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1. 发明授权

US08878618B2 Spin transfer oscillator 有权
标题翻译：自旋转移振荡器
公开(公告)号：US08878618B2
公开(公告)日：2014-11-04
申请号：US13702413
申请日：2011-06-09
申请人： Claire Baraduc , Bernard Dieny , Christophe Thirion , Nicolas De Mestier Du Bourg
发明人： Claire Baraduc , Bernard Dieny , Christophe Thirion , Nicolas De Mestier Du Bourg
IPC分类号： H03B15/00 , H01F10/32 , H03B28/00 , B82Y25/00
CPC分类号： H03B28/00 , B82Y25/00 , H01F10/32 , H01F10/3254 , H01F10/3259 , H01F10/3268 , H03B15/006
摘要： A spin transfer oscillator including a magnetic stack including at least two magnetic layers, at least one of the two magnetic layers is an oscillating layer that has variable direction magnetization and a current supply device configured to cause the flow of a current of electrons perpendicularly to the plane of the magnetic stack. The magnetic stack includes a device to generate inhomogeneities of current at the level of the surface of the oscillating layer and the intensity of the current supplied by the supply device is selected such that the magnetization of the oscillating layer has a consistent magnetic configuration, the magnetic configuration oscillating as a whole at the same fundamental frequency.
摘要翻译：一种包括具有至少两个磁性层的磁性堆叠的自旋转移振荡器，所述两个磁性层中的至少一个是具有可变方向磁化的振荡层，以及电流供给装置，其被配置为使电子流的电流垂直于磁栈的平面。磁性堆叠包括在振荡层的表面的电平上产生电流的不均匀性的装置，并且选择由供电装置提供的电流的强度，使得振荡层的磁化具有一致的磁性结构，磁性配置整体振荡在同一基频。

2. 发明授权

US08208295B2 Heat assisted magnetic write element 有权
标题翻译：热辅助磁写元件
公开(公告)号：US08208295B2
公开(公告)日：2012-06-26
申请号：US12905346
申请日：2010-10-15
申请人： Bernard Dieny
发明人： Bernard Dieny
IPC分类号： G11C11/14
CPC分类号： G11C11/16 , B82Y25/00 , H01F10/3254 , H01F10/3263 , H01F10/3272 , H01F10/3286 , H01L27/222 , H01L43/08
摘要： A magnetic element for writing by thermally assisted magnetic field or thermally assisted spin transfer comprises a stack consisting of a free magnetic layer, also called storage layer or switchable magnetization layer, of which the magnetization direction is switchable between two nonwrite stable states, both directed out-of-plane and substantially perpendicular to the plane of said layer, and of which the magnetization is spontaneously reoriented from substantially perpendicular to the plane to substantially in the plane under the effect of the rise in temperature during the writing, at least one reference magnetic layer, called pinned layer, of which the magnetization is oriented substantially perpendicular to the plane of said layer, a nonmagnetic spacer inserted between the two layers and means for making an electric current flow perpendicular to the plane of said layers.
摘要翻译：用于通过热辅助磁场或热辅助自旋转移进行写入的磁性元件包括由自由磁性层（也称为存储层或可切换磁化层）构成的堆叠，其磁化方向可在两个非写入稳定状态之间切换并且基本上垂直于所述层的平面，并且其在写入期间在温度升高的作用下，从基本上垂直于该平面到基本上在该平面中自发地重新定向磁化，至少一个参考磁被称为钉扎层，其磁化方向基本上垂直于所述层的平面，插入在两个层之间的非磁性隔离物和用于使电流流动垂直于所述层的平面的装置。

3. 发明授权

US08102703B2 Magnetic element with a fast spin transfer torque writing procedure 有权
标题翻译：具有快速自旋传递扭矩写入程序的磁性元件
公开(公告)号：US08102703B2
公开(公告)日：2012-01-24
申请号：US12502467
申请日：2009-07-14
申请人： Jean-Pierre Nozières , Bernard Dieny
发明人： Jean-Pierre Nozières , Bernard Dieny
IPC分类号： G11C11/15
CPC分类号： G11C11/161
摘要： A magnetic tunnel junction, including a reference layer having a fixed magnetization direction, a first storage layer having a magnetization direction that is adjustable relative to the magnetization direction of the reference layer by passing a write current through said magnetic tunnel junction, and an insulating layer disposed between said reference layer and first storage layer; characterized in that the magnetic tunnel junction further comprises a polarizing device to polarize the spins of the write current oriented perpendicular with the magnetization direction of the reference layer; and wherein said first storage layer has a damping constant above 0.02. A magnetic memory device formed by assembling an array of the magnetic tunnel junction can be fabricated resulting in lower power consumption.
摘要翻译：包括具有固定磁化方向的参考层的磁性隧道结，具有通过使写入电流通过所述磁性隧道结而相对于参考层的磁化方向可调节的磁化方向的第一存储层和绝缘层设置在所述参考层和第一存储层之间; 其特征在于，所述磁性隧道结还包括偏振装置，用于使写入电流的自旋极化，所述写入电流的自旋垂直于参考层的磁化方向; 并且其中所述第一存储层具有高于0.02的阻尼常数。可以制造通过组装磁性隧道结的阵列而形成的磁存储器件，从而降低功耗。

