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1. 发明授权

US07678709B1 Method of forming low-temperature conformal dielectric films 有权
标题翻译：形成低温保形电介质膜的方法
公开(公告)号：US07678709B1
公开(公告)日：2010-03-16
申请号：US11881005
申请日：2007-07-24
申请人： Brian Lu , Wai-Fan Yau , Collin Mui , Bunsen Nie , Raihan Tarafdar
发明人： Brian Lu , Wai-Fan Yau , Collin Mui , Bunsen Nie , Raihan Tarafdar
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/02208 , C23C16/0272 , C23C16/401 , C23C16/45534 , H01L21/02205 , H01L21/0228 , H01L21/3121 , H01L21/76831 , H01L21/76837 , H01L21/76898
摘要： A deposition method modulates the reaction rate and thickness of highly conformal dielectric films deposited by forming a saturated catalytic layer on the surface and then exposing the surface to silicon-containing precursor gas and a reaction modulator, which may accelerate or quench the reaction. The modulator may be added before, after, or during exposure of the silicon-containing precursor gas. The film thickness after one cycle of deposition may be increased up to 20 times or decreased up to 20 times.
摘要翻译：沉积方法通过在表面上形成饱和催化剂层，然后将表面暴露于含硅前体气体和反应调节剂来调节沉积的高保形电介质膜的反应速率和厚度，这可能加速或淬灭反应。可以在含硅前体气体曝光之前，之后或暴露期间加入调节剂。沉积一个循环后的膜厚度可以增加到20倍或者降低到20倍。

2. 发明授权

US07482247B1 Conformal nanolaminate dielectric deposition and etch bag gap fill process 有权
标题翻译：保形纳米层压电介质沉积和回蚀间隙填充工艺
公开(公告)号：US07482247B1
公开(公告)日：2009-01-27
申请号：US11524502
申请日：2006-09-19
申请人： George D. Papasouliotis , Raihan M. Tarafdar , Ron Rulkins , Dennis M. Hausmann , Jeff Tobin , Adrianne K. Tipton , Bunsen Nie , Wai-Fan Yau , Brian G. Lu , Timothy M. Archer , Sasson Roger Somekh
发明人： George D. Papasouliotis , Raihan M. Tarafdar , Ron Rulkins , Dennis M. Hausmann , Jeff Tobin , Adrianne K. Tipton , Bunsen Nie , Wai-Fan Yau , Brian G. Lu , Timothy M. Archer , Sasson Roger Somekh
IPC分类号： H01L21/311
CPC分类号： H01L21/3141 , C23C16/045 , C23C16/44 , H01L21/02164 , H01L21/02214 , H01L21/0228 , H01L21/3105 , H01L21/31116 , H01L21/31608 , H01L21/76224 , H01L21/76837
摘要： Conformal nanolaminate dielectric deposition and etch back processes that can fill high aspect ratio (typically at least 5:1, for example 6:1), narrow width (typically sub 0.13 micron, for example 0.1 micron or less) gaps with significantly reduced incidence of voids or weak spots involve the use of any suitable confirmal dielectric deposition technique and a dry etch back. The etch back part of the process involves a single step or an integrated multi-step (for example, two-step) procedure including an anisotropic dry etch followed by an isotropic dry etch. The all dry deposition and etch back process in a single tool increases throughput and reduces handling of wafers resulting in more efficient and higher quality nanolaminate dielectric gap fill operations.
摘要翻译：可以满足高纵横比（通常至少5:1，例如6:1），窄宽度（通常为0.13微米，例如0.1微米或更小）的间隙的保形纳米酸盐电介质沉积和回蚀工艺，显着降低空隙或弱点涉及使用任何合适的确认电介质沉积技术和干法回蚀。该方法的回蚀部分涉及包括各向异性干法蚀刻以及各向同性干蚀刻的单步骤或集成多步骤（例如两步）程序。在单个工具中的全部干沉积和回蚀工艺增加了生产量并减少了晶片的处理，从而产生了更有效和更高质量的纳米层间介质间隙填充操作。

