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1. 发明授权

US07842318B2 Use of a potent product extracted from rhizomes of Zingiber officinale in treating a disease associated with Helicobacter pylori 有权
标题翻译：使用从姜黄根茎提取的有效产品治疗与幽门螺杆菌相关的疾病
公开(公告)号：US07842318B2
公开(公告)日：2010-11-30
申请号：US11907854
申请日：2007-10-18
申请人： Feng-Nien Ko , Mo-Chi Cheng , Cheng-Ko Liu , Jen-Wei Chen , Fen Chen , Chao-Chi Yei
发明人： Feng-Nien Ko , Mo-Chi Cheng , Cheng-Ko Liu , Jen-Wei Chen , Fen Chen , Chao-Chi Yei
IPC分类号： A61K36/9068
CPC分类号： A61K36/9068
摘要： The present invention discloses a new use of a potent product extracted from rhizomes of Zingiber officinale in treating a disease associated with Helicobacter pylori such as gastritis, gastric ulcer or duodenal ulcer in a patient. The potent product is prepared by a process including the steps of a) preparing a crude extract from rhizomes of Zingiber officinale, said crude extract comprising 6-gingerol and 6-shogaol; b) introducing the crude extract to a reverse phase chromatography column, and eluting the column with a first eluent having a polarity lower than water to obtain a first potent fraction or a second eluent having a polarity lower than that of the first eluent to obtain a second potent fraction. Preferably, the second potent fraction is substantially free of both 6-gingerol and 6-shogaol.
摘要翻译：本发明公开了一种从姜黄根提取的有效产品在治疗与幽门螺杆菌相关的疾病如胃炎，胃溃疡或十二指肠溃疡中的新用途。所述有效产物通过以下步骤制备，所述方法包括以下步骤：a）从姜黄根茎制备粗提取物，所述粗提物包含6-姜醇和6-shogaol; b）将粗提取物引入反相层析柱，并用极性低于水的第一洗脱液洗脱柱，以获得极性低于第一洗脱液的第一有效级分或第二洗脱液，从而获得第二有效分数。优选地，第二有效级分基本上不含6-姜醇和6-shogaol。

2. 发明申请

US20090104293A1 Use of a potent product extracted from rhizomes of Zingiber officinale in treating a disease associated with Helicobacter pylori 有权
标题翻译：使用从姜黄根茎提取的有效产品治疗与幽门螺杆菌相关的疾病
公开(公告)号：US20090104293A1
公开(公告)日：2009-04-23
申请号：US11907854
申请日：2007-10-18
申请人： Feng-Nien Ko , Mo-Chi Cheng , Cheng-Ko Liu , Jen-Wei Chen , Fen Chen , Chao-Chi Yei
发明人： Feng-Nien Ko , Mo-Chi Cheng , Cheng-Ko Liu , Jen-Wei Chen , Fen Chen , Chao-Chi Yei
IPC分类号： A61K36/9068 , A61P43/00
CPC分类号： A61K36/9068
摘要： The present invention discloses a new use of a potent product extracted from rhizomes of Zingiber officinale in treating a disease associated with Helicobacter pylori such as gastritis, gastric ulcer or duodenal ulcer in a patient. The potent product is prepared by a process including the steps of a) preparing a crude extract from rhizomes of Zingiber officinale, said crude extract comprising 6-gingerol and 6-shogaol; b) introducing the crude extract to a reverse phase chromatography column, and eluting the column with a first eluent having a polarity lower than water to obtain a first potent fraction or a second eluent having a polarity lower than that of the first eluent to obtain a second potent fraction. Preferably, the second potent fraction is substantially free of both 6-gingerol and 6-shogaol.
摘要翻译：本发明公开了一种从姜黄根提取的有效产品在治疗与幽门螺杆菌相关的疾病如胃炎，胃溃疡或十二指肠溃疡中的新用途。所述有效产物通过以下步骤制备，所述方法包括以下步骤：a）从姜黄根茎制备粗提取物，所述粗提物包含6-姜醇和6-shogaol; b）将粗提取物引入反相层析柱，并用极性低于水的第一洗脱液洗脱柱，以获得极性低于第一洗脱液的第一有效级分或第二洗脱液，从而获得第二有效分数。优选地，第二有效级分基本上不含6-姜醇和6-shogaol。

