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    • 9. 发明授权
    • Array substrate and its manufacturing method
    • 阵列基板及其制造方法
    • US09059293B2
    • 2015-06-16
    • US13967536
    • 2013-08-15
    • BOE TECHNOLOGY GROUP CO., LTD.
    • Tao GaoZhijun LvTailiang Li
    • H01L29/786H01L27/12
    • H01L29/78642H01L27/1214H01L29/786H01L29/78663
    • An array substrate comprises a substrate, a gate electrode, a source electrode and a drain electrode, the source electrode and the drain electrode being provided in different areas on the substrate and the vertical projections of the source electrode and the drain electrode on the substrate having an overlapping area; a semiconductor layer formed between the source electrode and the drain electrode, a vertical projection of the semiconductor layer on the substrate having overlapping areas with the vertical projections of the source electrode and the drain electrode on the substrate; a first insulating layer formed on the substrate while below the gate electrode and covering the source electrode or the drain electrode; a pixel electrode, a gate line, and a data line. A manufacturing method for the array substrate is also disclosed.
    • 阵列基板包括基板,栅电极,源电极和漏电极,源电极和漏电极设置在基板上的不同区域中,并且源电极和漏电极的垂直突起在基板上具有 重叠区域; 形成在源电极和漏电极之间的半导体层,衬底上的半导体层的垂直投影,其具有与源电极和漏电极的垂直突起重叠的区域; 第一绝缘层,形成在所述基板上,同时在所述栅电极下方并覆盖所述源电极或所述漏极; 像素电极,栅极线和数据线。 还公开了阵列基板的制造方法。