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1. 发明申请

US20220236648A1 METHOD FOR MEASURING A REFLECTIVITY OF AN OBJECT FOR MEASUREMENT LIGHT AND METROLOGY SYSTEM FOR CARRYING OUT THE METHOD 有权
公开(公告)号：US20220236648A1
公开(公告)日：2022-07-28
申请号：US17721750
申请日：2022-04-15
申请人： Carl Zeiss SMT GmbH
发明人： Renzo Capelli , Markus Koch , Dirk Hellweg , Walter Pauls , Grizelda Kersteen , Klaus Gwosch
IPC分类号： G03F7/20
摘要： When measuring a reflectivity of an object for measurement light, initially the object and a reflectivity measurement apparatus are provided. The latter includes a measurement light source, an object holder for holding the object and a spatially resolving detector for capturing measurement light reflected by the object. A measurement light beam impinges on a section of the object within a field of view of the measurement apparatus. The reflected measurement light coming from the impinged-upon section of the object is captured. A surface area of the captured section is at most 50 μm×50 μm. The measurement is performed by the detector. Next, at least one reflectivity parameter of the object is determined on the basis of an intensity of the captured measurement light. The result is a measurement method and a metrology system operating therewith, whereby reflectivities in particular of very finely structured objects, such as lithography masks, can be measured with sufficient precision.

2. 发明授权

US10775691B2 Method for examining photolithographic masks and mask metrology apparatus for performing the method 有权
公开(公告)号：US10775691B2
公开(公告)日：2020-09-15
申请号：US16126402
申请日：2018-09-10
申请人： Carl Zeiss SMT GmbH
发明人： Dirk Hellweg , Markus Koch , Renzo Capelli
IPC分类号： G03F1/22 , G03F1/84 , G03F1/72 , G03F7/20
摘要： The invention relates to a method for examining a photolithographic mask for the extreme ultraviolet (EUV) wavelength range in a mask metrology apparatus. In this method, at least one structured region of the mask is selected, a scanner photon number in the extreme ultraviolet (EUV) wavelength range for which the mask in the lithographic production run is provided and a metrology photon number in the extreme ultraviolet (EUV) wavelength range with which the measurement is performed are determined. Next, a photon statistics examination mode is established on the basis of the scanner photon number and the metrology photon number and at least one aerial image of the at least one structured region is produced with the mask metrology apparatus.

3. 发明授权

US10055833B2 Method and system for EUV mask blank buried defect analysis 有权
公开(公告)号：US10055833B2
公开(公告)日：2018-08-21
申请号：US14952073
申请日：2015-11-25
申请人： Carl Zeiss SMT GmbH
发明人： Jan Hendrik Peters , Frederik Blumrich , Anthony Garetto , Thomas Scherübl , Renzo Capelli
IPC分类号： G01N23/203 , G06T7/00 , G03F1/84
CPC分类号： G06T7/0008 , G03F1/84
摘要： A reflective mask inspection system comprises a short wavelength radiation source for irradiating a reflective mask. A detector system detects the short wavelength radiation reflected from the reflective mask and a controller compares reflectance images of the reflective mask from the detector to characterize the mask. The system analyzes the spatially resolved reflectance characteristics of the substrate from different angles with respect to normal to the substrate and/or at different angles of rotation of the substrate. This information can be used to then analyze the mask for buried defects and then characterize those defects. This technique improves over current systems that rely on atomic force microscopes, which can only provide surface information.