3. 发明授权

US08470379B2 Use of a potent product extracted from rhizomes of zingiber officinale in treating a disease associated with Helicobacter pylori 有权
标题翻译：使用从姜黄根茎提取的有效产品治疗与幽门螺杆菌相关的疾病
公开(公告)号：US08470379B2
公开(公告)日：2013-06-25
申请号：US12911143
申请日：2010-10-25
申请人： Feng-Nien Ko , Mo-Chi Cheng , Cheng-Ko Liu , Jen-Wei Chen , Fen Chen , Chao-Chi Yei
发明人： Feng-Nien Ko , Mo-Chi Cheng , Cheng-Ko Liu , Jen-Wei Chen , Fen Chen , Chao-Chi Yei
IPC分类号： A61K36/9068
CPC分类号： A61K36/9068
摘要： A new use of a potent product extracted from rhizomes of Zingiber officinale in treating a disease associated with Helicobacter pylori such as gastritis, gastric ulcer or duodenal ulcer in a patient. The potent product is prepared by a process including the steps of a) preparing a crude extract from rhizomes of Zingiber officinale, said crude extract comprising 6-gingerol and 6-shogaol; b) introducing the crude extract to a normal phase chromatography column, and eluting the column with a first eluent having a polarity lower than that of a mixture of n-hexane and ethyl acetate in a weight ratio of 6:4 to obtain a potent fraction. Preferably, the potent fraction is substantially free of both 6-gingerol and 6-shogaol.
摘要翻译：从姜黄根茎提取的有效产品的新用途，用于治疗与幽门螺杆菌相关的疾病，如胃炎，胃溃疡或十二指肠溃疡。所述有效产物通过以下步骤制备，所述方法包括以下步骤：a）从姜黄根茎制备粗提取物，所述粗提物包含6-姜醇和6-shogaol; b）将粗提取物引入正相色谱柱，并用具有极性低于正己烷和乙酸乙酯的混合物的第一洗脱液以6:4的重量比洗脱柱，以获得有效分数。优选地，有效部分基本上不含6-姜醇和6-硫醇。

4. 发明授权

US08917104B2 Analyzing EM performance during IC manufacturing 有权
标题翻译：分析IC制造过程中的EM性能
公开(公告)号：US08917104B2
公开(公告)日：2014-12-23
申请号：US13222306
申请日：2011-08-31
申请人： Fen Chen , Roger A. Dufresne , Kai D. Feng , Richard J. St-Pierre
发明人： Fen Chen , Roger A. Dufresne , Kai D. Feng , Richard J. St-Pierre
IPC分类号： G01R31/3187 , G01R31/28
CPC分类号： G01R31/2858
摘要： A testing structure, system and method for monitoring electro-migration (EM) performance. A system is described that includes an array of testing structures, wherein each testing structure includes: an EM resistor having four point resistive measurement, wherein a first and second terminals provide current input and a third and fourth terminals provide a voltage measurement; a first transistor coupled to a first terminal of the EM resistor for supplying a test current; the voltage measurement obtained from a pair of switching transistors whose gates are controlled by a selection switch and whose drains are utilized to provide a voltage measurement across the third and fourth terminals. Also included is a decoder for selectively activating the selection switch for one of the array of testing structures; and a pair of outputs for outputting the voltage measurement of a selected testing structure.
摘要翻译：用于监测电迁移（EM）性能的测试结构，系统和方法。描述了包括测试结构阵列的系统，其中每个测试结构包括：具有四点电阻测量的EM电阻器，其中第一和第二端子提供电流输入，第三和第四端子提供电压测量; 耦合到所述EM电阻器的第一端子以提供测试电流的第一晶体管; 由一对开关晶体管获得的电压测量，其栅极由选择开关控制，并且其漏极用于在第三和第四端子处提供电压测量。还包括用于选择性地激活测试结构阵列之一的选择开关的解码器; 以及用于输出所选择的测试结构的电压测量的一对输出。

