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1. 发明授权

US06909119B2 Low temperature formation of backside ohmic contacts for vertical devices 有权
标题翻译：低温形成用于垂直器件的背面欧姆接触
公开(公告)号：US06909119B2
公开(公告)日：2005-06-21
申请号：US10799140
申请日：2004-03-12
申请人： David B. Slater, Jr. , Alexander Suvorov
发明人： David B. Slater, Jr. , Alexander Suvorov
IPC分类号： H01L21/04 , H01L31/0224 , H01L33/00 , H01L33/34 , H01L33/36 , H01L31/0312
CPC分类号： H01L31/022408 , H01L21/046 , H01L21/0485 , H01L33/0095 , H01L33/34 , H01L33/36
摘要： A semiconductor device is disclosed that includes a semiconductor substrate having a first surface and a second surface and a first conductivity type and at least one epitaxial layer on the first surface of the semiconductor substrate. The epitaxial layer is formed of a material with a dissociation temperature below that of the semiconductor substrate. A zone of increased carrier concentration is in the semiconductor substrate and extends from the second surface of the semiconductor material toward the first surface. A layer of metal is deposited on the second surface of the semiconductor substrate and forms an ohmic contact at the interface of the metal and the zone of increased carrier concentration.
摘要翻译：公开了一种半导体器件，其包括在半导体衬底的第一表面上具有第一表面和第二表面以及第一导电类型和至少一个外延层的半导体衬底。外延层由解离温度低于半导体衬底的材料形成。增加载流子浓度的区域在半导体衬底中并从半导体材料的第二表面朝向第一表面延伸。金属层沉积在半导体衬底的第二表面上，并在金属界面和载流子浓度增加的区域形成欧姆接触。

2. 发明授权

US07943954B2 LED fabrication via ion implant isolation 有权
标题翻译：通过离子注入隔离制造LED
公开(公告)号：US07943954B2
公开(公告)日：2011-05-17
申请号：US12507288
申请日：2009-07-22
申请人： Yifeng Wu , Gerald H. Negley , David B. Slater, Jr. , Valeri F. Tsvetkov , Alexander Suvorov
发明人： Yifeng Wu , Gerald H. Negley , David B. Slater, Jr. , Valeri F. Tsvetkov , Alexander Suvorov
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/305
摘要： A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium nitride region on the n-type epitaxial layer and adjacent the p-type epitaxial layer for electrically isolating portions of the p-n junction. A metal contact layer is formed on the p-type epitaxial layer. In method embodiments disclosed, the resistive gallium nitride border is formed by forming an implant mask on the p-type epitaxial region and implanting ions into portions of the p-type epitaxial region to render portions of the p-type epitaxial region semi-insulating. A photoresist mask or a sufficiently thick metal layer may be used as the implant mask.
摘要翻译：半导体发光二极管包括半导体衬底，衬底上的n型III族氮化物的外延层，n型外延层上的III族氮化物的p型外延层，并与n型外延层形成pn结，型层和n型外延层上的电阻性氮化镓区，并且邻近p型外延层，用于电隔离pn结的部分。在p型外延层上形成金属接触层。在公开的方法实施例中，通过在p型外延区上形成注入掩模并将离子注入到p型外延区的一部分中以形成半绝缘的p型外延区的部分来形成电阻性氮化镓边界。可以使用光致抗蚀剂掩模或足够厚的金属层作为植入物掩模。

3. 发明授权

US07592634B2 LED fabrication via ion implant isolation 有权
标题翻译：通过离子注入隔离制造LED
公开(公告)号：US07592634B2
公开(公告)日：2009-09-22
申请号：US11154619
申请日：2005-06-16
申请人： Yifeng Wu , Gerald H. Negley , David B. Slater, Jr. , Valeri F. Tsvetkov , Alexander Suvorov
发明人： Yifeng Wu , Gerald H. Negley , David B. Slater, Jr. , Valeri F. Tsvetkov , Alexander Suvorov
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L33/305
摘要： A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium nitride region on the n-type epitaxial layer and adjacent the p-type epitaxial layer for electrically isolating portions of the p-n junction. A metal contact layer is formed on the p-type epitaxial layer. In method embodiments disclosed, the resistive gallium nitride border is formed by forming an implant mask on the p-type epitaxial region and implanting ions into portions of the p-type epitaxial region to render portions of the p-type epitaxial region semi-insulating. A photoresist mask or a sufficiently thick metal layer may be used as the implant mask.
摘要翻译：半导体发光二极管包括半导体衬底，衬底上的n型III族氮化物的外延层，n型外延层上的III族氮化物的p型外延层，并与n型外延层形成pn结，型层和n型外延层上的电阻性氮化镓区，并且邻近p型外延层，用于电隔离pn结的部分。在p型外延层上形成金属接触层。在公开的方法实施例中，通过在p型外延区上形成注入掩模并将离子注入到p型外延区的一部分中以形成半绝缘的p型外延区的部分来形成电阻性氮化镓边界。可以使用光致抗蚀剂掩模或足够厚的金属层作为植入物掩模。

