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1. 发明授权

US09419208B2 Magnetoresistive memory element and method of fabricating same 有权
标题翻译：磁阻存储元件及其制造方法
公开(公告)号：US09419208B2
公开(公告)日：2016-08-16
申请号：US15046483
申请日：2016-02-18
申请人： Everspin Technologies, Inc.
发明人： Renu Whig , Jijun Sun , Nicholas Rizzo , Jon Slaughter , Dimitri Houssameddine , Frederick Mancoff
IPC分类号： H01L29/82 , H01L43/08 , H01L43/02 , H01L43/10 , G11C11/16
CPC分类号： H01L43/12 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/10
摘要： A magnetoresistive memory element (e.g., a spin-torque magnetoresistive memory element) includes a fixed magnetic layer, a free magnetic layer having perpendicular magnetic anisotropy, and a first dielectric, disposed between the fixed magnetic layer and the free magnetic layer. A first surface of the first dielectric is in contact with a first surface of the free magnetic layer. The magnetoresistive memory element further includes a second dielectric, having a first surface that is in contact with a second surface of the free magnetic layer, a conductor, including electrically conductive material, and an electrode, disposed between the second dielectric and the conductor. The electrode includes: (i) a non-ferromagnetic portion having a surface that is in contact with a second surface of the second dielectric, and (ii) a second portion including at least one ferromagnetic material disposed between the non-ferromagnetic portion of the electrode and the conductor.
摘要翻译：磁阻存储元件（例如，自旋转矩磁阻存储元件）包括固定磁性层，具有垂直磁各向异性的自由磁性层和设置在固定磁性层和自由磁性层之间的第一电介质。第一电介质的第一表面与自由磁性层的第一表面接触。磁阻存储元件还包括第二电介质，其具有与自由磁性层的第二表面接触的第一表面，包括导电材料的导体以及设置在第二电介质和导体之间的电极。电极包括：（i）具有与第二电介质的第二表面接触的表面的非铁磁部分，和（ii）第二部分，其包括设置在第二电介质的非铁磁部分之间的至少一个铁磁材料电极和导体。

2. 发明授权

US10622554B2 Magnetoresistive stack and method of fabricating same 有权
公开(公告)号：US10622554B2
公开(公告)日：2020-04-14
申请号：US16419165
申请日：2019-05-22
申请人： EVERSPIN TECHNOLOGIES, INC.
发明人： Renu Whig , Jijun Sun , Nicholas Rizzo , Jon Slaughter , Dimitri Houssameddine , Frederick Mancoff
IPC分类号： H01L21/02 , H01L43/12 , H01L43/10 , H01L43/08 , H01L43/02 , G11C11/16
CPC分类号： H01L43/12 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/10
摘要： A magnetoresistive element (e.g., a spin-torque magnetoresistive memory element) includes a fixed magnetic layer, a free magnetic layer, having a high-iron alloy interface region located along a surface of the free magnetic layer, wherein the high-iron alloy interface region has at least 50% iron by atomic composition, and a first dielectric, disposed between the fixed magnetic layer and the free magnetic layer. The magnetoresistive element further includes a second dielectric, having a first surface that is in contact with the surface of the free magnetic layer, and an electrode, disposed between the second dielectric and a conductor. The electrode includes: (i) a non-ferromagnetic portion having a surface that is in contact with a second surface of the second dielectric, and (ii) a second portion having at least one ferromagnetic material disposed between the non-ferromagnetic portion of the electrode and the conductor.

3. 发明授权

US10199574B2 Magnetoresistive stack and method of fabricating same 有权
公开(公告)号：US10199574B2
公开(公告)日：2019-02-05
申请号：US15941153
申请日：2018-03-30
申请人： Everspin Technologies, Inc.
发明人： Renu Whig , Jijun Sun , Nicholas Rizzo , Jon Slaughter , Dimitri Houssameddine , Frederick Mancoff
IPC分类号： H01L27/108 , H01L43/12 , H01L43/08 , H01L43/10 , H01L43/02 , G11C11/16
摘要： A magnetoresistive element (e.g., a spin-torque magnetoresistive memory element) includes a fixed magnetic layer, a free magnetic layer, having a high-iron alloy interface region located along a surface of the free magnetic layer, wherein the high-iron alloy interface region has at least 50% iron by atomic composition, and a first dielectric, disposed between the fixed magnetic layer and the free magnetic layer. The magnetoresistive element further includes a second dielectric, having a first surface that is in contact with the surface of the free magnetic layer, and an electrode, disposed between the second dielectric and a conductor. The electrode includes: (i) a non-ferromagnetic portion having a surface that is in contact with a second surface of the second dielectric, and (ii) a second portion having at least one ferromagnetic material disposed between the non-ferromagnetic portion of the electrode and the conductor.

