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1. 发明申请

US20070059611A1 Mask and manufacturing method thereof 有权
标题翻译：掩模及其制造方法
公开(公告)号：US20070059611A1
公开(公告)日：2007-03-15
申请号：US11444546
申请日：2006-05-31
申请人： Chun-Hao Tung , Chia-Tsung Lee , Hsien-Kai Tseng , Horino Shigekazu
发明人： Chun-Hao Tung , Chia-Tsung Lee , Hsien-Kai Tseng , Horino Shigekazu
IPC分类号： G03C5/00 , G03F1/00
CPC分类号： G03F1/32 , G03F1/54
摘要： A mask and a manufacturing method thereof are provided. A transparent substrate having three regions is provided first. A non-transmitting layer is formed in a first region of the transparent substrate. Then, a first photoresist layer is formed on the transparent substrate, and the first photoresist layer exposes a second region of the transparent substrate. Next, a first transmitting layer is formed on the transparent substrate and the first photoresist layer. Finally, the first photoresist layer is removed. The first transmitting layer on the first photoresist layer is removed at the same time and the first transmitting layer in the second region of the transparent substrate is remained and a third region of the transparent substrate is exposed. A lift-off process is used in the mask manufacturing method of the present invention to form the transmitting layer.
摘要翻译：提供了一种掩模及其制造方法。首先设置具有三个区域的透明基板。在透明基板的第一区域中形成非透光层。然后，在透明基板上形成第一光致抗蚀剂层，第一光致抗蚀剂层露出透明基板的第二区域。接下来，在透明基板和第一光致抗蚀剂层上形成第一透光层。最后，去除第一光致抗蚀剂层。同时去除第一光致抗蚀剂层上的第一透射层，并且保留透明基板的第二区域中的第一透射层，并露出透明基板的第三区域。在本发明的掩模制造方法中使用剥离处理来形成透射层。

2. 发明授权

US07704647B2 Mask and manufacturing method thereof 有权
标题翻译：掩模及其制造方法
公开(公告)号：US07704647B2
公开(公告)日：2010-04-27
申请号：US11444546
申请日：2006-05-31
申请人： Chun-Hao Tung , Chia-Tsung Lee , Hsien-Kai Tseng , Horino Shigekazu
发明人： Chun-Hao Tung , Chia-Tsung Lee , Hsien-Kai Tseng , Horino Shigekazu
IPC分类号： G03F1/00
CPC分类号： G03F1/32 , G03F1/54
摘要： A mask and a manufacturing method thereof are provided. A transparent substrate having three regions is provided first. A non-transmitting layer is formed in a first region of the transparent substrate. Then, a first photoresist layer is formed on the transparent substrate, and the first photoresist layer exposes a second region of the transparent substrate. Next, a first transmitting layer is formed on the transparent substrate and the first photoresist layer. Finally, the first photoresist layer is removed. The first transmitting layer on the first photoresist layer is removed at the same time and the first transmitting layer in the second region of the transparent substrate is remained and a third region of the transparent substrate is exposed. A lift-off process is used in the mask manufacturing method of the present invention to form the transmitting layer.
摘要翻译：提供了一种掩模及其制造方法。首先设置具有三个区域的透明基板。在透明基板的第一区域中形成非透光层。然后，在透明基板上形成第一光致抗蚀剂层，第一光致抗蚀剂层露出透明基板的第二区域。接下来，在透明基板和第一光致抗蚀剂层上形成第一透光层。最后，去除第一光致抗蚀剂层。同时去除第一光致抗蚀剂层上的第一透射层，并且保留透明基板的第二区域中的第一透射层，并露出透明基板的第三区域。在本发明的掩模制造方法中使用剥离处理来形成透射层。

3. 发明申请

US20090317731A1 MASK HAVING MULTIPLE TRANSMITTANCES 有权
标题翻译：掩蔽有多个发送
公开(公告)号：US20090317731A1
公开(公告)日：2009-12-24
申请号：US12547765
申请日：2009-08-26
申请人： CHUN-HAO TUNG , Chia-Tsung Lee , Hsien-Kai Tseng , Shigekazu Horino
发明人： CHUN-HAO TUNG , Chia-Tsung Lee , Hsien-Kai Tseng , Shigekazu Horino
IPC分类号： G03F1/00
CPC分类号： G03F1/32 , G03F1/54
摘要： A mask including a transparent substrate, a non-transmitting layer, a first transmitting layer and a second transmitting layer is provided. The transparent substrate has a first region, a second region, and a third region. The non-transmitting layer is disposed in the first region of the transparent substrate. The first transmitting layer is disposed in the second region and the third region of the transparent substrate. The second transmitting layer is disposed on the first transmitting layer in the third region.
摘要翻译：提供了包括透明衬底，非透射层，第一透射层和第二透射层的掩模。透明基板具有第一区域，第二区域和第三区域。非透射层设置在透明基板的第一区域中。第一透射层设置在透明基板的第二区域和第三区域中。第二发送层设置在第三区域的第一发送层上。