5. 发明授权

US08754655B2 Test structure, method and circuit for simultaneously testing time dependent dielectric breakdown and electromigration or stress migration 失效
标题翻译：测试结构，方法和电路，用于同时测试时间依赖介电击穿和电迁移或应力迁移
公开(公告)号：US08754655B2
公开(公告)日：2014-06-17
申请号：US13207485
申请日：2011-08-11
申请人： David G. Brochu, Jr. , Fen Chen , Roger A. Dufresne , Travis S. Merrill , Michael A. Shinosky
发明人： David G. Brochu, Jr. , Fen Chen , Roger A. Dufresne , Travis S. Merrill , Michael A. Shinosky
IPC分类号： G01R31/02
CPC分类号： G01R31/2858
摘要： Test structures for simultaneously testing for electromigration or stress migration fails and time dependent dielectric breakdown fails in integrated circuits, test circuits using four test structures arranged as a bridge balance circuit and methods of testing using the test circuits. The electromigration or stress migration portions of the test structures include via chains of wire segments connected in series by electrically conductive vias, the wire segments formed in at least two adjacent wiring levels of an integrated circuit. The time dependent dielectric breakdown portions of the test structures include digitized wire structures in one of the at least two adjacent wiring levels adjacent to a less than whole portion of the wire segments in the same wiring level as the digitized wire structures.
摘要翻译：用于同时测试电迁移或应力迁移的测试结构在集成电路中的时间依赖介质击穿失效，使用布置为桥接平衡电路的四个测试结构的测试电路和使用测试电路的测试方法。测试结构的电迁移或应力迁移部分包括通过导电通孔串联连接的导线段的通孔链，形成在集成电路的至少两个相邻布线层中的线段。测试结构的时间依赖介质击穿部分包括在与数字化的线结构相同的布线级别中与所述线段的少于整个部分相邻的所述至少两个相邻布线层之一中的数字化线结构。

6. 发明申请

US20120299188A1 WIRING STRUCTURE AND METHOD OF FORMING THE STRUCTURE 有权
标题翻译：导线结构及形成结构的方法
公开(公告)号：US20120299188A1
公开(公告)日：2012-11-29
申请号：US13114079
申请日：2011-05-24
申请人： Fen Chen , Jeffrey P. Gambino , Anthony K. Stamper , Timothy D. Sullivan
发明人： Fen Chen , Jeffrey P. Gambino , Anthony K. Stamper , Timothy D. Sullivan
IPC分类号： H01L23/485 , H01L21/768
CPC分类号： H01L21/76816 , H01L21/76843 , H01L23/5283 , H01L23/53223 , H01L23/53238 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： Disclosed is a wiring structure and method of forming the structure with a conductive diffusion barrier layer having a thick upper portion and thin lower portion. The thicker upper portion is located at the junction between the wiring structure and the adjacent dielectric materials. The thicker upper portion: (1) minimizes metal ion diffusion and, thereby TDDB; (2) allows a wire width to dielectric space width ratio that is optimal for low TDDB to be achieved at the top of the wiring structure; and (3) provides a greater surface area for via landing. The thinner lower portion: (1) allows a different wire width to dielectric space width ratio to be maintained in the rest of the wiring structure in order to balance other competing factors; (2) allows a larger cross-section of wire to reduce current density and, thereby reduce EM; and (3) avoids an increase in wiring structure resistivity.
摘要翻译：公开了一种具有导电扩散阻挡层的结构的布线结构和方法，所述导电扩散阻挡层具有较厚的上部和较薄的下部。较厚的上部位于布线结构和相邻电介质材料之间的接合处。较厚的上部：（1）最小化金属离子扩散，从而使TDDB; （2）允许在布线结构的顶部实现对于低TDDB最佳的电线宽度与电介质空间宽度比; 和（3）为通孔着陆提供更大的表面积。较薄的下部：（1）允许在布线结构的其余部分中保持不同的导线宽度与电介质空间宽度比，以平衡其他竞争因素; （2）允许更大的导线截面减小电流密度，从而减少EM; 和（3）避免了布线结构电阻率的增加。

