process chamber of the furnace may be prevented when the concentration of the selected gas exceeds a predetermined level. Preferably, all portions of the exhaust system potentially exposed to process chamber gases are made from quartz.

4. 发明授权

US5405446A Apparatus for heat processing a substrate 失效
标题翻译：用于热处理衬底的装置
公开(公告)号：US5405446A
公开(公告)日：1995-04-11
申请号：US272486
申请日：1994-07-11
申请人： Toshihiro Nakajima , Takatoshi Chiba , Kiyofumi Nishii , Toru Sato
发明人： Toshihiro Nakajima , Takatoshi Chiba , Kiyofumi Nishii , Toru Sato
IPC分类号： H01L21/26 , C23C16/44 , C23C16/455 , C30B25/14 , C30B31/16 , H01L21/00 , H01L21/205 , H01L21/22 , H01L21/31 , H01L21/324 , C23C16/00
CPC分类号： C23C16/45504 , C23C16/45512 , C23C16/4558 , C30B25/14 , C30B31/16 , H01L21/67109
摘要： An apparatus for heat processing a substrate includes a heat processing furnace, which has a flat inner space for accommodating the substrate, and a gas introduction unit which introduces gas supplied via a piping into the inner space of the heat processing furnace via a gas supply inlet of the heat processing furnace. The apparatus effects the heat processing on the substrate placed within a gas flow formed in the inner space. The gas introduction unit includes a first gas introduction chamber, which receives the gas supplied via the piping for reducing a flow velocity of the gas, and a second gas introduction chamber, which is in communication with the first gas introduction chamber, is formed over at least one of outer surfaces of the top furnace wall and the bottom furnace wall at the one end of the heat processing furnace, and extends in a belt-like form through an entire width of the heat processing furnace. A portion of the top furnace wall and/or bottom furnace wall, over which the second gas introduction chamber is formed, has a nozzle opening, which covers the entire width of the heat processing furnace for flowing the gas from the second gas introduction chamber into the inner space in a direction perpendicular to the top furnace wall and/or bottom furnace wall. The gas supply port and the first gas introduction chamber are preferably separated from each other by a partition which forms a portion of a cylindrical or spherical surface and has a plurality of through-holes.
摘要翻译：一种用于加热基板的设备包括：热处理炉，其具有用于容纳基板的平坦内部空间;以及气体引入单元，其经由管道供给的气体经由气体供给入口引入到热处理炉的内部空间的热处理炉。该装置对放置在内部空间中形成的气流内的基板进行热处理。气体引入单元包括：第一气体导入室，其接收经由管道供给的气体，用于降低气体的流速;以及与第一气体导入室连通的第二气体导入室，形成在在热处理炉的一端的顶炉壁和底炉壁的至少一个外表面，并且以带状形式延伸通过热处理炉的整个宽度。顶部炉壁和/或底部炉壁的形成有第二气体导入室的部分具有喷嘴开口，该喷嘴开口覆盖用于使气体从第二气体导入室流出的热处理炉的整个宽度进入在垂直于顶部炉壁和/或底部炉壁的方向上的内部空间。气体供给口和第一气体导入室优选通过形成圆筒状或球面的一部分并具有多个通孔的隔壁相互分离。

5. 发明授权

US5273424A Vertical heat treatment apparatus 失效
标题翻译：立式热处理设备
公开(公告)号：US5273424A
公开(公告)日：1993-12-28
申请号：US928096
申请日：1992-08-13
申请人： Jun-ichi Kobayashi
发明人： Jun-ichi Kobayashi
IPC分类号： C30B31/16 , C30B33/00 , C30B35/00 , F27D3/12
CPC分类号： C30B33/00 , C30B31/16 , C30B35/00
摘要： A vertical heat treatment apparatus has a reaction furnace, gas-introducing mechanism, a gas-exhausting mechanism, and temperature-sensing means. The reaction furnace is made up of a reaction tube and a heating mechanism. The reaction tube contains a plurality of objects which are to be treated and which are arranged at predetermined intervals. The heating mechanism is arranged outside of the reaction tube. The gas-introducing means introduces a gas into the reaction tube, and the gas-exhausting mechanism exhausts the gas from the reaction tube. The temperature-sensing mechanism includes a guide pipe which passes through the side wall of the reaction tube and which extends along the inner wall of the reaction tube in the longitudinal direction of the reaction tube. One end of the guide pipe is closed and is located inside the reaction tube, while the other end thereof is open and is located outside of the reaction tube. A bendable temperature-measuring device is inserted in the guide pipe. With this structure, the vertical heat treatment apparatus can perform treatment while simultaneously measuring the temperature in the interior of the reaction tube.
摘要翻译：立式热处理装置具有反应炉，气体引入机构，排气机构和温度检测装置。反应炉由反应管和加热机构构成。反应管包含待处理的多个物体，并且以预定间隔布置。加热机构设置在反应管的外部。气体导入装置将气体引入反应管，排气机构从反应管排出气体。温度检测机构包括导管，其穿过反应管的侧壁，并沿反应管的内壁在反应管的纵向延伸。引导管的一端封闭，位于反应管的内侧，另一端开放，位于反应管的外侧。可弯曲的温度测量装置插入导管中。利用这种结构，垂直热处理装置可以同时测量反应管内部的温度进行处理。

