专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08436092B2 Giant magnetoresistance composite material containing carbon nanotubes 有权
标题翻译：含有碳纳米管的巨磁电复合材料
公开(公告)号：US08436092B2
公开(公告)日：2013-05-07
申请号：US12584464
申请日：2009-09-03
申请人： Chun-Hua Hu , Chang-Hong Liu , Shou-Shan Fan
发明人： Chun-Hua Hu , Chang-Hong Liu , Shou-Shan Fan
IPC分类号： C08L83/04
CPC分类号： H01L43/08 , C08K3/041 , C08K7/22 , C08L63/00 , C08L75/04 , H01L43/10
摘要： A GMR material includes a polymer matrix and a plurality of carbon nanotubes. The plurality of carbon nanotubes are dispersed in such a manner that substantially none of the plurality of carbon nanotubes are in contact with each other.
摘要翻译： GMR材料包括聚合物基质和多个碳纳米管。多个碳纳米管以这样的方式分散，使得多个碳纳米管基本上彼此不接触。

2. 发明授权

US08274076B2 Diode employing with carbon nanotube 有权
标题翻译：二极管采用碳纳米管
公开(公告)号：US08274076B2
公开(公告)日：2012-09-25
申请号：US12791037
申请日：2010-06-01
申请人： Chun-Hua Hu , Chang-Hong Liu , Shou-Shan Fan
发明人： Chun-Hua Hu , Chang-Hong Liu , Shou-Shan Fan
IPC分类号： H01L35/24
CPC分类号： H01L51/0579 , B82Y10/00 , H01L51/0048 , H01L51/0566
摘要： A diode includes an organic composite plate, a first electrode and a second electrode. The organic composite plate includes a first portion, a second portion and a plurality of carbon nanotubes distributed therein. The carbon nanotubes in the first portion have a first band gap and the carbon nanotubes in the second portion have a second band gap. The first band gap and the second band gap are different from each other. The first electrode is electrically connected to the first portion. The second electrode electrically is connected to the second portion.
摘要翻译：二极管包括有机复合板，第一电极和第二电极。有机复合板包括分布在其中的第一部分，第二部分和多个碳纳米管。第一部分中的碳纳米管具有第一带隙，并且第二部分中的碳纳米管具有第二带隙。第一带隙和第二带隙彼此不同。第一电极电连接到第一部分。第二电极电连接到第二部分。

3. 发明授权

US08492755B2 Thin film transistor and press sensing device using the same 有权
标题翻译：薄膜晶体管和压敏传感器使用相同
公开(公告)号：US08492755B2
公开(公告)日：2013-07-23
申请号：US13323911
申请日：2011-12-13
申请人： Chun-Hua Hu , Chang-Hong Liu , Shou-Shan Fan
发明人： Chun-Hua Hu , Chang-Hong Liu , Shou-Shan Fan
IPC分类号： H01L35/24 , H01L51/00
CPC分类号： H01L29/42384 , H01L29/4908
摘要： A thin film transistor and a press sensing device using the thin film transistor are disclosed. The thin film transistor, comprises a source electrode; a drain electrode spaced from the source electrode; a semiconductor layer electrically connected with the source electrode and the drain electrode, a channel defined in the semiconductor layer and located between the source electrode and the drain electrode; and a gate electrode electrically insulated from the semiconductor layer; and an insulative layer configured for insulating the source electrode, the drain electrode, and the semiconductor layer from each other, wherein the insulative layer is made of a polymeric material with an elastic modulus ranged from about 0.1 megapascal (MPa) to about 10 MPa.
摘要翻译：公开了一种使用该薄膜晶体管的薄膜晶体管和压敏元件。薄膜晶体管包括源电极; 与源电极间隔开的漏电极; 与源电极和漏电极电连接的半导体层，限定在半导体层中并位于源电极和漏电极之间的沟道; 和与半导体层电绝缘的栅电极; 以及被配置为将源电极，漏电极和半导体层彼此绝缘的绝缘层，其中绝缘层由弹性模量范围为约0.1兆帕（MPa）至约10MPa的聚合材料制成。

