专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20150227048A1 PHOTOLITHOGRAPHY METHOD AND SYSTEM BASED ON HIGH STEP SLOPE 有权
标题翻译：基于高阶梯度的光刻方法和系统
公开(公告)号：US20150227048A1
公开(公告)日：2015-08-13
申请号：US14435945
申请日：2013-09-03
申请人： CSMC TECHNOLOGIES FAB1 CO., LTD.
发明人： Jiale Su
IPC分类号： G03F7/20
CPC分类号： G03F7/2035 , G03F1/38 , G03F7/203
摘要： A photolithography method and system based on a high step slope are provided. The method includes: S1, manufacturing a sacrificial layer with a high step slope on a substrate; S2, adopting a spin-on PR coating process to cover the sacrificial layer with a photoresist layer to form a photolithographic layer; S3, forming a mask pattern and a compensation pattern on a mask; and S4, performing photolithography processes, by a photolithography machine, on the photolithographic layer. By forming a slope-top compensation pattern and a slope compensation pattern on a mask to perform photolithography on the substrate of a sacrificial layer, a relatively wide compensation pattern is set in a part of the top of the slope with a small thickness, thereby compensating the overexposure at the top of the slope, reducing the error in the photolithographic pattern, and improving the precision of photolithography of the high step slope.
摘要翻译：提供了一种基于高阶斜率的光刻方法和系统。该方法包括：S1，在衬底上制造具有高阶跃斜率的牺牲层; S2，采用旋涂PR涂覆工艺以用光致抗蚀剂层覆盖牺牲层以形成光刻层; S3，在掩模上形成掩模图案和补偿图案; 和S4，通过光刻机在光刻层上进行光刻工艺。通过在掩模上形成斜坡补偿图案和斜率补偿图案以在牺牲层的基板上进行光刻，在斜面的顶部的一部分中以较小的厚度设置相对较宽的补偿图案，从而补偿斜坡顶部过度曝光，降低了光刻图案的误差，提高了高阶斜坡光刻的精度。

2. 发明授权

US10816903B2 Photolithography method and system based on high step slope 有权
公开(公告)号：US10816903B2
公开(公告)日：2020-10-27
申请号：US15905969
申请日：2018-02-27
申请人： CSMC TECHNOLOGIES FAB1 CO., LTD.
发明人： Jiale Su
IPC分类号： G03F7/20 , G03F1/70 , G03F1/38
摘要： A photolithography system based on a high step slope may include a depositing unit configured to manufacture a sacrificial layer having high step slope on a substrate. The system may also include a coating unit configured to coat a photoresist layer on the sacrificial layer by performing a spin-on PR coating process to form a photolithographic layer. The system may further include a photolithography unit configured to perform one or more photolithography processes to the photolithographic layer. The photolithography unit may comprise a plurality of masks of compensation patterns. The compensation pattern may comprise a slope-top compensation pattern and a slope compensation pattern.

3. 发明授权

US09371224B2 Silicon etching method 有权
标题翻译：硅蚀刻法
公开(公告)号：US09371224B2
公开(公告)日：2016-06-21
申请号：US14411931
申请日：2013-09-03
申请人： CSMC TECHNOLOGIES FAB1 CO., LTD.
发明人： Jiale Su
IPC分类号： B81C1/00 , H01L21/308
CPC分类号： B81C1/00396 , B81B2203/033 , B81C1/00412 , B81C1/00619 , B81C1/00626 , B81C2201/0132 , H01L21/3086
摘要： A silicon etching method of etching a silicon substrate to form silicon trenches having different width dimensions includes: S1, providing a silicon substrate; S2, depositing a mask layer on the silicon substrate; S3, corroding the mask layer to form windows having different width dimensions, wherein a mask layer having a certain thickness is reserved at least at a bottom portion of a window having a non-minimum width dimension, such that all the silicon trenches have the same depth after step S4; and S4, corroding the mask layer at the bottom portion of the window and the silicon substrate to form the silicon trenches. The mask layer having a certain thickness is reserved at the bottom portion of the window having the non-minimum width dimension, a relatively large window is protected, and a relatively small window is etched first, so that the finally obtained silicon trenches have the same depth.
摘要翻译：蚀刻硅衬底以形成具有不同宽度尺寸的硅沟槽的硅蚀刻方法包括：S1，提供硅衬底; S2，在硅衬底上沉积掩模层; S3，腐蚀掩模层以形成具有不同宽度尺寸的窗口，其中具有一定厚度的掩模层至少在具有非最小宽度尺寸的窗口的底部保留，使得所有硅沟槽具有相同的步骤S4之后的深度; 和S4，腐蚀窗口底部的掩模层和硅衬底以形成硅沟槽。具有一定厚度的掩模层被保留在具有非最小宽度尺寸的窗口的底部，相对较大的窗口被保护，并且首先蚀刻相对小的窗口，使得最终获得的硅沟槽具有相同的深度。

