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1. 发明申请

US20220171292A1 OPTICAL DIFFRACTION COMPONENT 有权
公开(公告)号：US20220171292A1
公开(公告)日：2022-06-02
申请号：US17673966
申请日：2022-02-17
申请人： Carl Zeiss SMT GmbH
发明人： Heiko Feldmann
IPC分类号： G03F7/20 , G02B5/18 , G02B5/08
摘要： An optical diffraction component has a periodic grating structure profile. The diffraction structure levels are arranged so that a wavelength range around two different target wavelengths diffracted by the grating structure profile has radiation components with three different phases that interfere destructively with one another. Diffraction structure levels predefine a topography of a grating period of the grating structure profile that is repeated regularly along a period running direction. These include a neutral diffraction structure level, a positive diffraction structure level raised relative thereto, and a negative diffraction structure level lowered relative thereto. The neutral diffraction structure level has an extent along the period running direction which is less than 50% of the extent of the grating period. A difference between the two target wavelengths is less than 50%. The result is an optical diffraction component whose possibilities for use can be extended, for example, to stray light suppression.

2. 发明申请

US20210318622A1 OPTICAL DIFFRACTION COMPONENT FOR SUPPRESSING AT LEAST ONE TARGET WAVELENGTH BY DESTRUCTIVE INTERFERENCE 有权
公开(公告)号：US20210318622A1
公开(公告)日：2021-10-14
申请号：US16950173
申请日：2020-11-17
申请人： Carl Zeiss SMT GmbH
发明人： Heiko Feldmann , Valentin Bolsinger , William Peter Van Drent , Jozef Petrus Henricus Benschop
IPC分类号： G03F7/20 , G02B5/18
摘要： An optical diffraction component is configured to suppress at least one target wavelength by destructive interference. The optical diffraction component includes at least three diffraction structure levels that are assignable to at least two diffraction structure groups. A first of the diffraction structure groups is configured to suppress a first target wavelength λ1. A second of the diffraction structure groups is configured to suppress a second target wavelength λ2, where (λ1−λ2)2/(λ1+λ2)2

3. 发明申请

US20200225586A1 OPTICAL DIFFRACTION COMPONENT FOR SUPPRESSING AT LEAST ONE TARGET WAVELENGTH BY DESTRUCTIVE INTERFERENCE 审中-公开
公开(公告)号：US20200225586A1
公开(公告)日：2020-07-16
申请号：US16739320
申请日：2020-01-10
申请人： Carl Zeiss SMT GmbH
发明人： Heiko Feldmann , Valentin Bolsinger , William Peter Van Drent , Jozef Petrus Henricus Benschop
IPC分类号： G03F7/20 , G02B5/18
摘要： An optical diffraction component is configured to suppress at least one target wavelength by destructive interference. The optical diffraction component includes at least three diffraction structure levels that are assignable to at least two diffraction structure groups. A first of the diffraction structure groups is configured to suppress a first target wavelength λ1. A second of the diffraction structure groups is configured to suppress a second target wavelength λ2, where (λ1−λ2)2/(λ1+λ2)2

4. 发明授权

US10274649B2 Mirror and related EUV systems and methods 有权
公开(公告)号：US10274649B2
公开(公告)日：2019-04-30
申请号：US13789773
申请日：2013-03-08
申请人： Carl Zeiss SMT GmbH
发明人： Johannes Ruoff , Heiko Feldmann
IPC分类号： G02B5/08 , G03F7/20
摘要： A mirror for EUV radiation includes a mirror body, which has at least one EUV radiation-reflecting region and at least two EUV radiation-permeable regions. A spatial separation of the illumination and imaging beam paths is possible with small angles of incidence and a large object-side numerical aperture.

