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1. 发明授权

US08648465B2 Semiconductor interconnect structure having enhanced performance and reliability 有权
公开(公告)号：US08648465B2
公开(公告)日：2014-02-11
申请号：US13246904
申请日：2011-09-28
申请人： Cyril Cabral, Jr. , Geraud Jean-Michel Dubois , Daniel C. Edelstein , Takeshi Nogami , Daniel P. Sanders
发明人： Cyril Cabral, Jr. , Geraud Jean-Michel Dubois , Daniel C. Edelstein , Takeshi Nogami , Daniel P. Sanders
IPC分类号： H01L23/48
CPC分类号： H01L23/5226 , H01L21/76831 , H01L21/76846 , H01L21/76849 , H01L21/76867 , H01L21/76873 , H01L23/53209 , H01L23/53223 , H01L23/53238 , H01L23/53266 , H01L2924/0002 , H01L2924/00
摘要： An interconnect structure and method for fabricating the interconnect structure having enhanced performance and reliability, by minimizing oxygen intrusion into a seed layer and an electroplated copper layer of the interconnect structure, are disclosed. At least one opening in a dielectric layer is formed. A sacrificial oxidation layer disposed on the dielectric layer is formed. The sacrificial oxidation layer minimizes oxygen intrusion into the seed layer and the electroplated copper layer of the interconnect structure. A barrier metal layer disposed on the sacrificial oxidation layer is formed. A seed layer disposed on the barrier metal layer is formed. An electroplated copper layer disposed on the seed layer is formed. A planarized surface is formed, wherein a portion of the sacrificial oxidation layer, the barrier metal layer, the seed layer, and the electroplated copper layer are removed. In addition, a capping layer disposed on the planarized surface is formed.

2. 发明申请

US20130075908A1 SEMICONDUCTOR INTERCONNECT STRUCTURE HAVING ENHANCED PERFORMANCE AND RELIABILITY 有权
标题翻译：具有增强性能和可靠性的半导体互连结构
公开(公告)号：US20130075908A1
公开(公告)日：2013-03-28
申请号：US13246904
申请日：2011-09-28
申请人： Cyril Cabral, JR. , Geraud Jean-Michel Dubois , Daniel C. Edelstein , Takeshi Nogami , Daniel P. Sanders
发明人： Cyril Cabral, JR. , Geraud Jean-Michel Dubois , Daniel C. Edelstein , Takeshi Nogami , Daniel P. Sanders
IPC分类号： H01L23/482 , H01L21/768
CPC分类号： H01L23/5226 , H01L21/76831 , H01L21/76846 , H01L21/76849 , H01L21/76867 , H01L21/76873 , H01L23/53209 , H01L23/53223 , H01L23/53238 , H01L23/53266 , H01L2924/0002 , H01L2924/00
摘要： An interconnect structure and method for fabricating the interconnect structure having enhanced performance and reliability, by minimizing oxygen intrusion into a seed layer and an electroplated copper layer of the interconnect structure, are disclosed. At least one opening in a dielectric layer is formed. A sacrificial oxidation layer disposed on the dielectric layer is formed. The sacrificial oxidation layer minimizes oxygen intrusion into the seed layer and the electroplated copper layer of the interconnect structure. A barrier metal layer disposed on the sacrificial oxidation layer is formed. A seed layer disposed on the barrier metal layer is formed. An electroplated copper layer disposed on the seed layer is formed. A planarized surface is formed, wherein a portion of the sacrificial oxidation layer, the barrier metal layer, the seed layer, and the electroplated copper layer are removed. In addition, a capping layer disposed on the planarized surface is formed.
摘要翻译：公开了一种用于制造具有增强的性能和可靠性的互连结构的互连结构和方法，通过最小化氧侵入种子层和互连结构的电镀铜层。形成电介质层中的至少一个开口。形成设置在电介质层上的牺牲氧化层。牺牲氧化层使氧侵入种子层和互连结构的电镀铜层最小化。形成设置在牺牲氧化层上的阻挡金属层。形成设置在阻挡金属层上的籽晶层。形成设置在种子层上的电镀铜层。形成平坦化表面，其中除去部分牺牲氧化层，阻挡金属层，种子层和电镀铜层。此外，形成设置在平坦化表面上的覆盖层。

