专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20090243025A1 PIXEL STRUCTURE WITH A PHOTODETECTOR HAVING AN EXTENDED DEPLETION DEPTH 审中-公开
标题翻译：具有延伸深度深度的光电转换器的像素结构
公开(公告)号：US20090243025A1
公开(公告)日：2009-10-01
申请号：US12054505
申请日：2008-03-25
申请人： Eric G. Stevens , Hung Q. Doan , Shou-Gwo Wuu , Chung-Wei Chang
发明人： Eric G. Stevens , Hung Q. Doan , Shou-Gwo Wuu , Chung-Wei Chang
IPC分类号： H01L31/101
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14689
摘要： An image sensor includes an imaging area that includes a plurality of pixels that are formed in a substrate layer of a first conductivity type. Each pixel includes a collection region that is formed in a portion of the substrate layer and doped with a dopant of a first conductivity type. A plurality of wells are disposed in portions of the substrate layer and doped with another dopant of the second conductivity type. Each well is positioned laterally adjacent to each collection region. A buried layer spans the imaging area and is disposed in a portion of the substrate layer that is beneath the photodetectors and the wells. The buried layer is doped with a dopant of a second conductivity type. Each collection region, each well, and the buried layer are formed such that a region of the substrate layer having substantially the same doping as the substrate layer resides between each collection region and the buried layer.
摘要翻译：图像传感器包括具有形成在第一导电类型的衬底层中的多个像素的成像区域。每个像素包括形成在衬底层的一部分中并掺杂有第一导电类型的掺杂剂的收集区域。多个阱设置在衬底层的部分中并且掺杂有另一种第二导电类型的掺杂剂。每个井横向定位在每个收集区域附近。掩埋层跨越成像区域并且被布置在基底层的位于光电检测器和孔下方的部分中。掩埋层掺杂有第二导电类型的掺杂剂。每个收集区域，每个阱和掩埋层被形成为使得具有与衬底层基本相同的掺杂的衬底层的区域驻留在每个收集区域和掩埋层之间。

2. 发明申请

US20120080731A1 PHOTODETECTOR ISOLATION IN IMAGE SENSORS 审中-公开
标题翻译：图像传感器中的光电隔离
公开(公告)号：US20120080731A1
公开(公告)日：2012-04-05
申请号：US12894262
申请日：2010-09-30
申请人： Hung Q. Doan , Eric G. Stevens , Robert M. Guidash
发明人： Hung Q. Doan , Eric G. Stevens , Robert M. Guidash
IPC分类号： H01L27/146
CPC分类号： H01L27/1463 , H01L27/14607 , H01L27/1461 , H01L27/14645 , H01L27/14689
摘要： A first shallow trench isolation region is disposed in the silicon semiconductor layer laterally adjacent to a photodetector while a second shallow trench isolation region is disposed in the silicon semiconductor layer laterally adjacent to other electrical components in a pixel. The first and second shallow trench isolation regions each include a trench disposed in the silicon semiconductor layer that is filled with a dielectric material. An isolation layer having the second conductivity is disposed only along a portion of a bottom and only along a sidewall of the trench immediately adjacent to the photodetector. The isolation layer is not disposed along the other portion of the bottom and along the other sidewall of the trench adjacent the photodetector. The isolation layer is not disposed along the bottom and sidewalls of the trench adjacent to the other electrical components.
摘要翻译：第一浅沟槽隔离区域设置在与半导体器件的光电探测器侧向相邻的硅半导体层中，而第二浅沟槽隔离区域设置在与半导体层中的像素中的其它电气元件横向相邻的硅半导体层中。第一和第二浅沟槽隔离区域各自包括设置在硅半导体层中的填充有电介质材料的沟槽。具有第二导电性的隔离层仅沿着底部的一部分并且仅沿着与光电检测器紧邻的沟槽的侧壁设置。隔离层不沿着底部的另一部分并且沿着邻近光电检测器的沟槽的另一个侧壁设置。绝缘层不沿着与其它电气部件相邻的沟槽的底部和侧壁设置。