5. 发明授权

US09298097B2 Projection exposure apparatus for EUV microlithography and method for microlithographic exposure 有权
标题翻译：用于EUV微光刻的投影曝光装置和微光刻曝光方法
公开(公告)号：US09298097B2
公开(公告)日：2016-03-29
申请号：US13782390
申请日：2013-03-01
申请人： Carl Zeiss SMT GmbH
发明人： Marc Bienert , Heiko Feldmann , Aksel Goehnermeier , Oliver Natt , Johannes Ruoff
IPC分类号： G03B27/42 , G03F7/20
CPC分类号： G03F7/70091 , G03F7/701 , G03F7/70425
摘要： The disclosure relates to a projection exposure apparatus for EUV microlithography which includes an illumination system for illuminating a pattern, and a projection objective for imaging the pattern onto a light-sensitive substrate. The projection objective has a pupil plane with an obscuration. The illumination system generates light with an angular distribution having an illumination pole which extends over a range of polar angles and a range of azimuth angles and within which the light intensity is greater than an illumination pole minimum value. From the illumination pole toward large polar angles a dark zone is excluded within which the light intensity is less than the illumination pole minimum value, and which has in regions a form corresponding to the form of the obscuration of the pupil plane.
摘要翻译：本发明涉及一种用于EUV微光刻的投影曝光装置，其包括用于照亮图案的照明系统和用于将图案成像到感光基板上的投影物镜。投影物镜具有晦暗的瞳孔平面。照明系统产生具有角度分布的光，其具有在极角范围和方位角范围内延伸的照明极，并且光强度大于照明极点最小值。从照明极到大的极角，不包括光强度小于照明极最小值的暗区，并且在区域中具有对应于瞳孔平面遮蔽形式的形式。

6. 发明授权

US09164396B2 Projection lens system of a microlithographic projection exposure installation 有权
标题翻译：投影透镜系统的微光刻投影曝光装置
公开(公告)号：US09164396B2
公开(公告)日：2015-10-20
申请号：US13660347
申请日：2012-10-25
申请人： Carl Zeiss SMT GmbH
发明人： Helmut Beierl , Sascha Bleidistel , Wolfgang Singer , Toralf Gruner , Alexander Epple , Norbert Wabra , Susanne Beder , Jochen Weber , Heiko Feldmann , Baerbel Schwaer , Olaf Rogalsky , Arif Kazi
IPC分类号： G03B27/42 , G03B27/52 , G03F7/20
CPC分类号： G03F7/70341 , G03F7/70891
摘要： A microlithographic projection exposure apparatus comprises a projection objective which images an object onto an image plane and has a lens with a curved surface. In the projection objective there is a liquid or solid medium which directly adjoins the curved surface over a region which is usable for imaging the object. The projection exposure apparatus also has an adjustable manipulator for reducing an image field curvature which is caused by heating of the medium during the projection operation.
摘要翻译：微光刻投影曝光装置包括将物体成像到平面上并具有弯曲表面的透镜的投影物镜。在投影物镜中，存在液体或固体介质，其直接邻接可用于成像物体的区域上的曲面。投影曝光装置还具有可调节的操纵器，用于降低在投影操作期间由介质的加热引起的图像场曲率。

7. 发明申请

US20150293352A1 METHOD FOR IMPROVING THE IMAGING PROPERTIES OF A PROJECTION OBJECTIVE, AND SUCH A PROJECTION OBJECTIVE 有权
标题翻译：改进投影目标成像特性的方法及其投影目标
公开(公告)号：US20150293352A1
公开(公告)日：2015-10-15
申请号：US14727352
申请日：2015-06-01
申请人： Carl Zeiss SMT GmbH
发明人： Olaf Conradi , Heiko Feldmann , Gerald Richter , Sascha Bleidistel , Andreas Frommeyer , Toralf Gruner , Wolfgang Hummel
IPC分类号： G02B27/00 , G02B3/00 , G03F7/20 , G02B26/08
CPC分类号： G02B27/0068 , G02B3/0081 , G02B26/0825 , G03F7/7015 , G03F7/70266 , G03F7/70558 , Y10S359/90
摘要： The invention relates to a method for improving the imaging properties of a micro lithography projection objective, wherein the projection objective has a plurality of lenses between an object plane and an image plane, a first lens of the plurality of lenses being assigned a first manipulator for actively deforming the lens, the first lens being deformed for at least partially correcting an aberration, at least one second lens of the plurality of lenses furthermore being assigned at least one second manipulator, and the second lens being deformed in addition to the first lens. Furthermore, a method is described for selecting at least one lens of a plurality of lenses of a projection objective as actively deformable element, and a projection objective.
摘要翻译：本发明涉及一种用于改善微光刻投影物镜的成像特性的方法，其中所述投影物镜在物平面和像平面之间具有多个透镜，所述多个透镜的第一透镜被分配用于主动地变形透镜，第一透镜被变形以至少部分地校正像差，多个透镜中的至少一个第二透镜进一步被分配至少一个第二操纵器，并且第二透镜除了第一透镜之外也变形。此外，描述了用于选择投影物镜的多个透镜中的至少一个透镜作为主动变形元件和投影物镜的方法。

