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    • 4. 发明授权
    • Solar cell
    • 太阳能电池
    • US08802974B2
    • 2014-08-12
    • US12565849
    • 2009-09-24
    • Yasutaka NishidaMichihiko InabaShinya SakuradaSatoshi Itoh
    • Yasutaka NishidaMichihiko InabaShinya SakuradaSatoshi Itoh
    • H01L31/032
    • H01L31/0321H01L31/0296H01L31/0322H01L31/0323H01L31/072H01L31/073Y02E10/541Y02E10/543
    • A solar cell includes a p-n junction formed by joining a p-type semiconductor and an n-type semiconductor. The p-type semiconductor is a chalcopyrite compound semiconductor with a band gap of 1.5 eV or more within which an intermediate level exists with a half bandwidth of 0.05 eV or more. The intermediate level is different from an impurity level. The chalcopyrite compound semiconductor includes a first element having first electronegativity of 1.9 or more in Pauling units, the first element occupying a lattice site of the semiconductor. A portion of the first element is substituted with a second element having second electronegativity different from the first electronegativity, the second element being a congeneric element of the first element. The intermediate level is created by substituting the first element with the second element.
    • 太阳能电池包括通过连接p型半导体和n型半导体形成的p-n结。 p型半导体是具有1.5eV以上的带隙的黄铜矿化合物半导体,其中存在中等水平,半带宽为0.05eV以上。 中间水平与杂质水平不同。 黄铜矿化合物半导体包括在保罗单元中具有1.9或更高的第一电负性的第一元素,第一元素占据半导体的晶格位置。 第一元件的一部分被具有不同于第一电负性的第二电负性的第二元件取代,第二元素是第一元素的同源元件。 中间级别是通过用第二个元素代替第一个元素来创建的。
    • 9. 发明申请
    • SOLAR CELL
    • 太阳能电池
    • US20100078072A1
    • 2010-04-01
    • US12565849
    • 2009-09-24
    • Yasutaka NishidaMichihiko InabaShinya SakuradaSatoshi Itoh
    • Yasutaka NishidaMichihiko InabaShinya SakuradaSatoshi Itoh
    • H01L31/00
    • H01L31/0321H01L31/0296H01L31/0322H01L31/0323H01L31/072H01L31/073Y02E10/541Y02E10/543
    • A solar cell includes a p-n junction formed by joining a p-type semiconductor and an n-type semiconductor. The p-type semiconductor is a chalcopyrite compound semiconductor with a band gap of 1.5 eV or more within which an intermediate level exists with a half bandwidth of 0.05 eV or more. The intermediate level is different from an impurity level. The chalcopyrite compound semiconductor includes a first element having first electronegativity of 1.9 or more in Pauling units, the first element occupying a lattice site of the semiconductor. A portion of the first element is substituted with a second element having second electronegativity different from the first electronegativity, the second element being a congeneric element of the first element. The intermediate level is created by substituting the first element with the second element.
    • 太阳能电池包括通过连接p型半导体和n型半导体形成的p-n结。 p型半导体是具有1.5eV以上的带隙的黄铜矿化合物半导体,其中存在中等水平,半带宽为0.05eV以上。 中间水平与杂质水平不同。 黄铜矿化合物半导体包括在保罗单元中具有1.9或更高的第一电负性的第一元素,第一元素占据半导体的晶格位置。 第一元件的一部分被具有不同于第一电负性的第二电负性的第二元件取代,第二元素是第一元素的同源元件。 中间级别是通过用第二个元素代替第一个元素来创建的。