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    • 10. 发明授权
    • Cold cathode electron source
    • 冷阴极电子源
    • US06882098B2
    • 2005-04-19
    • US10223625
    • 2002-08-20
    • Young-Chul ChoiJi-Hoon AhnHyek-Bok RheeDong-Hee Han
    • Young-Chul ChoiJi-Hoon AhnHyek-Bok RheeDong-Hee Han
    • H01J1/312H01J1/304H01J3/02H01J9/02H01J1/62
    • B82Y10/00H01J1/3042H01J3/022H01J9/025H01J2201/30469
    • The present invention provides a cold cathode electron source and a method for manufacturing the cold cathode electron source. The cold cathode electron source includes a substrate on which are deposited a catalyst metal layer, an insulation layer, and a gate metal layer; a cavity section formed through the catalyst metal layer, the insulation layer, and the gate metal layer; and an emitter realized through a plurality of carbon nanotubes, which are grown from walls of the catalyst metal layer exposed in the cavity section and which have long axes parallel to the substrate. The method includes depositing a catalyst metal layer, an insulation layer, and a gate metal layer on a substrate; forming a cavity section by removing a portion of the gate metal layer, the insulation layer, and the catalyst metal layer using a photolithography process; and forming an emitter by mounting the substrate on a chemical vapor deposition reactor and growing carbon nanotubes in a low temperature atmosphere of 500˜800 degrees Celsius (° C.).
    • 本发明提供一种冷阴极电子源及其制造方法。 冷阴极电子源包括沉积有催化剂金属层,绝缘层和栅极金属层的基板; 通过催化剂金属层,绝缘层和栅极金属层形成的空腔部分; 以及通过多个碳纳米管实现的发射体,其从暴露在空腔部分中的具有平行于衬底的长轴的催化剂金属层的壁生长。 该方法包括在衬底上沉积催化剂金属层,绝缘层和栅极金属层; 通过使用光刻工艺去除栅极金属层,绝缘层和催化剂金属层的一部分来形成空腔部分; 并通过将基板安装在化学气相沉积反应器上并在500〜800摄氏度(℃)的低温气氛中生长碳纳米管而形成发射体。