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1. 发明授权

US09799822B2 Magnetic memory element and magnetic memory 有权
公开(公告)号：US09799822B2
公开(公告)日：2017-10-24
申请号：US14118093
申请日：2012-04-19
申请人： Shunsuke Fukami , Nobuyuki Ishiwata , Tadahiko Sugibayashi , Hideo Ohno , Shoji Ikeda , Michihiko Yamanouchi
发明人： Shunsuke Fukami , Nobuyuki Ishiwata , Tadahiko Sugibayashi , Hideo Ohno , Shoji Ikeda , Michihiko Yamanouchi
IPC分类号： H01L29/82 , H01L43/02 , H01L27/22 , G11C11/16 , H01L43/08
CPC分类号： H01L43/02 , G11C11/161 , H01L27/228 , H01L43/08
摘要： A disclosed magnetic memory element includes: a magnetization free layer formed of a ferromagnetic substance having perpendicular magnetic anisotropy; a response layer provided so as to be opposed to the magnetization free layer and formed of a ferromagnetic substance having perpendicular magnetic anisotropy; a non-magnetic layer provided so as to be opposed to the response layer on a side opposite to the magnetization free layer and formed of a non-magnetic substance; and a reference layer provided so as to be opposed to the non-magnetic layer on a side opposite to the response layer and formed of a ferromagnetic substance having perpendicular magnetic anisotropy. The magnetization free layer includes a first magnetization fixed region and a second magnetization fixed region which have magnetization fixed in directions antiparallel to each other, and a magnetization free region in which a magnetization direction is variable.

2. 发明申请

US20120300543A1 MAGNETIC TUNNEL JUNCTIONS WITH PERPENDICULAR MAGNETIZATION AND MAGNETIC RANDOM ACCESS MEMORY 有权
标题翻译：具有完全磁化和磁性随机存取存储器的磁性隧道结
公开(公告)号：US20120300543A1
公开(公告)日：2012-11-29
申请号：US13480303
申请日：2012-05-24
申请人： Hideo Ohno , Shoji Ikeda , Michihiko Yamanouchi , Hideo Sato , Katsuya Miura
发明人： Hideo Ohno , Shoji Ikeda , Michihiko Yamanouchi , Hideo Sato , Katsuya Miura
IPC分类号： G11C11/16
CPC分类号： G11C11/16 , G11C11/161 , H01F10/3254 , H01F10/3286 , H01L27/228 , H01L43/08 , Y10T428/1114
摘要： In magnetic tunnel junctions manufactured with use of a ferromagnetic material having perpendicular magnetic anisotropy, a difference in record retention time depending on stored information due to an imbalance in thermal stability between a parallel state and an anti-parallel state of magnetization, which correspond to bit information, is alleviated. A reference layer and a recording layer which constitute a magnetic tunnel junction are made different in area from each other so as to correct the difference in record retention time corresponding to stored information.
摘要翻译：在使用具有垂直磁各向异性的铁磁材料制造的磁性隧道结中，根据存储的信息，由于平行状态和反平行磁化状态之间的热稳定性不平衡而导致的记录保留时间的差异，其对应于位信息得到缓解。构成磁性隧道结的参考层和记录层的面积彼此不同，以便校正与存储的信息相对应的记录保留时间的差异。

3. 发明申请

US20080137405A1 Current Injection Magnetic Domain Wall Moving Element 有权
标题翻译：电流注入磁畴壁移动元件
公开(公告)号：US20080137405A1
公开(公告)日：2008-06-12
申请号：US10585638
申请日：2005-01-14
申请人： Hideo Ohno , Fumihiro Matsukura , Daichi Chiba , Michihiko Yamanouchi
发明人： Hideo Ohno , Fumihiro Matsukura , Daichi Chiba , Michihiko Yamanouchi
IPC分类号： G11C11/15
CPC分类号： H01L43/08 , G11C11/14 , G11C19/0808 , G11C19/0841
摘要： The present invention provides a current injection-type magnetic domain wall-motion device which requires no external magnetic field for reversing the magnetization direction of a ferromagnetic body and which has low power consumption. The current injection-type magnetic domain wall-motion device includes a microjunction structure including two magnetic bodies (a first magnetic body 1 and a second magnetic body 2) having magnetization directions antiparallel to each other and a third magnetic body 3 sandwiched therebetween. The magnetization direction of the device is controlled in such a manner that a pulse current (a current density of 104-107 A/cm2) is applied across junction interfaces present in the microjunction structure such that a magnetic domain wall is moved by the interaction between the magnetic domain wall and the current in the same direction as that of the current or in the direction opposite to that of the current.
摘要翻译：本发明提供一种电流注入型磁畴壁运动装置，其不需要用于反转铁磁体的磁化方向的外部磁场并且具有低功耗。电流注入型磁畴壁运动装置包括具有彼此反平行的磁化方向的两个磁体（第一磁体1和第二磁体2）和夹在其间的第三磁体3的微结构结构。以这样的方式控制器件的磁化方向：使脉冲电流（电流密度为10×10 -7 / A 2 / cm 2 / >）施加在微结结构中存在的结界面上，使得磁畴壁通过磁畴壁与电流在与电流或电流相反的方向相同的方向上的相互作用而移动。