4. 发明授权

US08499817B2 Method for making carbon nanotube metal composite 有权
标题翻译：制作碳纳米管金属复合材料的方法
公开(公告)号：US08499817B2
公开(公告)日：2013-08-06
申请号：US12905428
申请日：2010-10-15
申请人： Chun-Hua Hu , Chang-Hong Liu , Shou-Shan Fan
发明人： Chun-Hua Hu , Chang-Hong Liu , Shou-Shan Fan
IPC分类号： B22D19/14
CPC分类号： C22C26/00 , C22C1/055
摘要： A method for making a carbon nanotube metal composite includes the following steps. A number of carbon nanotubes is dispersed in a solvent to obtain a suspension. Metal powder is added into the suspension, and then the suspension agitated. The suspension containing the metal powder is allowed to stand for a while. The solvent is reduced to obtain a mixture of the number of carbon nanotubes and the metal powder.
摘要翻译：制造碳纳米管金属复合体的方法包括以下步骤。将许多碳纳米管分散在溶剂中以获得悬浮液。将金属粉末加入到悬浮液中，然后搅拌悬浮液。将含有金属粉末的悬浮液静置一段时间。减少溶剂以获得碳纳米管和金属粉末的数量的混合物。

5. 发明申请

US20100181521A1 Giant Magnetoresistance Composite Material Containing Carbon Nanotubes 有权
标题翻译：含有碳纳米管的巨磁阻复合材料
公开(公告)号：US20100181521A1
公开(公告)日：2010-07-22
申请号：US12584464
申请日：2009-09-03
申请人： Chun-Hua Hu , Chang-Hong Liu , Shou-Shan Fan
发明人： Chun-Hua Hu , Chang-Hong Liu , Shou-Shan Fan
IPC分类号： H01F1/26 , B82B1/00
CPC分类号： H01L43/08 , C08K3/041 , C08K7/22 , C08L63/00 , C08L75/04 , H01L43/10
摘要： A GMR material includes a polymer matrix and a plurality of carbon nanotubes. The plurality of carbon nanotubes are dispersed in such a manner that substantially none of the plurality of carbon nanotubes are in contact with each other.
摘要翻译： GMR材料包括聚合物基质和多个碳纳米管。多个碳纳米管以这样的方式分散，使得多个碳纳米管基本上彼此不接触。

6. 发明授权

US08987581B2 Solar thermoelectric cell with covering structure to provide thermal gradient 有权
标题翻译：具有覆盖结构的太阳能热电池提供热梯度
公开(公告)号：US08987581B2
公开(公告)日：2015-03-24
申请号：US12876357
申请日：2010-09-07
申请人： Chun-Hua Hu , Chang-Hong Liu , Shou-Shan Fan
发明人： Chun-Hua Hu , Chang-Hong Liu , Shou-Shan Fan
IPC分类号： H01L35/00 , H01L35/32
CPC分类号： H01L35/32 , Y10S977/742
摘要： A photoelectric cell includes at least one photoelectric conversion module. The photoelectric module includes a first photoelectric conversion element and a second photoelectric conversion element. The first photoelectric conversion element is made of a first thermoelectric material having positive thermoelectric coefficient and comprises a first absorbing part and a first non-absorbing part. The second photoelectric conversion element is made of a second thermoelectric material having negative thermoelectric coefficient and comprises a second absorbing part and a second non-absorbing part. The first absorbing part is electrically connected with the second absorbing part.
摘要翻译：光电池包括至少一个光电转换模块。光电模块包括第一光电转换元件和第二光电转换元件。第一光电转换元件由具有正热电系数的第一热电材料制成，并且包括第一吸收部分和第一非吸收部分。第二光电转换元件由具有负热电系数的第二热电材料制成，并且包括第二吸收部分和第二非吸收部分。第一吸收部与第二吸收部电连接。

7. 发明授权

US07759678B2 Diode employing with carbon nanotube 有权
公开(公告)号：US07759678B2
公开(公告)日：2010-07-20
申请号：US12381030
申请日：2009-03-05
申请人： Chun-Hua Hu , Chang-Hong Liu , Shou-Shan Fan
发明人： Chun-Hua Hu , Chang-Hong Liu , Shou-Shan Fan
IPC分类号： H01L35/24
CPC分类号： H01L51/0579 , B82Y10/00 , H01L51/0048 , H01L51/0566
摘要： A diode includes an organic composite plate, a pressing element, a first electrode, and a second electrode. The organic composite plate has a plurality of carbon nanotubes uniformly distributed therein and includes a first portion and a second portion opposite to the first portion. The pressing element is disposed on the first portion of the organic composite plate. The first and second electrodes are electrically connected to the first and second portions of the organic composite plate, respectively. The diode employed with the carbon nanotubes has a changeable characteristic, such as voltage, current, via controlling the pressure applied by the pressing element.

