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1. 发明授权

US08149500B2 Bragg mirror and method for making same 有权
标题翻译：布拉格镜及其制作方法
公开(公告)号：US08149500B2
公开(公告)日：2012-04-03
申请号：US12697242
申请日：2010-01-30
申请人： Ed Godshalk , Guillaume Bouche
发明人： Ed Godshalk , Guillaume Bouche
IPC分类号： G02F1/33
CPC分类号： H03H9/175 , H03H3/04 , H03H2003/025
摘要： In an embodiment, set forth by way of example and not limitation, a Bragg mirror includes a first bi-layer of a first thickness and a second bi-layer of a second thickness which is different from the first thickness. In this exemplary embodiment, the first bi-layer consists essentially of a first high impedance layer and a first low impedance layer, and the second bi-layer of a second thickness which is different from the first thickness, the second bi-layer consisting essentially of a second high impedance layer and a second low impedance layer. Preferably, the first bi-layer is configured to substantially reflect a first wavelength and the second bi-layer is configured to substantially reflect a second wavelength different from the first wavelength.
摘要翻译：在通过示例而非限制的方式阐述的实施例中，布拉格反射镜包括第一厚度的第一双层和与第一厚度不同的第二厚度的第二双层。在该示例性实施例中，第一双层基本上由第一高阻抗层和第一低阻抗层组成，第二厚度与第一厚度不同的第二厚度构成，第二双层基本上由的第二高阻抗层和第二低阻抗层。优选地，第一双层被配置为基本上反射第一波长，并且第二双层被配置为基本上反射与第一波长不同的第二波长。

2. 发明申请

US20100123948A1 Bragg Mirror and Method for Making Same 有权
标题翻译：布拉格镜和制作相同的方法
公开(公告)号：US20100123948A1
公开(公告)日：2010-05-20
申请号：US12697242
申请日：2010-01-30
申请人： Ed Godshalk , Guillaume Bouche
发明人： Ed Godshalk , Guillaume Bouche
IPC分类号： G02F1/33 , B05D5/06
CPC分类号： H03H9/175 , H03H3/04 , H03H2003/025
摘要： In an embodiment, set forth by way of example and not limitation, a Bragg mirror includes a first bi-layer of a first thickness and a second bi-layer of a second thickness which is different from the first thickness. In this exemplary embodiment, the first bi-layer consists essentially of a first high impedance layer and a first low impedance layer, and the second bi-layer of a second thickness which is different from the first thickness, the second bi-layer consisting essentially of a second high impedance layer and a second low impedance layer. Preferably, the first bi-layer is configured to substantially reflect a first wavelength and the second bi-layer is configured to substantially reflect a second wavelength different from the first wavelength.
摘要翻译：在通过示例而非限制的方式阐述的实施例中，布拉格反射镜包括第一厚度的第一双层和与第一厚度不同的第二厚度的第二双层。在该示例性实施例中，第一双层基本上由第一高阻抗层和第一低阻抗层组成，第二厚度与第一厚度不同的第二厚度构成，第二双层基本上由的第二高阻抗层和第二低阻抗层。优选地，第一双层被配置为基本上反射第一波长，并且第二双层被配置为基本上反射与第一波长不同的第二波长。

3. 发明授权

US07684109B2 Bragg mirror optimized for shear waves 有权
标题翻译：针对剪切波优化的布拉格镜
公开(公告)号：US07684109B2
公开(公告)日：2010-03-23
申请号：US11713461
申请日：2007-02-28
申请人： Ed Godshalk , Guillaume Bouche
发明人： Ed Godshalk , Guillaume Bouche
IPC分类号： G02F1/33 , G02F1/03
CPC分类号： H03H9/175 , H03H3/04 , H03H2003/025
摘要： In an embodiment, set forth by way of example and not limitation, a Bragg mirror includes a first bi-layer of a first thickness and a second bi-layer of a second thickness which is different from the first thickness. In this exemplary embodiment, the first bi-layer consists essentially of a first high impedance layer and a first low impedance layer, and the second bi-layer of a second thickness which is different from the first thickness, the second bi-layer consisting essentially of a second high impedance layer and a second low impedance layer. Preferably, the first bi-layer is configured to substantially reflect a first wavelength and the second bi-layer is configured to substantially reflect a second wavelength different from the first wavelength.
摘要翻译：在通过示例而非限制的方式阐述的实施例中，布拉格反射镜包括第一厚度的第一双层和与第一厚度不同的第二厚度的第二双层。在该示例性实施例中，第一双层基本上由第一高阻抗层和第一低阻抗层组成，第二厚度与第一厚度不同的第二厚度构成，第二双层基本上由的第二高阻抗层和第二低阻抗层。优选地，第一双层被配置为基本上反射第一波长，并且第二双层被配置为基本上反射与第一波长不同的第二波长。

