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    • 8. 发明授权
    • Gold micromask for roughening to promote light extraction in an LED
    • 用于粗化以促进LED中的光提取的金微掩模
    • US08759127B2
    • 2014-06-24
    • US13359428
    • 2012-01-26
    • Syn-Yem Hu
    • Syn-Yem Hu
    • H01L33/22H01L21/3065
    • H01L33/22H01L33/44
    • Gold is used as a micromask to roughen a gallium nitride (GaN) surface in an LED device. In one example, a mesh of ITO (Indium Tin Oxide) is formed on a GaN layer. The mesh has holes that extend down to the GaN. A layer of silicon dioxide is deposited so that it covers the GaN at the bottoms of the holes. A layer of gold is formed over the oxide. A thermal treatment causes the gold to ball up into small gold features. These gold features are used as a micromask in a subsequent etching step. Areas of the bottoms of the holes that are not covered by a gold feature are etched. Etching occurs through the oxide and down into the GaN. The roughening process involves no silver, and involves no harsh cleaning solvents or processes that might otherwise have been used were the micromask made of silver.
    • 金被用作微阵列以粗糙化LED器件中的氮化镓(GaN)表面。 在一个实例中,在GaN层上形成ITO(氧化铟锡)网。 网格具有向下延伸到GaN的孔。 沉积一层二氧化硅,使其覆盖在孔的底部的GaN。 在氧化物上形成一层金。 热处理使黄金成为小金的特征。 这些金特征在随后的蚀刻步骤中用作微卷积。 未被金色特征覆盖的孔的底部区域被蚀刻。 蚀刻通过氧化物发生并进入GaN。 粗糙化过程不涉及银,并且不涉及苛刻的清洁溶剂或其它可能被使用的工艺是由银制成的微型掩模。
    • 9. 发明申请
    • Gold Micromask for Roughening to Promote Light Extraction in an LED
    • 用于粗化以提高LED中的光提取的金微型掩模
    • US20130049006A1
    • 2013-02-28
    • US13359428
    • 2012-01-26
    • Syn-Yem Hu
    • Syn-Yem Hu
    • H01L33/02H01L33/62H01L33/22
    • H01L33/22H01L33/44
    • Gold is used as a micromask to roughen a gallium nitride (GaN) surface in an LED device. In one example, a mesh of ITO (Indium Tin Oxide) is formed on a GaN layer. The mesh has holes that extend down to the GaN. A layer of silicon dioxide is deposited so that it covers the GaN at the bottoms of the holes. A layer of gold is formed over the oxide. A thermal treatment causes the gold to ball up into small gold features. These gold features are used as a micromask in a subsequent etching step. Areas of the bottoms of the holes that are not covered by a gold feature are etched. Etching occurs through the oxide and down into the GaN. The roughening process involves no silver, and involves no harsh cleaning solvents or processes that might otherwise have been used were the micromask made of silver.
    • 金被用作微阵列以粗糙化LED器件中的氮化镓(GaN)表面。 在一个实例中,在GaN层上形成ITO(氧化铟锡)网。 网格具有向下延伸到GaN的孔。 沉积一层二氧化硅,使其覆盖在孔的底部的GaN。 在氧化物上形成一层金。 热处理使黄金成为小金的特征。 这些金特征在随后的蚀刻步骤中用作微卷积。 未被金色特征覆盖的孔的底部区域被蚀刻。 蚀刻通过氧化物发生并进入GaN。 粗糙化过程不涉及银,并且不涉及苛刻的清洁溶剂或其它可能被使用的工艺是由银制成的微型掩模。
    • 10. 发明申请
    • Photodiode And Method Of Fabrication
    • 光电二极管及其制作方法
    • US20090242934A1
    • 2009-10-01
    • US12060342
    • 2008-04-01
    • Syn-Yem Hu
    • Syn-Yem Hu
    • H01L31/0304H01L31/0232
    • H01L31/1844H01L31/1075Y02E10/544
    • The present invention provides a highly reliable photodiode, as well as a simple method of fabricating such a photodiode. During fabrication of the photodiode, a grading layer is epitaxially grown on a top surface of an absorption layer, and a blocking layer, for inhibiting current flow, is epitaxially grown on a top surface of the grading layer. The blocking layer is then etched to expose a window region of the top surface of the grading layer. Thus, the etched blocking layer defines an active region of the absorption layer. A window layer is epitaxially regrown on a top surface of the blocking layer and on the window region of the top surface of the grading layer, and is then etched to form a window mesa.
    • 本发明提供了高度可靠的光电二极管,以及制造这种光电二极管的简单方法。 在制造光电二极管期间,在吸收层的顶表面上外延生长分级层,并且在分级层的顶表面上外延生长用于抑制电流流动的阻挡层。 然后蚀刻阻挡层以暴露分级层的顶表面的窗口区域。 因此,蚀刻阻挡层限定吸收层的有源区。 将窗口层外延再生长在阻挡层的顶表面和分级层的顶表面的窗口区域上,然后被蚀刻以形成窗台。