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1. 发明授权

US08111921B2 Method and apparatus for performing model-based OPC for pattern decomposed features 有权
标题翻译：用于模式分解特征执行基于模型的OPC的方法和装置
公开(公告)号：US08111921B2
公开(公告)日：2012-02-07
申请号：US11898646
申请日：2007-09-13
申请人： Duan-Fu Stephen Hsu , Jung Chul Park , Douglas Van Den Broeke , Jang Fung Chen
发明人： Duan-Fu Stephen Hsu , Jung Chul Park , Douglas Van Den Broeke , Jang Fung Chen
IPC分类号： G06K9/00 , G06F17/50 , H04N7/16
CPC分类号： G06T7/0004 , G03F1/36 , G03F1/70 , G03F7/70466 , G03F7/70475
摘要： A method for decomposing a target circuit pattern containing features to be imaged into multiple patterns. The process includes the steps of separating the features to be printed into a first pattern and a second pattern; performing a first optical proximity correction process on the first pattern and the second pattern; determining an imaging performance of the first pattern and the second pattern; determining a first error between the first pattern and the imaging performance of the first pattern, and a second error between the second pattern and the imaging performance of said second pattern; utilizing the first error to adjust the first pattern to generate a modified first pattern; utilizing the second error to adjust the second pattern to generate a modified second pattern; and applying a second optical proximity correction process to the modified first pattern and the modified second pattern.
摘要翻译：一种用于将包含要成像的特征的目标电路图案分解为多个图案的方法。该方法包括将待印刷的特征分离成第一图案和第二图案的步骤; 对所述第一图案和所述第二图案执行第一光学邻近校正处理; 确定所述第一图案和所述第二图案的成像性能; 确定所述第一图案和所述第一图案的成像性能之间的第一误差，以及所述第二图案和所述第二图案的成像性能之间的第二误差; 利用第一误差来调整第一图案以产生修改的第一图案; 利用第二误差来调整第二图案以产生修改的第二图案; 以及对修改的第一图案和修改的第二图案应用第二光学邻近校正处理。

2. 发明申请

US20120122023A1 Method and Apparatus for Performing Model-Based OPC for Pattern Decomposed Features 失效
标题翻译：用于对模式分解特征执行基于模型的OPC的方法和装置
公开(公告)号：US20120122023A1
公开(公告)日：2012-05-17
申请号：US13358497
申请日：2012-01-25
申请人： Duan-Fu Stephen Hsu , Jung Chul Park , Douglas Van Den Broeke , Jang Fung Chen
发明人： Duan-Fu Stephen Hsu , Jung Chul Park , Douglas Van Den Broeke , Jang Fung Chen
IPC分类号： G03F1/36 , G06F17/50
CPC分类号： G06T7/0004 , G03F1/36 , G03F1/70 , G03F7/70466 , G03F7/70475
摘要： A method for decomposing a target circuit pattern containing features to be imaged into multiple patterns. The process includes the steps of separating the features to be printed into a first pattern and a second pattern; performing a first optical proximity correction process on the first pattern and the second pattern; determining an imaging performance of the first pattern and the second pattern; determining a first error between the first pattern and the imaging performance of the first pattern, and a second error between the second pattern and the imaging performance of said second pattern; utilizing the first error to adjust the first pattern to generate a modified first pattern; utilizing the second error to adjust the second pattern to generate a modified second pattern; and applying a second optical proximity correction process to the modified first pattern and the modified second pattern.
摘要翻译：一种用于将包含要成像的特征的目标电路图案分解为多个图案的方法。该方法包括将待印刷的特征分离成第一图案和第二图案的步骤; 对所述第一图案和所述第二图案执行第一光学邻近校正处理; 确定所述第一图案和所述第二图案的成像性能; 确定所述第一图案和所述第一图案的成像性能之间的第一误差，以及所述第二图案和所述第二图案的成像性能之间的第二误差; 利用第一误差来调整第一图案以产生修改的第一图案; 利用第二误差来调整第二图案以产生修改的第二图案; 以及对修改的第一图案和修改的第二图案应用第二光学邻近校正处理。

