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1. 发明申请

US20130244449A1 Methods and Apparatus For Patterning Photovoltaic Devices and Materials For Use With Such Devices 有权
标题翻译：用于图案化的光伏器件和材料用于这种器件的方法和装置
公开(公告)号：US20130244449A1
公开(公告)日：2013-09-19
申请号：US13820997
申请日：2011-09-06
申请人： Brian W. Baird , Timothy D. Gerke
发明人： Brian W. Baird , Timothy D. Gerke
IPC分类号： H01L31/18 , H01L21/78
CPC分类号： H01L31/0236 , B23K26/0624 , B23K26/0732 , B23K26/364 , B23K26/40 , B23K2103/172 , H01L21/268 , H01L21/78 , H01L31/046 , H01L31/0463 , H01L31/073 , H01L31/0749 , H01L31/18 , Y02E10/543
摘要： A picosecond laser beam shaping assembly is disclosed for shaping a picosecond laser beam for use in patterning (e.g., scribing) semiconductor devices. The assembly comprises a pulsed fibre laser source of picosecond laser pulses, a harmonic conversion element for converting laser pulses at a first laser wavelength having a first spectral bandwidth to laser pulses at a second laser wavelength having a second spectral bandwidth, and a beam shaping apparatus for shaping the laser beam at the second laser wavelength, the beam shaping apparatus having a spectral bandwidth that substantially corresponds to the second spectral bandwidth so as to produce a laser beam having a substantially rectangular cross-sectional profile.
摘要翻译：公开了一种皮秒激光束成形组件，用于成形用于图案化（例如划线）半导体器件的皮秒激光束。组件包括皮秒激光脉冲的脉冲光纤激光源，用于将具有第一光谱带宽的第一激光波长的激光脉冲转换成具有第二光谱带宽的第二激光波长的激光脉冲的谐波转换元件，以及光束成形设备为了在第二激光波长处成形激光束，光束成形装置具有基本对应于第二光谱带宽的光谱带宽，以便产生具有基本上矩形横截面轮廓的激光束。

2. 发明申请

US20130327389A1 Chalcopyrite -Type Semiconductor Photovoltaic Device 有权
标题翻译：黄铜矿型半导体光伏器件
公开(公告)号：US20130327389A1
公开(公告)日：2013-12-12
申请号：US13821009
申请日：2011-09-06
申请人： Brian W. Baird , Timothy D. Gerke
发明人： Brian W. Baird , Timothy D. Gerke
IPC分类号： H01L31/0236 , H01L31/18
CPC分类号： H01L31/0236 , B23K26/0624 , B23K26/0732 , B23K26/364 , B23K26/40 , B23K2103/172 , H01L21/268 , H01L21/78 , H01L31/046 , H01L31/0463 , H01L31/073 , H01L31/0749 , H01L31/18 , Y02E10/543
摘要： A method comprising providing a layer structure for a photovoltaic device, the layer structure comprising an electrode, a light absorber comprising a layer of chalcopyrite-type semiconductor material, such as copper indium gallium diselenide, disposed on the electrode and a transparent electrode disposed on the light absorber. The method also comprises delivering a spatially-shaped picosecond pulsed laser beam so as to remove material from a region of the transparent electrode so as to expose at least a portion of the light absorber.
摘要翻译：一种方法，包括提供用于光伏器件的层结构，所述层结构包括电极，设置在电极上的黄铜矿型半导体材料如铜铟镓二硒化物层的光吸收体和设置在电极上的透明电极光吸收器。该方法还包括递送空间形状的皮秒脉冲激光束，以从透明电极的区域去除材料，以暴露光吸收体的至少一部分。