8. 发明申请

US20210397099A1 APPARATUS AND METHOD FOR CHARACTERIZING A MICROLITHOGRAPHIC MASK 有权
公开(公告)号：US20210397099A1
公开(公告)日：2021-12-23
申请号：US17345024
申请日：2021-06-11
申请人： Carl Zeiss SMT GmbH
发明人： Johannes Ruoff , Heiko Feldmann , Ulrich Matejka , Thomas Thaler , Sascha Perlitz , Shao-Chi Wei , Joerg Frederik Blumrich , Markus Deguenther
IPC分类号： G03F7/20
摘要： The invention relates to an apparatus and a method for characterizing a microlithographic mask. According to one aspect, an apparatus according to the invention comprises at least one light source which emits coherent light, an illumination optical unit which produces a diffraction-limited light spot on the mask from the coherent light of the at least one light source, a scanning device, by use of which it is possible to implement a scanning movement of the diffraction-limited light spot relative to the mask, a sensor unit, and an evaluation unit for evaluating the light that is incident on the sensor unit and has come from the mask, an output coupling element for coupling out a portion of the coherent light emitted by the at least one light source, and an intensity sensor for capturing the intensity of this output coupled portion.

9. 发明授权

US10928332B2 Inspection device for masks for semiconductor lithography and method 有权
公开(公告)号：US10928332B2
公开(公告)日：2021-02-23
申请号：US16026197
申请日：2018-07-03
申请人： Carl Zeiss SMT GmbH
发明人： Holger Seitz , Thomas Zeuner , Heiko Feldmann
IPC分类号： G01N21/956 , G03F7/20 , G03F1/84
摘要： The invention relates to an inspection device for masks for semiconductor lithography, comprising an imaging device for imaging a mask, and an image recording device, wherein one or more correction bodies which exhibit a dispersive behavior for at least one subrange of the illumination radiation used for the imaging are arranged in the light path between the mask and the image recording device. The invention furthermore relates to a method for taking account of longitudinal chromatic aberrations in inspection devices for masks, comprising the following steps: recording a specific number of images having differently defocused positions, and selecting a subset of the images and simulating a longitudinal chromatic aberration of a projection exposure apparatus.

10. 发明授权

US09568394B2 Optical device 有权
标题翻译：光学装置
公开(公告)号：US09568394B2
公开(公告)日：2017-02-14
申请号：US14034009
申请日：2013-09-23
申请人： CARL ZEISS SMT GmbH
发明人： Rolf Freimann , Heiko Feldmann
IPC分类号： G03B27/54 , G01M11/00 , G01M11/02 , G03F7/20
CPC分类号： G01M11/00 , G01M11/02 , G03F7/70358 , G03F7/70591 , Y10T428/24802
摘要： A device including an imaging optical unit (9) imaging an object field (5) in an image field (10), a structured mask (7), arranged in the region of the object field (5) via reticle holder (8) displaceable in a reticle scanning direction (21), and a sensor apparatus (25), arranged in the region of the image field (10) via a substrate holder (13) displaceable in a substrate scanning direction (22). The mask (7) has at least one measurement structure (27; 33) to be imaged on the sensor apparatus (25), wherein the sensor apparatus (25) includes at least one line sensor (28) with a multiplicity of sensor elements (29), and affords the possibility of testing the imaging optical unit (9) during the displacement of the substrate holder (13) for exposing a substrate (12) arranged on the substrate holder.
摘要翻译：一种包括成像光学单元（9）对成像场（10）中的物场（5）进行成像的设备，通过光罩保持器（8）布置在物场（5）的区域中的结构化掩模（7）以及传感器装置（25），其经由可沿基板扫描方向（22）移位的基板保持器（13）布置在图像场（10）的区域中。掩模（7）具有要在传感器装置（25）上成像的至少一个测量结构（27; 33），其中传感器装置（25）包括具有多个传感器元件的至少一个线传感器（28）并且提供了在衬底保持器（13）的位移期间测试成像光学单元（9）以暴露布置在衬底保持器上的衬底（12）的可能性。

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