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1. 发明授权

US08368130B2 Method and device to reduce dark current in image sensors 有权
标题翻译：降低图像传感器暗电流的方法和装置
公开(公告)号：US08368130B2
公开(公告)日：2013-02-05
申请号：US12968047
申请日：2010-12-14
申请人： Chun-Yao Ko , Chung-Wei Chang , Han-Chi Liu , Shou-Gwo Wuu
发明人： Chun-Yao Ko , Chung-Wei Chang , Han-Chi Liu , Shou-Gwo Wuu
IPC分类号： H01L27/146 , H01L31/0232 , H01L31/0352
CPC分类号： H01L27/14689 , H01L27/14609
摘要： A method to fabricate an image sensor includes providing a semiconductor substrate having a pixel area and a logic area, forming a light sensing element in the pixel area, and forming a first transistor in the pixel area and a second transistor in the logic area. The step of forming the first transistor in the pixel area and the second transistor in the logic area includes performing a first implant process in the pixel area and the logic area, performing a second implant process in the pixel area and the logic area, and performing a third implant process only in the logic area.
摘要翻译：制造图像传感器的方法包括提供具有像素区域和逻辑区域的半导体衬底，在像素区域中形成光感测元件，以及在像素区域中形成第一晶体管和在逻辑区域中形成第二晶体管。在逻辑区域中的像素区域和第二晶体管中形成第一晶体管的步骤包括在像素区域和逻辑区域中执行第一注入处理，在像素区域和逻辑区域中执行第二注入处理，以及执行仅在逻辑区域中进行第三次植入过程。

2. 发明申请

US20110133260A1 METHOD AND DEVICE TO REDUCE DARK CURRENT IN IMAGE SENSORS 有权
标题翻译：减少图像传感器中的暗电流的方法和装置
公开(公告)号：US20110133260A1
公开(公告)日：2011-06-09
申请号：US12968047
申请日：2010-12-14
申请人： Chun-Yao Ko , Chung-Wei Chang , Han-Chi Liu , Shou-Gwo Wuu
发明人： Chun-Yao Ko , Chung-Wei Chang , Han-Chi Liu , Shou-Gwo Wuu
IPC分类号： H01L31/113
CPC分类号： H01L27/14689 , H01L27/14609
摘要： A method to fabricate an image sensor includes providing a semiconductor substrate having a pixel area and a logic area, forming a light sensing element in the pixel area, and forming a first transistor in the pixel area and a second transistor in the logic area. The step of forming the first transistor in the pixel area and the second transistor in the logic area includes performing a first implant process in the pixel area and the logic area, performing a second implant process in the pixel area and the logic area, and performing a third implant process only in the logic area.
摘要翻译：制造图像传感器的方法包括提供具有像素区域和逻辑区域的半导体衬底，在像素区域中形成光感测元件，以及在像素区域中形成第一晶体管和在逻辑区域中形成第二晶体管。在逻辑区域中的像素区域和第二晶体管中形成第一晶体管的步骤包括在像素区域和逻辑区域中执行第一注入处理，在像素区域和逻辑区域中执行第二注入处理，以及执行仅在逻辑区域中进行第三次植入过程。

3. 发明申请

US20100221865A1 Crosstalk Improvement Through P On N Structure For Image Sensor 有权
标题翻译：通过P图像传感器的N结构进行串扰改善
公开(公告)号：US20100221865A1
公开(公告)日：2010-09-02
申请号：US12780625
申请日：2010-05-14
申请人： Chung-Wei Chang , Han-Chi Liu , Chun-Yao Ko , Shou-Gwo Wuu
发明人： Chung-Wei Chang , Han-Chi Liu , Chun-Yao Ko , Shou-Gwo Wuu
IPC分类号： H01L31/18
CPC分类号： H01L27/1463 , H01L21/761 , H01L27/14603 , H01L27/14609 , H01L27/14621 , H01L27/14627 , H01L27/14643 , H01L27/14689 , H01L31/035272
摘要： The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a semiconductor substrate having a first type of dopant; a semiconductor layer having a second type of dopant different from the first type of dopant and disposed on the semiconductor substrate; and an image sensor formed in the semiconductor layer.
摘要翻译：本公开提供了一种图像传感器半导体器件。半导体器件包括具有第一类掺杂剂的半导体衬底; 半导体层，其具有不同于所述第一类型掺杂剂的第二类型的掺杂剂并且设置在所述半导体衬底上; 以及形成在半导体层中的图像传感器。