6. 发明授权

US5174825A Uniform gas distributor to a wafer 失效
标题翻译：均匀的气体分配器到晶圆
公开(公告)号：US5174825A
公开(公告)日：1992-12-29
申请号：US571950
申请日：1990-08-23
申请人： Daniel White, Jr. , Mary E. Weber
发明人： Daniel White, Jr. , Mary E. Weber
IPC分类号： C23C16/44 , C23C16/455 , C30B25/14 , C30B31/16
CPC分类号： C23C16/45504 , C23C16/45582 , C23C16/45591 , C30B25/14 , C30B31/16
摘要： A gas distribution system 140 includes a gas distribution chamber 142 and a gas distributor 154. Gas distribution chamber 142 includes an open end 144 and a closed end 146. A workpiece 148 is disposed adjacent closed end 146. Gas distributor 154 includes an outer collar 156 and an inner collar 158. Inner collar 158 has a continuously increasing cross-sectional diameter from a first predetermined point 160 to a second predetermined point 162. Gases are introduced through an inlet tube 150 disposed through an aperture in a platform 152 into the interior of inner collar 158 and toward workpiece 148. A diverter 164 diverts incoming gases from inlet tube 150.
摘要翻译：气体分配系统140包括气体分配室142和气体分配器154.气体分配室142包括开放端144和封闭端146.工件148邻近封闭端146设置。气体分配器154包括外部轴环156 内轴环158具有从第一预定点160到第二预定点162的连续增加的截面直径。气体通过设置在平台152中的孔的入口管150引入到内轴环158并朝向工件148.分流器164将进入的气体从入口管150转移。

7. 发明授权

US5174748A Chamber having a hot zone and a cold zone and at least one gas inlet tube 失效
标题翻译：有一个热区和一个冷区和至少一个气体入口管的房子
公开(公告)号：US5174748A
公开(公告)日：1992-12-29
申请号：US757097
申请日：1991-09-10
申请人： Claude Foucher , Jose Maluenda
发明人： Claude Foucher , Jose Maluenda
IPC分类号： C30B25/14 , C30B31/16 , H01L21/205 , H01L21/265 , H01L21/324
CPC分类号： C30B25/14 , C30B31/16
摘要： A reactor (100) is provided which comprises an enclosure (1,2,3) which has along its longitudinal axis (4--4') a hot zone (1), a cold zone (2) and between the hot and the cold zone an intermediate zone (3) and which has at least one gas inlet tube (12,32). The reactor further comprises a heat-insulating plug (30) for being positioned in the intermediate zone (3) to prevent a gas-flow from the hot zone (1) to the cold zone (2) of the enclosure (1,2,3) and coupling means (13,102;33,36) for transmitting gas from the gas inlet tube (12;32) into the hot zone (1). The use of the heat insulating plug (30) prevents deposition of unwanted material on the walls of the cold zone (2) of the reactor.
摘要翻译：提供了一种反应器（100），其包括具有沿着其纵向轴线（4-4'）热区（1），冷区（2）以及热和冷区域中间区域（3），并且具有至少一个气体入口管（12,32）。反应器还包括用于定位在中间区域（3）中的隔热塞（30），以防止气体从热区（1）流到外壳（1,2）的冷区（2） 3）和用于将气体从气体入口管（12; 32）传送到热区（1）中的耦合装置（13,102; 33,36）。绝热塞（30）的使用防止了不想要的材料沉积在反应器的冷区（2）的壁上。

8. 发明授权

US5064367A Conical gas inlet for thermal processing furnace 失效
标题翻译：热处理炉锥形进气口
公开(公告)号：US5064367A
公开(公告)日：1991-11-12
申请号：US563937
申请日：1990-08-06
申请人： Ara Philipossian
发明人： Ara Philipossian
IPC分类号： C30B31/16 , F27B17/00
CPC分类号： C30B31/16 , F27B17/0025
摘要： A tube furnace used for high-temperature processing of semiconductor wafers or the like employs a cone-like shape for the gas inlet or nozzle where the reactant or insert gas enters the furnace tube. This conical nozzle produces a gas flow of faster velocities, following the flow streamlines, and avoids or minimizes recirculating gas cells. The amount of gas used in purging a tube with this configuration is reduced, and the time needed for thorough purging is also reduced. Greater process control, and enhanced process reproducibility, are also possible because of the reduction in overlap of process steps permitted by the faster purging. This feature of faster purging can, in addition, reduce the infiltration of ambient air which occurs during any processing step.
摘要翻译：用于半导体晶片等的高温处理的管式炉子对于反应物或插入气体进入炉管的气体入口或喷嘴采用锥形。该锥形喷嘴在流动流线之后产生更快速度的气流，并避免或最小化再循环气体单元。用于清洗具有这种构造的管的气体量减少，彻底清洗所需的时间也减少。更大的过程控制和增强的过程重复性也是可能的，因为减少快速清洗允许的工艺步骤的重叠。此外，这种快速清洗的特征还可以减少在任何处理步骤期间发生的环境空气的渗透。

