专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20080137405A1 Current Injection Magnetic Domain Wall Moving Element 有权
标题翻译：电流注入磁畴壁移动元件
公开(公告)号：US20080137405A1
公开(公告)日：2008-06-12
申请号：US10585638
申请日：2005-01-14
申请人： Hideo Ohno , Fumihiro Matsukura , Daichi Chiba , Michihiko Yamanouchi
发明人： Hideo Ohno , Fumihiro Matsukura , Daichi Chiba , Michihiko Yamanouchi
IPC分类号： G11C11/15
CPC分类号： H01L43/08 , G11C11/14 , G11C19/0808 , G11C19/0841
摘要： The present invention provides a current injection-type magnetic domain wall-motion device which requires no external magnetic field for reversing the magnetization direction of a ferromagnetic body and which has low power consumption. The current injection-type magnetic domain wall-motion device includes a microjunction structure including two magnetic bodies (a first magnetic body 1 and a second magnetic body 2) having magnetization directions antiparallel to each other and a third magnetic body 3 sandwiched therebetween. The magnetization direction of the device is controlled in such a manner that a pulse current (a current density of 104-107 A/cm2) is applied across junction interfaces present in the microjunction structure such that a magnetic domain wall is moved by the interaction between the magnetic domain wall and the current in the same direction as that of the current or in the direction opposite to that of the current.
摘要翻译：本发明提供一种电流注入型磁畴壁运动装置，其不需要用于反转铁磁体的磁化方向的外部磁场并且具有低功耗。电流注入型磁畴壁运动装置包括具有彼此反平行的磁化方向的两个磁体（第一磁体1和第二磁体2）和夹在其间的第三磁体3的微结构结构。以这样的方式控制器件的磁化方向：使脉冲电流（电流密度为10×10 -7 / A 2 / cm 2 / >）施加在微结结构中存在的结界面上，使得磁畴壁通过磁畴壁与电流在与电流或电流相反的方向相同的方向上的相互作用而移动。

2. 发明授权

US08331140B2 Current injection magnetic domain wall moving element 有权
标题翻译：电流注入磁畴壁移动元件
公开(公告)号：US08331140B2
公开(公告)日：2012-12-11
申请号：US10585638
申请日：2005-01-14
申请人： Hideo Ohno , Fumihiro Matsukura , Daichi Chiba , Michihiko Yamanouchi
发明人： Hideo Ohno , Fumihiro Matsukura , Daichi Chiba , Michihiko Yamanouchi
IPC分类号： G11C11/15
CPC分类号： H01L43/08 , G11C11/14 , G11C19/0808 , G11C19/0841
摘要： The present invention provides a current injection-type magnetic domain wall-motion device which requires no external magnetic field for reversing the magnetization direction of a ferromagnetic body and which has low power consumption. The current injection-type magnetic domain wall-motion device includes a microjunction structure including two magnetic bodies (a first magnetic body 1 and a second magnetic body 2) having magnetization directions antiparallel to each other and a third magnetic body 3 sandwiched therebetween. The magnetization direction of the device is controlled in such a manner that a pulse current (a current density of 104-107 A/cm2) is applied across junction interfaces present in the microjunction structure such that a magnetic domain wall is moved by the interaction between the magnetic domain wall and the current in the same direction as that of the current or in the direction opposite to that of the current.
摘要翻译：本发明提供一种电流注入型磁畴壁运动装置，其不需要用于反转铁磁体的磁化方向的外部磁场并且具有低功耗。电流注入型磁畴壁运动装置包括具有彼此反平行的磁化方向的两个磁体（第一磁体1和第二磁体2）和夹在其间的第三磁体3的微结构结构。以这样的方式控制器件的磁化方向，使脉冲电流（电流密度为104-107A / cm2）施加在微结结构中存在的结界面上，使得磁畴壁通过磁畴壁和电流与电流方向相同或与电流方向相反。