4. 发明授权

US06995398B2 Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices 有权
标题翻译：处理碳化硅衬底以改善外延沉积以及所得结构和器件的方法
公开(公告)号：US06995398B2
公开(公告)日：2006-02-07
申请号：US10709780
申请日：2004-05-27
申请人： Davis Andrew McClure , Alexander Suvorov , John A. Edmond , David B. Slater, Jr.
发明人： Davis Andrew McClure , Alexander Suvorov , John A. Edmond , David B. Slater, Jr.
IPC分类号： H01L31/0312
CPC分类号： H01L33/007 , H01L21/02378 , H01L21/02658 , H01L21/046 , H01L21/2003 , H01L29/6606 , H01L33/0062 , Y10S438/931
摘要： A method is disclosed for treating a silicon carbide substrate for improved epitaxial deposition thereon and for use as a precursor in the manufacture of devices such as light emitting diodes. The method includes the steps of implanting dopant atoms of a first conductivity type into the first surface of a conductive silicon carbide wafer having the same conductivity type as the implanting ions at one or more predetermined dopant concentrations and implant energies to form a dopant profile, annealing the implanted wafer, and growing an epitaxial layer on the implanted first surface of the wafer.
摘要翻译：公开了一种用于处理碳化硅衬底以改进其上的外延沉积并用作制造诸如发光二极管的器件中的前体的方法。该方法包括以下步骤：将第一导电类型的掺杂剂原子注入具有与一种或多种预定掺杂剂浓度的注入离子相同的导电类型的导电碳化硅晶片的第一表面，并且注入能量以形成掺杂剂分布，退火所述植入的晶片，以及在所述晶片的植入的第一表面上生长外延层。

5. 发明授权

US06884644B1 Low temperature formation of backside ohmic contacts for vertical devices 有权
标题翻译：低温形成用于垂直器件的背面欧姆接触
公开(公告)号：US06884644B1
公开(公告)日：2005-04-26
申请号：US09787189
申请日：1999-09-16
申请人： David B. Slater, Jr. , Alexander Suvorov
发明人： David B. Slater, Jr. , Alexander Suvorov
IPC分类号： H01L21/04 , H01L31/0224 , H01L33/00 , H01L33/34 , H01L33/36 , H01L21/00
CPC分类号： H01L31/022408 , H01L21/0485 , H01L33/0095 , H01L33/34 , H01L33/36
摘要： The invention comprises a method for forming a metal-semiconductor ohmic contact (18) for use in a semiconductor device (10) having a plurality of epitaxial layers (14a-c) wherein the ohmic contact (18) is preferably formed after deposition of the epitaxial layers (14a-c). The invention also comprises a semiconductor device comprising a plurality of epitaxial layers and an ohmic contact.
摘要翻译：本发明包括一种形成用于具有多个外延层（14ac）的半导体器件（10）的金属 - 半导体欧姆接触（18）的方法，其中欧姆接触（18）优选在沉积外延层层（14 ac）。本发明还包括包括多个外延层和欧姆接触的半导体器件。

6. 发明授权

US07338822B2 LED fabrication via ion implant isolation 有权
标题翻译：通过离子注入隔离制造LED
公开(公告)号：US07338822B2
公开(公告)日：2008-03-04
申请号：US10840463
申请日：2004-05-06
申请人： Yifeng Wu , Gerald H. Negley , David B. Slater, Jr. , Valeri F. Tsvetkov , Alexander Suvorov
发明人： Yifeng Wu , Gerald H. Negley , David B. Slater, Jr. , Valeri F. Tsvetkov , Alexander Suvorov
IPC分类号： H01L21/00
CPC分类号： H01L33/145 , H01L24/73 , H01L33/0095 , H01L33/025 , H01L33/32 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , Y02P80/30 , H01L2924/00014 , H01L2924/00012
摘要： A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium nitride region on the n-type epitaxial layer and adjacent the p-type epitaxial layer for electrically isolating portions of the p-n junction. A metal contact layer is formed on the p-type epitaxial layer. In method embodiments disclosed, the resistive gallium nitride border is formed by forming an implant mask on the p-type epitaxial region and implanting ions into portions of the p-type epitaxial region to render portions of the p-type epitaxial region semi-insulating. A photoresist mask or a sufficiently thick metal layer may be used as the implant mask.
摘要翻译：半导体发光二极管包括半导体衬底，衬底上的n型III族氮化物的外延层，n型外延层上的III族氮化物的p型外延层，并与n型外延层形成pn结，型层和n型外延层上的电阻性氮化镓区，并且邻近p型外延层，用于电隔离pn结的部分。在p型外延层上形成金属接触层。在公开的方法实施例中，通过在p型外延区上形成注入掩模并将离子注入到p型外延区的一部分中以形成半绝缘的p型外延区的部分来形成电阻性氮化镓边界。可以使用光致抗蚀剂掩模或足够厚的金属层作为植入物掩模。