3. 发明申请

US20100148230A1 TRENCH ISOLATION REGIONS IN IMAGE SENSORS 审中-公开
标题翻译：图像传感器中的分离区域
公开(公告)号：US20100148230A1
公开(公告)日：2010-06-17
申请号：US12332407
申请日：2008-12-11
申请人： Eric G. Stevens , Hung Q. Doan
发明人： Eric G. Stevens , Hung Q. Doan
IPC分类号： H01L21/762 , H01L31/112
CPC分类号： H01L27/14689 , H01L21/76224 , H01L27/1463
摘要： Trenches are formed in a substrate or layer and a solid source doped with one or more dopants is deposited over the image sensor such that the solid source fills the one or more trenches and is disposed on the surface of the substrate. The surface of the image sensor is then planarized so that the solid source remains only in the trenches. A thermal drive operation is performed to cause at least a portion of the one or more dopants in the solid source to diffuse into the portions of the substrate or layer that are immediately adjacent to and surround the sidewall and bottom surfaces of the trenches. The diffused dopant or dopants form passivation regions that passivate the interface between the substrate or layer and the sidewall and bottom surfaces of the trenches.
摘要翻译：沟槽形成在衬底或层中，并且掺杂有一种或多种掺杂剂的固体源沉积在图像传感器上，使得固体源填充一个或多个沟槽并且设置在衬底的表面上。然后将图像传感器的表面平坦化，使得固体源仅保留在沟槽中。执行热驱动操作以使固体源中的一种或多种掺杂剂的至少一部分扩散到紧邻和围绕沟槽的侧壁和底表面的衬底或层的部分。扩散掺杂剂或掺杂剂形成钝化区域，其钝化衬底或层与沟槽的侧壁和底表面之间的界面。

4. 发明申请

US20100140728A1 LATERAL OVERFLOW DRAIN AND CHANNEL STOP REGIONS IN IMAGE SENSORS 有权
公开(公告)号：US20100140728A1
公开(公告)日：2010-06-10
申请号：US12609257
申请日：2009-10-30
申请人： Edmund K. Banghart , Eric G. Stevens , Hung Q. Doan
发明人： Edmund K. Banghart , Eric G. Stevens , Hung Q. Doan
IPC分类号： H01L31/101 , H01L21/265
CPC分类号： H01L27/14887 , H01L27/14656 , H01L27/14674 , H01L27/14683 , H01L27/1485
摘要： A lateral overflow drain and a channel stop are fabricated using a double mask process. Each lateral overflow drain is formed within a respective channel stop. Due to the use of two mask layers, one edge of each lateral overflow drain is aligned, or substantially aligned, with an edge of a respective channel stop.

5. 发明申请

US20120168892A1 LATERAL OVERFLOW DRAIN AND CHANNEL STOP REGIONS IN IMAGE SENSORS 有权
标题翻译：图像传感器中的横向溢流漏斗和通道停止区域
公开(公告)号：US20120168892A1
公开(公告)日：2012-07-05
申请号：US13415021
申请日：2012-03-08
申请人： Edmund K. Banghart , Eric G. Stevens , Hung Q. Doan
发明人： Edmund K. Banghart , Eric G. Stevens , Hung Q. Doan
IPC分类号： H01L31/10
CPC分类号： H01L27/14887 , H01L27/14656 , H01L27/14674 , H01L27/14683 , H01L27/1485
摘要： A lateral overflow drain and a channel stop are fabricated using a double mask process. Each lateral overflow drain is formed within a respective channel stop. Due to the use of two mask layers, one edge of each lateral overflow drain is aligned, or substantially aligned, with an edge of a respective channel stop.
摘要翻译：使用双掩模工艺制造横向溢流漏斗和通道停止。每个横向溢流排水口形成在相应的通道停止件内。由于使用两个掩模层，每个横向溢出漏极的一个边缘与相应的通道停止件的边缘对准或基本对准。

6. 发明申请

US20120083067A1 METHOD FOR FORMING PHOTODETECTOR ISOLATION IN IMAGERS 审中-公开
标题翻译：在图像中形成光电离分离的方法
公开(公告)号：US20120083067A1
公开(公告)日：2012-04-05
申请号：US12894281
申请日：2010-09-30
申请人： Hung Q. Doan , Eric G. Stevens , Robert M. Guidash
发明人： Hung Q. Doan , Eric G. Stevens , Robert M. Guidash
IPC分类号： H01L31/18
CPC分类号： H01L27/14689 , H01L27/14607 , H01L27/1463
摘要： A first shallow trench isolation region is disposed in the silicon semiconductor layer laterally adjacent to a photodetector while a second shallow trench isolation region is disposed in the silicon semiconductor layer laterally adjacent to other electrical components in a pixel. The first and second shallow trench isolation regions each include a trench disposed in the silicon semiconductor layer that is filled with a dielectric material. An isolation layer having the second conductivity is disposed only along a portion of a bottom and only along a sidewall of the trench immediately adjacent to the photodetector. The isolation layer is not disposed along the other portion of the bottom and along the other sidewall of the trench adjacent the photodetector. The isolation layer is not disposed along the bottom and sidewalls of the trench adjacent to the other electrical components.
摘要翻译：第一浅沟槽隔离区域设置在与半导体器件的光电探测器侧向相邻的硅半导体层中，而第二浅沟槽隔离区域设置在与半导体层中的像素中的其它电气元件横向相邻的硅半导体层中。第一和第二浅沟槽隔离区域各自包括设置在硅半导体层中的填充有电介质材料的沟槽。具有第二导电性的隔离层仅沿着底部的一部分并且仅沿着与光电检测器紧邻的沟槽的侧壁设置。隔离层不沿着底部的另一部分并且沿着邻近光电检测器的沟槽的另一个侧壁设置。绝缘层不沿着与其它电气部件相邻的沟槽的底部和侧壁设置。