3. 发明授权

US09233840B2 Method for improving self-assembled polymer features 有权
标题翻译：改进自组装聚合物特征的方法
公开(公告)号：US09233840B2
公开(公告)日：2016-01-12
申请号：US12913835
申请日：2010-10-28
申请人： Joy Cheng , Hayato Namai , Daniel P. Sanders
发明人： Joy Cheng , Hayato Namai , Daniel P. Sanders
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , B81C1/00 , H01L21/033 , H01L21/027
CPC分类号： B81C1/00031 , B81C2201/0149 , H01L21/0271 , H01L21/0337 , H01L21/0338
摘要： A method for processing a structure. The structure is formed and includes a substrate, a substructure having a sidewall and disposed on the substrate, a first polymer structure disposed on the substrate, and a second polymer structure disposed on the substrate such that the first polymer structure is disposed between the sidewall and the second polymer structure. An aspect ratio of the first polymer structure, the second polymer structure, or both is reduced in a reducing step. One polymer structure (i.e., the first polymer structure or the second polymer structure) is selectively removed from the structure such that a remaining polymer structure (i.e., the second polymer structure or the first polymer structure) remains disposed on the external surface of the substrate after the one polymer structure has been selectively removed, wherein the aspect ratio of the remaining polymer structure was reduced in the reducing step.
摘要翻译：一种处理结构的方法。该结构被形成并且包括衬底，具有侧壁并设置在衬底上的子结构，设置在衬底上的第一聚合物结构和设置在衬底上的第二聚合物结构，使得第一聚合物结构设置在侧壁和第二聚合物结构。在还原步骤中，第一聚合物结构，第二聚合物结构或两者的纵横比减小。从结构中选择性地除去一种聚合物结构（即，第一聚合物结构或第二聚合物结构），使得剩余的聚合物结构（即，第二聚合物结构或第一聚合物结构）保留在基材的外表面上在选择性去除一种聚合物结构之后，在还原步骤中其余聚合物结构的纵横比降低。

4. 发明授权

US08334088B2 Functionalized carbosilane polymers and photoresist compositions containing the same 有权
标题翻译：官能化碳硅烷聚合物和含有它们的光致抗蚀剂组合物
公开(公告)号：US08334088B2
公开(公告)日：2012-12-18
申请号：US12938459
申请日：2010-11-03
申请人： Robert D. Allen , Matthew E. Colburn , Daniel P. Sanders , Ratnam Sooriyakumaran , Hoa D. Truong
发明人： Robert D. Allen , Matthew E. Colburn , Daniel P. Sanders , Ratnam Sooriyakumaran , Hoa D. Truong
IPC分类号： G03F7/038 , G03F7/039
CPC分类号： G03F7/0757 , C08G77/60 , G03F7/0046 , G03F7/0382 , G03F7/0392 , Y10S430/106 , Y10S430/108 , Y10S430/12 , Y10S430/122 , Y10S430/126
摘要： Linear or branched functionalized polycarbosilanes having an absorbance less than 3.0 μm−1 at 193 nm and a relatively high refractive index are provided. The functionalized polycarbosilanes contain at least one pendant group that is acid labile or aqueous base soluble. Also disclosed are photoresists formulations containing the functionalized polycarbosilanes that are suitable for use in lithography, e.g., immersion lithography.
摘要翻译：提供了在193nm处具有小于3.0μm-1的吸光度和相对高的折射率的线性或分支官能化的聚碳硅烷。官能化聚碳硅烷含有至少一个酸不稳定或水溶性碱可溶的侧基。还公开了含有适用于光刻（例如浸渍光刻）的官能化聚碳硅烷的光致抗蚀剂制剂。

