专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US10054860B2 Projection exposure apparatus with optimized adjustment possibility 有权
公开(公告)号：US10054860B2
公开(公告)日：2018-08-21
申请号：US15149475
申请日：2016-05-09
申请人： Carl Zeiss SMT GmbH
发明人： Boris Bittner , Holger Walter , Matthias Roesch
IPC分类号： G03B27/68 , G03F7/20
CPC分类号： G03F7/70525 , G03F7/70191 , G03F7/70266 , G03F7/70308 , G03F7/705 , G03F7/70533 , G03F7/70891
摘要： A projection apparatus for microlithography for imaging an object field includes an objective, one or a plurality of manipulators for manipulating one or a plurality of optical elements of the objective, a control unit for regulating or controlling the one or the plurality of manipulators, a determining device for determining at least one or a plurality of image aberrations of the objective, a memory comprising upper bounds for one or a plurality of specifications of the objective, including upper bounds for image aberrations and/or movements for the manipulators, wherein when determining an overshooting of one of the upper bounds by one of the image aberrations and/or an overshooting of one of the upper bounds by one of the manipulator movements by regulation or control of at least one manipulator within at most 30000 ms, or 10000 ms, or 5000 ms, or 1000 ms, or 200 ms, or 20 ms, or 5 ms, or 1 ms, an undershooting of the upper bounds can be effected.

2. 发明申请

US20160252824A1 PROJECTION EXPOSURE APPARATUS WITH OPTIMIZED ADJUSTMENT POSSIBILITY 审中-公开
标题翻译：投影曝光装置优化调整可能性
公开(公告)号：US20160252824A1
公开(公告)日：2016-09-01
申请号：US15149475
申请日：2016-05-09
申请人： Carl Zeiss SMT GmbH
发明人： Boris Bittner , Holger Walter , Matthias Roesch
IPC分类号： G03F7/20
CPC分类号： G03F7/70525 , G03F7/70191 , G03F7/70266 , G03F7/70308 , G03F7/705 , G03F7/70533 , G03F7/70891
摘要： A projection apparatus for microlithography for imaging an object field includes an objective, one or a plurality of manipulators for manipulating one or a plurality of optical elements of the objective, a control unit for regulating or controlling the one or the plurality of manipulators, a determining device for determining at least one or a plurality of image aberrations of the objective, a memory comprising upper bounds for one or a plurality of specifications of the objective, including upper bounds for image aberrations and/or movements for the manipulators, wherein when determining an overshooting of one of the upper bounds by one of the image aberrations and/or an overshooting of one of the upper bounds by one of the manipulator movements by regulation or control of at least one manipulator within at most 30000 ms, or 10000 ms, or 5000 ms, or 1000 ms, or 200 ms, or 20 ms, or 5 ms, or 1 ms, an undershooting of the upper bounds can be effected.
摘要翻译：用于对物场进行成像的微光刻的投影装置包括物镜，用于操纵物镜的一个或多个光学元件的一个或多个操纵器，用于调节或控制一个或多个操纵器的控制单元，用于确定所述目标的至少一个或多个图像像差的装置，包括所述物镜的一个或多个规格的上限的存储器，包括用于所述操纵器的图像像差和/或移动的上限，其中当确定或者通过调节或控制至少一个操纵器在至多30000毫秒或10000毫秒内，通过一个操纵器移动来超图像中的一个上限中的一个上限和/或一个上限的过冲，或 5000ms或1000ms，或200ms，或20ms，或5ms或1ms，可以实现上限的下冲。

3. 发明授权

US10001631B2 Projection lens for EUV microlithography, film element and method for producing a projection lens comprising a film element 有权
公开(公告)号：US10001631B2
公开(公告)日：2018-06-19
申请号：US14454939
申请日：2014-08-08
申请人： Carl Zeiss SMT GMBH
发明人： Boris Bittner , Norbert Wabra , Sonja Schneider , Ricarda Maria Schoemer , Hendrik Wagner , Christian Wald , Rumen Iliew , Thomas Schicketanz , Toralf Gruner , Walter Pauls , Holger Schmidt , Matthias Roesch
IPC分类号： G02B17/08
CPC分类号： G02B17/0892 , B82Y10/00 , G02B17/0896 , G03F7/70191 , G03F7/70233 , G03F7/70316 , G21K1/062 , Y10T29/49826
摘要： A film element of an EUV-transmitting wavefront correction device is arranged in a beam path and includes a first layer of first layer material having a first complex refractive index n1=(1−δ1)+iß1, with a first optical layer thickness, which varies locally over the used region in accordance with a first layer thickness profile, and a second layer of second layer material having a second complex refractive index n2=(1−δ2)+iß2, with a second optical layer thickness, which varies locally over the used region in accordance with a second layer thickness profile. The first and second layer thickness profiles differ. The deviation δ1 of the real part of the first refractive index from 1 is large relative to the absorption coefficient ß1 of the first layer material and the deviation δ2 of the real part of the second refractive index from 1 is small relative to the absorption coefficient ß2 of the second layer material.