3. 发明授权

US07294583B1 Methods for the use of alkoxysilanol precursors for vapor deposition of SiO2 films 有权
标题翻译：使用烷氧基硅烷前体进行SiO 2气相沉积的方法
公开(公告)号：US07294583B1
公开(公告)日：2007-11-13
申请号：US11021558
申请日：2004-12-23
申请人： Ron Rulkens , George D. Papasouliotis , Dennis M. Hausmann , Raihan M. Tarafdar , Bunsen Nie , Adrianne K. Tipton , Jeff Tobin
发明人： Ron Rulkens , George D. Papasouliotis , Dennis M. Hausmann , Raihan M. Tarafdar , Bunsen Nie , Adrianne K. Tipton , Jeff Tobin
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/3141 , C23C16/401 , H01L21/02129 , H01L21/02145 , H01L21/02164 , H01L21/02214 , H01L21/02271 , H01L21/0228 , H01L21/31612
摘要： A method for depositing conformal dielectric films uses alkoxy silanol or silanediol precursors and oxidizing and/or hydrolyzing agents. The method produces a material with liquid-like flow properties capable of achieving improved high aspect ratio gap fill more efficiently than previous methods using alkoxysilanes since fewer oxidation reactions are required. In addition, the dielectric can be formed with or without a metal-containing catalyst/nucleation layer, so that metal content in the dielectric film can be avoided, if desired. Seams and voids are therefore avoided in gaps filled more efficiently with higher quality dielectric. In addition, the films as dense as deposited, reducing or eliminating the need for post-deposition processing (e.g., annealing).
摘要翻译：沉积保形介电膜的方法使用烷氧基硅烷醇或硅烷二醇前体和氧化和/或水解试剂。该方法产生具有液体流动特性的材料，其能够比使用烷氧基硅烷的先前方法更有效地实现改进的高纵横比间隙填充，因为需要更少的氧化反应。此外，如果需要，可以在含或不含金属的催化剂/成核层的情况下形成电介质，从而可以避免电介质膜中的金属含量。因此，在更高质量的电介质中更有效地填充的间隙中避免接缝和空隙。此外，这些薄膜像沉积一样密实，减少或消除了对沉积后处理（例如退火）的需要。

4. 发明授权

US07223707B1 Dynamic rapid vapor deposition process for conformal silica laminates 有权
标题翻译：用于保形二氧化硅层压板的动态快速蒸镀沉积工艺
公开(公告)号：US07223707B1
公开(公告)日：2007-05-29
申请号：US11027480
申请日：2004-12-30
申请人： George D. Papasouliotis , Jeff Tobin , Ron Rulkens , Dennis M. Hausmann , Adrianne K. Tipton , Raihan M. Tarafdar , Bunsen Nie
发明人： George D. Papasouliotis , Jeff Tobin , Ron Rulkens , Dennis M. Hausmann , Adrianne K. Tipton , Raihan M. Tarafdar , Bunsen Nie
IPC分类号： H01L21/00
CPC分类号： C23C16/45534 , C23C16/402 , C23C16/45529 , H01L21/02145 , H01L21/02164 , H01L21/02214 , H01L21/0228 , H01L21/3142 , H01L21/31612 , H01L21/3162 , H01L21/76837
摘要： A method for using ALD and RVD techniques in semiconductor manufacturing to produce a smooth nanolaminate dielectric film, in particular for filling structures with doped or undoped silica glass, uses dynamic process conditions. A dynamic process using variable substrate (e.g., wafer) temperature, reactor pressure and/or reactant partial pressure, as opposed to static process conditions through various cycles, can be used to minimize film roughness and improve gap fill performance and film properties via the elimination or reduction of seam occurrence. Overall film roughness can be reduced by operating the initial growth cycle under conditions which optimize film smoothness, and then switching to conditions that will enhance conformality, gap fill and film properties for the subsequent process cycles. Film deposition characteristics can be changed by modulating one or more of a number of process parameters including wafer temperature, reactor pressure, reactant partial pressure and combinations of these.
摘要翻译：在半导体制造中使用ALD和RVD技术来生产光滑的纳米层状电介质膜的方法，特别是用掺杂或未掺杂的石英玻璃填充结构的方法，使用动态工艺条件。可以使用与通过各种循环的静态工艺条件相反的使用可变衬底（例如，晶片）温度，反应器压力和/或反应物分压的动态过程来最小化膜粗糙度，并通过消除来改善间隙填充性能和膜性质或减少接缝发生。通过在优化膜平滑性的条件下操作初始生长周期，然后转换到将增强后续工艺循环的共形性，间隙填充和膜性能的条件，可以降低总膜的粗糙度。可以通过调制包括晶片温度，反应器压力，反应物分压以及它们的组合在内的多个工艺参数中的一个或多个来改变膜沉积特性。