4. 发明申请

US20110200434A1 MAGNETIC MICROPARTICLE AND METHOD FOR MANUFACTURING SUCH A MICROPARTICLE 有权
标题翻译：磁性微波和制造这种微波的方法
公开(公告)号：US20110200434A1
公开(公告)日：2011-08-18
申请号：US13060662
申请日：2010-09-17
申请人： Bernard Dieny , Hélène Joisten , Philippe Sabon
发明人： Bernard Dieny , Hélène Joisten , Philippe Sabon
IPC分类号： F03G7/00 , B29C41/02
CPC分类号： B81C1/0019 , A61B1/00156 , B81B2201/038 , B81B2201/06 , B81C2201/038
摘要： A microparticle includes an oblong flexible tail able to propel the microparticle in a solution along a trajectory using beats transverse to the trajectory, the tail including at least one magnetic element such that the magnetic element causes beats of the tail under the action of an external alternating magnetic field non-collinear with the trajectory and a head mechanically connected to a proximal end of the tail. The microparticle includes at least one layer of material formed from one piece and including the tail and the head, the dimensions and/or shape of the head being selected such that the beats of the proximal end of the tail are limited with respect to the beats of the distal end of the tail and such that the head does not perform a complete revolution around an axis parallel to the trajectory under the effect of the external alternating magnetic field.
摘要翻译：微粒包括长方形柔性尾部，其能够使用横向于轨迹的搏动沿着轨迹将微粒推进到溶液中，尾部包括至少一个磁性元件，使得磁性元件在外部交替作用下引起尾巴的打击与轨迹非共线的磁场和机械连接到尾端近端的磁头。微粒包括至少一层材料，其由一个部件形成并包括尾部和头部，头部的尺寸和/或形状被选择为使得尾部的近端的节拍相对于节拍被限制并且使得头部在外部交变磁场的作用下不围绕平行于轨迹的轴线执行完整的旋转。

5. 发明授权

US07898833B2 Magnetic element with thermally-assisted writing 有权
标题翻译：具有热辅助写入功能的磁性元件
公开(公告)号：US07898833B2
公开(公告)日：2011-03-01
申请号：US12269918
申请日：2008-11-13
申请人： Lucian Prejbeanu , Cécile Maunoury , Bernard Dieny , Clarisse Ducruet , Ricardo Sousa
发明人： Lucian Prejbeanu , Cécile Maunoury , Bernard Dieny , Clarisse Ducruet , Ricardo Sousa
IPC分类号： G11C15/02
CPC分类号： G11C11/16 , G11C11/1675 , H01L27/228 , H01L43/10
摘要： A magnetic element with thermally-assisted writing using a field or spin transfer provided, including a magnetic reference layer referred to as the “trapped layer,” the magnetization of which is in a fixed direction, and a magnetic storage layer called the “free layer” having a variable magnetization direction and consisting of a layer made of a ferromagnetic material with magnetization in the plane of the layer and magnetically coupled to a magnetization-trapping layer made of an antiferromagnetic material. A semiconductor or an insulating layer with confined-current-paths is sandwiched between the reference layer and the storage layer. At least one bilayer, consisting respectively of an amorphous or quasi-amorphous material and a material having the same structure or the same crystal lattice as the antiferromagnetic layer, is provided in the storage layer between ferromagnetic layer, which is in contact with the semiconductor or insulating layer with confined-current-paths, and antiferromagnetic layer.
摘要翻译：一种具有使用场或自旋转移的热辅助写入的磁性元件，包括被称为被捕获层的磁性参考层，其磁化在固定的方向，以及称为“自由层 “具有可变的磁化方向，并由由铁磁材料制成的层组成，在层的平面内具有磁化，并且磁耦合到由反铁磁材料制成的磁化捕获层。具有限制电流路径的半导体或绝缘层被夹在参考层和存储层之间。在与半导体接触的铁磁层之间的存储层中设置至少一个双层，其分别由非晶或准非晶材料构成，以及具有与反铁磁性层相同结构或相同晶格的材料，具有限流路径的绝缘层和反铁磁层。

