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    • 3. 发明申请
    • METHOD FOR PRODUCING A GATE ELECTRODE STRUCTURE
    • 生产门电极结构的方法
    • US20120083081A1
    • 2012-04-05
    • US12894141
    • 2010-09-30
    • Hans WeberStefan GamerithRoman KnoeflerKurt SorschagAnton Mauder
    • Hans WeberStefan GamerithRoman KnoeflerKurt SorschagAnton Mauder
    • H01L21/336
    • H01L29/7813H01L29/0653H01L29/1095H01L29/407H01L29/4236H01L29/4238H01L29/66734H01L29/7803
    • A transistor with a gate electrode structure is produced by providing a semiconductor body with a first surface, and with a first sacrificial layer extending in a vertical direction of the semiconductor body from the first surface. A first trench extending from the first surface into the semiconductor body is formed by removing the sacrificial layer in a section adjacent the first surface. A second trench is formed by isotropically etching the semiconductor body in the first trench. A third trench is formed below the second trench by removing at least a part of the first sacrificial layer below the second trench. A dielectric layer is formed which at least covers sidewalls of the third trench and which only covers sidewalls of the second trench. A gate electrode is formed on the dielectric layer in the second trench. The gate electrode and dielectric layer in the second trench form the gate electrode structure.
    • 具有栅电极结构的晶体管通过提供具有第一表面的半导体本体和从第一表面沿半导体本体的垂直方向延伸的第一牺牲层来制造。 通过在与第一表面相邻的部分中去除牺牲层来形成从第一表面延伸到半导体本体的第一沟槽。 通过在第一沟槽中各向同性蚀刻半导体本体来形成第二沟槽。 通过去除第二沟槽下方的第一牺牲层的至少一部分,在第二沟槽下方形成第三沟槽。 形成介电层,其至少覆盖第三沟槽的侧壁并仅覆盖第二沟槽的侧壁。 栅电极形成在第二沟槽中的电介质层上。 第二沟槽中的栅电极和电介质层形成栅电极结构。
    • 4. 发明授权
    • Method for producing a gate electrode structure
    • 栅电极结构的制造方法
    • US08288230B2
    • 2012-10-16
    • US12894141
    • 2010-09-30
    • Hans WeberStefan GamerithRoman KnoeflerKurt SorschagAnton Mauder
    • Hans WeberStefan GamerithRoman KnoeflerKurt SorschagAnton Mauder
    • H01L21/336
    • H01L29/7813H01L29/0653H01L29/1095H01L29/407H01L29/4236H01L29/4238H01L29/66734H01L29/7803
    • A transistor with a gate electrode structure is produced by providing a semiconductor body with a first surface, and with a first sacrificial layer extending in a vertical direction of the semiconductor body from the first surface. A first trench extending from the first surface into the semiconductor body is formed by removing the sacrificial layer in a section adjacent the first surface. A second trench is formed by isotropically etching the semiconductor body in the first trench. A third trench is formed below the second trench by removing at least a part of the first sacrificial layer below the second trench. A dielectric layer is formed which at least covers sidewalls of the third trench and which only covers sidewalls of the second trench. A gate electrode is formed on the dielectric layer in the second trench. The gate electrode and dielectric layer in the second trench form the gate electrode structure.
    • 具有栅电极结构的晶体管通过提供具有第一表面的半导体本体和从第一表面沿半导体本体的垂直方向延伸的第一牺牲层来制造。 通过在与第一表面相邻的部分中去除牺牲层来形成从第一表面延伸到半导体本体的第一沟槽。 通过在第一沟槽中各向同性蚀刻半导体本体来形成第二沟槽。 通过去除第二沟槽下方的第一牺牲层的至少一部分,在第二沟槽下方形成第三沟槽。 形成介电层,其至少覆盖第三沟槽的侧壁并仅覆盖第二沟槽的侧壁。 栅电极形成在第二沟槽中的电介质层上。 第二沟槽中的栅电极和电介质层形成栅电极结构。