5. 发明授权

US07790633B1 Sequential deposition/anneal film densification method 有权
标题翻译：顺序沉积/退火膜致密化方法
公开(公告)号：US07790633B1
公开(公告)日：2010-09-07
申请号：US11519445
申请日：2006-09-11
申请人： Raihan M. Tarafdar , George D. Papasouliotis , Ron Rulkens , Dennis M. Hausmann , Jeff Tobin , Adrianne K. Tipton , Bunsen Nie
发明人： Raihan M. Tarafdar , George D. Papasouliotis , Ron Rulkens , Dennis M. Hausmann , Jeff Tobin , Adrianne K. Tipton , Bunsen Nie
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/02351 , H01L21/02164 , H01L21/0228 , H01L21/02312 , H01L21/02315 , H01L21/02345 , H01L21/02348 , H01L21/02354 , H01L21/76224
摘要： A silicon dioxide-based dielectric layer is formed on a substrate surface by a sequential deposition/anneal technique. The deposited layer thickness is insufficient to prevent substantially complete penetration of annealing process agents into the layer and migration of water out of the layer. The dielectric layer is then annealed, ideally at a moderate temperature, to remove water and thereby fully densify the film. The deposition and anneal processes are then repeated until a desired dielectric film thickness is achieved.
摘要翻译：通过顺序沉积/退火技术在基板表面上形成二氧化硅基介电层。沉积层厚度不足以防止退火处理剂基本上完全渗透到层中并将水从层中迁移出来。然后将电介质层退火，理想地在中等温度下去除水，从而使膜完全致密化。然后重复沉积和退火处理，直到达到所需的电介质膜厚度。

6. 发明授权

US06576345B1 Dielectric films with low dielectric constants 失效
标题翻译：介电常数低的介电薄膜
公开(公告)号：US06576345B1
公开(公告)日：2003-06-10
申请号：US09727796
申请日：2000-11-30
申请人： Patrick A. Van Cleemput , Ravi Kumar Laxman , Jen Shu , Michelle T. Schulberg , Bunsen Nie
发明人： Patrick A. Van Cleemput , Ravi Kumar Laxman , Jen Shu , Michelle T. Schulberg , Bunsen Nie
IPC分类号： B32B2520
CPC分类号： C08G77/045 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/3122 , H01L21/76813 , Y02P20/544 , Y10S427/101 , Y10S428/902 , Y10T428/12396 , Y10T428/31663
摘要： Thin films possessing low dielectric constants (e.g., dielectric constants below 3.0) are formed on integrated circuits or other substrates. Caged-siloxane precursors are linked in such a way as to form dielectric layers, which exhibit low dielectric constants by virtue of their silicon dioxide-like molecular structure and porous nature. Supercritical fluids may be used as the reaction medium and developer both to the dissolve and deliver the caged-siloxane precursors and to remove reagents and byproducts from the reaction chamber and resultant porous film created.
摘要翻译：在集成电路或其它基板上形成具有低介电常数（例如介电常数低于3.0）的薄膜。笼式硅氧烷前体以形成电介质层的方式连接，其通过其二氧化硅样分子结构和多孔性质表现出低的介电常数。超临界流体可以用作反应介质和显影剂，以溶解和递送笼状硅氧烷前体，并从反应室中除去试剂和副产物，并产生所得到的多孔膜。