3. 发明授权

US09425334B2 Methods and apparatus for patterning photovoltaic devices and materials for use with such devices 有权
标题翻译：用于图案化用于这种装置的光伏器件和材料的方法和装置
公开(公告)号：US09425334B2
公开(公告)日：2016-08-23
申请号：US13820997
申请日：2011-09-06
申请人： Brian W. Baird , Timothy D. Gerke
发明人： Brian W. Baird , Timothy D. Gerke
IPC分类号： H01L21/00 , H01L31/0236 , B23K26/073 , H01L21/268 , H01L31/073 , H01L31/0749 , H01L21/78 , H01L31/18 , H01L31/046 , H01L31/0463 , B23K26/40 , B23K26/06
CPC分类号： H01L31/0236 , B23K26/0624 , B23K26/0732 , B23K26/364 , B23K26/40 , B23K2103/172 , H01L21/268 , H01L21/78 , H01L31/046 , H01L31/0463 , H01L31/073 , H01L31/0749 , H01L31/18 , Y02E10/543
摘要： A picosecond laser beam shaping assembly is disclosed for shaping a picosecond laser beam for use in patterning (e.g., scribing) semiconductor devices. The assembly comprises a pulsed fibre laser source of picosecond laser pulses, a harmonic conversion element for converting laser pulses at a first laser wavelength having a first spectral bandwidth to laser pulses at a second laser wavelength having a second spectral bandwidth, and a beam shaping apparatus for shaping the laser beam at the second laser wavelength, the beam shaping apparatus having a spectral bandwidth that substantially corresponds to the second spectral bandwidth so as to produce a laser beam having a substantially rectangular cross-sectional profile.
摘要翻译：公开了一种皮秒激光束成形组件，用于成形用于图案化（例如划线）半导体器件的皮秒激光束。组件包括皮秒激光脉冲的脉冲光纤激光源，用于将具有第一光谱带宽的第一激光波长的激光脉冲转换成具有第二光谱带宽的第二激光波长的激光脉冲的谐波转换元件，以及光束成形设备为了在第二激光波长处成形激光束，光束成形装置具有基本对应于第二光谱带宽的光谱带宽，以便产生具有基本上矩形横截面轮廓的激光束。

4. 发明授权

US09306093B2 Chalcopyrite-type semiconductor photovoltaic device 有权
标题翻译：黄铜矿型半导体光伏器件
公开(公告)号：US09306093B2
公开(公告)日：2016-04-05
申请号：US13821009
申请日：2011-09-06
申请人： Brian W. Baird , Timothy D. Gerke
发明人： Brian W. Baird , Timothy D. Gerke
IPC分类号： H01L31/0352 , H01L31/0236 , B23K26/073 , H01L21/268 , H01L31/073 , H01L31/0749 , H01L21/78 , H01L31/18 , H01L31/046 , H01L31/0463 , B23K26/40
CPC分类号： H01L31/0236 , B23K26/0624 , B23K26/0732 , B23K26/364 , B23K26/40 , B23K2103/172 , H01L21/268 , H01L21/78 , H01L31/046 , H01L31/0463 , H01L31/073 , H01L31/0749 , H01L31/18 , Y02E10/543
摘要： A scribed photovoltaic device, comprising a photovoltaic device configured for generating electrical energy responsive to receiving solar radiation, the photovoltaic device comprising a plurality of electrically connected photovoltaic sections comprising a photovoltaic light absorbing chalcopyrite semiconductor region (“PLACS region”) disposed between first and second electrode regions. The photovoltaic sections can each comprise a scribe channel extending along and into two of the regions, wherein the scribe channel can comprise a pair of spaced opposing sidewalls of one of the regions, a pair of terraces comprising a pair of spaced opposing terrace shoulders, and a second pair of spaced opposing sidewalls of another one of the regions, with the spacing of the second pair of sidewalls being different than the spacing of the first pair of sidewalls. The spacing of the second pair of sidewalls can be less than the spacing of the first pair of sidewalls, and another one of the regions comprises the PLACS region.
摘要翻译：一种划刻的光伏器件，包括被配置为响应于接收太阳辐射产生电能的光伏器件，该光伏器件包括多个电连接的光伏部件，该光伏器件包括设置在第一和第二电极之间的光伏吸收黄铜矿半导体区域（“PLACS区域”）电极区域。光伏部分可以各自包括沿着并进入两个区域的划线通道，其中划线通道可以包括一对区域中的一个间隔开的相对的侧壁，一对梯田包括一对间隔开的相对的平台肩部，以及所述区域中另一个区域的第二对隔开的相对的侧壁，第二对侧壁的间隔与第一对侧壁的间隔不同。第二对侧壁的间隔可以小于第一对侧壁的间隔，并且另一个区域包括PLACS区域。