6. 发明授权

US07830640B2 Spin valve magnetoresistive device with conductive-magnetic material bridges in a dielectric or semiconductor layer alternatively of magnetic material 有权
标题翻译：具有导电磁性材料的自旋阀磁阻器件在磁性材料的电介质或半导体层中桥接
公开(公告)号：US07830640B2
公开(公告)日：2010-11-09
申请号：US12271734
申请日：2008-11-14
申请人： Bernard Dieny , Bernard Rodmacq , Franck Ernult
发明人： Bernard Dieny , Bernard Rodmacq , Franck Ernult
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/3903 , G11C11/161 , H01F10/3254 , H01F41/307 , H01L43/08 , Y10T29/49044
摘要： Magnetoresistive device comprising a spin valve formed from a stack of layers including at least two magnetic layers for which a relative orientation of their magnetisation directions are capable varying under influence of a magnetic field; at least one discontinuous dielectric or semiconducting layer with electrically conducting bridges at least partially passing through a thickness of the dielectric or semiconducting layer, the bridges configured to locally concentrate current that passes transversely through the stack; and means for circulating a current in the spin valve transverse to the plane of the layers, characterised in that the dielectric or semiconducting layer with electrically conducting bridges is arranged inside one of the magnetic layers.
摘要翻译：磁阻器件包括由包括至少两个磁性层的层叠层形成的自旋阀，其磁化方向的相对取向能够在磁场的影响下变化; 至少一个不连续的电介质或半导电层，其具有至少部分地穿过电介质或半导体层的厚度的导电桥，所述桥被配置为局部集中横穿所述叠层的电流; 以及用于使旋转阀中的电流横向于层的平面循环的装置，其特征在于具有导电桥的电介质层或半导电层布置在一个磁层内。

7. 发明申请

US20080151615A1 MAGNETIC MULTILAYER DEVICE, METHOD FOR PRODUCING SUCH A DEVICE, MAGNETIC FIELD SENSOR, MAGNETIC MEMORY AND LOGIC GATE USING SUCH A DEVICE 有权
标题翻译：磁性多层器件，用于制造这样的器件的方法，磁场传感器，使用这种器件的磁性存储器和逻辑门
公开(公告)号：US20080151615A1
公开(公告)日：2008-06-26
申请号：US11959816
申请日：2007-12-19
申请人： Bernard Rodmacq , Stephane Auffret , Bernard Dieny , Jerome Moritz
发明人： Bernard Rodmacq , Stephane Auffret , Bernard Dieny , Jerome Moritz
IPC分类号： G11C11/15 , H01F7/02 , C23C14/34
CPC分类号： H01F10/3236 , B82Y25/00 , B82Y40/00 , G01R33/0322 , G01R33/0325 , G01R33/07 , G01R33/093 , G11C11/18 , G11C11/5607 , H01F10/30 , H01F10/3254 , H01F10/3286 , H01F41/18 , H01F41/30 , H01L43/06 , H01L43/10 , H01L43/14 , Y10T428/115
摘要： This magnetic multilayer device comprises, on a substrate, an alternating sequence of magnetic metallic layers M and oxide, hydride or nitride layers O. The number of layers M equals at least two. The layers M are continuous. There is interfacial magnetic anisotropy perpendicular to the plane of the layers at the level of the M/O interfaces.
摘要翻译：该磁性多层器件在衬底上包括磁性金属层M和氧化物，氢化物或氮化物层O的交替序列。层数M等于至少两个。层M是连续的。在M / O界面的水平上，垂直于层平面的界面磁各向异性。

8. 发明申请

US20080031035A1 THIN-FILM MAGNETIC DEVICE WITH STRONG SPIN POLARISATION PERPENDICULAR TO THE PLANE OF THE LAYERS, MAGNETIC TUNNEL JUNCTION AND SPIN VALVE USING SUCH A DEVICE 有权
标题翻译：具有强大旋转极化的薄膜磁性装置，使用这种装置对层的平面，磁性隧道结和旋转阀
公开(公告)号：US20080031035A1
公开(公告)日：2008-02-07
申请号：US11833336
申请日：2007-08-03
申请人： Bernard RODMACQ , Bernard Dieny
发明人： Bernard RODMACQ , Bernard Dieny
IPC分类号： G11C11/14
CPC分类号： G01R33/1284 , B82Y25/00 , G01R33/093 , G11C11/161 , H01F10/30 , H01F10/3236 , H01F10/3254 , H01F10/3268 , H01F10/3286 , H03B15/006 , Y10T428/1121
摘要： A thin-film magnetic device comprises, on a substrate, a composite assembly deposited by cathode sputtering and consists of a first layer made of a ferromagnetic material with a high rate of spin polarisation, the magnetisation of which is in plane in the absence of any electric or magnetic interaction, a second layer made of a magnetic material with high perpendicular anisotropy, the magnetisation of which is outside the plane of said layer in the absence of any electric or magnetic interaction, and coupling of which with said first layer induces a decrease in the effective demagnetising field of the entire device, a third layer that is in contact with the first layer via its interface opposite to that which is common to the second layer and made of a material that is not magnetic and not polarising for electrons passing through the device.
摘要翻译：薄膜磁性器件在衬底上包括通过阴极溅射沉积的复合组件，其由具有高自旋极化率的铁磁材料制成的第一层组成，其磁化在没有任何电或磁相互作用，由具有高垂直各向异性的磁性材料制成的第二层，其磁化在不存在任何电或磁相互作用的情况下在所述层的平面外部，并且与第一层的耦合引起减小在整个装置的有效去磁场中，第三层通过其与第二层共有的界面相反的界面与第一层接触，并且由不是磁性的材料制成，并且对于通过的电子不偏振装置。