4. 发明申请

US20170125670A1 Magnetoresistive Stack and Method of Fabricating Same 审中-公开
公开(公告)号：US20170125670A1
公开(公告)日：2017-05-04
申请号：US15400889
申请日：2017-01-06
申请人： Everspin Technologies, Inc.
发明人： Renu Whig , Jijun Sun , Nicholas Rizzo , Jon Slaughter , Dimitri Houssameddine , Frederick Mancoff
IPC分类号： H01L43/12 , H01L43/08 , H01L43/10
CPC分类号： H01L43/12 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/10
摘要： A magnetoresistive element (e.g., a spin-torque magnetoresistive memory element) includes a fixed magnetic layer, a free magnetic layer, having a high-iron alloy interface region located along a surface of the free magnetic layer, wherein the high-iron alloy interface region has at least 50% iron by atomic composition, and a first dielectric, disposed between the fixed magnetic layer and the free magnetic layer. The magnetoresistive element further includes a second dielectric, having a first surface that is in contact with the surface of the free magnetic layer, and an electrode, disposed between the second dielectric and a conductor. The electrode includes: (i) a non-ferromagnetic portion having a surface that is in contact with a second surface of the second dielectric, and (ii) a second portion having at least one ferromagnetic material disposed between the non-ferromagnetic portion of the electrode and the conductor.

5. 发明申请

US20160163964A1 Magnetoresistive Memory Element and Method of Fabricating Same 审中-公开
标题翻译：磁阻记忆元件及其制造方法
公开(公告)号：US20160163964A1
公开(公告)日：2016-06-09
申请号：US15046483
申请日：2016-02-18
申请人： Everspin Technologies, Inc.
发明人： Renu Whig , Jijun Sun , Nicholas Rizzo , Jon Slaughter , Dimitri Houssameddine , Frederick Mancoff
IPC分类号： H01L43/08 , H01L43/10 , G11C11/16 , H01L43/02
CPC分类号： H01L43/12 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/10
摘要： A magnetoresistive memory element (e.g., a spin-torque magnetoresistive memory element) includes a fixed magnetic layer, a free magnetic layer having perpendicular magnetic anisotropy, and a first dielectric, disposed between the fixed magnetic layer and the free magnetic layer. A first surface of the first dielectric is in contact with a first surface of the free magnetic layer. The magnetoresistive memory element further includes a second dielectric, having a first surface that is in contact with a second surface of the free magnetic layer, a conductor, including electrically conductive material, and an electrode, disposed between the second dielectric and the conductor. The electrode includes: (i) a non-ferromagnetic portion having a surface that is in contact with a second surface of the second dielectric, and (ii) a second portion including at least one ferromagnetic material disposed between the non-ferromagnetic portion of the electrode and the conductor.
摘要翻译：磁阻存储元件（例如，自旋转矩磁阻存储元件）包括固定磁性层，具有垂直磁各向异性的自由磁性层和设置在固定磁性层和自由磁性层之间的第一电介质。第一电介质的第一表面与自由磁性层的第一表面接触。磁阻存储元件还包括第二电介质，其具有与自由磁性层的第二表面接触的第一表面，包括导电材料的导体以及设置在第二电介质和导体之间的电极。电极包括：（i）具有与第二电介质的第二表面接触的表面的非铁磁部分，和（ii）第二部分，其包括设置在第二电介质的非铁磁部分之间的至少一个铁磁材料电极和导体。

6. 发明申请

US20160013401A1 Magnetoresistive Memory Element and Method of Fabricating Same 审中-公开
标题翻译：磁阻记忆元件及其制造方法
公开(公告)号：US20160013401A1
公开(公告)日：2016-01-14
申请号：US14860657
申请日：2015-09-21
申请人： Everspin Technologies, Inc.
发明人： Renu Whig , Jijun Sun , Nicholas Rizzo , Jon Slaughter , Dimitri Houssameddine , Frederick Mancoff
IPC分类号： H01L43/08 , H01L43/10 , H01L43/12
CPC分类号： H01L43/12 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/10
摘要： A magnetoresistive memory element (for example, a spin-torque magnetoresistive memory element), includes first and second dielectric layers, wherein at least one of the dielectric layers is a magnetic tunnel junction. The memory element also includes a free magnetic layer having a first surface in contact with the first dielectric layer and a second surface in contact with the second dielectric layer. The free magnetic layer, which is disposed between the first and second dielectric layers, includes (i) a first high-iron interface region located along the first surface of the free magnetic layer, wherein the first high-iron interface region has at least 50% iron by atomic composition, and (ii) a first layer of ferromagnetic material adjacent to the first high-iron interface region, the first high-iron interface region between the first layer of ferromagnetic material and the first surface of the free magnetic layer.
摘要翻译：磁阻存储元件（例如，自旋扭矩磁阻存储元件）包括第一和第二电介质层，其中至少一个电介质层是磁性隧道结。存储元件还包括具有与第一介电层接触的第一表面和与第二介电层接触的第二表面的自由磁性层。设置在第一和第二电介质层之间的自由磁性层包括（i）沿着自由磁性层的第一表面设置的第一高铁界面区域，其中第一高铁界面区域具有至少50 以及（ii）与第一高铁界面区域相邻的第一铁磁材料层，第一铁磁材料层与自由磁性层的第一表面之间的第一高铁界面区域。