9. 发明授权

US5024599A Semiconductor processing apparatus for creating back pressure within a quartz furnace tube 失效
标题翻译：用于在石英炉管内产生背压的半导体加工装置
公开(公告)号：US5024599A
公开(公告)日：1991-06-18
申请号：US513557
申请日：1990-04-24
申请人： Navjot Chhabra
发明人： Navjot Chhabra
IPC分类号： C30B31/16
CPC分类号： C30B31/16
摘要： Disclosed is a semiconductor processing furnace flow restricting apparatus for insertion into a longitudinally elongated semiconductor wafer processing furnace to create back pressure to increase residence time of processing gases within the furnace. The apparatus comprises:at least two ring-like members, one of the ring-like members being concentrically mounted inside the other, the ring-like members each having a fore longitudinal end and an aft longitudinal end, the two ring-like members each having a varying diameter which tapers inwardly from the fore longitudinal end to the aft longitudinal end; anda lower mounting assembly having a male fitting cross sectional size and shape which is complementary to an upward female size and shape of the elongated wafer paddle, the male shape of the mounting assembly being supportable within the female shape of the wafer paddle to laterally position the two rings when the paddle and apparatus are received within a semiconductor wafer processing furnace.
摘要翻译：公开了一种半导体加工炉流量限制装置，用于插入到纵向细长的半导体晶片处理炉中以产生回压以增加处理气体在炉内的停留时间。该装置包括：至少两个环状构件，其中一个环形构件同心地安装在另一个中，环形构件各自具有前纵向端部和后纵向端部，每个环形构件具有从前纵向端向后纵向端部向内逐渐变细的直径; 以及下部安装组件，其具有与所述细长晶片桨叶的向上的雌性尺寸和形状互补的阳配合横截面尺寸和形状，所述安装组件的阳形状可支撑在所述晶片桨的所述雌性形状内，以横向位置当桨和装置被接收在半导体晶片处理炉内时，两个环。

10. 发明授权

US4748135A Method of manufacturing a semiconductor device by vapor phase deposition using multiple inlet flow control 失效
公开(公告)号：US4748135A
公开(公告)日：1988-05-31
申请号：US54543
申请日：1987-05-27
申请人： Peter M. Frijlink
发明人： Peter M. Frijlink
IPC分类号： H01L21/205 , C23C16/44 , C23C16/455 , C30B25/14 , C30B31/16 , H01L21/20
CPC分类号： C23C16/45514 , C23C16/455 , C23C16/45576 , C30B25/14 , C30B31/165 , Y10S148/057 , Y10S148/11 , Y10T137/87676
摘要： A method of manufacturing a semiconductor device including the step of depositing from the vapor layers on a substrate in the chamber of a reactor in which a vector gas and a reactant gas are introduced, characterized in that the vector gas and the reactant gas are introduced into the chamber of the reactor by means of a system of three coaxial tubes, the first of which (the inner tube) has a diameter smaller than that of the second tube (the intermediate tube), which in turn has a diameter smaller than that of the third tube (the outer tube), the first ends of these tube being independent, but the second ends thereof situated in the proximity of each other cooperating with each other so as to form a valve controlling the introduction of the reactant gas into the hot zone of the chamber of the reactor mixed with a vector gas, these tubes being disposed in such a manner that: the said second end of the inner tube merges into the intermediate tube, the said second end of the intermediate tube provided with a restriction merges into the outer tube, the said second end of the outer tube provided with a restriction merges into the chamber of the reactor in the proximity of the hot zone, the said first end of the intermediate tube is provided with a valve V, in that the reactant gas is introduced through the first end of the inner tube and circulates in the direction of the second end to the intermediate tube, in that the vector fluid is introduced through the first end of the outer tube and circulates in the direction of the second end to the chamber of the reactor, in that, the flow rate of the vector gas being chosen to be very much higher than the flow rate of the reactant gas, the tube system behaves like a commutation valve which directs the whole quantity of reactant gas to the chamber of the reactor when the valve V is closed and to the first end of the intermediate tube when the valve V is opened.

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