9. 发明申请

US20060291276A1 Magnetic memory with a magnetic tunnel junction written in a thermally assisted manner, and method for writing the same 有权
标题翻译：具有以热辅助方式写入的磁性隧道结的磁存储器及其写入方法
公开(公告)号：US20060291276A1
公开(公告)日：2006-12-28
申请号：US11483425
申请日：2006-07-07
申请人： Jean-Pierre Nozieres , Bernard Dieny , Olivier Redon , Ricardo Sousa , Ioan-Lucian Prejbeanu
发明人： Jean-Pierre Nozieres , Bernard Dieny , Olivier Redon , Ricardo Sousa , Ioan-Lucian Prejbeanu
IPC分类号： G11C11/14
CPC分类号： G11C11/16 , G11C11/1675 , G11C11/5607
摘要： The invention relates to a magnetic memory written in a thermally assisted manner, each memory point (40) consisting of a magnetic tunnel junction, and the cross-section of the memory parallel to the plane of the layers forming the tunnel junction being circular or essentially circular. Said tunnel junction comprises at least one trapped layer (44) with a fixed magnetisation direction, a free layer (42) with a variable magnetisation direction, and an insulating layer (43) arranged between the free layer (42) and the trapped layer (44). According to the invention, the free layer (42) is formed from at least one soft magnetic layer and a trapped layer (41), said two layers being magnetically coupled by contact, and the operating temperature of the reading memory or resting memory is selected in such a way that it is lower than the blocking temperature of the respectively free and trapped layers.
摘要翻译：本发明涉及以热辅助方式写入的磁存储器，每个存储点（40）由磁性隧道结组成，并且存储器的横截面平行于形成隧道结的层的平面为圆形或基本上圆。所述隧道结包括具有固定磁化方向的至少一个捕获层（44），具有可变磁化方向的自由层（42）和布置在所述自由层（42）和所述被俘获层之间的绝缘层（43） 44）。根据本发明，自由层（42）由至少一个软磁层和捕获层（41）形成，所述两层通过接触磁耦合，并且选择读取存储器或休息存储器的工作温度使其低于分别游离和捕获的层的阻挡温度。

10. 发明申请

US20060281258A1 Magnetic tunnel junction device and writing/reading method for said device 审中-公开
标题翻译：所述装置的磁隧道结装置和写/读方法
公开(公告)号：US20060281258A1
公开(公告)日：2006-12-14
申请号：US10572906
申请日：2004-10-06
申请人： Bernard Dieny , Ricardo Sousa , Dana Stanescu
发明人： Bernard Dieny , Ricardo Sousa , Dana Stanescu
IPC分类号： H01L21/336 , H01L29/94
CPC分类号： H01L43/08 , G11C11/16
摘要： The device successively comprises a first electrode (12), a magnetic reference layer (1), a tunnel barrier (3), a magnetic storage layer (4) and a second electrode (13). At least one first thermal barrier is arranged between the storage layer (4) and the second electrode (13) and is formed by a material having a thermal conductivity lower than 5 W/m/° C. A second thermal barrier can be formed by a layer arranged between the first electrode (12) and the reference layer (1). A write phase of the method comprises flow of an electric current (11), through the tunnel junction, from the storage layer (4) to the reference layer (1), whereas a read phase comprises flow of an electric current (12) in the opposite direction.
摘要翻译：该装置依次包括第一电极（12），磁参考层（1），隧道势垒（3），磁存储层（4）和第二电极（13）。至少一个第一热障被布置在存储层（4）和第二电极（13）之间，并且由导热率低于5W / m /℃的材料形成。第二热障可以通过布置在第一电极（12）和参考层（1）之间的层。该方法的写入阶段包括通过隧道结从存储层（4）到参考层（1）的电流（11）的流动，而读取阶段包括电流（12）的流动相反的方向。

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