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1. 发明授权

US11094523B2 Processing method for wafer 有权
公开(公告)号：US11094523B2
公开(公告)日：2021-08-17
申请号：US16696048
申请日：2019-11-26
申请人： DISCO CORPORATION
发明人： Xin Lu , Zach Powers , Eric Eisenberg
IPC分类号： H01L21/02 , H01L21/428
摘要： A processing method for a wafer having a chamfered portion on an outer circumference thereof includes a step of irradiating a laser beam of a transmission wavelength to the wafer along an outer circumferential edge of the wafer at a position on an inner side of a predetermined distance from the outer circumferential edge of the wafer to form an annular modified region having a depth from a front face of the wafer to a finish thickness, a step of irradiating a laser beam of a transmission wavelength to the wafer on an outer circumferential portion of the wafer to radially form a plurality of modified regions having the depth from the front face of the wafer to the finish thickness on the outer circumferential portion of the wafer, and a step of grinding a back face of the wafer to thin the wafer to the finish thickness.

2. 发明授权

US09892986B2 Packaged wafer manufacturing method and device chip manufacturing method 有权
公开(公告)号：US09892986B2
公开(公告)日：2018-02-13
申请号：US15481709
申请日：2017-04-07
申请人： DISCO CORPORATION
发明人： Hideki Koshimizu , Xin Lu , Yurika Araya
IPC分类号： H01L21/76 , H01L21/00 , H01L23/29 , H01L21/67 , H01L23/31 , H01L21/78 , H01L21/782
CPC分类号： H01L23/29 , H01L21/561 , H01L21/67092 , H01L21/67121 , H01L21/67126 , H01L21/6715 , H01L21/78 , H01L21/782 , H01L23/3114 , H01L23/3178
摘要： Disclosed herein is a packaged wafer manufacturing method including the steps of forming a groove along each division line on the front side of a wafer, each groove having a depth greater than the finished thickness of the wafer, next removing a chamfered portion from the outer circumference of the wafer to thereby form a step portion having a depth greater than the depth of each groove, next setting a die of a molding apparatus on the bottom surface of the step portion of the wafer in the condition where a space is defined between the die and the wafer, and next filling a mold resin into this space. Accordingly, the device area of the wafer is covered with the mold resin and each groove of the wafer is filled with the mold resin to thereby obtain a packaged wafer.

3. 发明申请

US20170294364A1 PACKAGED WAFER MANUFACTURING METHOD AND DEVICE CHIP MANUFACTURING METHOD 有权
公开(公告)号：US20170294364A1
公开(公告)日：2017-10-12
申请号：US15481709
申请日：2017-04-07
申请人： DISCO CORPORATION
发明人： Hideki Koshimizu , Xin Lu , Yurika Araya
IPC分类号： H01L23/29 , H01L23/31 , H01L21/67
CPC分类号： H01L23/29 , H01L21/561 , H01L21/67092 , H01L21/67121 , H01L21/67126 , H01L21/6715 , H01L21/78 , H01L21/782 , H01L23/3114 , H01L23/3178
摘要： Disclosed herein is a packaged wafer manufacturing method including the steps of forming a groove along each division line on the front side of a wafer, each groove having a depth greater than the finished thickness of the wafer, next removing a chamfered portion from the outer circumference of the wafer to thereby form a step portion having a depth greater than the depth of each groove, next setting a die of a molding apparatus on the bottom surface of the step portion of the wafer in the condition where a space is defined between the die and the wafer, and next filling a mold resin into this space. Accordingly, the device area of the wafer is covered with the mold resin and each groove of the wafer is filled with the mold resin to thereby obtain a packaged wafer.

4. 发明授权

US10679910B2 Packaged wafer processing method 有权
公开(公告)号：US10679910B2
公开(公告)日：2020-06-09
申请号：US15417642
申请日：2017-01-27
申请人： DISCO CORPORATION
发明人： Makoto Tanaka , Xin Lu
IPC分类号： H01L21/66 , H01L21/67 , B23K26/364 , B23K26/03 , B23K26/08 , H01L21/687 , H01L21/78 , B23K101/40
摘要： A packaged wafer processing method includes a processing step of processing each division line formed on a packaged wafer by using a laser beam applying unit and a feeding mechanism, and indexing the wafer by a preset index amount “a” corresponding to the pitch of the division lines by using an indexing mechanism, thereby forming a laser processed groove along each division line. A correcting step images the next division line to be processed in an exposed peripheral portion of the wafer and the laser processed groove just formed along the present division line, at any arbitrary time during the processing step. The distance “b” between the next division line and the laser processed groove just formed is determined, and then a correction index amount “c” is calculated by using the deviation corresponding to the difference (a−b) between the preset index amount “a” and the distance “b”.