7. 发明申请

US20120218030A1 METHOD FOR MANAGING CIRCUIT RELIABILITY 失效
标题翻译：管理电路可靠性的方法
公开(公告)号：US20120218030A1
公开(公告)日：2012-08-30
申请号：US13034758
申请日：2011-02-25
申请人： Fen Chen , Kai D. Feng , Zhong-Xiang He
发明人： Fen Chen , Kai D. Feng , Zhong-Xiang He
IPC分类号： H03K19/003
CPC分类号： H03K19/00307
摘要： Managing reliability of a circuit that includes a plurality of duplicate components, with less than all of the components being active at any time during circuit operation, where reliability is managed by operating, by the circuit, with a first set of components that includes a predefined number of components; selecting, without altering circuit performance and in accordance with a circuit reliability protocol, a second set of components with which to operate, including activating an inactive component and deactivating an active component of the first set of components; and operating, by the circuit, with the second set of components.
摘要翻译：管理包括多个重复部件的电路的可靠性，其中小于所有组件在电路操作期间的任何时间处于活动状态，其中可靠性由电路通过第一组组件来管理，该组件包括预定义的组件数量; 根据电路可靠性协议选择不改变电路性能的第二组组件，包括激活非活动组件和去激活第一组组件的活动组件; 并通过电路与第二组元件一起操作。

8. 发明授权

US08018017B2 Thermo-mechanical cleavable structure 有权
标题翻译：热机械可切割结构
公开(公告)号：US08018017B2
公开(公告)日：2011-09-13
申请号：US10905905
申请日：2005-01-26
申请人： Fen Chen , Cathryn J. Christiansen , Richard S. Kontra , Tom C. Lee , Alvin W. Strong , Timothy D. Sullivan , Joseph E. Therrien
发明人： Fen Chen , Cathryn J. Christiansen , Richard S. Kontra , Tom C. Lee , Alvin W. Strong , Timothy D. Sullivan , Joseph E. Therrien
IPC分类号： H01L31/058
CPC分类号： H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： A thermo-mechanical cleavable structure is provided and may be used as a programmable fuse for integrated circuits. As applied to a programmable fuse, the thermo-mechanical cleavable structure includes an electrically conductive cleavable layer adjacent to a thermo-mechanical stressor. As electricity is passed through the cleavable layer, the cleavable layer and the thermo-mechanical stressor are heated and gas evolves from the thermo-mechanical stressor. The gas locally insulates the thermo-mechanical stressor, causing local melting adjacent to the bubbles in the thermo-mechanical stressor and the cleavable structure forming cleaving sites. The melting also interrupts the current flow through the cleavable structure so the cleavable structure cools and contracts. The thermo-mechanical stressor also contracts due to a phase change caused by the evolution of gas therefrom. As the thermo-mechanical cleavable structure cools, the cleaving sites expand causing gaps to be permanently formed therein.
摘要翻译：提供了一种热机械可切割结构，可用作集成电路的可编程保险丝。如应用于可编程保险丝，热机械可切割结构包括与热机械应力源相邻的导电可切割层。当电通过可切割层时，可切割层和热机械应力器被加热并且气体从热机械应力源逸出。气体将热机械应力局部绝缘，导致邻近热机械应力的气泡局部熔化，形成裂开位置的可切割结构。熔化还中断当前通过可切割结构的流动，因此可切割结构冷却和收缩。热机械应力还由于由其产生的气体引起的相变而收缩。当热机械可裂解结构冷却时，裂解位置膨胀，导致间隙永久形成。