7. 发明授权

US11127896B2 Shared spin-orbit-torque write line in a spin-orbit-torque MRAM 有权
公开(公告)号：US11127896B2
公开(公告)日：2021-09-21
申请号：US16251230
申请日：2019-01-18
申请人： Everspin Technologies, Inc.
发明人： Syed M. Alam , Thomas Andre , Frederick Mancoff , Sumio Ikegawa
IPC分类号： H01L43/08 , G11C11/16 , H01L27/22 , H01L43/02 , H01L43/10
摘要： The present disclosure is drawn to, among other things, a magnetoresistive memory. The magnetoresistive memory comprises a plurality of magnetoresistive memory devices, wherein each magnetoresistive memory device includes a fixed magnetic region, a free magnetic region, and an intermediate region disposed in between the fixed and free magnetic regions. The magnetoresistive memory further comprises a first conductor extending adjacent each magnetoresistive memory device of the plurality of magnetoresistive devices, wherein the first conductor is in electrical contact with the free magnetic region of each magnetoresistive memory device.

8. 发明授权

US10347828B2 Magnetoresistive stack and method of fabricating same 有权
公开(公告)号：US10347828B2
公开(公告)日：2019-07-09
申请号：US16230031
申请日：2018-12-21
申请人： EVERSPIN TECHNOLOGIES, INC.
发明人： Renu Whig , Jijun Sun , Nicholas Rizzo , Jon Slaughter , Dimitri Houssameddine , Frederick Mancoff
IPC分类号： H01L27/108 , H01L43/12 , G11C11/16 , H01L43/10 , H01L43/08 , H01L43/02
摘要： A magnetoresistive element (e.g., a spin-torque magnetoresistive memory element) includes a fixed magnetic layer, a free magnetic layer, having a high-iron alloy interface region located along a surface of the free magnetic layer, wherein the high-iron alloy interface region has at least 50% iron by atomic composition, and a first dielectric, disposed between the fixed magnetic layer and the free magnetic layer. The magnetoresistive element further includes a second dielectric, having a first surface that is in contact with the surface of the free magnetic layer, and an electrode, disposed between the second dielectric and a conductor. The electrode includes: (i) a non-ferromagnetic portion having a surface that is in contact with a second surface of the second dielectric, and (ii) a second portion having at least one ferromagnetic material disposed between the non-ferromagnetic portion of the electrode and the conductor.

9. 发明申请

US20180226574A1 MAGNETORESISTIVE STACK AND METHOD OF FABRICATING SAME 审中-公开
公开(公告)号：US20180226574A1
公开(公告)日：2018-08-09
申请号：US15941153
申请日：2018-03-30
申请人： Everspin Technologies, Inc.
发明人： Renu Whig , Jijun Sun , Nicholas Rizzo , Jon Slaughter , Dimitri Houssameddine , Frederick Mancoff
IPC分类号： H01L43/12 , G11C11/16 , H01L43/10 , H01L43/08 , H01L43/02
CPC分类号： H01L43/12 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/10
摘要： A magnetoresistive element (e.g., a spin-torque magnetoresistive memory element) includes a fixed magnetic layer, a free magnetic layer, having a high-iron alloy interface region located along a surface of the free magnetic layer, wherein the high-iron alloy interface region has at least 50% iron by atomic composition, and a first dielectric, disposed between the fixed magnetic layer and the free magnetic layer. The magnetoresistive element further includes a second dielectric, having a first surface that is in contact with the surface of the free magnetic layer, and an electrode, disposed between the second dielectric and a conductor. The electrode includes: (i) a non-ferromagnetic portion having a surface that is in contact with a second surface of the second dielectric, and (ii) a second portion having at least one ferromagnetic material disposed between the non-ferromagnetic portion of the electrode and the conductor.

10. 发明授权

US11488647B2 Stacked magnetoresistive structures and methods therefor 有权
公开(公告)号：US11488647B2
公开(公告)日：2022-11-01
申请号：US17255915
申请日：2019-06-27
申请人： Everspin Technologies, Inc.
发明人： Jijun Sun , Frederick Mancoff , Jason Janesky , Kevin Conley , Lu Hui , Sumio Ikegawa
IPC分类号： G11C11/16 , H01L27/22 , H01L43/02 , H01L43/12
摘要： Aspects of the present disclosure are directed to magnetic tunnel junction (MTJ) structures comprising multiple MTJ bits connected in series. For example, a magnetic tunnel junction (MTJ) stack according to the present disclosure may include at least a first MTJ bit and a second MTJ bit stacked above the first MTJ bit, and a resistance state of the MTJ stack may be read by passing a single read current through both the first MTJ bit and the second MTJ bit.

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