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1. 发明申请

US20220016821A1 APPARATUS AND METHOD FOR IMPROVING AT LEAST ONE PHYSICAL PROPERTY OF AN EXTRUDED PLASTIC MATERIAL 有权
公开(公告)号：US20220016821A1
公开(公告)日：2022-01-20
申请号：US17373988
申请日：2021-07-13
申请人： Hans Weber Maschinenfabrik GmbH
发明人： Johannes Weber
IPC分类号： B29C48/91 , B29C48/06 , B29C48/88 , B29C48/00
摘要： An apparatus and a method for improving at least one physical property of an extruded plastic material comprise an extruder for extruding the plastic material as well as a laser unit with at least one laser for irradiating the extruded plastic material with laser light. Further, the apparatus has at least one laser light-reflecting reflector arranged at a distance to the extruded plastic material. The laser and the reflector are arranged and designed such that the laser light emitted by the laser is incident on the reflector through the extruded plastic material, the reflector reflects the incident laser light such that at least a part of the reflected laser light hits the extruded plastic material.

2. 发明授权

US09097777B2 Method of magnetic resonance imaging for the selection and recording of curved slices 有权
标题翻译：用于选择和记录弯曲切片的磁共振成像方法
公开(公告)号：US09097777B2
公开(公告)日：2015-08-04
申请号：US13443908
申请日：2012-04-11
申请人： Hans Weber , Maxim Zaitsev , Daniel Gallichan , Juergen Hennig
发明人： Hans Weber , Maxim Zaitsev , Daniel Gallichan , Juergen Hennig
IPC分类号： G01R33/483
CPC分类号： G01R33/4833 , G01R33/483 , G01R33/4835 , G01R33/4836
摘要： A method of MR imaging applies a magnetic field Bgrad1 having a spatially non-linear dependence to select a volume of at least one curved slice. The slice is described by its midsurface AM, a volume of the selected slice being made up of nν partial volumes in each of which gradients of at least one pair of remaining superimposed magnetic fields Bgradi (i>1) exhibit an angle dependence of 70° to 110° with respect to one another and with respect to the normal of the midsurface AM. At least one superimposed magnetic field of the respective pair exhibits a spatially non-linear dependence and combinations of these pairs are used for spatial encoding. In this way, curved surfaces can be mapped efficiently in high resolution and the method can be adapted to the slice shape.
摘要翻译： MR成像的方法应用具有空间非线性依赖性的磁场Bgrad1来选择至少一个弯曲切片的体积。切片由其中心面AM描述，所选切片的体积由n＆ngr组成; 至少一对剩余叠加磁场Bgradi（i> 1）的梯度中的每一个的部分体积相对于彼此表现出70°至110°的角度依赖性，并且相对于中空面AM的法线呈现角度依赖性。相应对的至少一个叠加的磁场表现出空间非线性相关性，并且这些对的组合用于空间编码。以这种方式，可以高分辨率地有效地映射曲面，并且该方法可以适应于切片形状。

3. 发明申请

US20150102702A1 THERMAL POWER CELL AND APPARATUS BASED THEREON 审中-公开
标题翻译：基于此的热电池及其设备
公开(公告)号：US20150102702A1
公开(公告)日：2015-04-16
申请号：US14399215
申请日：2012-05-08
申请人： Peter Jeney , Gustav Hans Weber
发明人： Peter Jeney , Gustav Hans Weber
IPC分类号： H01L37/02
CPC分类号： H01L37/02 , H01L37/025
摘要： Apparatus (100) comprising a device (10) with a first electrically conducting electrode (11), a second electrically conducting electrode (12), said electrodes (11, 12) being spaced apart, a pyro-electric material (13) to which said electrodes (11, 12) are attached/applied, at least one heat-exchanging structure (14) being thermally coupled to said pyro-electric material (13), said apparatus (100) further comprising an electric oscillator circuitry (20), said device (10) being electrically connectable to the electric oscillator circuitry (20) so as to provide an oscillation of said pyro-electric material (13).
摘要翻译：装置（100）包括具有第一导电电极（11）的装置（10），第二导电电极（12），所述电极（11,12）间隔开，热电材料（13）所述电极（11,12）被附接/施加，至少一个热耦合到所述热电材料（13）的热交换结构（14），所述设备（100）还包括电振荡器电路（20）所述装置（10）可电连接到电振荡器电路（20），以便提供所述热电材料（13）的振荡。