7. 发明授权

US06803243B2 Low temperature formation of backside ohmic contacts for vertical devices 有权
标题翻译：低温形成用于垂直器件的背面欧姆接触
公开(公告)号：US06803243B2
公开(公告)日：2004-10-12
申请号：US10003331
申请日：2001-10-31
申请人： David B. Slater, Jr. , Alexander Suvorov
发明人： David B. Slater, Jr. , Alexander Suvorov
IPC分类号： H01L2100
CPC分类号： H01L21/046 , H01L21/0485 , H01L31/022408 , H01L33/0095 , H01L33/34 , H01L33/36
摘要： A method for forming an ohmic contact to silicon carbide for a semiconductor device comprises implanting impurity atoms into a surface of a silicon carbide substrate thereby forming a layer on the silicon carbide substrate having an increased concentration of impurity atoms, annealing the implanted silicon carbide substrate, and depositing a layer of metal on the implanted surface of the silicon carbide. The metal forms an ohmic contact “as deposited” on the silicon carbide substrate without the need for a post-deposition anneal step.
摘要翻译：用于形成用于半导体器件的碳化硅的欧姆接触的方法包括将杂质原子注入到碳化硅衬底的表面中，从而在碳化硅衬底上形成具有增加的杂质原子浓度的层，退火注入的碳化硅衬底，以及在所述碳化硅的植入表面上沉积金属层。金属在碳化硅衬底上形成“沉积”的欧姆接触，而不需要后沉积退火步骤。

8. 发明授权

US07791061B2 External extraction light emitting diode based upon crystallographic faceted surfaces 有权
标题翻译：基于晶面刻面的外部提取发光二极管
公开(公告)号：US07791061B2
公开(公告)日：2010-09-07
申请号：US11343180
申请日：2006-01-30
申请人： John A. Edmond , David B. Slater, Jr. , Hua Shuang Kong , Matthew Donofrio
发明人： John A. Edmond , David B. Slater, Jr. , Hua Shuang Kong , Matthew Donofrio
IPC分类号： H01L29/06 , H01L21/00
CPC分类号： H01L33/20 , H01L33/007 , H01L33/0079 , H01L33/105 , H01L33/145 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/44
摘要： A light emitting diode is disclosed that includes a support structure and a Group III nitride light emitting active structure mesa on the support structure. The mesa has its sidewalls along an indexed crystal plane of the Group III nitride. A method of forming the diode is also disclosed that includes the steps of removing a substrate from a Group III nitride light emitting structure that includes a sub-mount structure on the Group III nitride light emitting structure opposite the substrate, and thereafter etching the surface of the Group III nitride from which the substrate has been removed with an anisotropic etch to develop crystal facets on the surface in which the facets are along an index plane of the Group III nitride. The method can also include etching the light emitting structure with an anisotropic etch to form a mesa with edges along an index plane of the Group III nitride.
摘要翻译：公开了一种发光二极管，其包括在支撑结构上的支撑结构和III族氮化物发光活性结构台面。台面具有沿着III族氮化物的折射晶面的侧壁。还公开了一种形成二极管的方法，其包括以下步骤：从III族氮化物发光结构去除衬底，该III族氮化物发光结构包括在与衬底相对的III族氮化物发光结构上的子安装结构，然后蚀刻已经用各向异性蚀刻去除衬底的III族氮化物，以在其中小面沿着III族氮化物的折射平面的表面上开发出晶面。该方法还可以包括用各向异性蚀刻蚀刻发光结构，以形成沿着III族氮化物的折射平面的边缘的台面。