7. 发明授权

US08076746B2 Back-illuminated image sensors having both frontside and backside photodetectors 有权
标题翻译：具有前侧和后侧光电检测器的背照式图像传感器
公开(公告)号：US08076746B2
公开(公告)日：2011-12-13
申请号：US12459121
申请日：2009-06-26
申请人： John P. McCarten , Cristian A. Tivarus , Joseph R. Summa , Eric G. Stevens , Hung Q. Doan , Robert M. Guidash
发明人： John P. McCarten , Cristian A. Tivarus , Joseph R. Summa , Eric G. Stevens , Hung Q. Doan , Robert M. Guidash
IPC分类号： H01L27/146
CPC分类号： H01L27/14603 , H01L27/1463 , H01L27/14632 , H01L27/1464 , H01L27/14647 , H01L27/14687 , H01L27/14689 , H01L31/035272
摘要： A back-illuminated image sensor includes a sensor layer of a first conductivity type having a frontside and a backside opposite the frontside. One or more frontside regions of a second conductivity type are formed in at least a portion of the frontside of the sensor layer. A backside region of the second conductivity type is formed in the backside of the sensor layer. A plurality of frontside photodetectors of the first conductivity type is disposed in the sensor layer. A distinct plurality of backside photodetectors of the first conductivity type separate from the plurality of frontside photodetectors are formed in the sensor layer contiguous to portions of the region of the second conductivity type. A voltage terminal is disposed on the frontside of the sensor layer. One or more connecting regions of the second conductivity type are disposed in respective portions of the sensor layer between the voltage terminal and the backside region for electrically connecting the voltage terminal to the backside region.
摘要翻译：背照式图像传感器包括第一导电类型的传感器层，其具有前侧和与前侧相对的背面。第二导电类型的一个或多个前侧区域形成在传感器层的前侧的至少一部分中。第二导电类型的背面区域形成在传感器层的背面。第一导电类型的多个前端光电检测器设置在传感器层中。在与第二导电类型的区域的部分相邻的传感器层中形成有与多个前侧光电检测器分离的第一导电类型的不同多个背面光电检测器。电压端子设置在传感器层的前侧。第二导电类型的一个或多个连接区域设置在电压端子和背侧区域之间的传感器层的相应部分中，用于将电压端子电连接到背面区域。

8. 发明申请

US20120080733A1 PHOTODETECTOR ISOLATION IN IMAGE SENSORS 有权
标题翻译：图像传感器中的光电隔离
公开(公告)号：US20120080733A1
公开(公告)日：2012-04-05
申请号：US12966224
申请日：2010-12-13
申请人： Hung Q. Doan , Eric G. Stevens , Robert M. Guidash
发明人： Hung Q. Doan , Eric G. Stevens , Robert M. Guidash
IPC分类号： H01L27/146
CPC分类号： H01L27/1463 , H01L27/14643
摘要： Shallow trench isolation regions are disposed in an n-type silicon semiconductor layer laterally adjacent to a collection region of a photodetector and laterally adjacent to a charge-to-voltage conversion region. The shallow trench isolation regions each include a trench disposed in the silicon semiconductor layer and a first dielectric structure disposed along an interior bottom and sidewalls of each trench. A second dielectric structure is disposed over the pinning layer. The dielectric structures include a silicon nitride layer disposed over an oxide layer. An n-type isolation layer is disposed along only a portion of the exterior bottom of the trench and the exterior sidewall of the trench immediately adjacent to the photodetector. The n-type isolation layer is not disposed along the remaining portion of the bottom or the opposing exterior sidewall of the trench.
摘要翻译：浅沟槽隔离区设置在与光电检测器的收集区域相邻并且横向邻近电荷 - 电压转换区域的n型硅半导体层中。浅沟槽隔离区域各自包括设置在硅半导体层中的沟槽和沿着每个沟槽的内部底部和侧壁设置的第一介电结构。第二电介质结构设置在钉扎层之上。电介质结构包括设置在氧化物层上的氮化硅层。 n型隔离层仅沿着沟槽的外部底部的一部分和紧邻光电检测器的沟槽的外侧壁设置。 n型隔离层不沿着沟槽的底部或相对的外侧壁的剩余部分设置。