4. 发明授权

US08866253B2 Semiconductor arrangement with active drift zone 有权
标题翻译：具有主动漂移区的半导体装置
公开(公告)号：US08866253B2
公开(公告)日：2014-10-21
申请号：US13362038
申请日：2012-01-31
申请人： Rolf Weis , Gerald Deboy , Michael Treu , Armin Willmeroth , Hans Weber
发明人： Rolf Weis , Gerald Deboy , Michael Treu , Armin Willmeroth , Hans Weber
IPC分类号： H01L27/00
CPC分类号： H01L27/0207 , H01L21/84 , H01L21/845 , H01L27/06 , H01L27/0629 , H01L27/088 , H01L27/0886 , H01L27/1211 , H01L29/4236 , H01L29/78 , H03K17/063 , H03K17/102
摘要： A semiconductor device arrangement includes a first semiconductor device having a load path and a plurality of second semiconductor devices, each having a load path between a first and a second load terminal and a control terminal. The second semiconductor devices have their load paths connected in series and connected in series to the load path of the first semiconductor device. Each of the second semiconductor devices has its control terminal connected to the load terminal of one of the other second semiconductor devices, and one of the second semiconductor devices has its control terminal connected to one of the load terminals of the first semiconductor device. Each of the second semiconductor devices has at least one device characteristic. At least one device characteristic of at least one of the second semiconductor devices is different from the corresponding device characteristic of others of the second semiconductor devices.
摘要翻译：半导体器件布置包括具有负载路径的第一半导体器件和多个第二半导体器件，每个第二半导体器件具有在第一和第二负载端子与控制端子之间的负载路径。第二半导体器件的负载路径串联连接并与第一半导体器件的负载路径串联连接。每个第二半导体器件的控制端子连接到其它第二半导体器件之一的负载端子，并且其中一个第二半导体器件的控制端子连接到第一半导体器件的负载端子之一。每个第二半导体器件具有至少一个器件特性。第二半导体器件中的至少一个的至少一个器件特征与第二半导体器件中的其它器件的相应器件特性不同。

5. 发明授权

US08866221B2 Super junction semiconductor device comprising a cell area and an edge area 有权
标题翻译：超结半导体器件包括单元区域和边缘区域
公开(公告)号：US08866221B2
公开(公告)日：2014-10-21
申请号：US13539973
申请日：2012-07-02
申请人： Franz Hirler , Hans Weber , Hans-Joachim Schulze , Uwe Wahl
发明人： Franz Hirler , Hans Weber , Hans-Joachim Schulze , Uwe Wahl
IPC分类号： H01L29/66
CPC分类号： H01L29/66712 , H01L29/0634 , H01L29/0649 , H01L29/0653 , H01L29/0696 , H01L29/1095 , H01L29/161 , H01L29/167 , H01L29/408 , H01L29/7395 , H01L29/7811 , H01L29/8611
摘要： A drift layer of a super junction semiconductor device includes first portions of a first conductivity type and second portions of a second conductivity type opposite to the first conductivity type. The first and second portions are formed both in a cell area and in an edge area surrounding the cell area, wherein an on-state or forward current through the drift layer flows through the first portions in the cell area. At least one of the first and second portions other than the first portions in the cell area includes an auxiliary structure or contains auxiliary impurities to locally reduce the avalanche rate. Locally reducing the avalanche rate increases the total voltage blocking capability of the super junction semiconductor device.
摘要翻译：超结半导体器件的漂移层包括第一导电类型的第一部分和与第一导电类型相反的第二导电类型的第二部分。第一和第二部分在单元区域和围绕单元区域的边缘区域中形成，其中通过漂移层的导通状态或正向电流流过单元区域中的第一部分。电池区域中除了第一部分之外的第一和第二部分中的至少一个包括辅助结构或包含辅助杂质以局部降低雪崩率。本地降低雪崩率提高了超结半导体器件的总电压阻断能力。