5. 再颁专利

USRE43605E1 Laser segmented cutting, multi-step cutting, or both 有权
标题翻译：激光分段切割，多步切割或两者兼容
公开(公告)号：USRE43605E1
公开(公告)日：2012-08-28
申请号：US12351562
申请日：2009-01-09
申请人： James N. O'Brien , Lian-Cheng Zou , Yunlong Sun , Kevin P. Fahey , Michael J. Wolfe , Brian W. Baird , Richard S. Harris
发明人： James N. O'Brien , Lian-Cheng Zou , Yunlong Sun , Kevin P. Fahey , Michael J. Wolfe , Brian W. Baird , Richard S. Harris
IPC分类号： B23K26/04 , C04B41/91
CPC分类号： B23K26/0622 , B23K26/032 , B23K26/066 , B23K26/073 , B23K26/083 , B23K26/0869 , B23K26/364 , B23K26/38 , B23K26/40 , B23K2101/40 , B23K2103/50
摘要： UV laser cutting throughput through silicon and like materials is improved by dividing a long cut path (112) into short segments (122), from about 10 μm to 1 mm. The laser output (32) is scanned within a first short segment (122) for a predetermined number of passes before being moved to and scanned within a second short segment (122) for a predetermined number of passes. The bite size, segment size (126), and segment overlap (136) can be manipulated to minimize the amount and type of trench backfill. Real-time monitoring is employed to reduce rescanning portions of the cut path 112 (112) where the cut is already completed. Polarization direction of the laser output (32) is also correlated with the cutting direction to further enhance throughput. This technique can be employed to cut a variety of materials with a variety of different lasers and wavelengths. A multi-step process can optimize the laser processes for each individual layer.
摘要翻译：通过将长切割路径（112）分割成约10微米至1mm的短段（122）来提高通过硅等材料的UV激光切割吞吐量。激光输出（32）在第一短段（122）内扫描预定数量的通过，然后移动到第二短段（122）内并在第二短段（122）内扫描预定次数的通过次数。可以操纵咬合尺寸，段尺寸（126）和段重叠（136）以最小化沟槽回填的数量和类型。采用实时监测来减少已经完成切割的切割路径112（112）的重新扫描部分。激光输出（32）的极化方向也与切割方向相关，以进一步提高吞吐量。该技术可用于切割具有各种不同激光和波长的各种材料。多步骤过程可以优化每个单独层的激光工艺。

6. 再颁专利

USRE43400E1 Laser segmented cutting, multi-step cutting, or both 有权
公开(公告)号：USRE43400E1
公开(公告)日：2012-05-22
申请号：US11332815
申请日：2006-01-13
申请人： James N. O'Brien , Lian-Cheng Zou , Yunlong Sun , Kevin P. Fahey , Michael J. Wolfe , Brian W. Baird , Richard S. Harris
发明人： James N. O'Brien , Lian-Cheng Zou , Yunlong Sun , Kevin P. Fahey , Michael J. Wolfe , Brian W. Baird , Richard S. Harris
IPC分类号： B23K26/04 , C04B41/91
CPC分类号： B23K26/0622 , B23K26/032 , B23K26/066 , B23K26/073 , B23K26/083 , B23K26/0869 , B23K26/364 , B23K26/38 , B23K26/40 , B23K2101/40 , B23K2103/50
摘要： UV laser cutting throughput through silicon and like materials is improved by dividing a long cut path (112) into short segments (122), from about 10 μm to 1 mm. The laser output (32) is scanned within a first short segment (122) for a predetermined number of passes before being moved to and scanned within a second short segment (122) for a predetermined number of passes. The bite size, segment size (126), and segment overlap (136) can be manipulated to minimize the amount and type of trench backfill. Real-time monitoring is employed to reduce rescanning portions of the cut path 112 (112) where the cut is already completed. Polarization direction of the laser output (32) is also correlated with the cutting direction to further enhance throughput. This technique can be employed to cut a variety of materials with a variety of different lasers and wavelengths. A multi-step process can optimize the laser processes for each individual layer.