4. 发明申请

US20220350258A1 METHOD FOR MEASURING AN EFFECT OF A WAVELENGTH-DEPENDENT MEASURING LIGHT REFLECTIVITY AND AN EFFECT OF A POLARIZATION OF MEASURING LIGHT ON A MEASURING LIGHT IMPINGEMENT ON A LITHOGRAPHY MASK 有权
公开(公告)号：US20220350258A1
公开(公告)日：2022-11-03
申请号：US17728144
申请日：2022-04-25
申请人： Carl Zeiss SMT GmbH
发明人： Walter Pauls , Renzo Capelli
IPC分类号： G03F7/20 , G01N21/55 , G01N21/21 , G01N21/956
摘要： To measure an effect of a wavelength-dependent measuring light reflectivity RRet of a lithography mask, a measuring light beam is caused to impinge on said lithography mask within a field of view of a measuring apparatus. The measuring light has a wavelength bandwidth between a wavelength lower limit and a wavelength upper limit differing therefrom. The reflected measuring light emanating from an impinged section of the lithography mask is captured by a detector. A filter with a wavelength-dependent transmission within the wavelength bandwidth is introduced into a beam path of the measuring light beam between the measuring light source and the detector. The measuring light reflected by the lithography mask is captured again by the detector once the filter has been introduced. The wavelength-dependent reflectivity RRet or an effect of the wavelength-dependent reflectivity RRet is determined on the basis of the capture results. In comparison with the prior art, this yields an improved method for measuring an effect of a measuring light reflectivity on a lithography mask. Additionally, a method for measuring an effect of a polarization of measuring light on a measuring light impingement on a lithography mask is specified, wherein as a result of this the effect of the lithography mask on measuring light is made accessible in respect of further optical parameters of a measurement.

5. 发明申请

US20220101569A1 METHOD FOR DETERMINING A PRODUCTION AERIAL IMAGE OF AN OBJECT TO BE MEASURED 有权
公开(公告)号：US20220101569A1
公开(公告)日：2022-03-31
申请号：US17547762
申请日：2021-12-10
申请人： Carl Zeiss SMT GmbH
发明人： Martin Dietzel , Renzo Capelli
IPC分类号： G06T11/00 , G03F7/20
摘要： In order to determine a production aerial image of an object to be measured as a result of an illumination and imaging with illumination and imaging conditions of an optical production system, firstly a measurement aerial image of the object to be measured is captured. This is carried out with illumination and imaging conditions of an optical measurement system, which conditions include a predefined measurement illumination setting. Data of the measurement aerial image are generated during the capturing. An object structure of the object to be measured is reconstructed from the data of the captured measurement aerial image by use of a reconstruction algorithm. Data of the reconstructed object structure are generated during the reconstructing. A production aerial image is simulated from the data of the reconstructed object structure with the illumination and imaging conditions of the optical production system. Said conditions include a production illumination setting, which is different than the measurement illumination setting. This results in a determining method in which the requirements made of an optical measurement system used in the determining method, even under demanding illumination and imaging conditions of the optical production system, are relaxed.

6. 发明授权

US10481505B2 Method for determining an imaging aberration contribution of an imaging optical unit for measuring lithography masks 有权
公开(公告)号：US10481505B2
公开(公告)日：2019-11-19
申请号：US16280494
申请日：2019-02-20
申请人： Carl Zeiss SMT GmbH
发明人： Markus Koch , Dirk Hellweg , Renzo Capelli , Martin Dietzel
IPC分类号： G03F7/20 , G03F1/84
摘要： Determining an imaging aberration contribution of an imaging optical unit for measuring lithography masks involves firstly focus-dependently measuring a 3D aerial image of the imaging optical unit as a sequence of 2D intensity distributions in different measurement planes in the region of and parallel to an image plane of an imaging of an object by use of the imaging optical unit. A spectrum of a speckle pattern of the 3D aerial image is then determined by Fourier transformation of the measured 2D intensity distributions having speckle patterns. For a plurality of spectral components in the frequency domain, a focus dependence of a real part RS(z) and an imaginary part IS(z) of said spectral component is then determined. From the determined values of the focus dependence of the real part RS(z) and the imaginary part IS(z), a contribution made to the speckle pattern spectrum by a mask structure, which contribution is to be eliminated, is then separated from an imaging aberration contribution made to the speckle pattern spectrum by the imaging optical unit. The imaging aberration contribution is then represented. This results in a method for determining the imaging aberration contribution of the imaging optical unit having little additional time expenditure in comparison with the measurement time on the respective lithography mask.

