专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US12009228B2 Low temperature chuck for plasma processing systems 有权
公开(公告)号：US12009228B2
公开(公告)日：2024-06-11
申请号：US18175104
申请日：2023-02-27
申请人： Applied Materials, Inc.
发明人： Toan Q. Tran , Zilu Weng , Dmitry Lubomirsky , Satoru Kobayashi , Tae Seung Cho , Soonam Park , Son M. Phi , Shankar Venkataraman
IPC分类号： H01L21/67 , H01J37/32 , H01L21/3065 , H01L21/683 , H01L21/687 , H01L21/311
CPC分类号： H01L21/67069 , H01J37/32715 , H01L21/3065 , H01L21/67103 , H01L21/67248 , H01L21/6831 , H01L21/68757 , H01L21/68785 , H01L21/68792 , H01L21/31116 , H01L21/31138
摘要： A wafer chuck assembly includes a puck, a shaft and a base. The puck includes an electrically insulating material that defines a top surface of the puck; a plurality of electrodes are embedded within the electrically insulating material. The puck also includes an inner puck element that forms one or more channels for a heat exchange fluid, the inner puck element being in thermal communication with the electrically insulating material, and an electrically conductive plate disposed proximate to the inner puck element. The shaft includes an electrically conductive shaft housing that is electrically coupled with the plate, and a plurality of connectors, including electrical connectors for the electrodes. The base includes an electrically conductive base housing that is electrically coupled with the shaft housing, and an electrically insulating terminal block disposed within the base housing, the plurality of connectors passing through the terminal block.

2. 发明公开

US20230223281A1 LOW TEMPERATURE CHUCK FOR PLASMA PROCESSING SYSTEMS 审中-公开
公开(公告)号：US20230223281A1
公开(公告)日：2023-07-13
申请号：US18175104
申请日：2023-02-27
申请人： Applied Materials, Inc.
发明人： Toan Q. Tran , Zilu Weng , Dmitry Lubomirsky , Satoru Kobayashi , Tae Seung Cho , Soonam Park , Son M. Phi , Shankar Venkataraman
IPC分类号： H01L21/67 , H01L21/3065 , H01L21/683 , H01J37/32 , H01L21/687 , H01L21/311
CPC分类号： H01L21/67069 , H01J37/32715 , H01L21/3065 , H01L21/6831 , H01L21/67103 , H01L21/67248 , H01L21/68757 , H01L21/68785 , H01L21/68792 , H01L21/31116 , H01L21/31138
摘要： A wafer chuck assembly includes a puck, a shaft and a base. The puck includes an electrically insulating material that defines a top surface of the puck; a plurality of electrodes are embedded within the electrically insulating material. The puck also includes an inner puck element that forms one or more channels for a heat exchange fluid, the inner puck element being in thermal communication with the electrically insulating material, and an electrically conductive plate disposed proximate to the inner puck element. The shaft includes an electrically conductive shaft housing that is electrically coupled with the plate, and a plurality of connectors, including electrical connectors for the electrodes. The base includes an electrically conductive base housing that is electrically coupled with the shaft housing, and an electrically insulating terminal block disposed within the base housing, the plurality of connectors passing through the terminal block.

3. 发明申请

US20170229326A1 LOW TEMPERATURE CHUCK FOR PLASMA PROCESSING SYSTEMS 审中-公开
公开(公告)号：US20170229326A1
公开(公告)日：2017-08-10
申请号：US15581497
申请日：2017-04-28
申请人： Applied Materials, Inc.
发明人： Toan Q. Tran , Zilu Weng , Dmitry Lubomirsky , Satoru Kobayashi , Tae Seung Cho , Soonam Park , Son M. Phi , Shankar Venkataraman
IPC分类号： H01L21/67 , H01L21/683
CPC分类号： H01L21/67069 , H01L21/3065 , H01L21/31116 , H01L21/31138 , H01L21/67103 , H01L21/67248 , H01L21/6831 , H01L21/68757 , H01L21/68785 , H01L21/68792
摘要： A wafer chuck assembly includes a puck, a shaft and a base. The puck includes an electrically insulating material that defines a top surface of the puck; a plurality of electrodes are embedded within the electrically insulating material. The puck also includes an inner puck element that forms one or more channels for a heat exchange fluid, the inner puck element being in thermal communication with the electrically insulating material, and an electrically conductive plate disposed proximate to the inner puck element. The shaft includes an electrically conductive shaft housing that is electrically coupled with the plate, and a plurality of connectors, including electrical connectors for the electrodes. The base includes an electrically conductive base housing that is electrically coupled with the shaft housing, and an electrically insulating terminal block disposed within the base housing, the plurality of connectors passing through the terminal block.