7. 发明授权

US07687740B2 Semiconductor structure processing using multiple laterally spaced laser beam spots delivering multiple blows 有权
标题翻译：使用多个横向间隔开的激光束点进行多次打击的半导体结构处理
公开(公告)号：US07687740B2
公开(公告)日：2010-03-30
申请号：US11051262
申请日：2005-02-04
申请人： Kelly J. Bruland , Brian W. Baird , Ho Wai Lo
发明人： Kelly J. Bruland , Brian W. Baird , Ho Wai Lo
IPC分类号： B23K26/00
CPC分类号： B23K26/067 , B23K26/0613 , H01L21/76894
摘要： Methods and systems process a semiconductor substrate having a plurality of structures to be selectively irradiated with multiple laser beams. The structures are arranged in a plurality of substantially parallel rows extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects a first target location on or within the semiconductor substrate. The method also generates a second laser beam that propagates along a second laser beam axis that intersects a second target location on or within the semiconductor substrate. The second target location is offset from the first target location in a direction perpendicular to the lengthwise direction of the rows by some amount such that, when the first target location is a structure on a first row of structures, the second target location is a structure or between two adjacent structures on a second row distinct from the first row. The method moves the semiconductor substrate relative to the first and second laser axes in a direction approximately parallel to the rows of structures, so as to pass the first target location along the first row to irradiate for a first time selected structures in the first row, and so as to simultaneously pass the second target location along the second row to irradiate for a second time structures previously irradiated by the first laser beam during a previous pass of the first target location along the second row.
摘要翻译：方法和系统处理具有多个结构的半导体衬底以选择性地照射多个激光束。这些结构被布置成沿大致长度方向延伸的多个基本上平行的行。该方法产生沿着与半导体衬底上或半导体衬底内的第一目标位置相交的第一激光束轴传播的第一激光束。该方法还产生沿着与半导体衬底上或第二靶标位置相交的第二激光束轴传播的第二激光束。第二目标位置在垂直于行长度方向的方向上偏离第一目标位置一定量，使得当第一目标位置是第一行结构上的结构时，第二目标位置是结构或在与第一行不同的第二行上的两个相邻结构之间。所述方法使所述半导体衬底相对于所述第一和第二激光轴在大致平行于所述结构行的方向上移动，以使所述第一目标位置沿着所述第一行通过，以在所述第一行中首次照射所选择的结构，并且沿着第二行同时通过第二目标位置以照射先前在第一目标位置沿着第二行的先前通过期间由第一激光束照射的第二时间结构。

8. 发明申请

US20080121627A1 Methods and systems for semiconductor structure processing using multiple laser beam spots 有权
标题翻译：使用多个激光束点进行半导体结构处理的方法和系统
公开(公告)号：US20080121627A1
公开(公告)日：2008-05-29
申请号：US11980872
申请日：2007-10-30
申请人： Kelly J. Bruland , Stephen N. Swaringen , Brian W. Baird , Ho Wai Lo , David Martin Hemenway , Brady Nilsen
发明人： Kelly J. Bruland , Stephen N. Swaringen , Brian W. Baird , Ho Wai Lo , David Martin Hemenway , Brady Nilsen
IPC分类号： B23K26/38 , B23K26/03
CPC分类号： H01L23/5258 , B23K26/042 , B23K26/0613 , B23K26/067 , H01L2924/0002 , H01L2924/00
摘要： Methods and systems selectively irradiate structures on or within a semiconductor substrate using multiple laser beams. The structures may be laser-severable conductive links, and the purpose of the irradiation may be to sever selected links.
摘要翻译：方法和系统使用多个激光束选择性地照射半导体衬底上或其中的结构。结构可以是激光可分割的导电连接，并且照射的目的可以是切断所选择的连接。