4. 发明申请

US20080204857A1 Bragg mirror optimized for shear waves 有权
标题翻译：针对剪切波优化的布拉格镜
公开(公告)号：US20080204857A1
公开(公告)日：2008-08-28
申请号：US11713461
申请日：2007-02-28
申请人： Ed Godshalk , Guillaume Bouche
发明人： Ed Godshalk , Guillaume Bouche
IPC分类号： G02F1/33 , G10K11/00
CPC分类号： H03H9/175 , H03H3/04 , H03H2003/025
摘要： In an embodiment, set forth by way of example and not limitation, a Bragg mirror includes a first bi-layer of a first thickness and a second bi-layer of a second thickness which is different from the first thickness. In this exemplary embodiment, the first bi-layer consists essentially of a first high impedance layer and a first low impedance layer, and the second bi-layer of a second thickness which is different from the first thickness, the second bi-layer consisting essentially of a second high impedance layer and a second low impedance layer. Preferably, the first bi-layer is configured to substantially reflect a first wavelength and the second bi-layer is configured to substantially reflect a second wavelength different from the first wavelength.
摘要翻译：在通过示例而非限制的方式阐述的实施例中，布拉格反射镜包括第一厚度的第一双层和与第一厚度不同的第二厚度的第二双层。在该示例性实施例中，第一双层基本上由第一高阻抗层和第一低阻抗层组成，第二厚度与第一厚度不同的第二厚度构成，第二双层基本上由的第二高阻抗层和第二低阻抗层。优选地，第一双层被配置为基本上反射第一波长，并且第二双层被配置为基本上反射与第一波长不同的第二波长。

5. 发明授权

US09450074B1 LDMOS with field plate connected to gate 有权
标题翻译： LDMOS与场板连接到门
公开(公告)号：US09450074B1
公开(公告)日：2016-09-20
申请号：US13194210
申请日：2011-07-29
申请人： Fanling Hsu Yang , Timothy K. McGuire , Sudarsan Uppili , Guillaume Bouche
发明人： Fanling Hsu Yang , Timothy K. McGuire , Sudarsan Uppili , Guillaume Bouche
IPC分类号： H01L29/40 , H01L29/66 , H01L29/78
CPC分类号： H01L29/66681 , H01L29/0692 , H01L29/402 , H01L29/404 , H01L29/42368 , H01L29/4238 , H01L29/66659 , H01L29/7816 , H01L29/7824 , H01L29/7835
摘要： Semiconductor devices, such as laterally diffused metal oxide semiconductor (LDMOS) devices, are described that have a field plate connected to a gate of the device. In one or more implementations, the semiconductor devices include a substrate having a source region of a first conductivity type and a drain region of the first conductivity type. A gate is positioned over the surface and between the source region and the drain region. The gate is configured to receive a voltage so that a conduction region may be formed at least partially below the gate to allow majority carriers to travel between the source region and the drain region. The device also includes a field plate at least partially positioned over and connected to the gate. The field plate is configured to shape an electrical field generated between the source region and the drain region when a voltage is applied to the gate.
摘要翻译：描述了半导体器件，例如横向扩散的金属氧化物半导体（LDMOS）器件，其具有连接到器件的栅极的场板。在一个或多个实施方案中，半导体器件包括具有第一导电类型的源极区和第一导电类型的漏极区的衬底。栅极位于表面上并且在源极区域和漏极区域之间。栅极被配置为接收电压，使得可以至少部分地在栅极下方形成导电区域，以允许多数载流子在源极区域和漏极区域之间行进。该装置还包括至少部分地定位在栅极上并连接到栅极的场板。场板被配置为当电压施加到栅极时，使在源极区域和漏极区域之间产生的电场成形。

6. 发明授权

US09171916B1 LDMOS with thick interlayer-dielectric layer 有权
标题翻译： LDMOS具有较厚的层间介电层
公开(公告)号：US09171916B1
公开(公告)日：2015-10-27
申请号：US13272301
申请日：2011-10-13
申请人： David L. Snyder , Sudarsan Uppili , Guillaume Bouche
发明人： David L. Snyder , Sudarsan Uppili , Guillaume Bouche
IPC分类号： H01L29/40 , H01L21/8238
CPC分类号： H01L29/402 , H01L21/82385 , H01L29/063 , H01L29/1095 , H01L29/42368 , H01L29/66659 , H01L29/66681 , H01L29/7816 , H01L29/7835
摘要： Semiconductor devices, such as LDMOS devices, are described that include an interlayer-dielectric layer (ILD) region having a thickness of at least two and one half (2.5) microns to increase the maximum breakdown voltage. In one or more implementations, the semiconductor devices include a substrate having a source region and a drain region formed proximate to a surface of the substrate. A gate is positioned over the surface and between the source region and the drain region. An ILD region having a thickness of at least two and one half (2.5) microns is formed over the surface and the gate of the device. The device also includes one or more field plates configured to shape an electrical field generated between the source region and the drain region when a voltage is applied to the gate.
摘要翻译：描述了诸如LDMOS器件的半导体器件，其包括具有至少两个和一个（2.5）微米厚度的层间介电层（ILD）区域以增加最大击穿电压。在一个或多个实施方案中，半导体器件包括具有靠近衬底表面形成的源区和漏区的衬底。栅极位于表面上并且在源极区域和漏极区域之间。在器件的表面和栅极上形成具有至少两个半（2.5）微米厚度的ILD区域。该装置还包括一个或多个场板，其配置成当电压施加到栅极时，使在源极区域和漏极区域之间产生的电场成形。

