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    • 7. 发明申请
    • THERMOPILE INFRARED SENSOR STRUCTURE WITH A HIGH FILLING LEVEL
    • 具有高填充水平的热像红外传感器结构
    • US20160025571A1
    • 2016-01-28
    • US14379007
    • 2013-01-18
    • Heimann Sensor GmbH
    • Frank HerrmannMarion SimonWilhelm LenekeBodo ForgKarlheinz StorckMichael MuellerJoerg Schieferdecker
    • G01J5/12G01J5/08G01J5/06G01J5/02
    • G01J5/12G01J5/023G01J5/06G01J5/0815G01J5/0853
    • Thermopile infrared sensor structure with a high filling level in a housing filled with a medium (15), consisting of a carrier substrate (11) which has electrical connections (28, 28′) to the outside and is closed with an optical assembly (13), wherein a sensor chip (14) is applied to the carrier substrate (11) in the housing, which chip has a plurality of thermoelectric sensor element structures (16), the so-called “hot contacts” (10) of which are located on individual diaphragms (3) which are stretched across a respective cavity (9) in a silicon carrying body (24) with good thermal conductivity, wherein the “cold contacts” (25) are located on or in the vicinity of the silicon carrying body (24). The problem addressed by the invention is that of specifying a thermopile infrared array sensor (sensor cell) which, with a small chip size, has a high thermal resolution and a particularly high filling level. This sensor is preferably intended to be operated in gas with a normal pressure or a reduced pressure and is intended to be able to be mass-produced in a cost-effective manner under ultra-high vacuum without complicated technologies for closing the housing. This is achieved by virtue of the fact that a radiation collector structure (17) is located above each individual diaphragm (3) of the sensor element structures (16) which spans a cavity (9).
    • 在填充有介质(15)的壳体中具有高填充水平的热电堆红外传感器结构,由具有到外部的电连接(28,28')并且用光学组件(13)封闭的载体基板(11) ),其中传感器芯片(14)被施加到壳体中的载体基板(11)上,该芯片具有多个热电传感器元件结构(16),所谓的“热触点”(10) 位于在具有良好导热性的硅载体(24)中穿过相应空腔(9)的单个膜片(3)上,其中“冷触点”(25)位于硅载体上或其附近 身体(24)。 本发明解决的问题是指定热电堆红外阵列传感器(传感器单元),其具有小的芯片尺寸,具有高热分辨率和特别高的填充水平。 该传感器优选用于在正常压力或减压下的气体中操作,并且旨在能够在超高真空下以成本有效的方式批量生产,而不需要用于关闭壳体的复杂技术。 这通过以下事实来实现:辐射收集器结构(17)位于跨越空腔(9)的传感器元件结构(16)的每个单独隔膜(3)上方。