9. 发明授权

US06794219B1 Method for creating a lateral overflow drain, anti-blooming structure in a charge coupled device 有权
标题翻译：用于在电荷耦合器件中产生横向溢出漏极，抗起霜结构的方法
公开(公告)号：US06794219B1
公开(公告)日：2004-09-21
申请号：US10628184
申请日：2003-07-28
申请人： Eric G. Stevens , Hung Q. Doan
发明人： Eric G. Stevens , Hung Q. Doan
IPC分类号： H01L2100
CPC分类号： H01L21/2652 , H01L21/76221 , H01L27/14674 , H01L27/14887
摘要： A method for creating a lateral overflow drain, anti-blooming structure in a charge-coupled device, the method includes the steps of providing a substrate of a first conductivity type; providing a layer of silicon dioxide on the substrate; providing a layer of silicon nitride on the silicon dioxide layer; providing a first masking layer on the silicon nitride layer and having an opening in the first masking layer of a dimension which substantially equals a dimension of a subsequently implanted channel stop of the first conductivity type; etching away the exposed silicon nitride within the opening in the first masking layer; implanting ions of the first conductivity type through the first masking layer and into the substrate for creating the channel stop and removing the first masking layer; growing the silicon dioxide layer so that the channel stop is spanned by a thickest field silicon dioxide layer in the etched away portion; patterning a second masking layer having an opening adjacent the channel stop with a dimension substantially equal to a dimension of a subsequently implanted lateral overflow drain of a second conductivity type; etching away the exposed silicon nitride within the opening in the second masking layer; implanting the second conductivity type for forming the lateral overflow drain and removing any remaining masking layer; and growing the silicon dioxide layer so that a thicker silicon dioxide forms spanning the lateral overflow drain and the thickest silicon dioxide layer forms spanning the channel stop.
摘要翻译：一种用于在电荷耦合器件中产生横向溢出漏极，抗起霜结构的方法，所述方法包括以下步骤：提供第一导电类型的衬底; 在衬底上提供二氧化硅层; 在二氧化硅层上提供一层氮化硅; 在所述氮化硅层上提供第一掩模层，并且在所述第一掩模层中具有基本上等于所述第一导电类型的随后注入的通道阻挡件的尺寸的尺寸的开口; 蚀刻掉第一掩模层内的开口内的暴露的氮化硅; 通过所述第一掩蔽层注入所述第一导电类型的离子并进入所述衬底中，以产生所述通道停止并去除所述第一掩蔽层; 生长二氧化硅层，使得通道停止被蚀刻掉的部分中最厚的场二氧化硅层跨越; 图案化具有与所述通道停止件相邻的开口的第二掩蔽层，其尺寸基本上等于第二导电类型的随后注入的横向溢流漏极的尺寸; 蚀刻掉在第二掩模层中的开口内的暴露的氮化硅; 植入用于形成横向溢流漏斗的第二导电类型并去除任何剩余的掩模层; 并且生长二氧化硅层，使得跨越横向溢流漏斗形成更厚的二氧化硅，并且跨越通道停止的最厚的二氧化硅层形成。

10. 发明授权

US09000500B2 Image sensor with doped transfer gate 有权
标题翻译：具有掺杂传输门的图像传感器
公开(公告)号：US09000500B2
公开(公告)日：2015-04-07
申请号：US12942517
申请日：2010-11-09
申请人： Hung Q. Doan , Eric G. Stevens
发明人： Hung Q. Doan , Eric G. Stevens
IPC分类号： H01L31/113 , H01L27/146
CPC分类号： H01L27/14689 , H01L27/14603 , H01L27/14609 , H01L27/14612 , H01L27/14806
摘要： An image sensor includes an array of pixels, with at least one pixel including a photodetector formed in a substrate layer and a transfer gate disposed adjacent to the photodetector. The substrate layer further includes multiple charge-to-voltage conversion regions. A single photodetector can transfer collected charge to a single charge-to-voltage conversion region, or alternatively multiple photodetectors can transfer collected charge to a common charge-to-voltage conversion region shared by the photodetectors. An implant region formed when dopants are implanted into the substrate layer to form source/drain implant regions is disposed in only a portion of each transfer gate while each charge-to-voltage conversion region is substantially devoid of the implant region.
摘要翻译：图像传感器包括像素阵列，其中至少一个像素包括形成在基底层中的光电检测器和邻近光电检测器设置的传输栅极。衬底层还包括多个电荷 - 电压转换区域。单个光电检测器可以将收集的电荷转移到单个电荷至电压转换区域，或者多个光电检测器可以将收集的电荷转移到由光电检测器共享的公共电荷 - 电压转换区域。当掺杂剂注入到衬底层中以形成源极/漏极注入区域时形成的注入区域仅设置在每个传输栅极的一部分中，而每个电荷 - 电压转换区域基本上没有植入区域。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式