9. 发明授权

US07420222B2 Light emitting diodes including transparent oxide layers 有权
标题翻译：包括透明氧化物层的发光二极管
公开(公告)号：US07420222B2
公开(公告)日：2008-09-02
申请号：US11842350
申请日：2007-08-21
申请人： David B. Slater, Jr. , Robert C. Glass , Charles M. Swoboda , Bernd Keller , James Ibbetson , Brian Thibeault , Eric J. Tarsa
发明人： David B. Slater, Jr. , Robert C. Glass , Charles M. Swoboda , Bernd Keller , James Ibbetson , Brian Thibeault , Eric J. Tarsa
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/10 , H01L33/405 , H01L33/60 , H01L33/62 , H01L2224/32014 , H01L2224/48091 , H01L2224/73265 , H01L2924/01079 , H01L2924/01322 , H01L2924/10253 , H01L2924/12032 , H01L2924/12041 , H01L2924/00014 , H01L2924/00
摘要： Light emitting diodes include a substrate having first and second opposing faces and that is transparent to optical radiation in a predetermined wavelength range and that is patterned to define, in cross-section, a plurality of pedestals that extend into the substrate from the first face towards the second face. A diode region on the second face is configured to emit light in the predetermined wavelength range, into the substrate upon application of voltage across the diode region. A mounting support on the diode region, opposite the substrate is configured to support the diode region, such that the light that is emitted from the diode region into the substrate, is emitted from the first face upon application of voltage across the diode region. A reflector is provided between the mounting support and the diode region, that is configured to reflect light that is emitted from the diode region back into the diode region, through the substrate that is transparent to optical radiation in the predetermined wavelength range and from the plurality of pedestals, upon application of voltage across the diode region. A layer of Indium Tin Oxide (ITO) is provided between the reflector and the diode region.
摘要翻译：发光二极管包括具有第一和第二相对面并且对于预定波长范围内的光辐射透明的衬底，其被图案化以在横截面中限定多个基座，其从第一面朝向第二张脸。第二面上的二极管区域被配置为在施加二极管区域上的电压时将预定波长范围内的光发射到衬底中。配置在与衬底相对的二极管区域上的安装支撑件被配置为支撑二极管区域，使得从二极管区域发射到衬底中的光在施加二极管区域上的电压时从第一面发射。在安装支撑件和二极管区域之间设置反射器，其被配置为将从二极管区域发射的光反射回二极管区域，穿过对于预定波长范围内的光辐射透明的基板和从多个在二极管区域施加电压时，在反射器和二极管区域之间设置一层氧化铟锡（ITO）。

10. 发明授权

US07037742B2 Methods of fabricating light emitting devices using mesa regions and passivation layers 有权
标题翻译：使用台面区域和钝化层制造发光器件的方法
公开(公告)号：US07037742B2
公开(公告)日：2006-05-02
申请号：US10825647
申请日：2004-04-15
申请人： David B. Slater, Jr. , Bradley E. Williams , Peter S. Andrews
发明人： David B. Slater, Jr. , Bradley E. Williams , Peter S. Andrews
IPC分类号： H01L21/00
CPC分类号： H01L33/20 , H01L24/32 , H01L33/405 , H01L33/62 , H01L2924/01322 , H01L2924/12032 , H01L2924/12041 , H01L2924/181 , H01L2924/00
摘要： Light emitting diodes include a substrate, an epitaxial region on the substrate that includes therein a diode region and a multilayer conductive stack on the epitaxial region opposite the substrate. A passivation layer extends at least partially on the multilayer conductive stack opposite the epitaxial region, to define a bonding region on the multilayer conductive stack opposite the epitaxial region. The passivation layer also extends across the multilayer conductive stack, across the epitaxial region and onto the substrate. The multilayer conductive stack can include an ohmic layer on the epitaxial region opposite the substrate, a reflector layer on the ohmic layer opposite the epitaxial region and a tin barrier layer on the reflector layer opposite the ohmic layer. An adhesion layer also may be provided on the tin barrier layer opposite the reflector layer. A bonding layer also may be provided on the adhesion layer opposite the tin barrier layer. A submount and a bond between the bonding layer and the submount also may be provided.
摘要翻译：发光二极管包括基板，在其上包括二极管区域的基板上的外延区域和与基板相对的外延区域上的多层导电叠层。钝化层至少部分地延伸在与外延区域相对的多层导电堆叠上，以限定与外延区域相对的多层导电堆叠上的结合区域。钝化层也跨过多层导电叠层延伸穿过外延区域并延伸到衬底上。多层导电叠层可以包括在与衬底相对的外延区域上的欧姆层，在与外延区域相对的欧姆层上的反射器层和与欧姆层相对的反射器层上的锡阻挡层。也可以在与反射层相对的锡阻挡层上设置粘合层。也可以在与锡阻挡层相对的粘附层上设置接合层。还可以提供接合层和底座之间的基座和接合。

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