9. 发明授权

US07157038B2 Ultraviolet laser ablative patterning of microstructures in semiconductors 有权
标题翻译：半导体微结构的紫外激光烧蚀图案化
公开(公告)号：US07157038B2
公开(公告)日：2007-01-02
申请号：US10017497
申请日：2001-12-14
申请人： Brian W. Baird , Michael J. Wolfe , Richard S. Harris , Kevin P. Fahey , Lian-Cheng Zou , Thomas R. McNeil
发明人： Brian W. Baird , Michael J. Wolfe , Richard S. Harris , Kevin P. Fahey , Lian-Cheng Zou , Thomas R. McNeil
IPC分类号： B23K26/38
CPC分类号： B23K26/0622 , B23K26/066 , B23K26/083 , B23K26/0869 , B23K26/364 , B23K26/40 , B23K2101/40 , B23K2103/50
摘要： Patterns with feature sizes of less than 50 microns are rapidly formed directly in semiconductors, particularly silicon, GaAs, indium phosphide, or single crystalline sapphire, using ultraviolet laser ablation. These patterns include very high aspect ratio cylindrical through-hole openings for integrated circuit connections; singulation of processed die contained on semiconductor wafers; and microtab cutting to separate microcircuit workpieces from a parent semiconductor wafer. Laser output pulses (32) from a diode-pumped, Q-switched frequency-tripled Nd:YAG, Nd:YVO4, or Nd:YLF is directed to the workpiece (12) with high speed precision using a compound beam positioner. The optical system produces a Gaussian spot size, or top hat beam profile, of about 10 microns. The pulse energy used for high-speed ablative processing of semiconductors using this focused spot size is greater than 200 μJ per pulse at pulse repetition frequencies greater than 5 kHz and preferably above 15 kHz. The laser pulsewidth measured at the full width half-maximum points is preferably less than 80 ns.
摘要翻译：特征尺寸小于50微米的图案使用紫外激光烧蚀直接在半导体，特别是硅，GaAs，磷化铟或单晶蓝宝石中形成。这些图案包括用于集成电路连接的非常高的纵横比圆柱形通孔开口; 包含在半导体晶片上的加工芯片的分割; 和微型切割以从母半导体晶片分离微电路工件。来自二极管泵浦Q开关频率三倍的Nd：YAG，Nd：YVO 4或Nd：YLF的激光输出脉冲（32）以高速精度被引导到工件（12）使用复合光束定位器。光学系统产生约10微米的高斯光点尺寸或顶帽光束轮廓。用于使用这种聚焦光点尺寸的半导体高速烧蚀处理的脉冲能量大于5kHz，优选高于15kHz的脉冲重复频率时，每脉冲大于200μJ。在全宽度半最大点处测量的激光脉冲宽度优选小于80ns。

10. 发明申请

US20110170163A1 SYSTEM AND METHOD FOR THE SPATIAL TAILORING OF LASER LIGHT USING TEMPORAL PHASE MODULATION 有权
标题翻译：使用时间相位调制对激光进行空间定位的系统和方法
公开(公告)号：US20110170163A1
公开(公告)日：2011-07-14
申请号：US12978126
申请日：2010-12-23
申请人： Yves Taillon , Mathieu Drolet , David Gay , Louis Desbiens , Brian W. Baird
发明人： Yves Taillon , Mathieu Drolet , David Gay , Louis Desbiens , Brian W. Baird
IPC分类号： G02F1/01
CPC分类号： B23K26/066
摘要： Laser systems and methods for providing an output light beam having a target spatial pattern are provided. A light generating module generates an input light beam, whose spectral profile is then tailored by imposing thereon a controllable phase modulation. The obtained spectrally tailored light beam is dispersed, using at least one spatially-dispersive element to provide an output light beam having a spatial profile which is a function of the spectral profile of the spectrally tailored light beam, The phase modulation is selected in view of the spectral profile of the input light beam and of the dispersion characteristics of the at least one spatially-dispersive element so that the spatial pattern of the output light beam matches the target spatial pattern therefor.
摘要翻译：提供了用于提供具有目标空间图案的输出光束的激光系统和方法。光产生模块产生输入光束，其光谱轮廓然后通过在其上施加可控相位调制而被调整。使用至少一个空间色散元件将获得的光谱定制的光束分散，以提供具有作为光谱定制的光束的光谱分布的函数的空间分布的输出光束。相位调制是根据输入光束的光谱分布和至少一个空间色散元件的色散特性，使得输出光束的空间图案与目标空间图案匹配。

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