4. 发明授权

US09939724B2 Photolithography method and system based on high step slope 有权
公开(公告)号：US09939724B2
公开(公告)日：2018-04-10
申请号：US14435945
申请日：2013-09-03
申请人： CSMC TECHNOLOGIES FAB1 CO., LTD.
发明人： Jiale Su
IPC分类号： G03F1/38 , G03F7/20
CPC分类号： G03F7/2035 , G03F1/38 , G03F7/203
摘要： A photolithography method and system based on a high step slope are provided. The method includes: S1, manufacturing a sacrificial layer with a high step slope on a substrate; S2, adopting a spin-on PR coating process to cover the sacrificial layer with a photoresist layer to form a photolithographic layer; S3, forming a mask pattern and a compensation pattern on a mask; and S4, performing photolithography processes, by a photolithography machine, on the photolithographic layer. By forming a slope-top compensation pattern and a slope compensation pattern on a mask to perform photolithography on the substrate of a sacrificial layer, a relatively wide compensation pattern is set in a part of the top of the slope with a small thickness, thereby compensating the overexposure at the top of the slope, reducing the error in the photolithographic pattern, and improving the precision of photolithography of the high step slope.

5. 发明申请

US20150140823A1 SILICON ETCHING METHOD 有权
标题翻译：硅蚀刻方法
公开(公告)号：US20150140823A1
公开(公告)日：2015-05-21
申请号：US14411931
申请日：2013-09-03
申请人： CSMC TECHNOLOGIES FAB1 CO., LTD.
发明人： Jiale Su
IPC分类号： B81C1/00
CPC分类号： B81C1/00396 , B81B2203/033 , B81C1/00412 , B81C1/00619 , B81C1/00626 , B81C2201/0132 , H01L21/3086
摘要： A silicon etching method of etching a silicon substrate to form silicon trenches having different width dimensions includes: S1, providing a silicon substrate; S2, depositing a mask layer on the silicon substrate; S3, corroding the mask layer to form windows having different width dimensions, wherein a mask layer having a certain thickness is reserved at least at a bottom portion of a window having a non-minimum width dimension, such that all the silicon trenches have the same depth after step S4; and S4, corroding the mask layer at the bottom portion of the window and the silicon substrate to form the silicon trenches. The mask layer having a certain thickness is reserved at the bottom portion of the window having the non-minimum width dimension, a relatively large window is protected, and a relatively small window is etched first, so that the finally obtained silicon trenches have the same depth.
摘要翻译：蚀刻硅衬底以形成具有不同宽度尺寸的硅沟槽的硅蚀刻方法包括：S1，提供硅衬底; S2，在硅衬底上沉积掩模层; S3，腐蚀掩模层以形成具有不同宽度尺寸的窗口，其中具有一定厚度的掩模层至少在具有非最小宽度尺寸的窗口的底部保留，使得所有硅沟槽具有相同的步骤S4之后的深度; 和S4，腐蚀窗口底部的掩模层和硅衬底以形成硅沟槽。具有一定厚度的掩模层被保留在具有非最小宽度尺寸的窗口的底部，相对较大的窗口被保护，并且首先蚀刻相对小的窗口，使得最终获得的硅沟槽具有相同的深度。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式