4. 发明授权

US07388187B1 Cross-talk reduction through deep pixel well implant for image sensors 有权
标题翻译：通过图像传感器的深像素阱植入进行串扰减少
公开(公告)号：US07388187B1
公开(公告)日：2008-06-17
申请号：US11682428
申请日：2007-03-06
申请人： Han-Chi Liu , Chung-Wei Chang , Shou-Gwo Wuu , Tong-Chern Ong , Chun-Yao Ko
发明人： Han-Chi Liu , Chung-Wei Chang , Shou-Gwo Wuu , Tong-Chern Ong , Chun-Yao Ko
IPC分类号： H01L31/00
CPC分类号： H01L27/14654 , H01L27/1463
摘要： An image sensor device includes a semiconductor substrate having a first type of conductivity, a semiconductor layer having the first type of conductivity formed on the semiconductor substrate, and pixels formed in the semiconductor layer. The semiconductor layer includes a first deep well having the first type of conductivity and substantially underlying the plurality of pixels, and a second deep well having a second type of conductivity different from the first type of conductivity and substantially underlying the first deep well.
摘要翻译：图像传感器装置包括具有第一导电类型的半导体衬底，在半导体衬底上形成具有第一类型导电性的半导体层和形成在半导体层中的像素。半导体层包括具有第一类型导电性并且基本上位于多个像素下面的第一深阱，以及具有不同于第一类型导电性的第二类型导电性并且基本上位于第一深阱的第二深阱。

5. 发明申请

US20080105944A1 Crosstalk Improvement Through P on N Structure For Image Sensor 有权
标题翻译：通过P对图像传感器的N结构进行串扰改进
公开(公告)号：US20080105944A1
公开(公告)日：2008-05-08
申请号：US11682350
申请日：2007-03-06
申请人： Chung-Wei Chang , Han-Chi Liu , Chun-Yao Ko , Shou-Gwo Wuu
发明人： Chung-Wei Chang , Han-Chi Liu , Chun-Yao Ko , Shou-Gwo Wuu
IPC分类号： H01L31/06 , H01L31/068
CPC分类号： H01L27/1463 , H01L21/761 , H01L27/14603 , H01L27/14609 , H01L27/14621 , H01L27/14627 , H01L27/14643 , H01L27/14689 , H01L31/035272
摘要： The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a semiconductor substrate having a first type of dopant; a semiconductor layer having a second type of dopant different from the first type of dopant and disposed on the semiconductor substrate; and an image sensor formed in the semiconductor layer.
摘要翻译：本公开提供了一种图像传感器半导体器件。半导体器件包括具有第一类掺杂剂的半导体衬底; 半导体层，其具有不同于所述第一类型掺杂剂的第二类型的掺杂剂并且设置在所述半导体衬底上; 以及形成在半导体层中的图像传感器。

6. 发明授权

US08669133B2 Crosstalk improvement through P on N structure for image sensor 有权
标题翻译：通过P on N结构对图像传感器进行串扰改善
公开(公告)号：US08669133B2
公开(公告)日：2014-03-11
申请号：US12780625
申请日：2010-05-14
申请人： Chung-Wei Chang , Han-Chi Liu , Chun-Yao Ko , Shou-Gwo Wuu
发明人： Chung-Wei Chang , Han-Chi Liu , Chun-Yao Ko , Shou-Gwo Wuu
IPC分类号： H01L21/00
CPC分类号： H01L27/1463 , H01L21/761 , H01L27/14603 , H01L27/14609 , H01L27/14621 , H01L27/14627 , H01L27/14643 , H01L27/14689 , H01L31/035272
摘要： The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a semiconductor substrate having a first type of dopant; a semiconductor layer having a second type of dopant different from the first type of dopant and disposed on the semiconductor substrate; and an image sensor formed in the semiconductor layer.
摘要翻译：本公开提供了一种图像传感器半导体器件。半导体器件包括具有第一类掺杂剂的半导体衬底; 半导体层，其具有不同于所述第一类型掺杂剂的第二类型的掺杂剂并且设置在所述半导体衬底上; 以及形成在半导体层中的图像传感器。

7. 发明授权

US07879639B2 Method and device to reduce dark current in image sensors 有权
标题翻译：降低图像传感器暗电流的方法和装置
公开(公告)号：US07879639B2
公开(公告)日：2011-02-01
申请号：US11735226
申请日：2007-04-13
申请人： Chun-Yao Ko , Chung-Wei Chang , Han-Chi Liu , Shou-Gwo Wuu
发明人： Chun-Yao Ko , Chung-Wei Chang , Han-Chi Liu , Shou-Gwo Wuu
IPC分类号： H01L21/00
CPC分类号： H01L27/14689 , H01L27/14609
摘要： A method to fabricate an image sensor includes providing a semiconductor substrate having a pixel area and a logic area, forming a light sensing element in the pixel area, and forming a first transistor in the pixel area and a second transistor in the logic area. The step of forming the first transistor in the pixel area and the second transistor in the logic area includes performing a first implant process in the pixel area and the logic area, performing a second implant process in the pixel area and the logic area, and performing a third implant process only in the logic area.
摘要翻译：制造图像传感器的方法包括提供具有像素区域和逻辑区域的半导体衬底，在像素区域中形成光感测元件，以及在像素区域中形成第一晶体管和在逻辑区域中形成第二晶体管。在逻辑区域中的像素区域和第二晶体管中形成第一晶体管的步骤包括在像素区域和逻辑区域中执行第一注入处理，在像素区域和逻辑区域中执行第二注入处理，以及执行仅在逻辑区域中进行第三次植入过程。

