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1. 发明授权

US10077188B2 Manufacturing method of MEMS chip 有权
公开(公告)号：US10077188B2
公开(公告)日：2018-09-18
申请号：US15405603
申请日：2017-01-13
申请人： CSMC TECHNOLOGIES FAB1 CO., LTD.
发明人： Dan Dai , Xinwei Zhang , Guoping Zhou , Changfeng Xia
IPC分类号： B81C1/00
CPC分类号： B81C1/00825 , B81B7/0029 , B81C1/0038 , B81C2201/0167 , B81C2201/053
摘要： A method of manufacturing a MEMS chip includes: providing a silicon substrate layer, the silicon substrate layer comprising a front surface configured to perform a MEMS process and a rear surface opposite to the front surface; growing a first oxidation layer mainly made of SiO2 on the rear surface of the silicon substrate layer by performing a thermal oxidation process; and depositing a first thin film layer mainly made of silicon nitride on the first oxidation layer by performing a low pressure chemical vapor deposition process.

2. 发明授权

US09580301B2 MEMS chip and manufacturing method therefor 有权
标题翻译： MEMS芯片及其制造方法
公开(公告)号：US09580301B2
公开(公告)日：2017-02-28
申请号：US14411537
申请日：2013-06-29
申请人： CSMC TECHNOLOGIES FAB1 CO., LTD.
发明人： Dan Dai , Xinwei Zhang , Guoping Zhou , Changfeng Xia
IPC分类号： B81B7/00 , B81C1/00
CPC分类号： B81C1/00825 , B81B7/0029 , B81C1/0038 , B81C2201/0167 , B81C2201/053
摘要： A MEMS chip (100) includes a silicon substrate layer (110), a first oxidation layer (120) and a first thin film layer (130). The silicon substrate layer includes a front surface (112) for a MEMS process and a rear surface (114), both the front surface and the rear surface being polished surfaces. The first oxidation layer is mainly made of silicon dioxide and is formed on the rear surface of the silicon substrate layer. The first thin film layer is mainly made of silicon nitride and is formed on the surface of the first oxidation layer. In the above MEMS chip, by sequentially laminating a first oxidation layer and a first thin film layer on the rear surface of a silicon substrate layer, the rear surface is effectively protected to prevent the scratch damage in the course of a MEMS process. A manufacturing method for the MEMS chip is also provided.
摘要翻译： MEMS芯片（100）包括硅衬底层（110），第一氧化层（120）和第一薄膜层（130）。硅衬底层包括用于MEMS工艺的前表面（112）和后表面（114），前表面和后表面都是抛光表面。第一氧化层主要由二氧化硅制成，并形成在硅衬底层的后表面上。第一薄膜层主要由氮化硅制成，并且形成在第一氧化层的表面上。在上述MEMS芯片中，通过在硅衬底层的后表面依次层叠第一氧化层和第一薄膜层，有效地保护后表面以防止在MEMS工艺过程中的划痕损伤。还提供了一种用于MEMS芯片的制造方法。

3. 发明申请

US20150175409A1 METHOD FOR FABRICATING MULTI-TRENCH STRUCTURE 审中-公开
标题翻译：制作多层结构的方法
公开(公告)号：US20150175409A1
公开(公告)日：2015-06-25
申请号：US14411989
申请日：2013-08-19
申请人： CSMC TECHNOLOGIES FAB1 CO., LTD.
发明人： Xinwei Zhang , Dan Dai , Guoping Zhou , Changfeng Xia
IPC分类号： B81C1/00
CPC分类号： B81C1/0038 , B81B2203/0127 , B81C1/00158 , B81C1/00531
摘要： Provided is a method for fabricating a multi-trench structure, including steps of: performing anisotropic etching on a semiconductor substrate so as to form a vertical trench; growing a first epitaxial layer on the semiconductor substrate in which the vertical trench has been formed, so that the first epitaxial layer covers the top of the vertical trench to form a closed structure; performing anisotropic and isotropic etching on the closed structure, so as to form a trench array, and to make the trench array communicate with the vertical trench, the trench array including a number of trenches or vias, upper portions of a number of trenches or vias being separated from each other, and lower portions thereof communicating with each other to form a cavity; and growing a second epitaxial layer to cover the trench array, so as to form a closed multi-trench structure. With two times of growth of the epitaxial layers, the multi-trench structure remains stable and solid in a fabricating process, which prevents phenomena of film breakage or falling off in the fabricating process.
摘要翻译：提供一种制造多沟槽结构的方法，包括以下步骤：在半导体衬底上进行各向异性蚀刻以形成垂直沟槽; 在其上形成有垂直沟槽的半导体衬底上生长第一外延层，使得第一外延层覆盖垂直沟槽的顶部以形成闭合结构; 在闭合结构上执行各向异性和各向同性蚀刻，以便形成沟槽阵列，并且使沟槽阵列与垂直沟槽连通，沟槽阵列包括多个沟槽或通孔，多个沟槽或通孔的上部彼此分离，并且其下部彼此连通以形成空腔; 以及生长第二外延层以覆盖沟槽阵列，以便形成封闭的多沟槽结构。通过外延层的两次生长，多沟槽结构在制造过程中保持稳定和稳定，这防止了制造过程中膜断裂或脱落的现象。

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