4. 发明授权

US11531272B2 Pupil stop for an illumination optical unit of a metrology system 有权
公开(公告)号：US11531272B2
公开(公告)日：2022-12-20
申请号：US17724701
申请日：2022-04-20
申请人： Carl Zeiss SMT GmbH
发明人： Matthias Roesch
IPC分类号： G03F7/20
摘要： A pupil stop serves for use in an illumination optical unit of a metrology system for determining, as a result of illumination and imaging under illumination and imaging conditions corresponding to those of an optical production system, an aerial image of an object to be measured. The pupil stop has two pole passage openings for specifying a respective pole of an illumination of the illumination optical unit specified by the pupil stop. In each case at least one stop web passes through the respective pole passage opening and consequently divides the pole passage opening into a plurality of partial pole openings. This yields a pupil stop with which an accuracy of a convergence of the illumination and imaging conditions of the optical production system to the illumination and imaging conditions of the optical measurement system can be improved.

5. 发明申请

US20220342317A1 PUPIL STOP FOR AN ILLUMINATION OPTICAL UNIT OF A METROLOGY SYSTEM 有权
公开(公告)号：US20220342317A1
公开(公告)日：2022-10-27
申请号：US17724701
申请日：2022-04-20
申请人： Carl Zeiss SMT GmbH
发明人： Matthias Roesch
IPC分类号： G03F7/20
摘要： A pupil stop serves for use in an illumination optical unit of a metrology system for determining, as a result of illumination and imaging under illumination and imaging conditions corresponding to those of an optical production system, an aerial image of an object to be measured. The pupil stop has two pole passage openings for specifying a respective pole of an illumination of the illumination optical unit specified by the pupil stop. In each case at least one stop web passes through the respective pole passage opening and consequently divides the pole passage opening into a plurality of partial pole openings. This yields a pupil stop with which an accuracy of a convergence of the illumination and imaging conditions of the optical production system to the illumination and imaging conditions of the optical measurement system can be improved.

6. 发明申请

US20140176924A1 PROJECTION EXPOSURE APPARATUS WITH OPTIMIZED ADJUSTMENT POSSIBILITY 有权
标题翻译：投影曝光装置优化调整可能性
公开(公告)号：US20140176924A1
公开(公告)日：2014-06-26
申请号：US14195001
申请日：2014-03-03
申请人： Carl Zeiss SMT GmbH
发明人： Boris Bittner , Holger Walter , Matthias Roesch
IPC分类号： G03F7/20
CPC分类号： G03F7/70525 , G03F7/70191 , G03F7/70266 , G03F7/70308 , G03F7/705 , G03F7/70533 , G03F7/70891
摘要： A projection exposure apparatus for microlithography includes: an illumination system configured to illuminate a mask in an object field with exposure light; and a projection objective comprising multiple optical elements configured to image the exposure light from the mask in the object field to a wafer in an image field. The projection exposure apparatus is a wafer scanner configured to move the wafer relative to the mask during an exposure of the wafer with the exposure light. The projection objective further includes at least one manipulator configured to manipulate at least one of the optical elements and a control unit configured to control the manipulator. The control unit is configured to manipulate the optical element with the manipulator during the exposure of the wafer with the exposure light.
摘要翻译：一种用于微光刻的投影曝光装置，包括：照明系统，被配置为用曝光灯照亮物场中的掩模; 以及投影物镜，包括多个光学元件，其配置成将来自物场中的掩模的曝光光成像到图像场中的晶片。投影曝光装置是晶片扫描器，其构造成在曝光光的晶片曝光期间使晶片相对于掩模移动。投影物镜还包括至少一个操纵器，其构造成操纵光学元件中的至少一个以及被配置为控制操纵器的控制单元。控制单元被配置为在曝光用的晶片曝光期间用操纵器来操纵光学元件。

7. 发明授权

US09052609B2 Projection exposure apparatus with optimized adjustment possibility 有权
标题翻译：具有优化调整可能性的投影曝光装置
公开(公告)号：US09052609B2
公开(公告)日：2015-06-09
申请号：US14195001
申请日：2014-03-03
申请人： Carl Zeiss SMT GmbH
发明人： Boris Bittner , Holger Walter , Matthias Roesch
IPC分类号： G03B27/52 , G03B27/42 , G03B27/54 , G03F7/20 , G03B27/72
CPC分类号： G03F7/70525 , G03F7/70191 , G03F7/70266 , G03F7/70308 , G03F7/705 , G03F7/70533 , G03F7/70891
摘要： A projection exposure apparatus for microlithography includes: an illumination system configured to illuminate a mask in an object field with exposure light; and a projection objective comprising multiple optical elements configured to image the exposure light from the mask in the object field to a wafer in an image field. The projection exposure apparatus is a wafer scanner configured to move the wafer relative to the mask during an exposure of the wafer with the exposure light. The projection objective further includes at least one manipulator configured to manipulate at least one of the optical elements and a control unit configured to control the manipulator. The control unit is configured to manipulate the optical element with the manipulator during the exposure of the wafer with the exposure light.
摘要翻译：一种用于微光刻的投影曝光装置，包括：照明系统，被配置为用曝光灯照亮物场中的掩模; 以及投影物镜，包括多个光学元件，其配置成将来自物场中的掩模的曝光光成像到图像场中的晶片。投影曝光装置是晶片扫描器，其构造成在曝光光的晶片曝光期间使晶片相对于掩模移动。投影物镜还包括至少一个操纵器，其构造成操纵光学元件中的至少一个以及被配置为控制操纵器的控制单元。控制单元被配置为在曝光用的晶片曝光期间用操纵器来操纵光学元件。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式