4. 发明授权

US09070457B2 Magnetic tunnel junctions with perpendicular magnetization and magnetic random access memory 有权
标题翻译：具有垂直磁化和磁性随机存取存储器的磁隧道结
公开(公告)号：US09070457B2
公开(公告)日：2015-06-30
申请号：US13480303
申请日：2012-05-24
申请人： Hideo Ohno , Shoji Ikeda , Michihiko Yamanouchi , Hideo Sato , Katsuya Miura
发明人： Hideo Ohno , Shoji Ikeda , Michihiko Yamanouchi , Hideo Sato , Katsuya Miura
IPC分类号： G11C11/00 , G11C11/16 , H01L43/08 , H01F10/32 , H01L27/22
CPC分类号： G11C11/16 , G11C11/161 , H01F10/3254 , H01F10/3286 , H01L27/228 , H01L43/08 , Y10T428/1114
摘要： In magnetic tunnel junctions manufactured with use of a ferromagnetic material having perpendicular magnetic anisotropy, a difference in record retention time depending on stored information due to an imbalance in thermal stability between a parallel state and an anti-parallel state of magnetization, which correspond to bit information, is alleviated. A reference layer and a recording layer which constitute a magnetic tunnel junction are made different in area from each other so as to correct the difference in record retention time corresponding to stored information.
摘要翻译：在使用具有垂直磁各向异性的铁磁材料制造的磁性隧道结中，根据存储的信息，由于平行状态和反平行磁化状态之间的热稳定性不平衡而导致的记录保留时间的差异，其对应于位信息得到缓解。构成磁性隧道结的参考层和记录层的面积彼此不同，以便校正与存储的信息相对应的记录保留时间的差异。

5. 发明授权

US08331140B2 Current injection magnetic domain wall moving element 有权
标题翻译：电流注入磁畴壁移动元件
公开(公告)号：US08331140B2
公开(公告)日：2012-12-11
申请号：US10585638
申请日：2005-01-14
申请人： Hideo Ohno , Fumihiro Matsukura , Daichi Chiba , Michihiko Yamanouchi
发明人： Hideo Ohno , Fumihiro Matsukura , Daichi Chiba , Michihiko Yamanouchi
IPC分类号： G11C11/15
CPC分类号： H01L43/08 , G11C11/14 , G11C19/0808 , G11C19/0841
摘要： The present invention provides a current injection-type magnetic domain wall-motion device which requires no external magnetic field for reversing the magnetization direction of a ferromagnetic body and which has low power consumption. The current injection-type magnetic domain wall-motion device includes a microjunction structure including two magnetic bodies (a first magnetic body 1 and a second magnetic body 2) having magnetization directions antiparallel to each other and a third magnetic body 3 sandwiched therebetween. The magnetization direction of the device is controlled in such a manner that a pulse current (a current density of 104-107 A/cm2) is applied across junction interfaces present in the microjunction structure such that a magnetic domain wall is moved by the interaction between the magnetic domain wall and the current in the same direction as that of the current or in the direction opposite to that of the current.
摘要翻译：本发明提供一种电流注入型磁畴壁运动装置，其不需要用于反转铁磁体的磁化方向的外部磁场并且具有低功耗。电流注入型磁畴壁运动装置包括具有彼此反平行的磁化方向的两个磁体（第一磁体1和第二磁体2）和夹在其间的第三磁体3的微结构结构。以这样的方式控制器件的磁化方向，使脉冲电流（电流密度为104-107A / cm2）施加在微结结构中存在的结界面上，使得磁畴壁通过磁畴壁和电流与电流方向相同或与电流方向相反。

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