5. 发明授权

US10269639B2 Method of manufacturing packaged wafer 有权
公开(公告)号：US10269639B2
公开(公告)日：2019-04-23
申请号：US15472995
申请日：2017-03-29
申请人： DISCO CORPORATION
发明人： Hideki Koshimizu , Xin Lu , Yurika Araya
IPC分类号： B23K26/00 , H01L21/78 , H01L21/56 , H01L21/67 , H01L23/31
摘要： Disclosed herein is a method of manufacturing a packaged wafer including a step of forming grooves in a face side of a wafer along projected dicing lines to a depth larger than a finished thickness of the wafer, a step of forming a ring-shaped groove in and along a boundary between a device area and an outer peripheral excess area of the wafer to a depth larger than the depth of the grooves, and a step of placing a recess mold of a molding apparatus in engagement with the wafer so that a side wall of the recess mold is placed on a bottom of the ring-shaped groove and filling a space between the recess mold and the wafer with a molding resin.

6. 发明授权

US09852949B2 Wafer processing method 有权
公开(公告)号：US09852949B2
公开(公告)日：2017-12-26
申请号：US15254681
申请日：2016-09-01
申请人： DISCO CORPORATION
发明人： Tetsukazu Sugiya , Xin Lu
IPC分类号： H01L21/78 , H01L21/268 , H01L21/304 , H01L21/3105 , H01L21/67 , B28D5/00 , B28D5/02 , H01L21/56 , H01L21/683 , H01L23/31
CPC分类号： H01L21/78 , B23K26/364 , B23K2103/56 , B28D5/00 , B28D5/02 , H01L21/268 , H01L21/304 , H01L21/3043 , H01L21/31058 , H01L21/561 , H01L21/67092 , H01L21/6836 , H01L23/3114 , H01L2221/68327 , H01L2221/6834
摘要： A wafer is divided into device chips each of which is surrounded by a mold resin. The wafer has a plurality of devices arranged like a matrix with a spacing having a predetermined width, the front side of each device being covered with the mold resin, the spacing being filled with the mold resin to form a street between any adjacent ones of the devices. The wafer processing method includes a division start point forming step of forming a division start point along each street at the lateral center of the mold resin filling the spacing and a dividing step of applying an external force to the wafer after performing the division start point forming step, thereby laterally dividing each street into two parts at the division start point to obtain the device chips divided from each other, each device chip being surrounded by the mold resin.

7. 发明申请

US20170221780A1 PACKAGED WAFER PROCESSING METHOD 审中-公开
公开(公告)号：US20170221780A1
公开(公告)日：2017-08-03
申请号：US15417642
申请日：2017-01-27
申请人： DISCO CORPORATION
发明人： Makoto Tanaka , Xin Lu
IPC分类号： H01L21/66 , H01L21/78 , B23K26/08 , H01L21/687 , B23K26/03 , B23K26/364 , H01L21/268 , H01L23/544
摘要： A packaged wafer processing method includes a processing step of processing each division line formed on a packaged wafer by using a laser beam applying unit and a feeding mechanism, and indexing the wafer by a preset index amount “a” corresponding to the pitch of the division lines by using an indexing mechanism, thereby forming a laser processed groove along each division line. A correcting step images the next division line to be processed in an exposed peripheral portion of the wafer and the laser processed groove just formed along the present division line, at any arbitrary time during the processing step. The distance “b” between the next division line and the laser processed groove just formed is determined, and then a correction index amount “c” is calculated by using the deviation corresponding to the difference (a−b) between the preset index amount “a” and the distance “b”.