3. 发明申请

US20130182940A1 Method and Apparatus for Performing Model-Based OPC for Pattern Decomposed Features 失效
标题翻译：用于对模式分解特征执行基于模型的OPC的方法和装置
公开(公告)号：US20130182940A1
公开(公告)日：2013-07-18
申请号：US13786249
申请日：2013-03-05
申请人： Duan-Fu Stephen Hsu , Jung Chul Park , Douglas Van Den Broeke , Jang Fung Chen
发明人： Duan-Fu Stephen Hsu , Jung Chul Park , Douglas Van Den Broeke , Jang Fung Chen
IPC分类号： G06T7/00
CPC分类号： G06T7/0004 , G03F1/36 , G03F1/70 , G03F7/70466 , G03F7/70475
摘要： A method for decomposing a target circuit pattern containing features to be imaged into multiple patterns. The process includes the steps of separating the features to be printed into a first pattern and a second pattern; performing a first optical proximity correction process on the first pattern and the second pattern; determining an imaging performance of the first pattern and the second pattern; determining a first error between the first pattern and the imaging performance of the first pattern, and a second error between the second pattern and the imaging performance of said second pattern; utilizing the first error to adjust the first pattern to generate a modified first pattern; utilizing the second error to adjust the second pattern to generate a modified second pattern; and applying a second optical proximity correction process to the modified first pattern and the modified second pattern.
摘要翻译：一种用于将包含要成像的特征的目标电路图案分解为多个图案的方法。该方法包括将待印刷的特征分离成第一图案和第二图案的步骤; 对所述第一图案和所述第二图案执行第一光学邻近校正处理; 确定所述第一图案和所述第二图案的成像性能; 确定所述第一图案和所述第一图案的成像性能之间的第一误差，以及所述第二图案和所述第二图案的成像性能之间的第二误差; 利用第一误差来调整第一图案以产生修改的第一图案; 利用第二误差来调整第二图案以产生修改的第二图案; 以及对修改的第一图案和修改的第二图案应用第二光学邻近校正处理。

4. 发明授权

US08391605B2 Method and apparatus for performing model-based OPC for pattern decomposed features 失效
标题翻译：用于模式分解特征执行基于模型的OPC的方法和装置
公开(公告)号：US08391605B2
公开(公告)日：2013-03-05
申请号：US13358497
申请日：2012-01-25
申请人： Duan-Fu Stephen Hsu , Jung Chul Park , Douglas Van Den Broeke , Jang Fung Chen
发明人： Duan-Fu Stephen Hsu , Jung Chul Park , Douglas Van Den Broeke , Jang Fung Chen
IPC分类号： G06K9/00 , G06F17/50
CPC分类号： G06T7/0004 , G03F1/36 , G03F1/70 , G03F7/70466 , G03F7/70475
摘要： A method for decomposing a target circuit pattern containing features to be imaged into multiple patterns. The process includes the steps of separating the features to be printed into a first pattern and a second pattern; performing a first optical proximity correction process on the first pattern and the second pattern; determining an imaging performance of the first pattern and the second pattern; determining a first error between the first pattern and the imaging performance of the first pattern, and a second error between the second pattern and the imaging performance of said second pattern; utilizing the first error to adjust the first pattern to generate a modified first pattern; utilizing the second error to adjust the second pattern to generate a modified second pattern; and applying a second optical proximity correction process to the modified first pattern and the modified second pattern.
摘要翻译：一种用于将包含要成像的特征的目标电路图案分解为多个图案的方法。该方法包括将待印刷的特征分离成第一图案和第二图案的步骤; 对所述第一图案和所述第二图案执行第一光学邻近校正处理; 确定所述第一图案和所述第二图案的成像性能; 确定所述第一图案和所述第一图案的成像性能之间的第一误差，以及所述第二图案和所述第二图案的成像性能之间的第二误差; 利用第一误差来调整第一图案以产生修改的第一图案; 利用第二误差来调整第二图案以产生修改的第二图案; 以及对修改的第一图案和修改的第二图案应用第二光学邻近校正处理。

5. 发明授权

US07892703B2 CPL mask and a method and program product for generating the same 有权
标题翻译： CPL掩码和用于生成CPL掩码的方法和程序产品
公开(公告)号：US07892703B2
公开(公告)日：2011-02-22
申请号：US11501916
申请日：2006-08-10
申请人： Jang Fung Chen , Duan-Fu Stephen Hsu , Douglas Van Den Broeke , Jung Chul Park , Thomas Laidig
发明人： Jang Fung Chen , Duan-Fu Stephen Hsu , Douglas Van Den Broeke , Jung Chul Park , Thomas Laidig
IPC分类号： G03F1/00 , G03F7/00
CPC分类号： G03F1/34 , G03F1/32
摘要： A method of generating a mask for printing a pattern including a plurality of features. The method includes the steps of obtaining data representing the plurality of features; and forming at least one of the plurality of features by etching a substrate to form a mesa and depositing a chrome layer over the entire upper surface of the mesa, where said mesa has a predetermined height.
摘要翻译：一种生成用于打印包括多个特征的图案的掩模的方法。该方法包括获取表示多个特征的数据的步骤; 以及通过蚀刻基底以形成台面并在所述台面的整个上表面上沉积铬层，形成所述多个特征中的至少一个，其中所述台面具有预定高度。