5. 发明授权

US07989026B2 Method of use of epoxy-containing cycloaliphatic acrylic polymers as orientation control layers for block copolymer thin films 有权
标题翻译：使用含环氧基的脂环族丙烯酸聚合物作为嵌段共聚物薄膜的取向控制层的方法
公开(公告)号：US07989026B2
公开(公告)日：2011-08-02
申请号：US12013444
申请日：2008-01-12
申请人： Joy Cheng , Ho-Cheol Kim , Charles T. Rettner , Daniel P. Sanders , Ratnam Sooriyakumaran , Linda Sundberg
发明人： Joy Cheng , Ho-Cheol Kim , Charles T. Rettner , Daniel P. Sanders , Ratnam Sooriyakumaran , Linda Sundberg
IPC分类号： B05D5/00
CPC分类号： B05D5/00 , B05D7/14 , B05D7/52 , C08L53/00 , C09D125/14 , C09D153/00
摘要： Disclosed herein is a method of controlling the orientation of microphase-separated domains in a block copolymer film, comprising forming an orientation control layer comprising an epoxy-containing cycloaliphatic acrylic polymer on a surface of a substrate, irradiating and/or heating the substrate to crosslink the orientation control layer, and forming a block copolymer assembly layer comprising block copolymers which form microphase-separated domains, on a surface of the orientation control layer opposite the substrate. The orientation control layer can be selectively cross-linked to expose regions of the substrate, or the orientation control layer can be patterned without removing the layer, to provide selective patterning on the orientation control layer. In further embodiments, bilayer and trilayer imaging schemes are disclosed.
摘要翻译：本文公开了一种控制嵌段共聚物膜中微相分离的区域的取向的方法，包括在基材的表面上形成包含含环氧基的脂环族丙烯酸聚合物的取向控制层，照射和/或加热该基材以交联取向控制层，并且在与衬底相对的取向控制层的表面上形成包含形成微相分离结构域的嵌段共聚物的嵌段共聚物组合层。取向控制层可以选择性地交联以暴露衬底的区域，或者可以将取向控制层图案化而不去除该层，以在取向控制层上提供选择性图案化。在另外的实施方案中，公开了双层和三层成像方案。

6. 发明申请

US20100305300A1 Method of Ring-Opening Polymerization, and Related Compositions and Articles 有权
标题翻译：开环聚合方法及相关组合物和制品
公开(公告)号：US20100305300A1
公开(公告)日：2010-12-02
申请号：US12475700
申请日：2009-06-01
申请人： Olivier Coulembier , James L. Hedrick , Alshakim Nelson , Julia E. Rice , Daniel P. Sanders
发明人： Olivier Coulembier , James L. Hedrick , Alshakim Nelson , Julia E. Rice , Daniel P. Sanders
IPC分类号： C08G63/08 , C08G67/00
CPC分类号： C08G63/823 , C08G63/06
摘要： Methods to form a polymer by ring-opening polymerization include reacting, a mixture comprising a monomer, an accelerator, an initiator, and a catalyst comprising a 1,1,1,3,3,3-hexafluoropropan-2-ol-2-yl group to form the polymer. Also disclosed are polymers including a residual amount of the catalyst in an amount greater than 0 weight percent.
摘要翻译：通过开环聚合形成聚合物的方法包括使包含单体，促进剂，引发剂和包含1,1,1,3,3,3-六氟丙-2-醇-2- 以形成聚合物。还公开了包含大于0重量％的残留量的催化剂的聚合物。

7. 发明授权

US07824845B2 Functionalized carbosilane polymers and photoresist compositions containing the same 有权
标题翻译：官能化碳硅烷聚合物和含有它们的光致抗蚀剂组合物
公开(公告)号：US07824845B2
公开(公告)日：2010-11-02
申请号：US12057472
申请日：2008-03-28
申请人： Robert D. Allen , Matthew E. Colburn , Daniel P. Sanders , Ratnam Sooriyakumaran , Hoa D. Truong
发明人： Robert D. Allen , Matthew E. Colburn , Daniel P. Sanders , Ratnam Sooriyakumaran , Hoa D. Truong
IPC分类号： G03F7/038 , G03F7/039 , G03F7/20 , G03F7/30
CPC分类号： G03F7/0397 , G03F7/0757 , Y10S430/106 , Y10S430/108 , Y10S430/143 , Y10S430/168
摘要： Linear or branched functionalized polycarbosilanes having an absorbance less than 3.0 μm−1 at 193 nm and a relatively high refractive index are provided. The functionalized polycarbosilanes contain at least one pendant group that is acid labile or aqueous base soluble. Also disclosed are photoresists formulations containing the functionalized polycarbosilanes that are suitable for use in lithography, e.g., immersion lithography.
摘要翻译：提供了在193nm处具有小于3.0μm-1的吸光度和相对高折射率的线性或分支官能化聚碳硅烷。官能化聚碳硅烷含有至少一个酸不稳定或水溶性碱可溶的侧基。还公开了含有适用于光刻（例如浸渍光刻）的官能化聚碳硅烷的光致抗蚀剂制剂。

