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    • 1. 发明授权
    • Cartridge misinsertion preventing mechanism and magnetic tape library device cell
    • 墨盒错误插入防止机构和磁带库设备单元
    • US08369042B2
    • 2013-02-05
    • US13367962
    • 2012-02-07
    • Hiroaki Ishii
    • Hiroaki Ishii
    • G11B5/008
    • G11B15/6885Y10T403/598
    • Provided are: a first entry preventing nail that interferes with a cartridge at a position closer to an insertion/extraction port than an insertion completed position of an insertion-side end face of the cartridge inserted first; a second entry preventing nail at a position with a space from the first entry preventing nail slightly longer than length of the cartridge, which allows entry of the cartridge and retreat of the first entry preventing nail at that position when a tapered face of the cartridge is at that position while preventing the entry of the cartridge and retreat of the first entry preventing nail at that position when the tapered face of the cartridge is not at that position; and a linkage module which allows advancing and retreating actions of the first and second entry preventing nails in a tradeoff relation.
    • 本发明提供的是:防止第一防甲钉在与插入/拔出端口相邻的位置处与插入件首先插入的盒的插入侧端面的插入完成位置相干扰; 第二入口防止钉在具有距第一入口防护钉的空间稍微长于盒的长度的位置的位置,这允许盒的入口和当第一入口防止钉退回到该位置时,当盒的锥形面为 在该位置处,当盒的锥形面不在该位置时,防止盒的入口和第一入口防止指甲的后退; 以及联动模块,其允许第一和第二入口防止指甲的前进和后退动作以权衡关系。
    • 3. 发明授权
    • Amplifying circuit
    • 放大电路
    • US07724089B2
    • 2010-05-25
    • US12274015
    • 2008-11-19
    • Kenichi MiyamotoHiroaki Ishii
    • Kenichi MiyamotoHiroaki Ishii
    • H03F3/45
    • H03F3/303G09G3/3685H03F2200/297
    • First and second voltage buffers are added to an amplifying circuit including input and output amplifying stages in which a P-MOS transistor and an N-MOS transistor operate as a push-pull circuit. An input of the first voltage buffer is connected to an output of the amplifying circuit, and an output of the first voltage buffer is connected via a first phase compensating capacitor to a gate electrode of the P-MOS transistor, and is connected via a second phase compensating capacitor to a gate electrode of the N-MOS transistor. An input of the second voltage buffer is connected to the output of the amplifying circuit, and an output of the second voltage buffer is connected via a third phase compensating capacitor to the gate electrode of the P-MOS transistor, and is connected via a fourth phase compensating capacitor to the gate electrode of the N-MOS transistor.
    • 将第一和第二电压缓冲器加到包括P-MOS晶体管和N-MOS晶体管作为推挽电路工作的输入和输出放大级的放大电路中。 第一电压缓冲器的输入端连接到放大电路的输出,第一电压缓冲器的输出经由第一相位补偿电容器连接到P-MOS晶体管的栅电极,并经由第二电压缓冲器 相位补偿电容器到N-MOS晶体管的栅电极。 第二电压缓冲器的输入端连接到放大电路的输出端,第二电压缓冲器的输出经由第三相位补偿电容器连接到P-MOS晶体管的栅电极,并通过第四电压缓冲器 N相MOS晶体管的栅电极相位补偿电容。
    • 7. 发明授权
    • Image processing apparatus
    • 图像处理装置
    • US4870499A
    • 1989-09-26
    • US237614
    • 1988-08-24
    • Yoshiyuki SuzukiHiroaki Ishii
    • Yoshiyuki SuzukiHiroaki Ishii
    • H04N1/405H04N1/409
    • H04N1/4092H04N1/4056
    • In an image processing apparatus, an image signal generator includes a ROM and a D/A converter. The ROM consists of gain conversion tables. A PWM signal generator includes a frequency divider, a flip-flop, an integrator, a voltage divider, and a comparator. The frequency divider is synchronized with the ROM in response to a sync selection signal. An output from the frequency divider is further frequency-divided by the flip-flop and then converted into a triangular wave signal by the integrator. The bias component of the triangular wave signal is adjusted by the voltage divider. The resultant signal supplied to one input terminal of the comparator is compared thereby with an output from the D/A converter, thereby obtaining a PWM signal. The peak and bottom values of the triangular wave signal are always matched with the maximum and minimum values of the output from the D/A converter.