4. 发明申请

US20160225652A1 LOW TEMPERATURE CHUCK FOR PLASMA PROCESSING SYSTEMS 审中-公开
标题翻译：等离子体加工系统的低温冲击
公开(公告)号：US20160225652A1
公开(公告)日：2016-08-04
申请号：US14612857
申请日：2015-02-03
申请人： Applied Materials, Inc.
发明人： Toan Q. Tran , Zilu Weng , Dmitry Lubomirsky , Satoru Kobayashi , Tae Seung Cho , Soonam Park , Son M. Phi , Shankar Venkataraman
IPC分类号： H01L21/683 , H01L21/3065 , H01L21/67
CPC分类号： H01L21/67069 , H01L21/3065 , H01L21/31116 , H01L21/31138 , H01L21/67103 , H01L21/67248 , H01L21/6831 , H01L21/68757 , H01L21/68785 , H01L21/68792
摘要： A wafer chuck assembly includes a puck, a shaft and a base. The puck includes an electrically insulating material that defines a top surface of the puck; a plurality of electrodes are embedded within the electrically insulating material. The puck also includes an inner puck element that forms one or more channels for a heat exchange fluid, the inner puck element being in thermal communication with the electrically insulating material, and an electrically conductive plate disposed proximate to the inner puck element. The shaft includes an electrically conductive shaft housing that is electrically coupled with the plate, and a plurality of connectors, including electrical connectors for the electrodes. The base includes an electrically conductive base housing that is electrically coupled with the shaft housing, and an electrically insulating terminal block disposed within the base housing, the plurality of connectors passing through the terminal block.
摘要翻译：晶片卡盘组件包括圆盘，轴和基座。圆盘包括限定冰球顶表面的电绝缘材料; 多个电极嵌入电绝缘材料内。该圆盘还包括内部圆盘元件，其形成用于热交换流体的一个或多个通道，内部圆盘元件与电绝缘材料热连通，以及设置在靠近内部圆锥元件的导电板。所述轴包括与所述板电耦合的导电轴壳体，以及包括用于所述电极的电连接器的多个连接器。基座包括与轴壳体电耦合的导电基座壳体，以及设置在基座壳体内的电绝缘接线块，多个连接器穿过接线端子。

5. 发明授权

US11476093B2 Plasma etching systems and methods with secondary plasma injection 有权
公开(公告)号：US11476093B2
公开(公告)日：2022-10-18
申请号：US16704387
申请日：2019-12-05
申请人： Applied Materials, Inc.
发明人： Toan Q. Tran , Soonam Park , Zilu Weng , Dmitry Lubomirsky
IPC分类号： H01J37/32
摘要： An apparatus for plasma processing includes a first plasma source, a first planar electrode, a gas distribution device, a plasma blocking screen and a workpiece chuck. The first plasma source produces first plasma products that pass, away from the first plasma source, through first apertures in the first planar electrode. The first plasma products continue through second apertures in the gas distribution device. The plasma blocking screen includes a third plate with fourth apertures, and faces the gas distribution device such that the first plasma products pass through the plurality of fourth apertures. The workpiece chuck faces the second side of the plasma blocking screen, defining a process chamber between the plasma blocking screen and the workpiece chuck. The fourth apertures are of a sufficiently small size to block a plasma generated in the process chamber from reaching the gas distribution device.