8. 发明申请

US20090212016A1 Aligning polymer films 有权
标题翻译：对准聚合物膜
公开(公告)号：US20090212016A1
公开(公告)日：2009-08-27
申请号：US12036091
申请日：2008-02-22
申请人： Joy Cheng , Daniel P. Sanders , Ratnam Sooriyakumaran
发明人： Joy Cheng , Daniel P. Sanders , Ratnam Sooriyakumaran
IPC分类号： B44C1/22
CPC分类号： H01L21/0337 , B81B2207/056 , B81C1/00031 , Y10T428/24322 , Y10T428/24612 , Y10T428/24802
摘要： A Method. The method includes forming a substructure, on a substrate, including a feature having a sidewall of a first material and a bottom surface of a second material. Applying a solution including two immiscible polymers and third material to the substructure. The immiscible polymers include a first and second polymer. A selective chemical affinity of the first polymer for the material is greater than a selective chemical affinity of the second polymer for the material. The first polymer is segregated from the second polymer. The first polymer selectively migrates to the at least one sidewall, resulting in the first polymer being disposed between the at least one sidewall and the second polymer. The first polymer is selectively removed. The second polymer remains, resulting in forming structures including the substructure, the third material, and the second polymer. The substructure has a pattern. The pattern is transferred to the substrate.
摘要翻译：一个方法。该方法包括在基底上形成子结构，其包括具有第一材料的侧壁和第二材料的底表面的特征。将包括两种不混溶的聚合物和第三种材料的溶液应用于底层结构。不混溶的聚合物包括第一和第二聚合物。第一聚合物对材料的选择性化学亲和力大于第二聚合物对材料的选择性化学亲和力。第一聚合物与第二聚合物分离。第一聚合物选择性地迁移到至少一个侧壁，导致第一聚合物设置在至少一个侧壁和第二聚合物之间。选择性地除去第一种聚合物。残留第二聚合物，导致形成包括亚结构，第三材料和第二聚合物的结构。子结构具有图案。将图案转移到基底。

9. 发明申请

US20090182093A1 Method of Controlling Orientation of Domains in Block Copolymer Films 失效
公开(公告)号：US20090182093A1
公开(公告)日：2009-07-16
申请号：US12013138
申请日：2008-01-11
申请人： Joy Cheng , Ho-Cheol Kim , Daniel P. Sanders , Linda Sundberg
发明人： Joy Cheng , Ho-Cheol Kim , Daniel P. Sanders , Linda Sundberg
IPC分类号： C08L53/00
CPC分类号： C08L63/00 , B05D5/02 , B81C1/00031 , B81C2201/0149 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C08F283/10 , C08L53/00 , C09D125/14 , G03F7/0002 , G03F7/038 , Y10S264/901 , Y10S428/91 , Y10T428/24942
摘要： A method of orienting microphase-separated domains is disclosed, comprising applying a composition comprising an orientation control component, and a block copolymer assembly component comprising a block copolymer having at least two microphase-separated domains in which the orientation control component is substantially immiscible with the block copolymer assembly component upon forming a film; and forming a compositionally vertically segregated film on the surface of the substrate from the composition. The orientation control component and block copolymer segregate during film forming to form the compositionally vertically-segregated film on the surface of a substrate, where the orientation control component is enriched adjacent to the surface of the compositionally segregated film adjacent to the surface of the substrate, and the block copolymer assembly is enriched at an air-surface interface.

10. 发明申请

US20090181321A1 Photoresist Compositions and Methods of Use in High Index Immersion Lithography 失效
公开(公告)号：US20090181321A1
公开(公告)日：2009-07-16
申请号：US12015436
申请日：2008-01-16
申请人： Hiroshi Ito , Daniel P. Sanders , Linda Sundberg
发明人： Hiroshi Ito , Daniel P. Sanders , Linda Sundberg
IPC分类号： G03C1/72 , G03F7/26
CPC分类号： G03F7/2041 , G03F7/0045 , G03F7/0046 , G03F7/039 , G03F7/0392 , G03F7/0395 , G03F7/0397
摘要： The present invention relates to a composition comprising a photoresist polymer and a fluoropolymer. In one embodiment, the fluoropolymer comprises a first monomer having a pendant group selected from alicyclic bis-hexafluoroisopropanol and aryl bis-hexafluoroisopropanol and preferably a second monomer selected from fluorinated styrene and fluorinated vinyl ether. The invention composition has improved receding contact angles with high refractive index hydrocarbon fluids used in immersion lithography and, thereby, provides improved performance in immersion lithography.

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