7. 发明授权

US07700155B1 Method and apparatus for modulation of precursor exposure during a pulsed deposition process 有权
标题翻译：在脉冲沉积过程中调制前体曝光的方法和装置
公开(公告)号：US07700155B1
公开(公告)日：2010-04-20
申请号：US10821092
申请日：2004-04-08
申请人： Francisco Juarez , Dennis Hausmann , Bunsen Nie , Teresa Pong , Adrianne Tipton , Patrick Van Cleemput
发明人： Francisco Juarez , Dennis Hausmann , Bunsen Nie , Teresa Pong , Adrianne Tipton , Patrick Van Cleemput
IPC分类号： C23C16/00
CPC分类号： C23C16/45523 , C23C16/45589
摘要： A method of depositing material on a substrate comprises providing a reactor with a reaction chamber having a first volume, and contacting a surface of a substrate in the reaction chamber with a first precursor at the first chamber volume to react with and deposit a first layer on the substrate. The method further includes enlarging the reaction chamber to a second, larger volume and removing undeposited first precursor and any excess reaction product to end reaction of the first precursor with the substrate.
摘要翻译：在衬底上沉积材料的方法包括提供具有第一体积的反应室的反应器，并且使反应室中的衬底的表面与第一室体积处的第一前体接触以与第一层反应并将第一层沉积在底物。该方法还包括将反应室扩大至第二较大体积并除去未沉积的第一前体和任何过量的反应产物以终止第一前体与基底的反应。

8. 发明授权

US07148155B1 Sequential deposition/anneal film densification method 有权
标题翻译：顺序沉积/退火膜致密化方法
公开(公告)号：US07148155B1
公开(公告)日：2006-12-12
申请号：US10975028
申请日：2004-10-26
申请人： Raihan M. Tarafdar , George D. Papasouliotis , Ron Rulkens , Dennis M. Hausmann , Jeff Tobin , Adrianne K. Tipton , Bunsen Nie
发明人： Raihan M. Tarafdar , George D. Papasouliotis , Ron Rulkens , Dennis M. Hausmann , Jeff Tobin , Adrianne K. Tipton , Bunsen Nie
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/31612 , H01L21/02164 , H01L21/0228 , H01L21/02337 , H01L21/0234 , H01L21/76224
摘要： A silicon dioxide-based dielectric layer is formed on a substrate surface by a sequential deposition/anneal technique. The deposited layer thickness is insufficient to prevent substantially complete penetration of annealing process agents into the layer and migration of water out of the layer. The dielectric layer is then annealed, ideally at a moderate temperature, to remove water and thereby fully densify the film. The deposition and anneal processes are then repeated until a desired dielectric film thickness is achieved.
摘要翻译：通过顺序沉积/退火技术在基板表面上形成二氧化硅基介电层。沉积层厚度不足以防止退火处理剂基本上完全渗透到层中并将水从层中迁移出来。然后将电介质层退火，理想地在中等温度下去除水，从而使膜完全致密化。然后重复沉积和退火处理，直到达到所需的电介质膜厚度。