8. 发明申请

US20170069537A1 WAFER PROCESSING METHOD 有权
标题翻译： WAFER加工方法
公开(公告)号：US20170069537A1
公开(公告)日：2017-03-09
申请号：US15254681
申请日：2016-09-01
申请人： DISCO CORPORATION
发明人： Tetsukazu Sugiya , Xin Lu
IPC分类号： H01L21/78 , H01L21/268 , H01L21/56 , H01L23/544 , H01L23/31 , H01L21/02
CPC分类号： H01L21/78 , B23K26/364 , B23K2103/56 , B28D5/00 , B28D5/02 , H01L21/268 , H01L21/304 , H01L21/3043 , H01L21/31058 , H01L21/561 , H01L21/67092 , H01L21/6836 , H01L23/3114 , H01L2221/68327 , H01L2221/6834
摘要： A wafer is divided into device chips each of which is surrounded by a mold resin. The wafer has a plurality of devices arranged like a matrix with a spacing having a predetermined width, the front side of each device being covered with the mold resin, the spacing being filled with the mold resin to form a street between any adjacent ones of the devices. The wafer processing method includes a division start point forming step of forming a division start point along each street at the lateral center of the mold resin filling the spacing and a dividing step of applying an external force to the wafer after performing the division start point forming step, thereby laterally dividing each street into two parts at the division start point to obtain the device chips divided from each other, each device chip being surrounded by the mold resin.
摘要翻译：将晶片分成各自被模制树脂包围的装置芯片。晶片具有多个排列成具有预定宽度的间隔矩阵的装置，每个装置的前侧均被模制树脂覆盖，该间隔用模制树脂填充，以形成任何相邻的设备。晶片处理方法包括：分割开始点形成步骤，在填充间隔的模制树脂的横向中心沿着每个街道形成分割开始点;以及分割步骤，在进行分割开始点形成之后，向晶片施加外力从而在划分开始点将每个街道横向划分为两部分，以获得彼此分开的装置芯片，每个装置芯片被模制树脂包围。

9. 发明申请

US20160035635A1 WAFER PROCESSING METHOD 有权
标题翻译： WAFER加工方法
公开(公告)号：US20160035635A1
公开(公告)日：2016-02-04
申请号：US14811470
申请日：2015-07-28
申请人： DISCO CORPORATION
发明人： Makoto Tanaka , Xin Lu , Sax Liao
IPC分类号： H01L21/66 , H01L21/304 , H01L21/78
CPC分类号： H01L22/20 , H01L21/304 , H01L21/78 , H01L22/12
摘要： A wafer processing method includes a first correction step of measuring a distance “a” between a first cut groove previously formed by a first cutting unit and a division line for the next cut groove, and correcting an actual index amount by using a deviation “b” of the first cutting unit equivalent to the difference between the distance “a” and a proper index amount of the first cutting unit, and a second correction step of forming a measurement groove by using a second cutting unit along the division line for the next cut groove, measuring a distance “c” between the first cut groove and the measurement groove, and correcting an actual index amount of the second cutting unit by using a deviation “d” equivalent to the difference between the distance “c” and a proper index amount of the second cutting unit during the cutting step.
摘要翻译：晶片处理方法包括：第一校正步骤，测量由第一切割单元预先形成的第一切割槽与下一切割槽的分割线之间的距离“a”，并且通过使用偏差“b”来校正实际指标量第一切割单元等于距离“a”与第一切割单元的适当指标量之差的第二切割单元，以及通过沿着分割线使用第二切割单元形成测量凹槽的第二校正步骤，用于下一个切割槽，测量第一切割槽和测量槽之间的距离“c”，并且通过使用与距离“c”和适当的距离之间的差相当的偏差“d”来校正第二切割单元的实际指标量在切割步骤期间第二切割单元的索引量。

10. 发明授权

US10262899B2 Method of processing wafer 有权
公开(公告)号：US10262899B2
公开(公告)日：2019-04-16
申请号：US15385387
申请日：2016-12-20
申请人： DISCO CORPORATION
发明人： Xin Lu , Atsushi Kubo
IPC分类号： H01L21/78 , H01L21/02 , H01L21/304 , H01L21/56 , H01L23/544 , H01L21/683
摘要： A wafer has a plurality of projected dicing lines on a face side thereof, a plurality of devices formed in respective areas demarcated on the face side of the wafer by the projected dicing lines, a plurality of grooves defined in the projected dicing lines, and a molding resin laid on the devices and embedded in the grooves. An outer circumferential portion of the molding resin is removed, exposing the molding resin embedded in the grooves. The molding resin embedded in the grooves exposed on an outer circumferential portion of the wafer is detected, and a laser beam is focused at a transversely central point on the molding resin embedded in the grooves. The laser beam is applied to the molding resin along the grooves, thereby forming dividing grooves in the wafer to allow the wafer to be divided into individual devices.

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