6. 发明申请

US20130055171A1 Method, Program Product and Apparatus for Performing Double Exposure Lithography 有权
标题翻译：用于进行双重曝光光刻的方法，程序产品和装置
公开(公告)号：US20130055171A1
公开(公告)日：2013-02-28
申请号：US13401820
申请日：2012-02-21
申请人： Jang Fung Chen , Duan-Fu Stephen Hsu , Douglas Van Den Broeke
发明人： Jang Fung Chen , Duan-Fu Stephen Hsu , Douglas Van Den Broeke
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G03F1/144 , G03F1/70 , G03F7/70466 , G06F2217/08 , G06F2217/12
摘要： A method of generating complementary masks based on a target pattern having features to be imaged on a substrate for use in a multiple-exposure lithographic imaging process is disclosed. The method includes defining an initial H-mask and an initial V-mask corresponding to the target pattern; identifying horizontal critical features in the H-mask and vertical critical features in the V-mask; assigning a first phase shift and a first percentage transmission to the horizontal critical features, which are to be formed in the H-mask; and assigning a second phase shift and a second percentage transmission to the vertical critical features, which are to be formed in the V-mask. The method further includes the step of assigning chrome to all non-critical features in the H-mask and the V-mask.
摘要翻译：公开了一种基于具有待成像在基板上的特征的目标图案产生互补掩模以在多次曝光光刻成像过程中使用的方法。该方法包括定义对应于目标图案的初始H掩模和初始V掩模; 识别V面罩中H面罩和垂直关键特征的水平关键特征; 将第一相移和第一百分比传输分配给要在H掩模中形成的水平临界特征; 以及将要在V掩模中形成的垂直关键特征分配第二相移和第二百分比传输。该方法还包括将铬分配给H掩模和V掩模中的所有非关键特征的步骤。

7. 发明申请

US20110236808A1 Method and Apparatus for Performing Dark Field Double Dipole Lithography (DDL) 有权
公开(公告)号：US20110236808A1
公开(公告)日：2011-09-29
申请号：US13155259
申请日：2011-06-07
申请人： Duan-Fu Stephen Hsu , Sangbong Park , Douglas Van Den Broeke , Jang Fung Chen
发明人： Duan-Fu Stephen Hsu , Sangbong Park , Douglas Van Den Broeke , Jang Fung Chen
IPC分类号： G03F1/00
CPC分类号： G03F1/36 , G03F1/70 , G03F7/70125 , G03F7/70466
摘要： A method of generating complementary masks for use in a dark field double dipole imaging process. The method includes the steps of identifying a target pattern having a plurality of features, including horizontal and vertical features; generating a horizontal mask based on the target pattern, where the horizontal mask includes low contrast vertical features. The generation of the horizontal mask includes the steps of optimizing the bias of the low contrast vertical features contained in the horizontal mask; and applying assist features to the horizontal mask. The method further includes generating a vertical mask based on the target pattern, where the vertical mask contains low contrast horizontal features. The generation of the vertical mask includes the steps of optimizing the bias of low contrast horizontal features contained in the vertical mask; and applying assist features to the vertical mask.

8. 发明授权

US07981576B2 Method and apparatus for performing dark field double dipole lithography (DDL) 有权
标题翻译：用于进行暗场双偶极子光刻（DDL）的方法和装置
公开(公告)号：US07981576B2
公开(公告)日：2011-07-19
申请号：US12890494
申请日：2010-09-24
申请人： Duan-Fu Stephen Hsu , Sangbong Park , Douglas Van Den Broeke , Jang Fung Chen
发明人： Duan-Fu Stephen Hsu , Sangbong Park , Douglas Van Den Broeke , Jang Fung Chen
IPC分类号： G03F1/00 , G03F1/14 , G06F17/50
CPC分类号： G03F1/36 , G03F1/70 , G03F7/70125 , G03F7/70466
摘要： A method of generating complementary masks for use in a dark field double dipole imaging process. The method includes the steps of identifying a target pattern having a plurality of features, including horizontal and vertical features; generating a horizontal mask based on the target pattern, where the horizontal mask includes low contrast vertical features. The generation of the horizontal mask includes the steps of optimizing the bias of the low contrast vertical features contained in the horizontal mask; and applying assist features to the horizontal mask. The method further includes generating a vertical mask based on the target pattern, where the vertical mask contains low contrast horizontal features. The generation of the vertical mask includes the steps of optimizing the bias of low contrast horizontal features contained in the vertical mask; and applying assist features to the vertical mask.
摘要翻译：一种产生用于暗场双偶极成像过程的互补掩模的方法。该方法包括以下步骤：识别具有多个特征的目标图案，包括水平和垂直特征; 基于目标图案生成水平掩模，其中水平掩模包括低对比度垂直特征。水平掩模的生成包括优化包含在水平掩模中的低对比度垂直特征的偏压的步骤; 并将辅助特征应用于水平掩模。该方法还包括基于目标图案生成垂直掩模，其中垂直掩模包含低对比度水平特征。垂直掩模的产生包括优化垂直掩模中包含的低对比度水平特征的偏差的步骤; 并将辅助特征应用于垂直掩模。

