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1. 发明授权

US09224495B2 Nonvolatile memory device and method detecting defective word line 有权
标题翻译：非易失性存储器件和方法检测有缺陷的字线
公开(公告)号：US09224495B2
公开(公告)日：2015-12-29
申请号：US14476151
申请日：2014-09-03
申请人： Bong-Kil Jung , Daeseok Byeon
发明人： Bong-Kil Jung , Daeseok Byeon
IPC分类号： G11C16/34 , G11C16/04
CPC分类号： G11C16/3459 , G11C8/08 , G11C16/0483 , G11C29/025 , G11C2029/1202
摘要： The inventive concept relates to a nonvolatile memory device and a method of detecting a defective word line. The method includes executing a defective word line detection operation using a program/erase voltage applied to a selected word line, wherein the defective word line detection operation determines whether or not the selected word line is defective in relation to respective word line voltage responses for the first and second segments during execution of the program/erase operation.
摘要翻译：本发明构思涉及非易失性存储器件和检测缺陷字线的方法。该方法包括使用施加到所选字线的编程/擦除电压来执行有缺陷的字线检测操作，其中，缺陷字线检测操作确定所选择的字线是否相对于相应的字线电压响应有缺陷执行程序/擦除操作期间的第一和第二段。

2. 发明授权

US10120589B2 Method of adjusting read voltages applied by a nonvolatile memory device using information stored by a read history table 有权
公开(公告)号：US10120589B2
公开(公告)日：2018-11-06
申请号：US14881182
申请日：2015-10-13
申请人： Bong-Kil Jung
发明人： Bong-Kil Jung
IPC分类号： G06F12/00 , G06F3/06 , G06F11/00 , G06F11/07 , G06F11/16 , G06F11/10
摘要： An operating method of a nonvolatile memory system includes receiving a read request for at least one page from a host. Upon receiving the read request, read voltages are adjusted using a read history table to perform a first read operation in which data stored at the nonvolatile memory is read. An optimal read voltage set is detected when data read according to the first read operation includes an uncorrectable error, and a second read operation is performed in which the stored data is read based on the detected optimal read voltage set. The read history table is updated based on a reliability parameter indicating a characteristic of the nonvolatile memory, a characteristic of the data at the first or second read operation, the optimal read voltage, or the read history table.

3. 发明授权

US09230669B2 Memory system and method of operation thereof 有权
标题翻译：存储系统及其操作方法
公开(公告)号：US09230669B2
公开(公告)日：2016-01-05
申请号：US14154641
申请日：2014-01-14
申请人： Bong-Kil Jung , Hyung-Gon Kim , Dae-Seok Byeon
发明人： Bong-Kil Jung , Hyung-Gon Kim , Dae-Seok Byeon
IPC分类号： G11C11/34 , G11C16/04 , G11C16/26 , G11C16/24 , G11C29/04 , G06F11/10
CPC分类号： G11C16/26 , G06F11/1048 , G11C16/24 , G11C29/04 , G11C2029/0409 , G11C2029/0411
摘要： A method of operating a memory system including a non-volatile memory device and a memory controller controlling the non-volatile memory device, includes reading data from a memory cell array in a unit of a page which includes a plurality of sectors; performing error correction decoding on the read data in a unit of a sector of the page; selecting at least one target sector which includes at least one uncorrectable error and selecting at least one pass sector wherein all errors of the pass sector are correctable by the error correction decoding; inhibiting precharging of bit-lines connected to the at least one pass sector while precharging target bit lines connected to the at least one target sector; and performing a read retry operation for data in the at least one target sector.
摘要翻译：一种操作包括非易失性存储器件和控制非易失性存储器件的存储器控制器的存储器系统的方法，包括以包括多个扇区的页为单位从存储器单元阵列读取数据; 对页面的扇区的单位对读取的数据执行纠错解码; 选择至少一个目标扇区，其包括至少一个不可校正的误差并选择至少一个通过扇区，其中所述通过扇区的所有错误可通过所述纠错解码来校正; 禁止连接到所述至少一个通过扇区的位线的预充电，同时对连接到所述至少一个目标扇区的目标位线进行预充电; 以及对所述至少一个目标扇区中的数据执行读取重试操作。

4. 发明授权

US09401215B2 Nonvolatile memory device and method for driving the same 有权
标题翻译：非易失性存储器件及其驱动方法
公开(公告)号：US09401215B2
公开(公告)日：2016-07-26
申请号：US14591438
申请日：2015-01-07
申请人： Bong-Kil Jung
发明人： Bong-Kil Jung
IPC分类号： G11C16/14 , G11C16/32 , G11C16/16 , G11C16/04 , G11C16/34 , G11C11/56
CPC分类号： G11C16/16 , G11C11/5635 , G11C16/0483 , G11C16/14 , G11C16/32 , G11C16/3445
摘要： A method for driving a nonvolatile memory device includes performing an erase operation with respect to a plurality of memory cells, stopping the erase operation by a suspend command, calculating a residual time of the erase operation that has not yet been performed, performing a first operation, comparing a first vacant time between a completion time point of the first operation and a start time point of a second operation with the residual time, performing the erase operation that has not yet been performed if the residual time is equal to or shorter than the first vacant time, and performing the second operation if the residual time is longer than the first vacant time.
摘要翻译：一种用于驱动非易失存储器件的方法包括对多个存储器单元执行擦除操作，通过暂停命令停止擦除操作，计算尚未执行的擦除操作的剩余时间，执行第一操作比较第一操作的完成时间点和第二操作的开始时间点与剩余时间之间的第一空闲时间，如果剩余时间等于或小于所述剩余时间，则执行尚未执行的擦除操作第一空闲时间，并且如果剩余时间长于第一空闲时间，则执行第二操作。

5. 发明授权

US10073643B2 Method of initializing storage device including one or more interface chips and nonvolatile memory devices connected to the one or more interface chips 有权
公开(公告)号：US10073643B2
公开(公告)日：2018-09-11
申请号：US15090806
申请日：2016-04-05
申请人： Bong-Kil Jung , Hyunggon Kim
发明人： Bong-Kil Jung , Hyunggon Kim
IPC分类号： G06F12/00 , G06F3/06 , G06F12/02
CPC分类号： G06F3/0632 , G06F3/0605 , G06F3/0658 , G06F3/0679 , G06F3/0688 , G06F12/0246 , G06F2212/2022 , G06F2212/72
摘要： A method of initializing a storage device includes; resetting an interface chip in response to a reset signal generated by the memory controller, loading a boot loader from a nonvolatile memory device via the interface chip in response to a nonvolatile memory initialization signal generated by the memory controller, and initializing a plurality of nonvolatile memory devices by executing the boot loader in the memory controller.

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