6. 发明授权

US08399325B2 Method for producing an electrode structure 有权
标题翻译：电极结构体的制造方法
公开(公告)号：US08399325B2
公开(公告)日：2013-03-19
申请号：US13240308
申请日：2011-09-22
申请人： Hans Weber , Stefan Gamerith , Roman Knoefler , Kurt Sorschag , Anton Mauder
发明人： Hans Weber , Stefan Gamerith , Roman Knoefler , Kurt Sorschag , Anton Mauder
IPC分类号： H01L21/336
CPC分类号： H01L29/7813 , H01L29/0653 , H01L29/1095 , H01L29/407 , H01L29/4236 , H01L29/4238 , H01L29/66734 , H01L29/7803
摘要： A method for producing a semiconductor device with an electrode structure includes providing a semiconductor body with a first surface, and with a first sacrificial layer extending in a vertical direction of the semiconductor body from the first surface, and forming a first trench extending from the first surface into the semiconductor body. The first trench is formed at least by removing the sacrificial layer in a section adjacent to the first surface. The method further includes forming a second trench by isotropically etching the semiconductor body in the first trench, forming a dielectric layer which covers sidewalls of the second trench, and forming an electrode on the dielectric layer in the second trench, the electrode and the dielectric layer in the second trench forming the electrode structure.
摘要翻译：一种用于制造具有电极结构的半导体器件的方法，包括：提供具有第一表面的半导体本体，以及从所述第一表面沿着所述半导体本体的垂直方向延伸的第一牺牲层，以及形成从所述第一表面延伸的第一沟槽表面进入半导体体。至少通过在与第一表面相邻的部分中去除牺牲层来形成第一沟槽。该方法还包括通过在第一沟槽中各向同性蚀刻半导体本体来形成第二沟槽，形成覆盖第二沟槽侧壁的电介质层，以及在第二沟槽，电极和电介质层中的电介质层上形成电极在形成电极结构的第二沟槽中。

7. 发明申请

US20130005099A1 METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE INCLUDING A DIELECTRIC LAYER 有权
标题翻译：用于生产包括介电层的半导体器件的方法
公开(公告)号：US20130005099A1
公开(公告)日：2013-01-03
申请号：US13537374
申请日：2012-06-29
申请人： Hans Weber , Franz Hirler , Andreas Meiser , Anton Mauder , Kurt Sorschag , Stefan Gamerith , Roman Knoefler
发明人： Hans Weber , Franz Hirler , Andreas Meiser , Anton Mauder , Kurt Sorschag , Stefan Gamerith , Roman Knoefler
IPC分类号： H01L21/336 , H01L21/20
CPC分类号： H01L29/7802 , H01L21/823437 , H01L21/823481 , H01L21/823487 , H01L27/0629 , H01L29/0653 , H01L29/407 , H01L29/66734 , H01L29/7828
摘要： A semiconductor device with a dielectric layer is produced by providing a semiconductor body with a first trench extending into the semiconductor body, the first trench having a bottom and a sidewall. A first dielectric layer is formed on the sidewall in a lower portion of the first trench and a first plug is formed in the lower portion of the first trench so as to cover the first dielectric layer. The first plug leaves an upper portion of the sidewall uncovered. A sacrificial layer is formed on the sidewall in the upper portion of the first trench and a second plug is formed in the upper portion of the first trench. The sacrificial layer is removed so as to form a second trench having sidewalls and a bottom. A second dielectric layer is formed in the second trench and extends to the first dielectric layer.
摘要翻译：具有电介质层的半导体器件通过向半导体本体提供延伸到半导体本体中的第一沟槽，第一沟槽具有底部和侧壁来制造。第一电介质层形成在第一沟槽的下部的侧壁上，第一插塞形成在第一沟槽的下部，以覆盖第一电介质层。第一个塞子留下未覆盖的侧壁的上部。牺牲层形成在第一沟槽的上部的侧壁上，第二插塞形成在第一沟槽的上部。除去牺牲层以形成具有侧壁和底部的第二沟槽。第二介电层形成在第二沟槽中并延伸到第一介电层。

8. 发明申请

US20120083085A1 METHOD FOR PRODUCING AN ELECTRODE STRUCTURE 有权
标题翻译：生产电极结构的方法
公开(公告)号：US20120083085A1
公开(公告)日：2012-04-05
申请号：US13240308
申请日：2011-09-22
申请人： Hans Weber , Stefan Gamerith , Roman Knoefler , Kurt Sorschag , Anton Mauder
发明人： Hans Weber , Stefan Gamerith , Roman Knoefler , Kurt Sorschag , Anton Mauder
IPC分类号： H01L21/336
CPC分类号： H01L29/7813 , H01L29/0653 , H01L29/1095 , H01L29/407 , H01L29/4236 , H01L29/4238 , H01L29/66734 , H01L29/7803
摘要： A method for producing a semiconductor device with an electrode structure includes providing a semiconductor body with a first surface, and with a first sacrificial layer extending in a vertical direction of the semiconductor body from the first surface, and forming a first trench extending from the first surface into the semiconductor body. The first trench is formed at least by removing the sacrificial layer in a section adjacent to the first surface. The method further includes forming a second trench by isotropically etching the semiconductor body in the first trench, forming a dielectric layer which covers sidewalls of the second trench, and forming an electrode on the dielectric layer in the second trench, the electrode and the dielectric layer in the second trench forming the electrode structure.
摘要翻译：一种用于制造具有电极结构的半导体器件的方法，包括：提供具有第一表面的半导体本体，以及从所述第一表面沿着所述半导体本体的垂直方向延伸的第一牺牲层，以及形成从所述第一表面延伸的第一沟槽表面进入半导体体。至少通过在与第一表面相邻的部分中去除牺牲层来形成第一沟槽。该方法还包括通过在第一沟槽中各向同性蚀刻半导体本体来形成第二沟槽，形成覆盖第二沟槽侧壁的电介质层，以及在第二沟槽，电极和电介质层中的电介质层上形成电极在形成电极结构的第二沟槽中。