    • 在图像处理装置中,图像信号发生器包括ROM和D / A转换器。 ROM由增益转换表组成。 PWM信号发生器包括分频器,触发器,积分器,分压器和比较器。 响应于同步选择信号,分频器与ROM同步。 来自分频器的输出由触发器进一步分频,然后由积分器转换为三角波信号。 三角波信号的偏置分量由分压器调节。 提供给比较器的一个输入端的合成信号与D / A转换器的输出进行比较,从而获得PWM信号。 三角波信号的峰值和最小值始终与D / A转换器的输出的最大值和最小值匹配。
    • 9. 发明申请
    • Non-halogen series floor material
    • 非卤素系列地板材料
    • US20050095412A1
    • 2005-05-05
    • US10695450
    • 2003-10-29
    • Eiji SakaguchiMakoto KoyamaJunichi TakedaYoshiharu NishinoHiroaki Ishii
    • Eiji SakaguchiMakoto KoyamaJunichi TakedaYoshiharu NishinoHiroaki Ishii
    • B32B5/30B32B7/02E04F15/16B32B1/00B32B27/32
    • B32B27/20B32B5/30B32B7/02B32B25/10B32B27/32B32B2309/105B32B2323/10B32B2419/04E04F15/16Y10T428/2495Y10T428/24975Y10T428/26Y10T428/263Y10T428/266Y10T428/268Y10T428/269Y10T442/3886Y10T442/678Y10T442/699
    • A non-halogen series floor material includes a first intermediate resin layer containing filler of 100 to 400 mass parts with respect to resin ingredient of 100 mass parts, the resin ingredient consisting essentially of resin having no chlorine atom in chemical structure, a surface resin layer integrally formed at an upper surface side of the first intermediate resin layer, the surface resin layer containing resin having no chloride atom in chemical structure and having a thickness of 100 to 1,000 μm, a second intermediate resin layer integrally formed at a lower surface side of the first intermediate resin layer, the second intermediate resin layer containing resin having no chloride atom in chemical structure and filler of 0 to 200 mass parts with respect to resin ingredient of 100 mass parts, and a backing layer integrally formed at a lower surface side of the second intermediate resin layer, the backing layer being formed of a fibrous fabric constituted by fibers containing resin having no chloride atom in chemical structure. A content ratio of the filler in the second intermediate resin layer with respect to the resin ingredient thereof is smaller than a content ratio of the filler in the first intermediate resin layer with respect to the resin ingredient thereof. A thickness of the second intermediate resin layer is 100 μm or more. A thickness of the second intermediate resin layer is 50% or less of a total thickness of three resin layers.
    • 非卤素系列地板材料包括相对于100质量份的树脂成分含有100〜400质量份的填料的第一中间树脂层,所述树脂成分基本上由化学结构中没有氯原子的树脂组成,表面树脂层 一体地形成在第一中间树脂层的上表面侧,表面树脂层含有化学结构中没有氯原子的树脂,其厚度为100-1000μm,在第一中间树脂层的下表面一体形成的第二中间树脂层 第一中间树脂层,含有化学结构中不含氯原子的树脂的第二中间树脂层和相对于100质量份的树脂成分为0〜200质量份的填料,以及在第一中间树脂层的下表面侧一体形成的背衬层 第二中间树脂层,背衬层由由含树脂的纤维构成的纤维织物形成 化学结构中没有氯原子。 第二中间树脂层中的填料相对于树脂成分的含有率小于第一中间树脂层中的填料相对于树脂成分的含有比例。 第二中间树脂层的厚度为100μm以上。 第二中间树脂层的厚度为三层树脂层的总厚度的50%以下。