8. 发明授权

US07732844B2 Crosstalk improvement through P on N structure for image sensor 有权
标题翻译：通过P on N结构对图像传感器进行串扰改善
公开(公告)号：US07732844B2
公开(公告)日：2010-06-08
申请号：US11682350
申请日：2007-03-06
申请人： Chung-Wei Chang , Han-Chi Liu , Chun-Yao Ko , Shou-Gwo Wuu
发明人： Chung-Wei Chang , Han-Chi Liu , Chun-Yao Ko , Shou-Gwo Wuu
IPC分类号： H01L31/062
CPC分类号： H01L27/1463 , H01L21/761 , H01L27/14603 , H01L27/14609 , H01L27/14621 , H01L27/14627 , H01L27/14643 , H01L27/14689 , H01L31/035272
摘要： The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a semiconductor substrate having a first type of dopant; a semiconductor layer having a second type of dopant different from the first type of dopant and disposed on the semiconductor substrate; and an image sensor formed in the semiconductor layer.
摘要翻译：本公开提供了一种图像传感器半导体器件。半导体器件包括具有第一类掺杂剂的半导体衬底; 半导体层，其具有不同于所述第一类型掺杂剂的第二类型的掺杂剂并且设置在所述半导体衬底上; 以及形成在半导体层中的图像传感器。

9. 发明申请

US20080251821A1 METHOD AND DEVICE TO REDUCE DARK CURRENT IN IMAGE SENSORS 有权
标题翻译：减少图像传感器中的暗电流的方法和装置
公开(公告)号：US20080251821A1
公开(公告)日：2008-10-16
申请号：US11735226
申请日：2007-04-13
申请人： Chun-Yao Ko , Chung-Wei Chang , Han-Chi Liu , Shou-Gwo Wuu
发明人： Chun-Yao Ko , Chung-Wei Chang , Han-Chi Liu , Shou-Gwo Wuu
IPC分类号： H01L31/062 , H01L21/00
CPC分类号： H01L27/14689 , H01L27/14609
摘要： A method to fabricate an image sensor includes providing a semiconductor substrate having a pixel area and a logic area, forming a light sensing element in the pixel area, and forming a first transistor in the pixel area and a second transistor in the logic area. The step of forming the first transistor in the pixel area and the second transistor in the logic area includes performing a first implant process in the pixel area and the logic area, performing a second implant process in the pixel area and the logic area, and performing a third implant process only in the logic area.
摘要翻译：制造图像传感器的方法包括提供具有像素区域和逻辑区域的半导体衬底，在像素区域中形成光感测元件，以及在像素区域中形成第一晶体管和在逻辑区域中形成第二晶体管。在逻辑区域中的像素区域和第二晶体管中形成第一晶体管的步骤包括在像素区域和逻辑区域中执行第一注入处理，在像素区域和逻辑区域中执行第二注入处理，以及执行仅在逻辑区域中进行第三次植入过程。

10. 发明授权

US08912619B2 Ultra-violet light sensing device and manufacturing method thereof 有权
标题翻译：紫外光检测装置及其制造方法
公开(公告)号：US08912619B2
公开(公告)日：2014-12-16
申请号：US13907437
申请日：2013-05-31
申请人： Han-Chi Liu , Huan-Kun Pan , Eiichi Okamoto
发明人： Han-Chi Liu , Huan-Kun Pan , Eiichi Okamoto
IPC分类号： H01L33/00 , H01L21/00 , H01L31/0248
CPC分类号： H01L31/0248 , H01L31/03529 , H01L31/103 , Y02E10/50
摘要： The present invention provides an ultra-violet light sensing device. The ultra-violet light sensing device includes a first conductivity type substrate, a second conductivity type region, and a first conductivity type high density region. The first conductivity type substrate includes a light incident surface. The second conductivity type region is disposed in the first conductivity type substrate and adjacent to the light incident surface. The first conductivity type high density region is disposed under the second conductivity type region. The present invention also provides another ultra-violet light sensing device, which further includes a first conductivity type high density shallow region which is sandwiched between the light incident surface and the second conductivity type region. Manufacturing methods for these ultra-violet light sensing devices are also disclosed in the present invention.
摘要翻译：本发明提供一种紫外线感测装置。紫外线感测装置包括第一导电型基板，第二导电型区域和第一导电型高密度区域。第一导电型基板包括光入射面。第二导电类型区域设置在第一导电类型基板中并与光入射表面相邻。第一导电型高密度区域设置在第二导电类型区域的下方。本发明还提供另一种紫外线感测装置，其还包括夹在光入射表面和第二导电类型区域之间的第一导电类型的高密度浅区域。本发明还公开了这些紫外线感测装置的制造方法。

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