7. 发明授权

US08159109B2 Microresonator 有权
标题翻译：微谐振器
公开(公告)号：US08159109B2
公开(公告)日：2012-04-17
申请号：US12850126
申请日：2010-08-04
申请人： Nicolas Abelé , Pascal Ancey , Alexandre Talbot , Karim Segueni , Guillaume Bouche , Thomas Skotnicki , Stéphane Monfray , Fabrice Casset
发明人： Nicolas Abelé , Pascal Ancey , Alexandre Talbot , Karim Segueni , Guillaume Bouche , Thomas Skotnicki , Stéphane Monfray , Fabrice Casset
IPC分类号： H01L21/00
CPC分类号： H03H9/2405 , H03H3/0072 , H03H2009/02496
摘要： A microresonator comprising a single-crystal silicon resonant element and at least one activation electrode placed close to the resonant element, in which the resonant element is placed in an opening of a semiconductor layer covering a substrate, the activation electrode being formed in the semiconductor layer and being level at the opening.
摘要翻译：一种微谐振器，包括单晶硅谐振元件和靠近谐振元件放置的至少一个激活电极，其中谐振元件放置在覆盖衬底的半导体层的开口中，激活电极形成在半导体层中并在开幕式的水平。

8. 发明授权

US07960900B2 Assembly of a microswitch and of an acoustic resonator 有权
标题翻译：微型开关和声谐振器的组装
公开(公告)号：US07960900B2
公开(公告)日：2011-06-14
申请号：US11629586
申请日：2005-06-13
申请人： Grégory Caruyer , Guillaume Bouche , Pascal Ancey
发明人： Grégory Caruyer , Guillaume Bouche , Pascal Ancey
IPC分类号： H01L41/08
CPC分类号： B81C1/0015 , B81B3/0021 , B81B2201/032 , B81B2203/0315 , B81B2203/04 , H01H57/00 , H01H2057/006 , H03H9/172 , H03H2009/241 , Y10T29/49105
摘要： The invention relates to a device consisting of an electromechanical microswitch comprising mobile beam (2). According to the invention, at least part (14) of the beam forms the piezoelectric element of a piezoelectric actuator.
摘要翻译：本发明涉及由包括移动光束（2）的机电微型开关组成的装置。根据本发明，梁的至少一部分（14）形成压电致动器的压电元件。

9. 发明授权

US07960200B2 Orientation-dependent etching of deposited AlN for structural use and sacrificial layers in MEMS 有权
标题翻译：在MEMS中用于结构使用和牺牲层的沉积AlN的取向依赖蚀刻
公开(公告)号：US07960200B2
公开(公告)日：2011-06-14
申请号：US11789578
申请日：2007-04-24
申请人： Guillaume Bouche , Ralph N. Wall
发明人： Guillaume Bouche , Ralph N. Wall
IPC分类号： H01L21/00
CPC分类号： B81C1/0015 , B81B2201/014 , B81B2203/0384 , B81C1/00333 , B81C2201/0107 , B81C2201/0157 , B81C2203/0118
摘要： In accordance with the present invention, accurate and easily controlled sloped walls may be formed using AlN and preferably a heated TMAH for such purpose as the fabrication of MEMS devices, wafer level packaging and fabrication of fluidic devices. Various embodiments are disclosed.
摘要翻译：根据本发明，可以使用AlN和优选加热的TMAH来形成精确且易于控制的倾斜壁，用于MEMS器件的制造，晶片级封装和流体器件的制造。公开了各种实施例。

10. 发明申请

US20100295416A1 MICRORESONATOR 有权
标题翻译：微型计算机
公开(公告)号：US20100295416A1
公开(公告)日：2010-11-25
申请号：US12850126
申请日：2010-08-04
申请人： Nicolas Abelé , Pascal Ancey , Alexandre Talbot , Karim Segueni , Guillaume Bouche , Thomas Skotnicki , Stéphane Monfray , Fabrice Casset
发明人： Nicolas Abelé , Pascal Ancey , Alexandre Talbot , Karim Segueni , Guillaume Bouche , Thomas Skotnicki , Stéphane Monfray , Fabrice Casset
IPC分类号： H02N1/08
CPC分类号： H03H9/2405 , H03H3/0072 , H03H2009/02496
摘要： A microresonator comprising a single-crystal silicon resonant element and at least one activation electrode placed close to the resonant element, in which the resonant element is placed in an opening of a semiconductor layer covering a substrate, the activation electrode being formed in the semiconductor layer and being level at the opening.
摘要翻译：一种微谐振器，包括单晶硅谐振元件和靠近谐振元件放置的至少一个激活电极，其中谐振元件放置在覆盖衬底的半导体层的开口中，激活电极形成在半导体层中并在开幕式的水平。

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