9. 发明申请

US20110309441A1 INTEGRATED SEMICONDUCTOR DEVICE HAVING AN INSULATING STRUCTURE AND A MANUFACTURING METHOD 有权
标题翻译：具有绝缘结构的集成半导体器件和制造方法
公开(公告)号：US20110309441A1
公开(公告)日：2011-12-22
申请号：US12819856
申请日：2010-06-21
申请人： Matthias Stecher , Hans Weber , Lincoln O'Riain , Birgit von Ehrenwall
发明人： Matthias Stecher , Hans Weber , Lincoln O'Riain , Birgit von Ehrenwall
IPC分类号： H01L27/092 , H01L29/06 , H01L21/76
CPC分类号： H01L27/1207 , H01L21/187 , H01L21/743 , H01L21/76283 , H01L27/0251 , H01L27/1203 , H01L29/04 , H01L29/0878 , H01L29/1087 , H01L29/66681 , H01L29/7816
摘要： An integrated semiconductor device is provided. The integrated semiconductor device has a first semiconductor region of a second conductivity type, a second semiconductor region of a first conductivity type forming a pn-junction with the first semiconductor region, a non-monocrystalline semiconductor layer of the first conductivity type arranged on the second semiconductor region, a first well and at least one second well of the first conductivity type arranged on the non-monocrystalline semiconductor layer and an insulating structure insulating the first well from the at least one second well and the non-monocrystalline semiconductor layer. Further, a method for forming a semiconductor device is provided.
摘要翻译：提供集成半导体器件。集成半导体器件具有第二导电类型的第一半导体区域，与第一半导体区域形成pn结的第一导电类型的第二半导体区域，布置在第二导电类型的第二导电类型的非单晶半导体层半导体区域，布置在非单晶半导体层上的第一导电类型的第一阱和至少一个第二阱以及使第一阱与至少一个第二阱和非单晶半导体层绝缘的绝缘结构。此外，提供了一种用于形成半导体器件的方法。

10. 发明申请

US20110241678A1 Method for homogenizing resolution in magnet resonance tomography measurements using non-linear encoding fields 有权
标题翻译：使用非线性编码区域在磁共振断层摄影测量中使分辨率均匀化的方法
公开(公告)号：US20110241678A1
公开(公告)日：2011-10-06
申请号：US13064277
申请日：2011-03-16
申请人： Hans Weber , Maxim Zaitsev , Daniel Gallichan , Gerrit Schultz
发明人： Hans Weber , Maxim Zaitsev , Daniel Gallichan , Gerrit Schultz
IPC分类号： G01R33/48
CPC分类号： G01R33/4833
摘要： A method for magnetic resonance (=MR) imaging, wherein non-linear gradient fields are applied for the purpose of spatial encoding to acquire images of an object to be imaged and wherein the magnet resonance signal radiated from the object to be imaged is sampled on grids in time, to thereby obtain sampling points, is characterized in that the object to be imaged is mapped completely in regions of stronger gradient fields by increasing the density of the sampling points in the center of k-space, and additional sampling points are specifically acquired in the outer regions of k-space according to a k-space sampling pattern depending on the desired distribution of the resolution in the measurement, wherein the MR measurement is calculated with the additional sampling points. An MR imaging method is thereby provided by means of which homogenized resolution is achieved in the MR measurements using non-linear gradient fields for spatial encoding.
摘要翻译：一种用于磁共振（= MR）成像的方法，其中应用非线性梯度场用于空间编码以获取待成像对象的图像，并且其中从待成像对象辐射的磁共振信号被采样在时间上的网格，从而获得采样点，其特征在于通过增加k空间中心的采样点的密度，将要成像的对象完全映射在更强的梯度场的区域中，并且附加的采样点是具体的根据k-空间采样模式在k空间的外部区域中取决于测量中的分辨率的期望分布，其中用附加采样点计算MR测量值。由此提供MR成像方法，通过这种方法，使用非线性梯度场用于空间编码的MR测量中实现了均匀分辨率。

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