4. 发明授权

US07776497B2 Mask having multiple transmittances 有权
标题翻译：具有多个透射率的掩模
公开(公告)号：US07776497B2
公开(公告)日：2010-08-17
申请号：US12547765
申请日：2009-08-26
申请人： Chun-Hao Tung , Chia-Tsung Lee , Hsien-Kai Tseng , Shigekazu Horino
发明人： Chun-Hao Tung , Chia-Tsung Lee , Hsien-Kai Tseng , Shigekazu Horino
IPC分类号： G03F1/00
CPC分类号： G03F1/32 , G03F1/54
摘要： A mask including a transparent substrate, a non-transmitting layer, a first transmitting layer and a second transmitting layer is provided. The transparent substrate has a first region, a second region, and a third region. The non-transmitting layer is disposed in the first region of the transparent substrate. The first transmitting layer is disposed in the second region and the third region of the transparent substrate. The second transmitting layer is disposed on the first transmitting layer in the third region.
摘要翻译：提供了包括透明衬底，非透射层，第一透射层和第二透射层的掩模。透明基板具有第一区域，第二区域和第三区域。非透射层设置在透明基板的第一区域中。第一透射层设置在透明基板的第二区域和第三区域中。第二发送层设置在第三区域的第一发送层上。

5. 发明授权

US08314423B2 Thin film transistor array substrate and manufacturing method thereof 有权
标题翻译：薄膜晶体管阵列基板及其制造方法
公开(公告)号：US08314423B2
公开(公告)日：2012-11-20
申请号：US12560428
申请日：2009-09-16
申请人： Chien-Hung Chen , Lih-Hsiung Chan , Chin-Yueh Liao , Hsien-Kai Tseng
发明人： Chien-Hung Chen , Lih-Hsiung Chan , Chin-Yueh Liao , Hsien-Kai Tseng
IPC分类号： H01L29/786
CPC分类号： H01L27/1288 , H01L27/1214 , H01L27/124 , H01L27/1248
摘要： A thin film transistor array substrate and a manufacturing method thereof are provided. In the manufacturing method, a first patterned conductive layer including a plurality of scan lines and a plurality of gates connected with the scan lines is formed on a substrate. A patterned gate insulating layer having a plurality of openings is then formed on the substrate to cover at least a portion of the first patterned conductive layer, and a plurality of dielectric patterns are formed in the openings. A plurality of semiconductor patterns are formed on the patterned gate insulating layer. A second patterned conductive layer is formed on the semiconductor patterns, the patterned gate insulating layer, and the dielectric patterns. A passivation layer is formed on the semiconductor patterns, the patterned gate insulating layer, and the dielectric patterns. A plurality of pixel electrodes are formed on the passivation layer.
摘要翻译：提供薄膜晶体管阵列基板及其制造方法。在制造方法中，在基板上形成包括多条扫描线的第一图案化导电层和与扫描线连接的多个栅极。然后在衬底上形成具有多个开口的图案化栅极绝缘层，以覆盖第一图案化导电层的至少一部分，并且在开口中形成多个电介质图案。在图案化的栅极绝缘层上形成多个半导体图案。在半导体图案，图案化栅极绝缘层和电介质图案上形成第二图案化导电层。在半导体图案，图案化栅绝缘层和电介质图案上形成钝化层。在钝化层上形成多个像素电极。

6. 发明申请

US20100320466A1 THIN FILM TRANSISTOR ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：薄膜晶体管阵列基板及其制造方法
公开(公告)号：US20100320466A1
公开(公告)日：2010-12-23
申请号：US12560428
申请日：2009-09-16
申请人： Chien-Hung Chen , Lih-Hsiung Chan , Chin-Yueh Liao , Hsien-Kai Tseng
发明人： Chien-Hung Chen , Lih-Hsiung Chan , Chin-Yueh Liao , Hsien-Kai Tseng
IPC分类号： H01L33/00 , H01L21/28
CPC分类号： H01L27/1288 , H01L27/1214 , H01L27/124 , H01L27/1248
摘要： A thin film transistor array substrate and a manufacturing method thereof are provided. In the manufacturing method, a first patterned conductive layer including a plurality of scan lines and a plurality of gates connected with the scan lines is formed on a substrate. A patterned gate insulating layer having a plurality of openings is then formed on the substrate to cover at least a portion of the first patterned conductive layer, and a plurality of dielectric patterns are formed in the openings. A plurality of semiconductor patterns are formed on the patterned gate insulating layer. A second patterned conductive layer is formed on the semiconductor patterns, the patterned gate insulating layer, and the dielectric patterns. A passivation layer is formed on the semiconductor patterns, the patterned gate insulating layer, and the dielectric patterns. A plurality of pixel electrodes are formed on the passivation layer.
摘要翻译：提供薄膜晶体管阵列基板及其制造方法。在制造方法中，在基板上形成包括多条扫描线的第一图案化导电层和与扫描线连接的多个栅极。然后在衬底上形成具有多个开口的图案化栅极绝缘层，以覆盖第一图案化导电层的至少一部分，并且在开口中形成多个电介质图案。在图案化的栅极绝缘层上形成多个半导体图案。在半导体图案，图案化栅极绝缘层和电介质图案上形成第二图案化导电层。在半导体图案，图案化栅绝缘层和电介质图案上形成钝化层。在钝化层上形成多个像素电极。

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