8. 发明申请

US20100006829A1 Diode employing with carbon nanotube 有权
标题翻译：二极管采用碳纳米管
公开(公告)号：US20100006829A1
公开(公告)日：2010-01-14
申请号：US12381030
申请日：2009-03-05
申请人： Chun-Hua Hu , Chang-Hong Liu , Shou-Shan Fan
发明人： Chun-Hua Hu , Chang-Hong Liu , Shou-Shan Fan
IPC分类号： H01L51/30
CPC分类号： H01L51/0579 , B82Y10/00 , H01L51/0048 , H01L51/0566
摘要： A diode includes an organic composite plate, a pressing element, a first electrode, and a second electrode. The organic composite plate has a plurality of carbon nanotubes uniformly distributed therein and includes a first portion and a second portion opposite to the first portion. The pressing element is disposed on the first portion of the organic composite plate. The first and second electrodes are electrically connected to the first and second portions of the organic composite plate, respectively. The diode employed with the carbon nanotubes has a changeable characteristic, such as voltage, current, via controlling the pressure applied by the pressing element.
摘要翻译：二极管包括有机复合板，按压元件，第一电极和第二电极。有机复合板具有均匀分布在其中的多个碳纳米管，并且包括与第一部分相对的第一部分和第二部分。按压元件设置在有机复合板的第一部分上。第一和第二电极分别电连接到有机复合板的第一和第二部分。与碳纳米管一起使用的二极管通过控制由按压元件施加的压力而具有可变的特性，例如电压，电流。

9. 发明授权

US09541453B2 Infrared detector 有权
标题翻译：红外探测器
公开(公告)号：US09541453B2
公开(公告)日：2017-01-10
申请号：US12876352
申请日：2010-09-07
申请人： Chun-Hua Hu , Chang-Hong Liu , Shou-Shan Fan
发明人： Chun-Hua Hu , Chang-Hong Liu , Shou-Shan Fan
IPC分类号： G01J5/16 , G01J5/12 , G01J5/14 , G01J5/04 , B82Y30/00 , H01L51/00 , H01L51/44 , H01L31/0256 , G01J5/02 , H01L35/32 , G01J5/06 , G01J1/16
CPC分类号： G01J5/16 , B82Y30/00 , G01J1/1626 , G01J5/02 , G01J5/023 , G01J5/04 , G01J5/048 , G01J5/12 , G01J5/14 , G01J2005/065 , G01J2005/068 , G01N2201/022 , H01L35/32 , H01L51/0048 , H01L51/441 , H01L51/448 , H01L2031/0344
摘要： An infrared detector includes a detecting element, a first electrode, a second electrode, and a covering structure. The detecting element defines an absorbing part and a non-absorbing part. The detecting element includes a first end and a second end opposite with the first end. The first end is disposed in the absorbing part. The second end is disposed in the non-absorbing part. The first electrode is electrically connected with the first end. The second electrode is electrically connected with the second end. The covering structure covers the non-absorbing part. The detecting element further includes a carbon nanotube layer. The carbon nanotube layer includes a plurality of carbon nanotubes disposed uniformly.
摘要翻译：红外检测器包括检测元件，第一电极，第二电极和覆盖结构。检测元件限定吸收部分和非吸收部分。检测元件包括第一端和与第一端相对的第二端。第一端设置在吸收部中。第二端设置在非吸收部。第一电极与第一端电连接。第二电极与第二端电连接。覆盖结构覆盖非吸收部分。检测元件还包括碳纳米管层。碳纳米管层包括均匀排列的多个碳纳米管。

10. 发明授权

US08809107B2 Method for making Schottky barrier diode 有权
标题翻译：制造肖特基势垒二极管的方法
公开(公告)号：US08809107B2
公开(公告)日：2014-08-19
申请号：US13337235
申请日：2011-12-26
申请人： Chun-Hua Hu , Chang-Hong Liu , Shou-Shan Fan
发明人： Chun-Hua Hu , Chang-Hong Liu , Shou-Shan Fan
IPC分类号： H01L21/04 , H01L51/05 , H01L51/00
CPC分类号： H01L51/0579 , B82Y10/00 , H01L51/0048 , Y10S977/742
摘要： A method for making a Schottky barrier diode includes the following steps. A first metal layer, a second metal layer and a carbon nanotube composite material are provided. The carbon nanotube composite material is applied on the first metal layer and the second metal layer to form a semiconductor layer. The carbon nanotube composite material includes an insulated polymer and a number of carbon nanotubes dispersed in the insulated polymer. The semiconductor layer is in Schottky contact with the first metal layer and in ohmic contact with the second metal layer.
摘要翻译：制造肖特基势垒二极管的方法包括以下步骤。提供第一金属层，第二金属层和碳纳米管复合材料。将碳纳米管复合材料施加在第一金属层和第二金属层上以形成半导体层。碳纳米管复合材料包括绝缘聚合物和分散在绝缘聚合物中的多个碳纳米管。半导体层与第一金属层肖特基接触并与第二金属层欧姆接触。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式