9. 发明授权

US07129189B1 Aluminum phosphate incorporation in silica thin films produced by rapid surface catalyzed vapor deposition (RVD) 有权
标题翻译：通过快速表面催化气相沉积（RVD）制备的二氧化硅薄膜中的磷酸铝掺入
公开(公告)号：US07129189B1
公开(公告)日：2006-10-31
申请号：US10874808
申请日：2004-06-22
申请人： Dennis M. Hausmann , Adrianne K. Tipton , Bunsen Nie , George D. Papasouliotis , Ron Rulkens , Raihan M. Tarafdar
发明人： Dennis M. Hausmann , Adrianne K. Tipton , Bunsen Nie , George D. Papasouliotis , Ron Rulkens , Raihan M. Tarafdar
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/45553 , C23C16/40 , C23C16/45531 , C23C16/45534 , H01L21/314 , H01L21/3142 , H01L21/31608
摘要： An method employing atomic layer deposition (ALD) and rapid vapor deposition (RVD) techniques conformally deposits a dielectric material on small features of a substrate surface. The resulting dielectric film applies a phosphate-doped silicate film using atomic layer deposition (ALD) and rapid surface catalyzed vapor deposition (RVD). The method includes the following four principal operations: exposing a substrate surface to an aluminum-containing precursor gas to form a substantially saturated layer of aluminum-containing precursor on the substrate surface; exposing the substrate surface to a phosphate-containing precursor gas to form aluminum phosphate on the substrate surface; exposing the substrate surface to an aluminum-containing precursor gas to form a second substantially saturated layer of aluminum-containing precursor on the substrate surface; and exposing the substrate surface to a silicon-containing precursor gas to form the dielectric film. Generally an inert gas purge is employed between the introduction of reactant gases to remove byproducts and unused reactants. These operations can be repeated to deposit multiple layers of dielectric material until a desired dielectric thickness is achieved.
摘要翻译：使用原子层沉积（ALD）和快速气相沉积（RVD）技术的方法在基片表面的小特征上共同沉积介电材料。所得到的电介质膜使用原子层沉积（ALD）和快速表面催化气相沉积（RVD）来施加磷酸盐掺杂的硅酸盐膜。该方法包括以下四个主要操作：将衬底表面暴露于含铝前体气体，以在衬底表面上形成基本上饱和的含铝前体层; 将衬底表面暴露于含磷酸盐的前体气体以在衬底表面上形成磷酸铝; 将衬底表面暴露于含铝前体气体，以在衬底表面上形成第二基本饱和的含铝前体层; 并将衬底表面暴露于含硅前体气体以形成电介质膜。通常，在引入反应气体以除去副产物和未使用的反应物之间采用惰性气体吹扫。可以重复这些操作以沉积多层介电材料，直到达到所需的介电厚度。

10. 发明授权

US07097878B1 Mixed alkoxy precursors and methods of their use for rapid vapor deposition of SiO2 films 有权
标题翻译：混合烷氧基前体及其用于快速气相沉积SiO 2膜的方法
公开(公告)号：US07097878B1
公开(公告)日：2006-08-29
申请号：US10874814
申请日：2004-06-22
申请人： Ron Rulkens , Dennis M. Hausmann , Raihan M. Tarafdar , George D. Papasouliotis , Bunsen Nie , Adrianne K. Tipton , Jeff Tobin
发明人： Ron Rulkens , Dennis M. Hausmann , Raihan M. Tarafdar , George D. Papasouliotis , Bunsen Nie , Adrianne K. Tipton , Jeff Tobin
IPC分类号： C23C16/40 , C23C16/56
CPC分类号： C23C16/045 , C23C16/401 , C23C16/45525 , C23C16/45534 , C23C16/45553
摘要： A method employing rapid vapor deposition (RVD) deposits a dielectric material on small features of a substrate surface. The resulting dielectric film is thicker, faster growing, shows better gap fill performance and has improved film properties compared to films resulting from silicon precursors with identical alkoxy substituents on silicon. The method includes the following two principal operations: exposing a substrate surface to a metal-containing precursor gas to form a substantially saturated layer of metal-containing precursor on the substrate surface; and exposing the substrate surface to a mixed alkoxy-substituted silicon-containing precursor gas to form the dielectric film.
摘要翻译：使用快速蒸镀（RVD）的方法将介电材料沉积在衬底表面的小特征上。所得到的介电膜较厚，生长速度更快，显示出更好的间隙填充性能，并且与硅上具有相同烷氧基取代基的硅前体产生的膜相比具有改进的膜性能。该方法包括以下两个主要操作：将衬底表面暴露于含金属前体气体，以在衬底表面上形成基本饱和的含金属前体层; 并将衬底表面暴露于混合的烷氧基取代的含硅前体气体以形成电介质膜。

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