9. 发明申请

US20110014552A1 Method and Apparatus for Performing Dark Field Double Dipole Lithography (DDL) 有权
标题翻译：用于执行暗场双偶极平版印刷术（DDL）的方法和装置
公开(公告)号：US20110014552A1
公开(公告)日：2011-01-20
申请号：US12890494
申请日：2010-09-24
申请人： Duan-Fu Stephen Hsu , Sangbong Park , Douglas Van Den Broeke , Jang Fung Chen
发明人： Duan-Fu Stephen Hsu , Sangbong Park , Douglas Van Den Broeke , Jang Fung Chen
IPC分类号： G03F1/00
CPC分类号： G03F1/36 , G03F1/70 , G03F7/70125 , G03F7/70466
摘要： A method of generating complementary masks for use in a dark field double dipole imaging process. The method includes the steps of identifying a target pattern having a plurality of features, including horizontal and vertical features; generating a horizontal mask based on the target pattern, where the horizontal mask includes low contrast vertical features. The generation of the horizontal mask includes the steps of optimizing the bias of the low contrast vertical features contained in the horizontal mask; and applying assist features to the horizontal mask. The method further includes generating a vertical mask based on the target pattern, where the vertical mask contains low contrast horizontal features. The generation of the vertical mask includes the steps of optimizing the bias of low contrast horizontal features contained in the vertical mask; and applying assist features to the vertical mask.
摘要翻译：一种产生用于暗场双偶极成像过程的互补掩模的方法。该方法包括以下步骤：识别具有多个特征的目标图案，包括水平和垂直特征; 基于目标图案生成水平掩模，其中水平掩模包括低对比度垂直特征。水平掩模的生成包括优化包含在水平掩模中的低对比度垂直特征的偏压的步骤; 并将辅助特征应用于水平掩模。该方法还包括基于目标图案生成垂直掩模，其中垂直掩模包含低对比度水平特征。垂直掩模的产生包括优化垂直掩模中包含的低对比度水平特征的偏差的步骤; 并将辅助特征应用于垂直掩模。

10. 发明授权

US08910091B2 Method, program product and apparatus for performing double exposure lithography 有权
标题翻译：用于进行双曝光光刻的方法，程序产品和装置
公开(公告)号：US08910091B2
公开(公告)日：2014-12-09
申请号：US13401820
申请日：2012-02-21
申请人： Jang Fung Chen , Duan-Fu Stephen Hsu , Douglas Van Den Broeke
发明人： Jang Fung Chen , Duan-Fu Stephen Hsu , Douglas Van Den Broeke
IPC分类号： G06F17/50 , G03F7/20 , G03F1/00
CPC分类号： G06F17/5081 , G03F1/144 , G03F1/70 , G03F7/70466 , G06F2217/08 , G06F2217/12
摘要： A method of generating complementary masks based on a target pattern having features to be imaged on a substrate for use in a multiple-exposure lithographic imaging process is disclosed. The method includes defining an initial H-mask and an initial V-mask corresponding to the target pattern; identifying horizontal critical features in the H-mask and vertical critical features in the V-mask; assigning a first phase shift and a first percentage transmission to the horizontal critical features, which are to be formed in the H-mask; and assigning a second phase shift and a second percentage transmission to the vertical critical features, which are to be formed in the V-mask. The method further includes the step of assigning chrome to all non-critical features in the H-mask and the V-mask.
摘要翻译：公开了一种基于具有待成像在基板上的特征的目标图案产生互补掩模以在多次曝光光刻成像过程中使用的方法。该方法包括定义对应于目标图案的初始H掩模和初始V掩模; 识别V面罩中H面罩和垂直关键特征的水平关键特征; 将第一相移和第一百分比传输分配给要在H掩模中形成的水平临界特征; 以及将要在V掩模中形成的垂直关键特征分配第二相移和第二百分比传输。该方法还包括将铬分配给H掩模和V掩模中的所有非关键特征的步骤。

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