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    • 8. 发明授权
    • Method for checking an integrated electrical circuit
    • 检查集成电路的方法
    • US06834377B2
    • 2004-12-21
    • US10368334
    • 2003-02-18
    • Peter BaaderBurkhard Ludwig
    • Peter BaaderBurkhard Ludwig
    • G06F1750
    • G06F8/44G06F17/5081
    • A layout of an integrated electrical circuit on a memory unit of a computer system includes one or more instantiations of at least one circuit network description as well as information about the instantiations. A raw data structure represents the logical configuration of the layout and associates each instantiation with one, and only one, polygon data structure. A modified data structure is produced to represent the layout, which associates a circuit network description with one, and only one, polygon data structure, wherein the geometrical differences between the instantiations of this circuit network description are taken into account by variants in the polygon data structure.
    • 在计算机系统的存储器单元上的集成电路的布局包括至少一个电路网络描述的一个或多个实例以及关于该实例的信息。 原始数据结构表示布局的逻辑配置,并将每个实例化与一个且仅一个多边形数据结构相关联。 生成修改的数据结构以表示布局,其将电路网络描述与一个且仅一个多边形数据结构相关联,其中通过多边形数据中的变体来考虑该电路网络描述的实例之间的几何差异 结构体。
    • 9. 发明授权
    • Alternating phase mask
    • 交替相位掩模
    • US06680151B2
    • 2004-01-20
    • US10174646
    • 2002-06-18
    • Michael HeissmeierMarkus HofsässBurkhard LudwigMolela MoukaraChristoph Nölscher
    • Michael HeissmeierMarkus HofsässBurkhard LudwigMolela MoukaraChristoph Nölscher
    • G03F900
    • G03F1/30
    • An alternating phase mask is described in which a propagation of a T phase conflict which occurs in the case of a T pattern structure is avoided by producing a phase jump at one of the 90° corners of the T pattern structure. First and second transparent area segments, which produce a mutual phase difference of 180°, are separated by a narrow slot running approximately at 45° toward the corner of the T pattern structure. The structure containing the transparent area segments, which are separated by the slot running at 45°, can also be provided at the other corner of the T structure providing a solution for each T conflict. The trimming mask for eliminating the dark line artificially produced by the 180° phase jump is a conventional mask and requires no additional coloration. Moreover, alignment errors are minimal on account of the small number of trimming openings.
    • 描述了一种交替相位掩模,其中通过在T图案结构的90°角之一处产生相位跳跃来避免在T图案结构的情况下发生的T相冲突的传播。 产生180°相互相位差的第一透明区域和第二透明区域段通过大致45度向T图案结构的拐角延伸的窄槽分隔开。 包含由45°运行的槽隔开的透明区域段的结构也可以设置在T结构的另一个角上,为每个T冲突提供解决方案。 用于消除由180°相位跳跃人为产生的暗线的修剪掩模是常规的掩模,并且不需要额外的着色。 此外,由于修剪开口的数量少,对准误差最小。