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    • 4. 发明授权
    • Retiming-based design flow for delay recovery on inter-die paths in 3D ICs
    • 基于重定时的设计流程,用于3D IC中的管芯间路径上的延迟恢复
    • US08832608B1
    • 2014-09-09
    • US13919022
    • 2013-06-17
    • Duke University
    • Krishnendu ChakrabartyBrandon Noia
    • G06F17/50
    • G06F17/505G06F2217/14G06F2217/84
    • A three dimensional (3D) stacked integrated circuit (IC) design-for-Testing (DfT) die-level wrapper boundary register having a bypass mode and design-level DfT delay recovery techniques are provided. Die wrappers that contain boundary registers at the interface between dies can be inserted into 3D ICs where the boundary registers include a gated scan flop with a bypass line passing the functional input to a through-silicon-via (TSV) in a manner avoiding the clocked stages of the gated scan flop during functional operation. A retiming process can be applied during design layout using a simulation/routing tool or standalone program to recover the additional delay added to the TSV paths by the DfT insertion. Retiming can be performed at both die and stack level, and in further embodiments, logic redistribution across adjacent dies of the stack can be performed for further delay optimization.
    • 提供了具有旁路模式和设计级DfT延迟恢复技术的三维(3D)堆叠集成电路(IC)设计测试(DfT)晶粒级封装边界寄存器。 在芯片之间的接口处包含边界寄存器的包装器可以插入到3D IC中,其中边界寄存器包括门控扫描触发器,旁路线将功能输入通过穿通硅通孔(TSV),以避免时钟 功能运行期间门控扫描触发器的阶段。 可以使用仿真/路由工具或独立程序在设计布局期间应用重新定时过程,以通过DfT插入恢复添加到TSV路径的附加延迟。 可以在管芯和堆叠级别执行重新定时,并且在另外的实施例中,可以执行跨堆叠的相邻管芯的逻辑重新分配用于进一步的延迟优化。
    • 7. 发明授权
    • Non-invasive pre-bond TSV test using ring oscillators and multiple voltage levels
    • 使用环形振荡器和多个电压电平的非侵入性前置键合TSV测试
    • US09482720B2
    • 2016-11-01
    • US13767089
    • 2013-02-14
    • DUKE UNIVERSITY
    • Krishnendu ChakrabartySergej Deutsch
    • G01R31/26G01R31/3185
    • G01R31/2853G01R31/2601G01R31/2894G01R31/318558
    • A design for test (DfT) architecture is provided that enables pre-bond parametric testing of through-silicon vias (TSVs). A grouping of N number of input/output (I/O) segments are configured to receive a test signal in a feedback loop, where each I/O segment includes one or more buffers (or inverters) and a TSV connected at one end to the one or more buffers. The TSV acts as a shunt-connected capacitor—when defect free—and includes a load resistance when the TSV contains a defect. Each I/O segment can also include one or two multiplexers to control whether the I/O segment receives a test or functional signal and, optionally, whether the I/O segment is bypassed or included in the ring oscillator. The varying loads caused by the defects cause variations in the delay across the buffers (or inverters) of an I/O segment that can be detected in the output signal.
    • 提供了一种用于测试(DfT)架构的设计,可以实现通硅通孔(TSV)的预键参数测试。 N个输入/输出(I / O)段的分组被配置为在反馈回路中接收测试信号,其中每个I / O段包括一个或多个缓冲器(或反相器)和一端连接到一个TSV 一个或多个缓冲区。 当TSV包含缺陷时,TSV充当分流连接的电容器 - 当缺陷自由时包含负载电阻。 每个I / O段还可以包括一个或两个多路复用器,以控制I / O段是否接收到测试或功能信号,以及可选地,该I / O段是否被绕过或包含在环形振荡器中。 由缺陷引起的变化的负载导致可在输出信号中检测到的I / O段的缓冲器(或反相器)之间的延迟变化。