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    • 1. 发明授权
    • Tomographic atom probe comprising an electro-optical generator of high-voltage electrical pulses
    • 断层原子探针包括高电压电脉冲的电光发生器
    • US08276210B2
    • 2012-09-25
    • US13130520
    • 2009-10-13
    • François VurpillotAlain Bostel
    • François VurpillotAlain Bostel
    • G01Q60/00
    • H03K3/42H01J49/168H03K3/537
    • A tomographic atom probe uses electrical pulses applied to an electrode in order to carry out evaporation of the sample being analyzed. In order to produce these electrical pulses, the tomographic atom probe comprises a high-voltage generator connected to an electrode by an electrical connection comprising a chip of semiconductor material. The probe also comprises a light source which can be controlled in order to generate light pulses which are applied to the semiconductor chip. Throughout the illumination, the chip is rendered conductive, which puts the high-voltage generator and the electrode in electrical contact so that a potential step is applied to the latter. The probe also comprises means for applying a voltage step of opposite amplitude to the previous step at the end of a time interval Δt0, so that the electrode finally receives a voltage pulse of duration Δt0.
    • 断层原子探针使用施加到电极的电脉冲,以便进行正在分析的样品的蒸发。 为了产生这些电脉冲,断层原子探针包括通过包括半导体材料芯片的电连接器连接到电极的高压发生器。 探头还包括可以被控制以产生施加到半导体芯片的光脉冲的光源。 在整个照明过程中,芯片导通,使高电压发生器和电极电接触,从而对其施加电势。 该探头还包括用于在时间间隔&Dgr; t0结束时向前一步骤施加相反幅度的电压步骤的装置,使得电极最终接收持续时间&Dgr; t0的电压脉冲。
    • 2. 发明申请
    • Tomographic Atom Probe Comprising an Electro-Optical Generator of High-Voltage Electrical Pulses
    • 包含高压电脉冲电光发生器的层析原子探针
    • US20110260046A1
    • 2011-10-27
    • US13130520
    • 2009-10-13
    • François VurpillotAlain Bostel
    • François VurpillotAlain Bostel
    • H01J49/00G01N27/64
    • H03K3/42H01J49/168H03K3/537
    • A tomographic atom probe uses electrical pulses applied to an electrode in order to carry out evaporation of the sample being analyzed. In order to produce these electrical pulses, the tomographic atom probe comprises a high-voltage generator connected to an electrode by an electrical connection comprising a chip of semiconductor material. The probe also comprises a light source which can be controlled in order to generate light pulses which are applied to the semiconductor chip. Throughout the illumination, the chip is rendered conductive, which puts the high-voltage generator and the electrode in electrical contact so that a potential step is applied to the latter. The probe also comprises means for applying a voltage step of opposite amplitude to the previous step at the end of a time interval Δt0, so that the electrode finally receives a voltage pulse of duration Δt0.
    • 断层原子探针使用施加到电极的电脉冲,以便进行正在分析的样品的蒸发。 为了产生这些电脉冲,断层原子探针包括通过包括半导体材料芯片的电连接器连接到电极的高压发生器。 探头还包括可以被控制以产生施加到半导体芯片的光脉冲的光源。 在整个照明过程中,芯片导通,使高电压发生器和电极电接触,从而对其施加电势。 该探头还包括用于在时间间隔&Dgr; t0结束时向前一步骤施加相反幅度的电压步骤的装置,使得电极最终接收持续时间&Dgr; t0的电压脉冲。
    • 3. 发明申请
    • High Resolution Wide Angle Tomographic Probe
    • 高分辨率广角摄影探头
    • US20100223698A1
    • 2010-09-02
    • US12682700
    • 2008-10-08
    • Alain BostelMikhail YavorLudovic RenaudBernard Deconihout
    • Alain BostelMikhail YavorLudovic RenaudBernard Deconihout
    • G01Q60/24
    • H01J49/40H01J49/0004
    • The present invention concerns the enhancing of the mass resolution of wide angle tomographic atom probes. The invention consists of an atom probe also comprising a sample-holding device and a detector which are separated from one another by a distance L and enclosed in a chamber, an “Einzel” type electrostatic lens consisting of three electrodes arranged inside the chamber between the sample and the detector, to which electrical potentials are applied so as to form an electrical field that strongly focuses the beam of ions emitted by the sample under test when the probe is operating. According to the invention, the geometry of the electrodes is defined precisely so as to greatly limit the effects of the spherical aberration that affects the “Einzel” lens on the beam of ions, said spherical aberration being clearly sensitive when the lens is greatly polarized. The invention applies more particularly to the atom probes known as 3D atom probes.
    • 本发明涉及广角断层成像原子探针的质量分辨率的提高。 本发明还包括原子探针,其还包括彼此分离距离L并封闭在腔室中的样品保持装置和检测器,“三角形”型静电透镜,由三个电极组成,该三个电极布置在室内 样品和检测器,施加电位以形成电场,当探头工作时,电场强烈地聚焦待测样品发射的离子束。 根据本发明,电极的几何形状被精确限定,以便极大地限制影响“Einzel”透镜对离子束的球面像差的影响,当透镜极大地偏振时,所述球面像差是明显敏感的。 本发明更具体地应用于称为3D原子探针的原子探针。
    • 5. 发明授权
    • High resolution wide angle tomographic probe
    • 高分辨率广角断层摄影探头
    • US08074292B2
    • 2011-12-06
    • US12682700
    • 2008-10-08
    • Alain BostelMikhail YavorLudovic RenaudBernard Deconihout
    • Alain BostelMikhail YavorLudovic RenaudBernard Deconihout
    • G01Q60/00
    • H01J49/40H01J49/0004
    • The present invention concerns the enhancing of the mass resolution of wide angle tomographic atom probes. The invention consists of an atom probe also comprising a sample-holding device and a detector which are separated from one another by a distance L and enclosed in a chamber, an “Einzel” type electrostatic lens consisting of three electrodes arranged inside the chamber between the sample and the detector, to which electrical potentials are applied so as to form an electrical field that strongly focuses the beam of ions emitted by the sample under test when the probe is operating. According to the invention, the geometry of the electrodes is defined precisely so as to greatly limit the effects of the spherical aberration that affects the “Einzel” lens on the beam of ions, said spherical aberration being clearly sensitive when the lens is greatly polarized. The invention applies more particularly to the atom probes known as 3D atom probes.
    • 本发明涉及广角断层成像原子探针的质量分辨率的提高。 本发明还包括原子探针,其还包括彼此分离距离L并封闭在腔室中的样品保持装置和检测器,“三角形”型静电透镜,由三个电极组成,该三个电极布置在室内 样品和检测器,施加电位以形成电场,当探头工作时,电场强烈地聚焦待测样品发射的离子束。 根据本发明,精确地限定电极的几何形状,以便极大地限制影响“Einzel”透镜的离子束的球面像差的影响,当透镜极大地偏振时,所述球面像差明显敏感。 本发明更具体地应用于称为3D原子探针的原子探针。