6. 发明授权

US10504700B2 Plasma etching systems and methods with secondary plasma injection 有权
公开(公告)号：US10504700B2
公开(公告)日：2019-12-10
申请号：US14838086
申请日：2015-08-27
申请人： Applied Materials, Inc.
发明人： Toan Q. Tran , Soonam Park , Zilu Weng , Dmitry Lubomirsky
IPC分类号： C23C16/00 , H01J37/32
CPC分类号： H01J37/3244 , H01J37/32082 , H01J37/32357 , H01J37/32532 , H01J37/32715
摘要： An apparatus for plasma processing includes a first plasma source, a first planar electrode, a gas distribution device, a plasma blocking screen and a workpiece chuck. The first plasma source produces first plasma products that pass, away from the first plasma source, through first apertures in the first planar electrode. The first plasma products continue through second apertures in the gas distribution device. The plasma blocking screen includes a third plate with fourth apertures, and faces the gas distribution device such that the first plasma products pass through the plurality of fourth apertures. The workpiece chuck faces the second side of the plasma blocking screen, defining a process chamber between the plasma blocking screen and the workpiece chuck. The fourth apertures are of a sufficiently small size to block a plasma generated in the process chamber from reaching the gas distribution device.

7. 发明授权

US11594428B2 Low temperature chuck for plasma processing systems 有权
公开(公告)号：US11594428B2
公开(公告)日：2023-02-28
申请号：US15581497
申请日：2017-04-28
申请人： Applied Materials, Inc.
发明人： Toan Q. Tran , Zilu Weng , Dmitry Lubomirsky , Satoru Kobayashi , Tae Seung Cho , Soonam Park , Son M. Phi , Shankar Venkataraman
IPC分类号： H01L21/67 , H01L21/3065 , H01L21/683 , H01L21/687 , H01L21/311 , H01J37/32
摘要： A wafer chuck assembly includes a puck, a shaft and a base. The puck includes an electrically insulating material that defines a top surface of the puck; a plurality of electrodes are embedded within the electrically insulating material. The puck also includes an inner puck element that forms one or more channels for a heat exchange fluid, the inner puck element being in thermal communication with the electrically insulating material, and an electrically conductive plate disposed proximate to the inner puck element. The shaft includes an electrically conductive shaft housing that is electrically coupled with the plate, and a plurality of connectors, including electrical connectors for the electrodes. The base includes an electrically conductive base housing that is electrically coupled with the shaft housing, and an electrically insulating terminal block disposed within the base housing, the plurality of connectors passing through the terminal block.

8. 发明申请

US20170062184A1 PLASMA ETCHING SYSTEMS AND METHODS WITH SECONDARY PLASMA INJECTION 审中-公开
标题翻译：等离子体蚀刻系统和方法与二次等离子体注射
公开(公告)号：US20170062184A1
公开(公告)日：2017-03-02
申请号：US14838086
申请日：2015-08-27
申请人： APPLIED MATERIALS, INC.
发明人： Toan Q. Tran , Soonam Park , Zilu Weng , Dmitry Lubomirsky
IPC分类号： H01J37/32
CPC分类号： H01J37/3244 , H01J37/32082 , H01J37/32357 , H01J37/32532 , H01J37/32715
摘要： An apparatus for plasma processing includes a first plasma source, a first planar electrode, a gas distribution device, a plasma blocking screen and a workpiece chuck. The first plasma source produces first plasma products that pass, away from the first plasma source, through first apertures in the first planar electrode. The first plasma products continue through second apertures in the gas distribution device. The plasma blocking screen includes a third plate with fourth apertures, and faces the gas distribution device such that the first plasma products pass through the plurality of fourth apertures. The workpiece chuck faces the second side of the plasma blocking screen, defining a process chamber between the plasma blocking screen and the workpiece chuck. The fourth apertures are of a sufficiently small size to block a plasma generated in the process chamber from reaching the gas distribution device.
摘要翻译：一种等离子体处理装置，包括第一等离子体源，第一平面电极，气体分配装置，等离子体阻挡屏和工件卡盘。第一等离子体源产生通过第一等离子体源穿过第一平面电极中的第一孔的第一等离子体产物。第一等离子体产物继续通过气体分配装置中的第二孔。等离子体阻挡屏幕包括具有第四孔的第三板，面向气体分配装置，使得第一等离子体产物通过多个第四孔。工件卡盘面对等离子体阻挡屏幕的第二侧，在等离子体阻挡屏幕和工件卡盘之间限定一个处理室。第四孔具有足够小的尺寸以阻挡在处理室中产生的等离子体到达气体分配装置。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式