3. 发明授权

US08310867B2 Nonvolatile solid state magnetic memory and recording method thereof 有权
标题翻译：非易失性固态磁存储器及其记录方法
公开(公告)号：US08310867B2
公开(公告)日：2012-11-13
申请号：US12682044
申请日：2008-10-03
申请人： Hideo Ohno , Fumihiro Matsukura , Daichi Chiba
发明人： Hideo Ohno , Fumihiro Matsukura , Daichi Chiba
IPC分类号： G11C11/14 , G11C11/15 , G11C11/00
CPC分类号： H01L43/08 , G11C11/161 , H01L43/10
摘要： A nonvolatile solid state magnetic memory with a ultra-low power consumption and a recording method thereof, the memory including a magnetic material having a magnetic anisotropy that can be changed by increasing or decreasing a carrier concentration, wherein a direction of an easy axis of magnetization, in which the magnetization is oriented easily, is controlled by increasing or decreasing the carrier concentration. The nonvolatile solid state magnetic memory including a recording layer of a magnetic material, and a recording method thereof, in which a carrier (electron or hole) concentration in the recording layer is increased and/or decreased, whereby the magnetization is rotated or reversed and the recording operation is performed.
摘要翻译：一种具有超低功耗的非易失性固态磁存储器及其记录方法，所述存储器包括具有可通过增加或减少载流子浓度而改变的磁各向异性的磁性材料，其中易磁化轴的方向通过增加或减少载流子浓度来控制磁化取向容易。包括磁性材料的记录层的非挥发性固态磁存储器及其记录方法，其中记录层中的载流子（电子或空穴）浓度增加和/或减少，由此磁化被旋转或反转，执行记录操作。

4. 发明申请

US20100246252A1 NONVOLATILE SOLID STATE MAGNETIC MEMORY AND RECORDING METHOD THEREOF 有权
标题翻译：非易失性固态磁记忆及其记录方法
公开(公告)号：US20100246252A1
公开(公告)日：2010-09-30
申请号：US12682044
申请日：2008-10-03
申请人： Hideo Ohno , Fumihiro Matsukura , Daichi Chiba
发明人： Hideo Ohno , Fumihiro Matsukura , Daichi Chiba
IPC分类号： G11C11/14 , H01L29/82
CPC分类号： H01L43/08 , G11C11/161 , H01L43/10
摘要： A nonvolatile solid state magnetic memory with a ultra-low power consumption and a recording method thereof, the memory including a magnetic material having a magnetic anisotropy that can be changed by increasing or decreasing a carrier concentration, wherein a direction of an easy axis of magnetization, in which the magnetization is oriented easily, is controlled by increasing or decreasing the carrier concentration. The nonvolatile solid state magnetic memory including a recording layer of a magnetic material, and a recording method thereof, in which a carrier (electron or hole) concentration in the recording layer is increased and/or decreased, whereby the magnetization is rotated or reversed and the recording operation is performed.
摘要翻译：一种具有超低功耗的非易失性固态磁存储器及其记录方法，所述存储器包括具有可通过增加或减少载流子浓度而改变的磁各向异性的磁性材料，其中易磁化轴的方向通过增加或减少载流子浓度来控制磁化取向容易。包括磁性材料的记录层的非挥发性固态磁存储器及其记录方法，其中记录层中的载流子（电子或空穴）浓度增加和/或减少，由此磁化被旋转或反转，执行记录操作。

5. 发明授权

US09105831B2 Nonvolatile magnetic element and nonvolatile magnetic device 有权
标题翻译：非易失磁性元件和非易失磁性元件
公开(公告)号：US09105831B2
公开(公告)日：2015-08-11
申请号：US14234547
申请日：2012-06-13
申请人： Shunsuke Fukami , Daichi Chiba
发明人： Shunsuke Fukami , Daichi Chiba
IPC分类号： H01L29/82 , H01L43/02 , H01L43/08 , H01L27/22 , G11C11/16
CPC分类号： H01L43/02 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L29/82 , H01L43/08
摘要： Provided is a nonvolatile magnetic device that is capable of realizing low power consumption by performing writing with a voltage and is also excellent in retention characteristics. The nonvolatile magnetic device includes a nonvolatile magnetic element. The nonvolatile magnetic element includes: a first free layer made of a ferromagnetic substance; a first insulating layer made of an insulator, the first insulating layer being provided to be connected to the first free layer; a charged layer provided adjacent to the first insulating layer; a second insulating layer made of an insulator, the second insulating layer being provided adjacent to the charged layer; and an injection layer provided adjacent to the second insulating layer. The charged layer is smaller in electric resistivity than both of the first insulating layer and the second insulating layer. The injection layer is smaller in electric resistivity than the second insulating layer.
摘要翻译：提供一种能够通过进行电压写入而实现低功耗并且保持特性也优异的非易失性磁性装置。非易失性磁性器件包括非易失性磁性元件。非挥发性磁性元件包括：由铁磁性物质制成的第一自由层; 由绝缘体制成的第一绝缘层，所述第一绝缘层设置成连接到所述第一自由层; 设置在所述第一绝缘层附近的带电层; 由绝缘体制成的第二绝缘层，所述第二绝缘层邻近所述带电层设置; 以及与第二绝缘层相邻设置的注入层。带电层的电阻率比第一绝缘层和第二绝缘层都要小。注入层的电阻率比第二绝缘层小。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式