9. 发明授权

US07998828B2 Method of forming metal ion transistor 失效
标题翻译：形成金属离子晶体管的方法
公开(公告)号：US07998828B2
公开(公告)日：2011-08-16
申请号：US12725817
申请日：2010-03-17
申请人： Fen Chen , Armin Fischer
发明人： Fen Chen , Armin Fischer
IPC分类号： H01L21/34 , H01L29/12 , H01L27/148 , H01L51/40 , H01L21/335 , H01L21/8232 , H01L21/339 , H01L21/00 , H01L21/84 , H01L21/76 , H01L21/20 , H01L21/36
CPC分类号： H01L45/00
摘要： A method of forming a metal ion transistor comprises forming a first electrode in a first isolation layer; forming a second isolation layer over the first isolation layer; forming a first cell region of a low dielectric constant (low-k) dielectric over the first electrode in the second isolation layer, the first cell region isolated from the second isolation layer; forming a cap layer over the second isolation layer and the first cell region, at least thinning the cap layer over the first cell region; depositing a layer of the low-k dielectric over the second isolation layer and the first cell region; forming metal ions in the low-k dielectric layer; patterning the low-k dielectric layer to form a second cell region; sealing the second cell region using a liner; and forming a second electrode contacting the second cell region and a third electrode contacting the second cell region.
摘要翻译：一种形成金属离子晶体管的方法包括在第一隔离层中形成第一电极; 在所述第一隔离层上形成第二隔离层; 在所述第二隔离层中的所述第一电极上形成低介电常数（低k）电介质的第一电池区，所述第一电池区与所述第二隔离层隔离; 在所述第二隔离层和所述第一单元区域上形成盖层，至少使所述盖层在所述第一单元区域上变薄; 在所述第二隔离层和所述第一单元区域上沉积所述低k电介质层; 在低k电介质层中形成金属离子; 图案化低k电介质层以形成第二电池区; 使用衬垫密封第二电池区域; 以及形成与第二单元区域接触的第二电极和与第二单元区域接触的第三电极。

10. 发明授权

US07795679B2 Device structures with a self-aligned damage layer and methods for forming such device structures 失效
标题翻译：具有自对准损伤层的装置结构和用于形成这种装置结构的方法
公开(公告)号：US07795679B2
公开(公告)日：2010-09-14
申请号：US12178766
申请日：2008-07-24
申请人： Ethan H. Cannon , Fen Chen
发明人： Ethan H. Cannon , Fen Chen
IPC分类号： H01L31/0392 , H01L21/8238 , H01L21/336
CPC分类号： H01L29/0653 , H01L21/26506 , H01L29/6659 , H01L29/66659 , H01L29/7842 , H01L29/7848
摘要： Device structures with a self-aligned damage layer and methods of forming such device structures. The device structure first and second doped regions of a first conductivity type defined in the semiconductor material of a substrate. A third doped region of opposite conductivity type laterally separates the first doped region from the second doped region. A gate structure is disposed on a top surface of the substrate and has a vertically stacked relationship with the third doped region. A first crystalline damage layer is defined within the semiconductor material of the substrate. The first crystalline damage layer has a first plurality of voids surrounded by the semiconductor material of the substrate. The first doped region is disposed vertically between the first crystalline damage layer and the top surface of the substrate. The first crystalline damage layer does not extend laterally into the third doped region.
摘要翻译：具有自对准损伤层的装置结构和形成这种装置结构的方法。该器件结构是限定在衬底的半导体材料中的第一导电类型的第一和第二掺杂区域。相反导电类型的第三掺杂区域将第一掺杂区域与第二掺杂区域横向分离。栅极结构设置在衬底的顶表面上，并且与第三掺杂区域具有垂直堆叠的关系。第一晶体损伤层被限定在衬底的半导体材料内。第一晶体损伤层具有由衬底的半导体材料包围的第一多个空隙。第一掺杂区域垂直地设置在第一晶体损伤层和衬底的顶表面之间。第一晶体损伤层不横向延伸到第三掺杂区域。

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