7. 发明申请

US20170176851A1 METHOD FOR PRODUCING A MASK FOR THE EXTREME ULTRAVIOLET WAVELENGTH RANGE, MASK AND DEVICE 审中-公开
公开(公告)号：US20170176851A1
公开(公告)日：2017-06-22
申请号：US15451522
申请日：2017-03-07
申请人： Carl Zeiss SMT GmbH
发明人： Jan-Hendrik Peters , Jörg Frederik Blumrich , Anthony Garetto , Renzo Capelli
IPC分类号： G03F1/72 , B05D5/00 , G03F1/22
CPC分类号： G03F1/72 , B05D5/005 , G03F1/22 , G03F1/24 , G03F1/84
摘要： A method for producing a mask for the extreme ultraviolet wavelength range proceeding from a mask blank having defects is provided. The method includes classifying the defects into at least one first group and one second group; optimizing the arrangement of an absorber pattern on the mask blank in order to compensate for a maximum number of the defects of the first group by means of the arranged absorber pattern; and applying the optimized absorber pattern to the mask blank.

8. 发明公开

US20240085779A1 METHOD AND APPARATUS FOR QUALIFYING A MASK FOR USE IN LITHOGRAPHY 审中-公开
公开(公告)号：US20240085779A1
公开(公告)日：2024-03-14
申请号：US18243769
申请日：2023-09-08
申请人： Carl Zeiss SMT GmbH
发明人： Renzo Capelli , Markus Koch , Tim Helbig , Sandro Hoffmann , Thomas Niederhausen , Grizelda Kersteen , Andreas Verch
IPC分类号： G03F1/44 , G03F1/52 , G03F1/54 , G03F1/84
CPC分类号： G03F1/44 , G03F1/52 , G03F1/54 , G03F1/84
摘要： A method for qualifying a mask for use in lithography is proposed. The method includes the following steps: a provision of an apparatus for qualifying a mask, the apparatus comprising an optical system and an evaluation and control device; a detection of at least one first phase difference of light at the mask by use of the optical system and the evaluation and control device; loading the mask; detecting at least one second phase difference of light at the mask by use of the optical system and the evaluation and control device; and implementing a comparison of the first phase difference with the second phase difference by use of the evaluation and control device.

9. 发明授权

US11796926B2 Metrology system for examining objects with EUV measurement light 有权
公开(公告)号：US11796926B2
公开(公告)日：2023-10-24
申请号：US17992034
申请日：2022-11-22
申请人： Carl Zeiss SMT GmbH
发明人： Renzo Capelli , Klaus Gwosch
IPC分类号： G03F7/20 , G03F1/84 , G03F7/00
CPC分类号： G03F7/7085 , G03F1/84 , G03F7/702 , G03F7/70033 , G03F7/70775
摘要： A metrology system serves for examining objects with EUV measurement light. An illumination optical unit serves for guiding the EUV measurement light towards the object to be examined. The illumination optical unit has an illumination optical unit stop for prescribing a measurement light intensity distribution in an illumination pupil in a pupil plane of the illumination optical unit. An output coupling mirror serves for coupling a part of the measurement light out of an illumination beam path of the illumination optical unit. The output coupling mirror has a mirror surface which is used to couple out measurement light and has an aspect ratio of a greatest mirror surface extent A longitudinally with respect to a mirror surface longitudinal dimension (x) to a smallest mirror surface extent B longitudinally with respect to a mirror surface transverse dimension (y) perpendicular to the mirror surface longitudinal dimension (x). The aspect ratio A/B is greater than 1.1. The result is a metrology system in which a measurement light throughput is optimized even in the simulation or emulation of an imaging optical unit of a projection exposure apparatus having an image-side numerical aperture of greater than 0.5 and in particular in the simulation or emulation of an anamorphic imaging optical unit.

10. 发明申请

US20210325775A1 METHOD AND APPARATUS FOR REPAIRING DEFECTS OF A PHOTOLITHOGRAPHIC MASK FOR THE EUV RANGE 有权
公开(公告)号：US20210325775A1
公开(公告)日：2021-10-21
申请号：US17360532
申请日：2021-06-28
申请人： Carl Zeiss SMT GmbH
发明人： Hendrik Steigerwald , Renzo Capelli
IPC分类号： G03F1/72 , G06F30/39 , G03F1/24 , G03F1/52
摘要： The invention relates to a method and an apparatus for repairing at least one defect of a photolithographic mask for the extreme ultraviolet (EUV) wavelength range, wherein the method includes the steps of: (a) determining the at least one defect; and (b) ascertaining a repair shape for the at least one defect; (c) wherein the repair shape is diffraction-based in order to take account of a phase disturbance by the at least one defect.

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